DE60312040D1 - Elektrische vorrichtung mit phasenwechselmaterial und parallelheizung - Google Patents

Elektrische vorrichtung mit phasenwechselmaterial und parallelheizung

Info

Publication number
DE60312040D1
DE60312040D1 DE60312040T DE60312040T DE60312040D1 DE 60312040 D1 DE60312040 D1 DE 60312040D1 DE 60312040 T DE60312040 T DE 60312040T DE 60312040 T DE60312040 T DE 60312040T DE 60312040 D1 DE60312040 D1 DE 60312040D1
Authority
DE
Germany
Prior art keywords
phase
electrical device
replacement material
parallel heating
phase replacement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60312040T
Other languages
English (en)
Other versions
DE60312040T2 (de
Inventor
Martijn H R Lankhorst
Erwin R Meinders
Robertus A M Wolters
Franciscus P Widdershoven
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE60312040D1 publication Critical patent/DE60312040D1/de
Publication of DE60312040T2 publication Critical patent/DE60312040T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H10N70/068—Patterning of the switching material by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa or cup type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/861—Thermal details
    • H10N70/8613—Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Other compounds of groups 13-15, e.g. elemental or compound semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/90—Bulk effect device making
DE60312040T 2002-12-19 2003-12-05 Elektrische vorrichtung mit phasenwechselmaterial und parallelheizung Expired - Lifetime DE60312040T2 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
EP02080430 2002-12-19
EP02080430 2002-12-19
EP03100583 2003-03-07
EP03100583 2003-03-07
EP03103340 2003-09-10
EP03103340 2003-09-10
PCT/IB2003/005740 WO2004057676A2 (en) 2002-12-19 2003-12-05 Electric device with phase change material and parallel heater

Publications (2)

Publication Number Publication Date
DE60312040D1 true DE60312040D1 (de) 2007-04-05
DE60312040T2 DE60312040T2 (de) 2007-12-13

Family

ID=32685712

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60312040T Expired - Lifetime DE60312040T2 (de) 2002-12-19 2003-12-05 Elektrische vorrichtung mit phasenwechselmaterial und parallelheizung

Country Status (9)

Country Link
US (1) US7307267B2 (de)
EP (1) EP1576670B1 (de)
JP (1) JP2006511973A (de)
KR (1) KR20050084319A (de)
AT (1) ATE354866T1 (de)
AU (1) AU2003303171A1 (de)
DE (1) DE60312040T2 (de)
TW (1) TW200503113A (de)
WO (1) WO2004057676A2 (de)

