DE102004043264A1 - Magnet-Speichervorrichtungen mit wahlfreiem Zugriff, die wärmeerzeugende Schichten enthalten und darauf bezogene Verfahren - Google Patents

Magnet-Speichervorrichtungen mit wahlfreiem Zugriff, die wärmeerzeugende Schichten enthalten und darauf bezogene Verfahren Download PDF

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Publication number
DE102004043264A1
DE102004043264A1 DE102004043264A DE102004043264A DE102004043264A1 DE 102004043264 A1 DE102004043264 A1 DE 102004043264A1 DE 102004043264 A DE102004043264 A DE 102004043264A DE 102004043264 A DE102004043264 A DE 102004043264A DE 102004043264 A1 DE102004043264 A1 DE 102004043264A1
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Prior art keywords
electrically connected
heat generating
electrodes
series
memory device
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DE102004043264A
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DE102004043264B4 (de
Inventor
Won-Cheol Jeong
Hyeong-Jun Kim
Jae-Hyun Park
Chang-Wook Jeong
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)

Abstract

Eine Magnet-Speichervorrichtung mit wahlfreiem Zugriff enthält eine erste Elektrode auf einem Substrat, ein Magnet-Tunnel-Junction-Element, welches elektrisch mit der Elektrode verbunden ist, und eine zweite Elektrode, die elektrisch mit der ersten Elektrode über das Magnet-Tunnel-Junction-Element verbunden ist. Zusätzlich ist die wärmeerzeugende Schicht elektrisch zwischen der ersten und der zweiten Elektrode in Reihe geschaltet und die wärmeerzeugende Schicht bietet einen relativ hohen Widerstand in bezug auf einen elektrischen Stromfluß. Auch sind damit in Verbindung stehende Verfahren erläutert.
DE102004043264A 2003-09-29 2004-09-07 Magnet-Speichervorrichtungen mit wahlfreiem Zugriff, die wärmeerzeugende Schichten enthalten und darauf bezogene Verfahren zum Programmieren Active DE102004043264B4 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2003-0067530 2003-09-29
KR1020030067530A KR100568512B1 (ko) 2003-09-29 2003-09-29 열발생층을 갖는 자기열 램셀들 및 이를 구동시키는 방법들
US10/795,600 US7092283B2 (en) 2003-09-29 2004-03-08 Magnetic random access memory devices including heat generating layers and related methods
US10/795,600 2004-03-08

Publications (2)

Publication Number Publication Date
DE102004043264A1 true DE102004043264A1 (de) 2005-05-04
DE102004043264B4 DE102004043264B4 (de) 2012-04-05

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DE102004043264A Active DE102004043264B4 (de) 2003-09-29 2004-09-07 Magnet-Speichervorrichtungen mit wahlfreiem Zugriff, die wärmeerzeugende Schichten enthalten und darauf bezogene Verfahren zum Programmieren

Country Status (5)

