TW200503113A - Electric device with phase change material and parallel heater - Google Patents
Electric device with phase change material and parallel heaterInfo
- Publication number
- TW200503113A TW200503113A TW092135583A TW92135583A TW200503113A TW 200503113 A TW200503113 A TW 200503113A TW 092135583 A TW092135583 A TW 092135583A TW 92135583 A TW92135583 A TW 92135583A TW 200503113 A TW200503113 A TW 200503113A
- Authority
- TW
- Taiwan
- Prior art keywords
- change material
- phase
- phase change
- electric device
- parallel heater
- Prior art date
Links
- 239000012782 phase change material Substances 0.000 title abstract 4
- 238000010438 heat treatment Methods 0.000 abstract 2
- 230000007704 transition Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
- H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
- H10N70/8613—Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/90—Bulk effect device making
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Control Of Resistance Heating (AREA)
- Resistance Heating (AREA)
- Constitution Of High-Frequency Heating (AREA)
- General Induction Heating (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02080430 | 2002-12-19 | ||
EP03100583 | 2003-03-07 | ||
EP03103340 | 2003-09-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200503113A true TW200503113A (en) | 2005-01-16 |
Family
ID=32685712
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW092135583A TW200503113A (en) | 2002-12-19 | 2003-12-16 | Electric device with phase change material and parallel heater |
Country Status (9)
Country | Link |
---|---|
US (1) | US7307267B2 (zh) |
EP (1) | EP1576670B1 (zh) |
JP (1) | JP2006511973A (zh) |
KR (1) | KR20050084319A (zh) |
AT (1) | ATE354866T1 (zh) |
AU (1) | AU2003303171A1 (zh) |
DE (1) | DE60312040T2 (zh) |
TW (1) | TW200503113A (zh) |
WO (1) | WO2004057676A2 (zh) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050092017A (ko) | 2002-12-19 | 2005-09-16 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 위상 변경 물질을 포함하는 전기 디바이스와 이를 포함하는장치 |
DE102004041894B3 (de) | 2004-08-30 | 2006-03-09 | Infineon Technologies Ag | Speicherbauelement (CBRAM) mit Speicherzellen auf der Basis eines in seinem Widerstandswert änderbaren aktiven Festkörper-Elektrolytmaterials und Herstellungsverfahren dafür |
KR100568543B1 (ko) * | 2004-08-31 | 2006-04-07 | 삼성전자주식회사 | 작은 접점을 갖는 상변화 기억 소자의 제조방법 |
US7023008B1 (en) * | 2004-09-30 | 2006-04-04 | Infineon Technologies Ag | Resistive memory element |
KR100842903B1 (ko) * | 2005-06-10 | 2008-07-02 | 주식회사 하이닉스반도체 | 상변환 기억 소자 및 그의 제조방법 |
JP4560818B2 (ja) * | 2005-07-22 | 2010-10-13 | エルピーダメモリ株式会社 | 半導体装置及びその製造方法 |
JP2007080311A (ja) * | 2005-09-12 | 2007-03-29 | Sony Corp | 記憶装置及び半導体装置 |
DE602005011972D1 (de) * | 2005-09-14 | 2009-02-05 | St Microelectronics Srl | Ringförmiger Heizer für eine Phasenübergangsspeichervorrichtung |
US7671356B2 (en) * | 2005-11-03 | 2010-03-02 | Elpida Memory, Inc. | Electrically rewritable non-volatile memory element and method of manufacturing the same |
JP4950490B2 (ja) * | 2005-12-28 | 2012-06-13 | 株式会社東芝 | 不揮発性スイッチング素子およびその製造方法ならびに不揮発性スイッチング素子を有する集積回路 |
KR100660287B1 (ko) * | 2005-12-29 | 2006-12-20 | 동부일렉트로닉스 주식회사 | 상변화 메모리 및 그 제조 방법 |
US7723712B2 (en) * | 2006-03-17 | 2010-05-25 | Micron Technology, Inc. | Reduced power consumption phase change memory and methods for forming the same |
US7884346B2 (en) | 2006-03-30 | 2011-02-08 | Panasonic Corporation | Nonvolatile memory element and manufacturing method thereof |