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US8779474B2 (en) 2002-12-19 2014-07-15 Nxp, B.V. Electric device comprising phase change material
DE102004041894B3 (de) * 2004-08-30 2006-03-09 Infineon Technologies Ag Speicherbauelement (CBRAM) mit Speicherzellen auf der Basis eines in seinem Widerstandswert änderbaren aktiven Festkörper-Elektrolytmaterials und Herstellungsverfahren dafür
KR100568543B1 (ko) * 2004-08-31 2006-04-07 삼성전자주식회사 작은 접점을 갖는 상변화 기억 소자의 제조방법
US7023008B1 (en) * 2004-09-30 2006-04-04 Infineon Technologies Ag Resistive memory element
KR100842903B1 (ko) * 2005-06-10 2008-07-02 주식회사 하이닉스반도체 상변환 기억 소자 및 그의 제조방법
JP4560818B2 (ja) * 2005-07-22 2010-10-13 エルピーダメモリ株式会社 半導体装置及びその製造方法
JP2007080311A (ja) * 2005-09-12 2007-03-29 Sony Corp 記憶装置及び半導体装置
DE602005011972D1 (de) * 2005-09-14 2009-02-05 St Microelectronics Srl Ringförmiger Heizer für eine Phasenübergangsspeichervorrichtung
US7671356B2 (en) * 2005-11-03 2010-03-02 Elpida Memory, Inc. Electrically rewritable non-volatile memory element and method of manufacturing the same
JP4950490B2 (ja) * 2005-12-28 2012-06-13 株式会社東芝 不揮発性スイッチング素子およびその製造方法ならびに不揮発性スイッチング素子を有する集積回路
KR100660287B1 (ko) * 2005-12-29 2006-12-20 동부일렉트로닉스 주식회사 상변화 메모리 및 그 제조 방법
US7723712B2 (en) * 2006-03-17 2010-05-25 Micron Technology, Inc. Reduced power consumption phase change memory and methods for forming the same
JP4989631B2 (ja) 2006-03-30 2012-08-01 パナソニック株式会社 不揮発性記憶素子
US9178141B2 (en) 2006-04-04 2015-11-03 Micron Technology, Inc. Memory elements using self-aligned phase change material layers and methods of manufacturing same
US7812334B2 (en) * 2006-04-04 2010-10-12 Micron Technology, Inc. Phase change memory elements using self-aligned phase change material layers and methods of making and using same
JP4437479B2 (ja) 2006-08-02 2010-03-24 株式会社半導体理工学研究センター 相変化メモリ素子
US7800092B2 (en) 2006-08-15 2010-09-21 Micron Technology, Inc. Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using
JP4267013B2 (ja) 2006-09-12 2009-05-27 エルピーダメモリ株式会社 半導体装置の製造方法
JP4257354B2 (ja) 2006-09-20 2009-04-22 エルピーダメモリ株式会社 相変化メモリ
KR100764343B1 (ko) * 2006-09-22 2007-10-08 주식회사 하이닉스반도체 비휘발성 메모리 소자 및 그 제조방법
KR100855855B1 (ko) * 2006-10-04 2008-09-01 주식회사 하이닉스반도체 비휘발성 메모리 소자 및 그 제조방법
US20080160256A1 (en) * 2006-12-30 2008-07-03 Bristol Robert L Reduction of line edge roughness by chemical mechanical polishing
WO2008120126A1 (en) * 2007-03-30 2008-10-09 Nxp B.V. An electronic device, and a method of operating an electronic device
EP2140509B1 (de) 2007-04-20 2013-02-27 Nxp B.V. Elektronische komponente und verfahren zur herstellung einer elektronischen komponente
US7719886B2 (en) * 2007-05-03 2010-05-18 Qimonda North America Corp. Multi-level resistive memory cell using different crystallization speeds
KR100888617B1 (ko) * 2007-06-15 2009-03-17 삼성전자주식회사 상변화 메모리 장치 및 그 형성 방법
US7811851B2 (en) * 2007-09-28 2010-10-12 Freescale Semiconductor, Inc. Phase change memory structures
US7888155B2 (en) * 2009-03-16 2011-02-15 Industrial Technology Research Institute Phase-change memory element and method for fabricating the same
US8077504B2 (en) * 2009-04-09 2011-12-13 Qualcomm Incorporated Shallow trench type quadri-cell of phase-change random access memory (PRAM)
US20110108792A1 (en) * 2009-11-11 2011-05-12 International Business Machines Corporation Single Crystal Phase Change Material
US8233317B2 (en) 2009-11-16 2012-07-31 International Business Machines Corporation Phase change memory device suitable for high temperature operation
US8470635B2 (en) 2009-11-30 2013-06-25 Micron Technology, Inc. Keyhole-free sloped heater for phase change memory
US9269899B1 (en) * 2015-02-05 2016-02-23 Micron Technology, Inc. Electronic device, memory cell, and method of flowing electric current

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US7009694B2 (en) * 2004-05-28 2006-03-07 International Business Machines Corporation Indirect switching and sensing of phase change memory cells

Also Published As

Publication number Publication date
US20060208847A1 (en) 2006-09-21
DE60312040T2 (de) 2007-12-13
TW200503113A (en) 2005-01-16
WO2004057676A2 (en) 2004-07-08
AU2003303171A1 (en) 2004-07-14
US7307267B2 (en) 2007-12-11
EP1576670A2 (de) 2005-09-21
EP1576670B1 (de) 2007-02-21
JP2006511973A (ja) 2006-04-06
KR20050084319A (ko) 2005-08-26
ATE354866T1 (de) 2007-03-15
WO2004057676A3 (en) 2004-09-02

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: LANKHORST, MARTIJN H. R., EINDHOVEN, NL

Inventor name: MEINDERS, ERWIN R., EINDHOVEN, NL

Inventor name: WOLTERS, ROBERTUS A. M., EINDHOVEN, NL

Inventor name: WIDDERSHOVEN, FRANCISCUS P., EINDHOVEN, NL

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL

8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN