CN1883807A - 用于制造碳纳米管的催化剂的制备方法 - Google Patents

用于制造碳纳米管的催化剂的制备方法 Download PDF

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CN1883807A
CN1883807A CNA2005100794134A CN200510079413A CN1883807A CN 1883807 A CN1883807 A CN 1883807A CN A2005100794134 A CNA2005100794134 A CN A2005100794134A CN 200510079413 A CN200510079413 A CN 200510079413A CN 1883807 A CN1883807 A CN 1883807A
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韩仁泽
金夏辰
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Samsung SDI Co Ltd
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Abstract

本发明提供一种以更高的均匀性形成催化剂颗粒的新方法,该催化剂用于生长碳纳米管;以及一种均匀性得到提高的碳纳米管的合成方法。所述形成催化剂颗粒的方法包括:将催化金属前体溶液涂布到基材上;冷冻干燥涂布到基材上的催化金属前体溶液;及还原冷冻干燥的催化金属前体为催化金属。该形成催化剂颗粒的方法,在通过冷冻干燥催化剂金属前体溶液形成催化剂颗粒时,可以使催化剂颗粒的结块和/或重结晶最小化。通过该方法形成的催化剂颗粒,具有非常均匀的颗粒尺寸,并非常均匀地分布在基材上。

Description

用于制造碳纳米管的催化剂的制备方法
                        技术领域
本发明涉及一种用于制造碳纳米管的催化剂的制备方法,以及一种利用该催化剂制备碳纳米管的方法。
                        背景技术
碳纳米管具有直径为几个纳米且纵横比非常大(约为10~1000)的圆柱形结构。在碳纳米管中,碳原子一般以六边形的蜂巢形图案排列。一个碳原子与三个相邻的碳原子结合。根据其结构,碳纳米管可以是导体或半导体。作为导体,碳纳米管有高的电导率。此外,碳纳米管有优良的机械强度、太拉(万亿)级的杨氏模量和高的热导率。具有这些性能的碳纳米管可以有利地用于不同的技术领域,如FED的发射器、二次电池的阴极材料、燃料电池的催化剂载体、高强度的复合材料等。
制备碳纳米管的方法的实例包括:电弧放电、激光沉积、等离子体增强的化学气相沉积(PECVD)、化学气相沉积、气相生长、电解等。气相生长适于制备松散型碳纳米管,因为它通过直接供应反应气体和催化金属到反应器中而不利用基材,合成气相的碳纳米管。电弧放电和激光沉积制备的碳纳米管的产率较低。当利用电弧放电和激光沉积时,难于控制碳纳米管的直径和长度。而且,在电弧放电和激光沉积中,除了碳纳米管外,还产生大量的无定形碳簇,因而必须进行复杂的纯化过程。
一般使用化学气相沉积法(CVD),如热化学气相沉积、低压化学气相沉积和PECVD,以在基材上形成碳纳米管。在PECVD中,通过用等离子体活化气体,可以在低温下合成碳纳米管。在PECVD中,相对容易控制碳纳米管的直径、长度、密度等。
对于化学气相沉积(CVD)法,催化剂颗粒预先分散在用于生长碳纳米管的基材上,以在基材上形成的密度均匀的碳纳米管。
例如,韩国专利待审公开第2001-0049398号公开了一种形成多个催化剂颗粒的方法,其通过在基材上形成催化金属膜,并用蚀刻气体蚀刻所述催化金属膜。
此外,Chemical Physics Letter,vol.377 p.49,2003公开了一种在基材上形成催化剂颗粒的方法,其通过涂布催化金属前体溶液到基材上,然后干燥并热处理所涂布的催化金属前体溶液。然而,在这种情况下,在干燥和热处理的过程中,发生催化金属的重结晶和结块,因此形成在基材上的催化剂颗粒的均匀性恶化。由于形成在基材上的催化剂颗粒的均匀性恶化,在催化颗粒的基础上生长的碳纳米管的直径和生产密度的均匀性都恶化。