US9178141B2 (en) | 2006-04-04 | 2015-11-03 | Micron Technology, Inc. | Memory elements using self-aligned phase change material layers and methods of manufacturing same |
US7812334B2 (en) * | 2006-04-04 | 2010-10-12 | Micron Technology, Inc. | Phase change memory elements using self-aligned phase change material layers and methods of making and using same |
JP4437479B2 (ja) | 2006-08-02 | 2010-03-24 | 株式会社半導体理工学研究センター | 相変化メモリ素子 |
US7800092B2 (en) | 2006-08-15 | 2010-09-21 | Micron Technology, Inc. | Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using |
JP4267013B2 (ja) | 2006-09-12 | 2009-05-27 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
JP4257354B2 (ja) | 2006-09-20 | 2009-04-22 | エルピーダメモリ株式会社 | 相変化メモリ |
KR100764343B1 (ko) * | 2006-09-22 | 2007-10-08 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자 및 그 제조방법 |
KR100855855B1 (ko) * | 2006-10-04 | 2008-09-01 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자 및 그 제조방법 |
US20080160256A1 (en) * | 2006-12-30 | 2008-07-03 | Bristol Robert L | Reduction of line edge roughness by chemical mechanical polishing |
WO2008120126A1 (en) | 2007-03-30 | 2008-10-09 | Nxp B.V. | An electronic device, and a method of operating an electronic device |
CN101663771A (zh) | 2007-04-20 | 2010-03-03 | Nxp股份有限公司 | 电子器件和制造电子器件的方法 |
US7719886B2 (en) * | 2007-05-03 | 2010-05-18 | Qimonda North America Corp. | Multi-level resistive memory cell using different crystallization speeds |
KR100888617B1 (ko) * | 2007-06-15 | 2009-03-17 | 삼성전자주식회사 | 상변화 메모리 장치 및 그 형성 방법 |
US7811851B2 (en) * | 2007-09-28 | 2010-10-12 | Freescale Semiconductor, Inc. | Phase change memory structures |
US7888155B2 (en) * | 2009-03-16 | 2011-02-15 | Industrial Technology Research Institute | Phase-change memory element and method for fabricating the same |
US8077504B2 (en) * | 2009-04-09 | 2011-12-13 | Qualcomm Incorporated | Shallow trench type quadri-cell of phase-change random access memory (PRAM) |
US20110108792A1 (en) * | 2009-11-11 | 2011-05-12 | International Business Machines Corporation | Single Crystal Phase Change Material |
US8233317B2 (en) | 2009-11-16 | 2012-07-31 | International Business Machines Corporation | Phase change memory device suitable for high temperature operation |
US8470635B2 (en) | 2009-11-30 | 2013-06-25 | Micron Technology, Inc. | Keyhole-free sloped heater for phase change memory |
US9269899B1 (en) * | 2015-02-05 | 2016-02-23 | Micron Technology, Inc. | Electronic device, memory cell, and method of flowing electric current |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3846767A (en) * | 1973-10-24 | 1974-11-05 | Energy Conversion Devices Inc | Method and means for resetting filament-forming memory semiconductor device |
DE59406312D1 (de) * | 1993-10-15 | 1998-07-30 | Abb Research Ltd | Verbundwerkstoff |
US5761115A (en) * | 1996-05-30 | 1998-06-02 | Axon Technologies Corporation | Programmable metallization cell structure and method of making same |
US6087674A (en) * | 1996-10-28 | 2000-07-11 | Energy Conversion Devices, Inc. | Memory element with memory material comprising phase-change material and dielectric material |
US5933365A (en) * | 1997-06-19 | 1999-08-03 | Energy Conversion Devices, Inc. | Memory element with energy control mechanism |
JP4558950B2 (ja) * | 1999-03-25 | 2010-10-06 | オヴォニクス インコーポレイテッド | 改善された接合を有する電気的にプログラム可能なメモリ素子 |
US6314014B1 (en) * | 1999-12-16 | 2001-11-06 | Ovonyx, Inc. | Programmable resistance memory arrays with reference cells |
US6339544B1 (en) * | 2000-09-29 | 2002-01-15 | Intel Corporation | Method to enhance performance of thermal resistor device |