Country Link
US (1) US7092283B2 (de)
JP (1) JP2005109470A (de)
KR (1) KR100568512B1 (de)
CN (1) CN100517500C (de)
DE (1) DE102004043264B4 (de)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6147395A (en) * 1996-10-02 2000-11-14 Micron Technology, Inc. Method for fabricating a small area of contact between electrodes
US6952364B2 (en) * 2003-03-03 2005-10-04 Samsung Electronics Co., Ltd. Magnetic tunnel junction structures and methods of fabrication
KR100615600B1 (ko) * 2004-08-09 2006-08-25 삼성전자주식회사 고집적 자기램 소자 및 그 제조방법
WO2005010998A1 (en) * 2003-06-24 2005-02-03 International Business Machines Corporation Self-aligned conductive lines for fet-based magnetic random access memory devices and method of forming the same
KR100615089B1 (ko) * 2004-07-14 2006-08-23 삼성전자주식회사 낮은 구동 전류를 갖는 자기 램
KR100568512B1 (ko) 2003-09-29 2006-04-07 삼성전자주식회사 열발생층을 갖는 자기열 램셀들 및 이를 구동시키는 방법들
US7369428B2 (en) 2003-09-29 2008-05-06 Samsung Electronics Co., Ltd. Methods of operating a magnetic random access memory device and related devices and structures
KR100835275B1 (ko) * 2004-08-12 2008-06-05 삼성전자주식회사 스핀 주입 메카니즘을 사용하여 자기램 소자를 구동시키는방법들
US7372722B2 (en) * 2003-09-29 2008-05-13 Samsung Electronics Co., Ltd. Methods of operating magnetic random access memory devices including heat-generating structures
KR100653708B1 (ko) * 2004-11-03 2006-12-04 삼성전자주식회사 발열체를 갖는 자기 램 소자의 구동 방법들
KR100660539B1 (ko) * 2004-07-29 2006-12-22 삼성전자주식회사 자기 기억 소자 및 그 형성 방법
US7929342B2 (en) 2005-08-15 2011-04-19 Nec Corporation Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory
JPWO2007119446A1 (ja) 2006-03-24 2009-08-27 日本電気株式会社 Ｍｒａｍ、及びｍｒａｍのデータ読み書き方法
US7457149B2 (en) * 2006-05-05 2008-11-25 Macronix International Co., Ltd. Methods and apparatus for thermally assisted programming of a magnetic memory device
JP2008130807A (ja) 2006-11-21 2008-06-05 Toshiba Corp 磁気ランダムアクセスメモリ及びその製造方法
KR100885184B1 (ko) 2007-01-30 2009-02-23 삼성전자주식회사 전기장 및 자기장에 의해 독립적으로 제어될 수 있는 저항특성을 갖는 메모리 장치 및 그 동작 방법
WO2008099626A1 (ja) * 2007-02-13 2008-08-21 Nec Corporation 磁気抵抗効果素子、および磁気ランダムアクセスメモリ
JP5277629B2 (ja) * 2007-12-21 2013-08-28 ソニー株式会社 磁気抵抗効果を有するメモリ素子及びその製造方法、並びに、不揮発性磁気メモリ装置
FR2929041B1 (fr) * 2008-03-18 2012-11-30 Crocus Technology Element magnetique a ecriture assistee thermiquement
ATE538474T1 (de) * 2008-04-07 2012-01-15 Crocus Technology Sa System und verfahren zum schreiben von daten auf magnetoresistive direktzugriffsspeicherzellen
US8125040B2 (en) * 2008-04-18 2012-02-28 Qualcomm Incorporated Two mask MTJ integration for STT MRAM
US9159910B2 (en) 2008-04-21 2015-10-13 Qualcomm Incorporated One-mask MTJ integration for STT MRAM
US8564079B2 (en) 2008-04-21 2013-10-22 Qualcomm Incorporated STT MRAM magnetic tunnel junction architecture and integration
EP2124228B1 (de) * 2008-05-20 2014-03-05 Crocus Technology Magnetischer Direktzugriffsspeicher mit einem elliptischen Tunnelübergang
KR100997288B1 (ko) 2008-07-07 2010-11-29 주식회사 하이닉스반도체 수직 자기형 비휘발성 메모리 장치 및 그 제조 방법
KR101004506B1 (ko) * 2008-09-09 2010-12-31 주식회사 하이닉스반도체 공통 소스라인을 갖는 수직 자기형 비휘발성 메모리 장치 및 그 제조 방법