通过测量催化剂颗粒的颗粒尺寸的均匀度和催化剂颗粒的生产密度的均匀度,可以评价形成在基材上的催化剂颗粒的均匀性。由迄今为止已知的方法所形成的催化剂颗粒的均匀性不够。因而,需要一种形成催化剂颗粒的新方法,以改善形成在基材上的催化剂颗粒的均匀性。
                        发明内容
本发明提供一种以更好的均匀性在基材上形成催化剂颗粒的新方法,所述催化剂颗粒用于在其上面生长碳纳米管。
本发明还提供一种合成均匀性得到提高的碳纳米管的方法。
根据本发明的一个方面,提供一种形成催化剂颗粒的方法,所述方法包括:涂布催化金属前体溶液到基材上;冷冻干燥涂布到基材上的所述催化金属前体溶液;及还原所述冷冻干燥的催化金属前体为催化金属。
当通过冷冻干燥所述催化金属前体溶液,形成催化金属颗粒时,所述形成催化剂颗粒的方法可以使催化金属颗粒的结块和/或重结晶最小。因此,通过本发明的方法形成的催化金属颗粒具有非常高的均匀性的颗粒尺寸,并且非常均匀地分布在基材上。
根据本发明的另一个方面,提供一种制造碳纳米管的方法,所述方法包括:通过涂布催化金属前体溶液到基材上,在基材上形成催化剂颗粒,所述催化剂颗粒用于在其上面生长碳纳米管,冷冻干燥涂布到基材上的所述催化金属前体溶液,及还原所述冷冻干燥的催化金属前体为催化金属;及通过供应碳源到催化剂颗粒,在所述催化剂颗粒上生长碳纳米管。
                         附图说明
通过参考附图详述其示例性的实施方式,本发明的上面和其它特点和优点将变得更显而易见,附图中:
图1为根据本发明的实施例制备的用于制造碳纳米管的催化剂颗粒的光学显微照片;
图2为根据本发明的实施例制备的碳纳米管的侧视图的电子显微镜照片;
图3为根据本发明的实施例制备的碳纳米管的俯视图的电子显微镜照片;
图4为根据对比例制备的用于制造碳纳米管的催化剂颗粒的光学显微照片;
图5为图4的局部的放大图;及
图6为根据对比例制备的碳纳米管的状态的电子显微镜照片。
                       具体实施方式
在下文,将详述根据本发明的实施方式的一种在基材上形成催化剂颗粒的方法,所述催化剂颗粒用于在其上面生长碳纳米管。形成催化剂颗粒的方法包括:涂布催化金属前体溶液到基材上;冷冻干燥涂布到基材上的所述催化金属前体溶液;及还原所述冷冻干燥的催化金属前体为催化金属。
所述催化金属前体溶液包括催化金属前体和溶解所述催化金属前体的溶剂。
催化金属前体可以是能够转换成金属颗粒的任何物质,所述金属颗粒用于在其上面可以生长碳纳米管。所述催化金属前体的实例包括有机金属化合物。所述有机金属化合物可以包含选自下列的至少一种金属元素:Fe、Co、Ni、Y、Mo、Cu、Pt、V和Ti。有机金属化合物的实例包括乙酸亚铁、草酸铁、乙酸钴、乙酸镍、二茂络铁或其混合物。
溶剂可以是可以溶解所述催化金属前体的任何液体物质。所述溶剂的实例包括乙醇、乙二醇、聚乙二醇、聚乙烯醇及其混合物。
不特别限制在所述催化金属前体溶液中的催化金属前体的浓度。如果在所述催化金属前体溶液中的催化金属前体的浓度太低,那么在随后的制造过程中可能不会产生碳纳米管。如果在所述催化金属前体溶液中的催化金属前体的浓度太高,那么在随后的制造过程中产生的碳纳米管的直径可能增加,或者所产生的碳纳米管或碳纳米纤维的结晶度可能降低。在所述催化金属前体溶液中的催化金属前体的浓度一般可以为约10~200mM。
基材可以由在其上面能够附着催化剂颗粒的任何物质组成,例如,具有高熔点的金属如Mo、Cr和W,硅,玻璃,塑料,石英等。
涂布所述催化金属前体溶液到基材上的方法,可以是能够均匀地涂布溶液在基材的表面上的任何方法。所述方法的实例包括浸涂,蒸发镀层,丝网印刷,旋涂等。这些方法还可以组合使用。
可以将所述催化金属前体溶液涂布到基材的全部表面上或仅在基材的一部分表面上。
冷冻干燥涂布到基材上的所述催化金属前体溶液。所述冷冻干燥过程包括:冷却涂布到基材上的催化金属前体溶液到所述催化金属前体溶液的凝固点下,及减压蒸发所述催化金属前体溶液中的溶剂。
所述催化金属前体溶液的凝固点,可以依据所述催化金属前体溶液的组成变化。即,催化金属前体溶液的凝固点可以由下列因素确定:催化金属前体的类型,溶剂的类型,催化金属前体的浓度等。经过热力学计算和试差法,本领域的技术人员可以很容易地确定催化金属前体溶液的凝固点。通过调整催化金属前体溶液的组成,也可以选择催化金属前体溶液的凝固点。