EP1331675B1 (en) | 2002-01-17 | 2007-05-23 | STMicroelectronics S.r.l. | Integrated resistive element, phase-change memory element including said resistive element, and method of manufacture thereof |
US7009694B2 (en) * | 2004-05-28 | 2006-03-07 | International Business Machines Corporation | Indirect switching and sensing of phase change memory cells |
-
2003
- 2003-12-05 AT AT03813663T patent/ATE354866T1/de not_active IP Right Cessation
- 2003-12-05 DE DE60312040T patent/DE60312040T2/de not_active Expired - Lifetime
- 2003-12-05 EP EP03813663A patent/EP1576670B1/en not_active Expired - Lifetime
- 2003-12-05 WO PCT/IB2003/005740 patent/WO2004057676A2/en active IP Right Grant
- 2003-12-05 US US10/539,102 patent/US7307267B2/en not_active Expired - Lifetime
- 2003-12-05 JP JP2005502600A patent/JP2006511973A/ja not_active Withdrawn
- 2003-12-05 KR KR1020057010991A patent/KR20050084319A/ko not_active Application Discontinuation
- 2003-12-05 AU AU2003303171A patent/AU2003303171A1/en not_active Abandoned
- 2003-12-16 TW TW092135583A patent/TW200503113A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
DE60312040D1 (de) | 2007-04-05 |
WO2004057676A3 (en) | 2004-09-02 |
KR20050084319A (ko) | 2005-08-26 |
WO2004057676A2 (en) | 2004-07-08 |
ATE354866T1 (de) | 2007-03-15 |
US7307267B2 (en) | 2007-12-11 |
DE60312040T2 (de) | 2007-12-13 |
EP1576670B1 (en) | 2007-02-21 |
AU2003303171A1 (en) | 2004-07-14 |
JP2006511973A (ja) | 2006-04-06 |
US20060208847A1 (en) | 2006-09-21 |
EP1576670A2 (en) | 2005-09-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200503113A (en) | Electric device with phase change material and parallel heater | |
AU2003283730A8 (en) | Electric device comprising a layer of phase change material and method of manufacturing the same | |
AU2003259447A1 (en) | Electric device comprising phase change material | |
WO2005043684A3 (en) | Electrical connection of flexible conductive strands in a flexible body | |
AU2001262285A1 (en) | Electric heating device | |
TW200620535A (en) | Resistive memory element | |
MY147554A (en) | Transparent glazing with a resistive heating coating | |
EA200601955A1 (ru) | Ограниченные по температуре нагреватели, применяемые для нагревания подземных пластов | |
TWI263365B (en) | Multilayered phase change memory | |
EP1905271B8 (en) | Heating element for application in a device for heating liquids | |
HK1081129A1 (en) | Methods and apparatus for a variable resistor configured to compensate for non-lin-earities in a heating element circuit | |
TW200625705A (en) | Electric device with nanowires comprising a phase change material | |
NZ526671A (en) | Electric heating/warming fabric articles | |
WO2005009500A3 (en) | Medical fluid warming system | |
NZ178774A (en) | Resistive heater: ptc layer on constant resistance layer | |
TW200603271A (en) | Electric device comprising phase change material | |
WO2006115569A3 (en) | Instant water heater with ptc plastic conductive electrodes | |
DE50108215D1 (de) | Elektrische Heizeinheit, insbesondere für flüssige Medien | |
GB0321916D0 (en) | Self-regulating electrical heating cable | |
TW200514105A (en) | PTC thermister, and circuit protection method | |
DE502005000452D1 (de) | Dimmeranordnung | |
WO2005034579A3 (en) | Regulated flexible heater | |
AU2003279920A1 (en) | Printed circuit heaters with ultrathin low resistivity materials | |
EP0977337A3 (de) | Schaltungsanordnung zur Messung und Begrenzung von Strömen in Umrichtern zur Speisung von Motoren | |
WO2003079727A3 (de) | Heizleiter und verwendung des heizleiters |