CN1965402A - 用于形成沟槽隔离结构的方法 - Google Patents

用于形成沟槽隔离结构的方法 Download PDF

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Publication number
CN1965402A
CN1965402A CNA200580017325XA CN200580017325A CN1965402A CN 1965402 A CN1965402 A CN 1965402A CN A200580017325X A CNA200580017325X A CN A200580017325XA CN 200580017325 A CN200580017325 A CN 200580017325A CN 1965402 A CN1965402 A CN 1965402A
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CN
China
Prior art keywords
film
silicon nitride
silicon
substrate
trench isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA200580017325XA
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English (en)
Chinese (zh)
Inventor
名仓映乃
清水泰雄
一山昌章
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AZ Electronic Materials Japan Co Ltd
Original Assignee
AZ Electronic Materials Japan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials Japan Co Ltd filed Critical AZ Electronic Materials Japan Co Ltd
Publication of CN1965402A publication Critical patent/CN1965402A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H10P14/6689—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Landscapes

  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
CNA200580017325XA 2004-06-04 2005-05-30 用于形成沟槽隔离结构的方法 Pending CN1965402A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004167435A JP2005347636A (ja) 2004-06-04 2004-06-04 トレンチ・アイソレーション構造の形成方法
JP167435/2004 2004-06-04

Publications (1)

Publication Number Publication Date
CN1965402A true CN1965402A (zh) 2007-05-16

Family

ID=35463125

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA200580017325XA Pending CN1965402A (zh) 2004-06-04 2005-05-30 用于形成沟槽隔离结构的方法

Country Status (7)

Country Link
US (1) US20080061398A1 (https=)
EP (1) EP1768175B1 (https=)
JP (1) JP2005347636A (https=)
KR (1) KR20070028518A (https=)
CN (1) CN1965402A (https=)
TW (1) TW200625520A (https=)
WO (1) WO2005119758A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103531522A (zh) * 2013-10-30 2014-01-22 上海华力微电子有限公司 浅沟槽隔离结构制备方法
CN107393864A (zh) * 2017-08-29 2017-11-24 睿力集成电路有限公司 一种隔离结构及其制造方法
CN110739264A (zh) * 2019-10-30 2020-01-31 上海华力微电子有限公司 浅沟槽隔离结构及其形成方法、半导体器件的制作方法

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KR20090057397A (ko) * 2006-09-21 2009-06-05 제이에스알 가부시끼가이샤 실리콘 수지 조성물 및 트렌치 아이솔레이션의 형성 방법
JP2008266119A (ja) * 2006-11-24 2008-11-06 Jsr Corp シリコーン樹脂、シリコーン樹脂組成物およびトレンチアイソレーションの形成方法
JP4748042B2 (ja) 2006-11-30 2011-08-17 東京エレクトロン株式会社 熱処理方法、熱処理装置及び記憶媒体
JP2009044000A (ja) * 2007-08-09 2009-02-26 Toshiba Corp 不揮発性半導体メモリ及びその製造方法
KR20100109939A (ko) * 2008-02-01 2010-10-11 제이에스알 가부시끼가이샤 트렌치 아이솔레이션의 형성 방법
US7999355B2 (en) 2008-07-11 2011-08-16 Air Products And Chemicals, Inc. Aminosilanes for shallow trench isolation films
JP4886021B2 (ja) 2008-12-16 2012-02-29 エルピーダメモリ株式会社 半導体装置及びその製造方法
JP5490753B2 (ja) * 2010-07-29 2014-05-14 東京エレクトロン株式会社 トレンチの埋め込み方法および成膜システム
KR101683071B1 (ko) 2010-09-08 2016-12-06 삼성전자 주식회사 반도체 소자 및 그 제조방법
JP5675331B2 (ja) * 2010-12-27 2015-02-25 東京エレクトロン株式会社 トレンチの埋め込み方法
KR101361454B1 (ko) * 2012-08-23 2014-02-21 이근수 반도체 소자의 실리콘 산화막 형성 방법
KR101825546B1 (ko) * 2014-05-26 2018-02-05 제일모직 주식회사 실리카계 막 형성용 조성물, 및 실리카계 막의 제조방법
US10020185B2 (en) 2014-10-07 2018-07-10 Samsung Sdi Co., Ltd. Composition for forming silica layer, silica layer, and electronic device
KR101837971B1 (ko) 2014-12-19 2018-03-13 삼성에스디아이 주식회사 실리카계 막 형성용　조성물, 실리카계 막, 및 전자 디바이스
KR101833800B1 (ko) 2014-12-19 2018-03-02 삼성에스디아이 주식회사 실리카계 막 형성용 조성물, 실리카계 막의 제조방법 및 상기 실리카계 막을 포함하는 전자 소자
CN106356281B (zh) * 2015-07-16 2019-10-25 中芯国际集成电路制造(上海)有限公司 二氧化硅介电薄膜制备方法
KR20170014946A (ko) 2015-07-31 2017-02-08 삼성에스디아이 주식회사 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막
JP6573578B2 (ja) * 2016-05-31 2019-09-11 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
SG11202001450UA (en) * 2017-09-12 2020-03-30 Applied Materials Inc Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
CN110890268A (zh) * 2018-09-10 2020-03-17 长鑫存储技术有限公司 晶圆镀膜方法与设备

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JP5020425B2 (ja) * 2000-04-25 2012-09-05 Ａｚエレクトロニックマテリアルズ株式会社 微細溝をシリカ質材料で埋封する方法
JP2002043408A (ja) * 2000-07-28 2002-02-08 Nec Kansai Ltd 半導体装置の製造方法
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103531522A (zh) * 2013-10-30 2014-01-22 上海华力微电子有限公司 浅沟槽隔离结构制备方法
CN103531522B (zh) * 2013-10-30 2016-08-17 上海华力微电子有限公司 浅沟槽隔离结构制备方法
CN107393864A (zh) * 2017-08-29 2017-11-24 睿力集成电路有限公司 一种隔离结构及其制造方法
CN110739264A (zh) * 2019-10-30 2020-01-31 上海华力微电子有限公司 浅沟槽隔离结构及其形成方法、半导体器件的制作方法
CN110739264B (zh) * 2019-10-30 2022-08-09 上海华力微电子有限公司 浅沟槽隔离结构及其形成方法、半导体器件的制作方法

Also Published As

Publication number Publication date
EP1768175A1 (en) 2007-03-28
US20080061398A1 (en) 2008-03-13
EP1768175B1 (en) 2019-05-15
EP1768175A4 (en) 2011-07-27
TW200625520A (en) 2006-07-16
KR20070028518A (ko) 2007-03-12
EP1768175A8 (en) 2007-05-09
JP2005347636A (ja) 2005-12-15
WO2005119758A1 (ja) 2005-12-15

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