TW200625520A - Method for forming trench isolation structure - Google Patents

Method for forming trench isolation structure

Info

Publication number
TW200625520A
TW200625520A TW094118295A TW94118295A TW200625520A TW 200625520 A TW200625520 A TW 200625520A TW 094118295 A TW094118295 A TW 094118295A TW 94118295 A TW94118295 A TW 94118295A TW 200625520 A TW200625520 A TW 200625520A
Authority
TW
Taiwan
Prior art keywords
isolation structure
trench isolation
substrate
substance film
silica substance
Prior art date
Application number
TW094118295A
Other languages
English (en)
Chinese (zh)
Inventor
Teruno Nagura
Yasuo Shimizu
Masaaki Ichiyama
Original Assignee
Az Electronic Materials Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Japan filed Critical Az Electronic Materials Japan
Publication of TW200625520A publication Critical patent/TW200625520A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H10P14/6689—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Landscapes

  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
TW094118295A 2004-06-04 2005-06-03 Method for forming trench isolation structure TW200625520A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004167435A JP2005347636A (ja) 2004-06-04 2004-06-04 トレンチ・アイソレーション構造の形成方法

Publications (1)

Publication Number Publication Date
TW200625520A true TW200625520A (en) 2006-07-16

Family

ID=35463125

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094118295A TW200625520A (en) 2004-06-04 2005-06-03 Method for forming trench isolation structure

Country Status (7)

Country Link
US (1) US20080061398A1 (https=)
EP (1) EP1768175B1 (https=)
JP (1) JP2005347636A (https=)
KR (1) KR20070028518A (https=)
CN (1) CN1965402A (https=)
TW (1) TW200625520A (https=)
WO (1) WO2005119758A1 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4901221B2 (ja) * 2006-01-17 2012-03-21 株式会社東芝 半導体装置の製造方法
JP2008101206A (ja) * 2006-09-21 2008-05-01 Jsr Corp シリコーン樹脂、シリコーン樹脂組成物およびトレンチアイソレーションの形成方法
KR20090057397A (ko) * 2006-09-21 2009-06-05 제이에스알 가부시끼가이샤 실리콘 수지 조성물 및 트렌치 아이솔레이션의 형성 방법
JP2008266119A (ja) * 2006-11-24 2008-11-06 Jsr Corp シリコーン樹脂、シリコーン樹脂組成物およびトレンチアイソレーションの形成方法
JP4748042B2 (ja) 2006-11-30 2011-08-17 東京エレクトロン株式会社 熱処理方法、熱処理装置及び記憶媒体
JP2009044000A (ja) * 2007-08-09 2009-02-26 Toshiba Corp 不揮発性半導体メモリ及びその製造方法
KR20100109939A (ko) * 2008-02-01 2010-10-11 제이에스알 가부시끼가이샤 트렌치 아이솔레이션의 형성 방법
US7999355B2 (en) 2008-07-11 2011-08-16 Air Products And Chemicals, Inc. Aminosilanes for shallow trench isolation films
JP4886021B2 (ja) 2008-12-16 2012-02-29 エルピーダメモリ株式会社 半導体装置及びその製造方法
JP5490753B2 (ja) * 2010-07-29 2014-05-14 東京エレクトロン株式会社 トレンチの埋め込み方法および成膜システム
KR101683071B1 (ko) 2010-09-08 2016-12-06 삼성전자 주식회사 반도체 소자 및 그 제조방법
JP5675331B2 (ja) * 2010-12-27 2015-02-25 東京エレクトロン株式会社 トレンチの埋め込み方法
KR101361454B1 (ko) * 2012-08-23 2014-02-21 이근수 반도체 소자의 실리콘 산화막 형성 방법
CN103531522B (zh) * 2013-10-30 2016-08-17 上海华力微电子有限公司 浅沟槽隔离结构制备方法
KR101825546B1 (ko) * 2014-05-26 2018-02-05 제일모직 주식회사 실리카계 막 형성용 조성물, 및 실리카계 막의 제조방법
US10020185B2 (en) 2014-10-07 2018-07-10 Samsung Sdi Co., Ltd. Composition for forming silica layer, silica layer, and electronic device
KR101837971B1 (ko) 2014-12-19 2018-03-13 삼성에스디아이 주식회사 실리카계 막 형성용　조성물, 실리카계 막, 및 전자 디바이스
KR101833800B1 (ko) 2014-12-19 2018-03-02 삼성에스디아이 주식회사 실리카계 막 형성용 조성물, 실리카계 막의 제조방법 및 상기 실리카계 막을 포함하는 전자 소자
CN106356281B (zh) * 2015-07-16 2019-10-25 中芯国际集成电路制造(上海)有限公司 二氧化硅介电薄膜制备方法
KR20170014946A (ko) 2015-07-31 2017-02-08 삼성에스디아이 주식회사 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막
JP6573578B2 (ja) * 2016-05-31 2019-09-11 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
CN107393864A (zh) * 2017-08-29 2017-11-24 睿力集成电路有限公司 一种隔离结构及其制造方法
SG11202001450UA (en) * 2017-09-12 2020-03-30 Applied Materials Inc Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
CN110890268A (zh) * 2018-09-10 2020-03-17 长鑫存储技术有限公司 晶圆镀膜方法与设备
CN110739264B (zh) * 2019-10-30 2022-08-09 上海华力微电子有限公司 浅沟槽隔离结构及其形成方法、半导体器件的制作方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03178412A (ja) * 1989-12-07 1991-08-02 Mazda Motor Corp インモールドコート方法
JPH0897277A (ja) * 1994-09-29 1996-04-12 Toshiba Corp 半導体装置の製造方法
JPH10303289A (ja) * 1997-04-30 1998-11-13 Hitachi Ltd 半導体集積回路装置の製造方法
JP3178412B2 (ja) * 1998-04-27 2001-06-18 日本電気株式会社 トレンチ・アイソレーション構造の形成方法
JP5020425B2 (ja) * 2000-04-25 2012-09-05 Ａｚエレクトロニックマテリアルズ株式会社 微細溝をシリカ質材料で埋封する方法
JP2002043408A (ja) * 2000-07-28 2002-02-08 Nec Kansai Ltd 半導体装置の製造方法
JP2002088156A (ja) * 2000-09-07 2002-03-27 Dow Corning Corp 結晶性水素化シルセスキオキサンの製造方法
KR100436495B1 (ko) * 2001-06-07 2004-06-22 삼성전자주식회사 스핀온글래스 조성물을 이용한 반도체 장치의 산화실리콘막 형성방법 및 이를 이용한 반도체 장치의 소자분리 방법
US6479405B2 (en) * 2000-10-12 2002-11-12 Samsung Electronics Co., Ltd. Method of forming silicon oxide layer in semiconductor manufacturing process using spin-on glass composition and isolation method using the same method
KR100354441B1 (en) * 2000-12-27 2002-09-28 Samsung Electronics Co Ltd Method for fabricating spin-on-glass insulation layer of semiconductor device
KR100568100B1 (ko) * 2001-03-05 2006-04-05 삼성전자주식회사 트렌치형 소자 분리막 형성 방법
KR100512167B1 (ko) * 2001-03-12 2005-09-02 삼성전자주식회사 트렌치 소자 분리형 반도체 장치 및 트렌치형 소자 분리막형성방법
US6699799B2 (en) * 2001-05-09 2004-03-02 Samsung Electronics Co., Ltd. Method of forming a semiconductor device
JP5121102B2 (ja) * 2001-07-11 2013-01-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US6767642B2 (en) * 2002-03-11 2004-07-27 E. I. Du Pont Nemours And Company Preparation and use of crosslinkable acrylosilane polymers containing vinyl silane monomers
JP2004273519A (ja) * 2003-03-05 2004-09-30 Clariant (Japan) Kk トレンチ・アイソレーション構造の形成方法
JP2004311487A (ja) * 2003-04-02 2004-11-04 Hitachi Ltd 半導体装置の製造方法
US7521378B2 (en) * 2004-07-01 2009-04-21 Micron Technology, Inc. Low temperature process for polysilazane oxidation/densification

Also Published As

Publication number Publication date
EP1768175A1 (en) 2007-03-28
US20080061398A1 (en) 2008-03-13
EP1768175B1 (en) 2019-05-15
EP1768175A4 (en) 2011-07-27
CN1965402A (zh) 2007-05-16
KR20070028518A (ko) 2007-03-12
EP1768175A8 (en) 2007-05-09
JP2005347636A (ja) 2005-12-15
WO2005119758A1 (ja) 2005-12-15

Similar Documents

Publication Publication Date Title
TW200625520A (en) Method for forming trench isolation structure
ATE246268T1 (de) Kondensationsbeschichtungsverfahren
DE60123813D1 (de) Sperrschicht für glasartige werkstoffe
TW200606169A (en) Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
WO2005108625A3 (en) Method for preparing substrates having immobilized molecules and substrates
AU2002241147A1 (en) Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates
WO2004063421A3 (en) Deposition chamber surface enhancement and resulting deposition chambers
FR2787350B1 (fr) Vitrage a revetement mesoporeux fonctionnel, notamment hydrophobe
AU2003238350A1 (en) Components having crystalline coatings of the aluminum oxide/silicon oxide system and method for the production thereof
WO2010112358A3 (de) Verfahren zur beschichtung einer oberfläche eines bauteils
SG171631A1 (en) A method for the manufacture of a coating
TNSN07064A1 (en) Atmospheric pressure chemical vapor deposition
WO2005121396A3 (en) Controlled deposition of silicon-containing coatings adhered by an oxide layer
EP1391491A4 (en) METHOD FOR PRODUCING A THICK FILM BASED ON SILICON DIOXIDE
TW200738907A (en) Thermal barrier coatings and processes for applying same
TW200608513A (en) Materials suitable for shallow trench isolation
TW200420355A (en) Method and apparatus for control of layer thicknesses
FR2856047B1 (fr) Procede de collage de substrats micro-structures
WO2007046560A3 (en) Inorganic substrate with a thin silica type glass layer, method of manufacturing the aforementioned substrate, coating agent, and a semiconductor device
WO2010121101A3 (en) Surface modification for enhanced silanation of ceramic materials
NO20041978D0 (no) Belegningsforloper og fremgangsmate for a belegge et substrat med et motstandsdyktig lag
ATE291565T1 (de) Beschichtung eines glas-substrates mit einer siliziumhaltigen schicht
TW200625517A (en) Gradient deposition of low-k CVD materials
EP1249860A3 (en) Method to improve copper thin film adhesion to metal nitride substrates by the addition of water
WO2005019351A3 (en) Methods for forming composite coatings on mems devices