CN104120408B - 一种改进衬底气流方向的hvpe反应器 - Google Patents
一种改进衬底气流方向的hvpe反应器 Download PDFInfo
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- CN104120408B CN104120408B CN201410382372.5A CN201410382372A CN104120408B CN 104120408 B CN104120408 B CN 104120408B CN 201410382372 A CN201410382372 A CN 201410382372A CN 104120408 B CN104120408 B CN 104120408B
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- 239000000758 substrate Substances 0.000 title claims abstract description 66
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 42
- 239000010408 film Substances 0.000 description 9
- 239000003708 ampul Substances 0.000 description 8
- 239000010453 quartz Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000007787 solid Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003032 molecular docking Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Abstract
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CN201410382372.5A CN104120408B (zh) | 2014-08-06 | 2014-08-06 | 一种改进衬底气流方向的hvpe反应器 |
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CN201410382372.5A CN104120408B (zh) | 2014-08-06 | 2014-08-06 | 一种改进衬底气流方向的hvpe反应器 |
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CN104120408A CN104120408A (zh) | 2014-10-29 |
CN104120408B true CN104120408B (zh) | 2016-09-07 |
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Families Citing this family (2)
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CN105154969A (zh) * | 2015-10-19 | 2015-12-16 | 中国电子科技集团公司第四十六研究所 | 一种提高hvpe法生长氮化物均匀性的单晶炉腔体 |
CN114737170B (zh) * | 2022-04-15 | 2024-01-19 | 北京格安利斯气体管道工程技术有限公司 | 一种用于化学气相沉积的气体管道反应器、使用其制备的材料及用途 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101043001A (zh) * | 2006-03-20 | 2007-09-26 | 纽富来科技股份有限公司 | 气相生长方法及气相生长装置 |
CN101403108A (zh) * | 2008-08-04 | 2009-04-08 | 李刚 | 化学气相淀积反应器和化学气相淀积方法 |
CN101495675A (zh) * | 2005-02-23 | 2009-07-29 | 布里奇勒克斯股份有限公司 | 具有多个进口的化学气相沉积反应器 |
JP2012182183A (ja) * | 2011-02-28 | 2012-09-20 | Toyota Central R&D Labs Inc | 気相成長装置及び気相成長方法 |
CN204138764U (zh) * | 2014-08-06 | 2015-02-04 | 上海世山科技有限公司 | 改进衬底气流方向的hvpe反应器 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6134522B2 (ja) * | 2013-01-30 | 2017-05-24 | 株式会社ニューフレアテクノロジー | 気相成長装置および気相成長方法 |
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- 2014-08-06 CN CN201410382372.5A patent/CN104120408B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101495675A (zh) * | 2005-02-23 | 2009-07-29 | 布里奇勒克斯股份有限公司 | 具有多个进口的化学气相沉积反应器 |
CN101043001A (zh) * | 2006-03-20 | 2007-09-26 | 纽富来科技股份有限公司 | 气相生长方法及气相生长装置 |
CN101403108A (zh) * | 2008-08-04 | 2009-04-08 | 李刚 | 化学气相淀积反应器和化学气相淀积方法 |
JP2012182183A (ja) * | 2011-02-28 | 2012-09-20 | Toyota Central R&D Labs Inc | 気相成長装置及び気相成長方法 |
CN204138764U (zh) * | 2014-08-06 | 2015-02-04 | 上海世山科技有限公司 | 改进衬底气流方向的hvpe反应器 |
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Address after: 201108 Shanghai, Minhang District Spring Road, room 121-122, No. 56 Applicant after: SHANGHAI SHISHAN TECHNOLOGY CO., LTD. Applicant after: SHANGHAI ZHENGFAN TECHNOLOGY CO., LTD. Address before: 201108 Shanghai, Minhang District Spring Road, room 121-122, No. 56 Applicant before: SHANGHAI SHISHAN TECHNOLOGY CO., LTD. Applicant before: Shanghai Zhengfan Technology Co., Ltd. |
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Inventor after: Wang Zhigao Inventor after: Xu Zhen Inventor after: Jin Shinai Inventor after: Jin Dongzhi Inventor after: Li Dongsheng Inventor before: Xu Zhen Inventor before: Jin Shinai Inventor before: Jin Dongzhi |
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Effective date of registration: 20170109 Address after: 201108 Minhang District Spring Road, No. 56, Shanghai Patentee after: SHANGHAI ZHENGFAN TECHNOLOGY CO., LTD. Address before: 201108 Shanghai, Minhang District Spring Road, room 121-122, No. 56 Patentee before: SHANGHAI SHISHAN TECHNOLOGY CO., LTD. Patentee before: SHANGHAI ZHENGFAN TECHNOLOGY CO., LTD. |
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Effective date of registration: 20180416 Address after: No. 129 Xingtang Road, modern science and Technology Industrial Park, Jiangyan District, Taizhou, Jiangsu Co-patentee after: SHANGHAI ZHENGFAN TECHNOLOGY CO., LTD. Patentee after: Jiangsu ever sail Semiconductor Equipment Co., Ltd. Address before: No. 56 spring middle road, Minhang District, Shanghai Patentee before: SHANGHAI ZHENGFAN TECHNOLOGY CO., LTD. |