利用适合于所述催化金属前体溶液的凝固点的冷却方法,可以进行冷却涂布到基材上的催化金属前体溶液到催化剂溶液的凝固点下的过程。例如,可以使用制冷器,液氮等。当使用液氮时,通过浸渍带有涂布在其上的催化金属前体溶液的基材到液氮中,可以冷却涂布到基材上的所述催化金属前体溶液到所述催化金属前体溶液的凝固点下。
在涂布到基材上的所述催化金属前体溶液冻结后,所述对基材进行减压,以使得在冻结的催化金属前体溶液中的溶剂能蒸发。例如,将带有涂布在其上的冻结的催化金属前体溶液的基材放入到真空室中,然后降低真空室内部的压力。
降低了的压力应该足够,使得在冻结的催化金属前体溶液中的溶剂能蒸发。在下文,足以使在冻结的催化金属前体溶液中的溶剂能蒸发的降低了的压力缩写为“蒸发压力”。所述蒸发压力可以依据所使用的催化金属前体溶液的组成变化。即,由催化金属前体的类型、溶剂的类型、催化金属前体的浓度、凝固点等,可以确定蒸发压力。经过热力学计算和试差法,本领域的技术人员可以容易确定催化金属前体溶液的蒸发压力。通过调整所述催化金属前体溶液的组成、凝固点等,也可以选择所述催化金属前体溶液的蒸发压力。
经过蒸发,除去在冻结的催化金属前体溶液中的溶剂。结果,催化金属前体成分在基材上形成为颗粒形式。注意到根据该方法形成的催化金属前体颗粒具有相对高的均匀性的颗粒尺寸,并均匀地分布在基材上。
接着,形成在基材上的催化金属前体颗粒还原为催化金属颗粒。例如,将催化金属前体颗粒还原为催化金属颗粒,可以按照如下的过程进行。首先,经过在氧化气氛下热处理,将催化金属前体转换成氧化物,然后在还原气氛下,热处理或等离子体处理所述氧化物,还原为金属。可以通过各种本领域已知的方法,进行还原催化金属前体的过程,因而,这里省略其详细描述。
图1为根据本发明的实施例制备的催化金属颗粒的电子显微镜照片。参考图1,催化金属颗粒均匀地分布在基材上,其颗粒尺寸相对均匀。
现在将更详细地描述根据本发明的实施方式的一种制造碳纳米管的方法。
制造碳纳米管的方法,包括:通过涂布催化金属前体溶液到基材上,在基材上形成催化剂颗粒,所述催化剂颗粒用于在其上面生长碳纳米管,冷冻干燥涂布到基材上的所述催化金属前体溶液,及还原所述冷冻干燥的催化金属前体为催化金属;及生长碳纳米管在所述催化剂颗粒上通过供应碳源到催化剂颗粒。
按照在形成催化剂颗粒的方法中所述的同样的方式,进行在基材上形成催化剂颗粒的过程。
通过供应碳源到催化剂颗粒,在所述催化剂颗粒上面生长碳纳米管的过程,可能采用用于碳纳米管的制备的各种方法进行。
例如,在所述催化剂颗粒上生长碳纳米管的过程,包括:将带有形成在其上的催化剂颗粒的基材放入到反应室中,所述催化剂颗粒用于在其上面生长碳纳米管;供应碳前体气体到所述反应室中;及分解在反应室中的所述碳前体气体,以供应碳到催化剂颗粒。
生长碳纳米管的过程可以通过下列方法进行:低压化学气相沉积、热化学气相沉积、PECVD或其组合。
碳前体气体的实例包括含碳的化合物,如乙炔、甲烷、丙烷、乙烯、一氧化碳、二氧化碳、醇及苯。
如果反应室的内部温度太低,那么所产生的碳纳米管的结晶性可能降低。如果反应室的内部温度太高,那么可能不形成碳纳米管。考虑到这点,反应室的内部温度一般可以为约450~1100℃。
在生长碳纳米管的过程中,其它条件一般可以为适于碳纳米管的生长的那些条件,本领域的技术人员容易根据具体的应用目的选择。因而,这里省略其它条件的详述。
因为在本实施方式的制造碳纳米管的方法中,碳纳米管生长在催化剂颗粒上,所述催化剂颗粒具有均匀的颗粒尺寸,并均匀地分布在基材上,所以所得的碳纳米管的均匀性也得到高度地改善。由碳纳米管的长度和直径的均匀性评价碳纳米管的均匀性。可以分别用电子显微镜和透射电子显微镜测量碳纳米管的长度和直径。
而且,由本实施方式的方法制得的碳纳米管的垂直定向特性非常好。这可以从图2的电子显微镜照片证实。图2为在本发明的实施例中制备的碳纳米管的侧视图的照片。参考图2,根据本实施方式的方法制备的碳纳米管垂直地定向,而不相互缠在一起。
图3为本发明的实施例中制备的碳纳米管的俯视图照片。参考图3,根据本实施方式的方法制备的碳纳米管的生产密度非常均匀。
实施例
利用乙醇和乙二醇作为溶剂,制得40mM乙酸亚铁溶液。将20mL的乙醇和20mL的乙二醇加入到0.1g的乙酸亚铁粉末,从而得到具有适当的粘度的溶液。将直径为20.32cm的硅基材浸渍在所得的溶液中。立即用液氮冷却所涂布的基材,然后转移到真空室中。接着,向该室中施加低于0.1mmHg的真空,以蒸发溶剂。为了使剩余溶剂的量最小化,还在100℃下加热所述基材。