US8102700B2 (en) * 2008-09-30 2012-01-24 Micron Technology, Inc. Unidirectional spin torque transfer magnetic memory cell structure
KR101532752B1 (ko) * 2009-01-21 2015-07-02 삼성전자주식회사 자기 메모리 소자
KR101623882B1 (ko) * 2009-04-29 2016-05-25 삼성전자주식회사 자기 메모리 소자
EP2479787B1 (de) 2009-09-17 2020-04-29 III Holdings 3, LLC Magnetoresistives element und nichtflüchtige halbleiterspeichervorrichtung damit
JP2012015312A (ja) 2010-06-30 2012-01-19 Sony Corp 磁気記憶素子及び磁気メモリ
US8476925B2 (en) * 2010-08-01 2013-07-02 Jian-Gang (Jimmy) Zhu Magnetic switching cells and methods of making and operating same
US8711612B1 (en) * 2010-12-03 2014-04-29 Magsil Corporation Memory circuit and method of forming the same using reduced mask steps
KR101222117B1 (ko) 2011-02-25 2013-01-14 에스케이하이닉스 주식회사 자기저항 메모리 소자 제조 방법
KR20130016827A (ko) * 2011-08-09 2013-02-19 에스케이하이닉스 주식회사 반도체 장치 및 그를 이용한 제조방법
US8313959B1 (en) * 2011-08-17 2012-11-20 Taiwan Semiconductor Manufacturing Company, Ltd. Hole first hardmask definition
KR101886382B1 (ko) * 2011-12-14 2018-08-09 삼성전자주식회사 정보 저장 소자 및 그 제조 방법
US8913422B2 (en) * 2012-09-28 2014-12-16 Intel Corporation Decreased switching current in spin-transfer torque memory
US20150069548A1 (en) * 2013-09-09 2015-03-12 Masahiko Nakayama Magnetoresistive element
KR102138820B1 (ko) 2014-01-08 2020-07-28 삼성전자주식회사 자기 기억 소자
US9459835B2 (en) * 2014-01-15 2016-10-04 HGST Netherlands B.V. Random number generator by superparamagnetism
WO2016139878A1 (ja) * 2015-03-05 2016-09-09 ソニー株式会社 記憶素子、記憶装置、磁気ヘッド、及び電子機器
JP6498968B2 (ja) 2015-03-11 2019-04-10 株式会社東芝 磁気抵抗素子および磁気メモリ
KR102449182B1 (ko) * 2015-10-15 2022-10-04 삼성전자주식회사 배선 형성 방법 및 이를 이용한 자기 기억 소자의 제조방법
JP6203312B2 (ja) * 2016-03-16 2017-09-27 株式会社東芝 磁気メモリ
KR102306333B1 (ko) * 2016-05-31 2021-09-30 소니그룹주식회사 불휘발성 메모리 셀, 메모리 셀 유닛 및 정보 기입 방법 및, 전자 기기
WO2018004612A1 (en) * 2016-06-30 2018-01-04 Intel Corporation Bulk-heating in pmtj stack design
US10522744B2 (en) 2017-10-10 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications
US11127788B2 (en) * 2018-10-31 2021-09-21 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device having magnetic tunnel junction (MTJ) stack
CN112234077B (zh) * 2019-07-15 2024-03-22 联华电子股份有限公司 磁性存储单元及其制作方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5946227A (en) * 1998-07-20 1999-08-31 Motorola, Inc. Magnetoresistive random access memory with shared word and digit lines
US6130814A (en) 1998-07-28 2000-10-10 International Business Machines Corporation Current-induced magnetic switching device and memory including the same
US6163477A (en) 1999-08-06 2000-12-19 Hewlett Packard Company MRAM device using magnetic field bias to improve reproducibility of memory cell switching
JP2001084758A (ja) 1999-09-17 2001-03-30 Fujitsu Ltd 強磁性トンネル接合ランダムアクセスメモリ、スピンバルブランダムアクセスメモリ、単一強磁性膜ランダムアクセスメモリ、およびこれらをつかったメモリセルアレイ
JP3593652B2 (ja) 2000-03-03 2004-11-24 富士通株式会社 磁気ランダムアクセスメモリ装置
US6385082B1 (en) 2000-11-08 2002-05-07 International Business Machines Corp. Thermally-assisted magnetic random access memory (MRAM)
US6724674B2 (en) * 2000-11-08 2004-04-20 International Business Machines Corporation Memory storage device with heating element
FR2817999B1 (fr) 2000-12-07 2003-01-10 Commissariat Energie Atomique Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif
KR100520175B1 (ko) 2000-12-12 2005-10-10 주식회사 하이닉스반도체 반도체소자의 제조방법
US6603678B2 (en) 2001-01-11 2003-08-05 Hewlett-Packard Development Company, L.P. Thermally-assisted switching of magnetic memory elements
JP2002208682A (ja) 2001-01-12 2002-07-26 Hitachi Ltd 磁気半導体記憶装置及びその製造方法
JP2002299584A (ja) * 2001-04-03 2002-10-11 Mitsubishi Electric Corp 磁気ランダムアクセスメモリ装置および半導体装置
JP4405103B2 (ja) 2001-04-20 2010-01-27 株式会社東芝 半導体記憶装置
JP2002334972A (ja) 2001-05-10 2002-11-22 Sony Corp 磁気メモリ装置
US6385083B1 (en) 2001-08-01 2002-05-07 Hewlett-Packard Company MRAM device including offset conductors
US6430085B1 (en) 2001-08-27 2002-08-06 Motorola, Inc. Magnetic random access memory having digit lines and bit lines with shape and induced anisotropy ferromagnetic cladding layer and method of manufacture
US6545906B1 (en) 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
JP2003151260A (ja) 2001-11-13 2003-05-23 Mitsubishi Electric Corp 薄膜磁性体記憶装置
US6720597B2 (en) 2001-11-13 2004-04-13 Motorola, Inc. Cladding of a conductive interconnect for programming a MRAM device using multiple magnetic layers
US6927072B2 (en) 2002-03-08 2005-08-09 Freescale Semiconductor, Inc. Method of applying cladding material on conductive lines of MRAM devices
US6704220B2 (en) * 2002-05-03 2004-03-09 Infineon Technologies Ag Layout for thermally selected cross-point MRAM cell
KR100829557B1 (ko) * 2002-06-22 2008-05-14 삼성전자주식회사 열자기 자발 홀 효과를 이용한 자기 램 및 이를 이용한데이터 기록 및 재생방법
KR20040003479A (ko) 2002-07-03 2004-01-13 삼성전자주식회사 자기 랜덤 액세스 메모리 디바이스의 셀 구조 및 그제조방법
JP4016101B2 (ja) 2002-08-22 2007-12-05 国立大学法人大阪大学 磁性メモリ、磁性メモリアレイ、磁性メモリの記録方法、及び磁性メモリの読み出し方法
US6791865B2 (en) * 2002-09-03 2004-09-14 Hewlett-Packard Development Company, L.P. Memory device capable of calibration and calibration methods therefor
US6744651B2 (en) * 2002-09-20 2004-06-01 Taiwan Semiconductor Manufacturing Company Local thermal enhancement of magnetic memory cell during programming
JP3866641B2 (ja) 2002-09-24 2007-01-10 株式会社東芝 磁気記憶装置およびその製造方法
KR100536592B1 (ko) 2002-11-01 2005-12-14 삼성전자주식회사 자기 메모리 및 그 제조 방법
JP2004164766A (ja) * 2002-11-14 2004-06-10 Renesas Technology Corp 不揮発性記憶装置
US6771534B2 (en) * 2002-11-15 2004-08-03 International Business Machines Corporation Thermally-assisted magnetic writing using an oxide layer and current-induced heating
AU2003276533A1 (en) 2002-11-28 2004-06-18 Koninklijke Philips Electronics N.V. Method and device for improved magnetic field generation during a write operation of a magnetoresistive memory device
KR100568512B1 (ko) 2003-09-29 2006-04-07 삼성전자주식회사 열발생층을 갖는 자기열 램셀들 및 이를 구동시키는 방법들

Also Published As

Publication number Publication date
DE102004043264B4 (de) 2012-04-05
KR20050031279A (ko) 2005-04-06
CN1655278A (zh) 2005-08-17
US20050078510A1 (en) 2005-04-14
JP2005109470A (ja) 2005-04-21
KR100568512B1 (ko) 2006-04-07
CN100517500C (zh) 2009-07-22
US7092283B2 (en) 2006-08-15

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