在300℃下,热处理冷冻干燥的基材10分钟,以氧化乙酸亚铁。接着,在600℃下,用氢对基材进行还原处理。
结果,所述铁颗粒均匀地形成在基材上。图1为根据本实施例形成在硅基材上的铁颗粒的电子显微镜照片。参考图1,铁颗粒均匀地分布在基材上,其颗粒尺寸相对均匀。
将带有形成在其上的铁颗粒的基材放入反应室中,进行化学气相沉积(CVD),反应室的内部温度为600℃,然后将一氧化碳和氢气的混合气体(重量比1∶2)供应到所述反应室中20分钟,从而合成基于铁颗粒的碳纳米管。
图2为在本实施例中制备的碳纳米管的侧视图照片。从图2中显而易见,在本实施例中制备的碳纳米管垂直地定向,而不相互缠在一起。图3为在本实施例中制备的碳纳米管的俯视图照片。从图3中可以看出,在本实施例中制备的碳纳米管的生产密度非常均匀。
为了评价所形成的碳纳米管的均匀性,利用电子显微镜和透射电子显微镜,分别测量在等分为9个部分的基材的各个部分上的碳纳米管的长度和直径。结果,证实在等分为9个部分的基材上的碳纳米管具有在±5%以内的均匀度。
对比例
按照与上面的实施例相同的方式合成碳纳米管,所不同的是,涂布到基材上的乙酸亚铁溶液没有进行冷冻干燥,而是自然干燥。
图4为在对比例中制备的铁颗粒的光学显微照片。图5为图4的部分的放大图。从图4和5中可以看出,在对比例中制备的铁颗粒没有均匀性。
图6为在对比例中合成的碳纳米管簇的电子显微镜照片。参考图6,在对比例中合成的碳纳米管部分地集中在基材上,相互缠在一起,并且不垂直定向。
当通过冷冻干燥催化剂金属前体溶液,形成催化剂颗粒时,根据本发明的实施方式的形成催化剂颗粒的方法,可以使催化剂颗粒的结块和/或重结晶最小。通过本实施方式的方法形成的催化剂颗粒具有非常均匀的颗粒尺寸,并非常均匀地分布在基材上。
在根据本发明的另一个实施方式的制造碳纳米管的方法中,碳纳米管生长在催化剂颗粒上面,所述催化剂颗粒具有均匀的颗粒尺寸,并均匀地分布在基材上,因而,所合成的碳纳米管具有高度改善的均匀性。
尽管已经参考其示例性的实施方式具体地描述了本发明,本领域的普通技术人员将会理解其中可以进行各种形式和细节上的变化,而不脱离如所附的权利要求书所限定的本发明的精神和范围。

Claims (6)

1.一种用于生长碳纳米管的催化剂颗粒的制备方法,该方法包括:
涂布催化金属前体溶液到基材上;
冷冻干燥涂布到基材上的催化金属前体溶液;及
还原所述冷冻干燥的催化金属前体为催化金属。
2.根据权利要求1的方法,其中所述催化金属前体为有机金属化合物。
3.根据权利要求2的方法,其中所述催化金属前体为包含至少一种选自下列的金属元素的有机金属化合物:Fe、Co、Ni、Y、Mo、Cu、Pt、V和Ti。
4.根据权利要求1的方法,其中所述催化金属前体溶液的溶剂为:乙醇、乙二醇、聚乙二醇、聚乙烯醇或其混合物。
5.根据权利要求1的方法,其中所述催化金属前体在催化金属前体溶液中的浓度为10~200mM。
6.一种制造碳纳米管的方法,该方法包括:
将催化金属前体溶液涂布到基材上,以在基材上形成用于生长碳纳米管的催化剂颗粒,冷冻干燥涂布到基材上的催化金属前体溶液,及还原所述冷冻干燥的催化金属前体为催化金属;以及
将碳源提供给所述催化剂颗粒,以在催化剂颗粒上生长碳纳米管。
CNA2005100794134A 2004-06-22 2005-06-21 用于制造碳纳米管的催化剂的制备方法 Pending CN1883807A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101816956A (zh) * 2010-04-20 2010-09-01 武汉理工大学 一种提高纳米金属颗粒在石墨化碳载体表面分散的方法
CN101185904B (zh) * 2007-01-18 2011-01-19 江苏工业学院 一种选择性液相加氢的催化剂及其制备方法及用途

Families Citing this family (344)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8951632B2 (en) 2007-01-03 2015-02-10 Applied Nanostructured Solutions, Llc CNT-infused carbon fiber materials and process therefor
US20100279569A1 (en) * 2007-01-03 2010-11-04 Lockheed Martin Corporation Cnt-infused glass fiber materials and process therefor
US8951631B2 (en) * 2007-01-03 2015-02-10 Applied Nanostructured Solutions, Llc CNT-infused metal fiber materials and process therefor
US9005755B2 (en) 2007-01-03 2015-04-14 Applied Nanostructured Solutions, Llc CNS-infused carbon nanomaterials and process therefor
US8158217B2 (en) * 2007-01-03 2012-04-17 Applied Nanostructured Solutions, Llc CNT-infused fiber and method therefor
US20120189846A1 (en) * 2007-01-03 2012-07-26 Lockheed Martin Corporation Cnt-infused ceramic fiber materials and process therefor
KR101281168B1 (ko) 2007-01-05 2013-07-02 삼성전자주식회사 전계 방출 전극, 이의 제조 방법 및 이를 구비한 전계 방출소자
US8142619B2 (en) 2007-05-11 2012-03-27 Sdc Materials Inc. Shape of cone and air input annulus
US20090081383A1 (en) * 2007-09-20 2009-03-26 Lockheed Martin Corporation Carbon Nanotube Infused Composites via Plasma Processing
US20090081441A1 (en) * 2007-09-20 2009-03-26 Lockheed Martin Corporation Fiber Tow Comprising Carbon-Nanotube-Infused Fibers
US9309123B2 (en) 2007-09-21 2016-04-12 Taiyo Nippon Sanso Corporation Process for producing a carbon nanostructure
US8481449B1 (en) 2007-10-15 2013-07-09 SDCmaterials, Inc. Method and system for forming plug and play oxide catalysts
KR100905403B1 (ko) 2007-10-18 2009-06-30 한국지질자원연구원 저품위 철광석을 이용한 아세트산 철(ⅱ)의 제조방법
CN101447802A (zh) * 2007-11-27 2009-06-03 杰脉通信技术(上海)有限公司 一种捕获移动用户终端的方法
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
BRPI1007300A2 (pt) * 2009-02-17 2019-09-24 Applied Nanostructured Sols compósitos compreendendo nanotubos de carbono sobre fibra
BRPI1008131A2 (pt) * 2009-02-27 2016-03-08 Applied Nanostructured Sols "crescimento de nanotubo de carbono de baixa temperatura usando método de preaquecimento de gás".
US20100224129A1 (en) * 2009-03-03 2010-09-09 Lockheed Martin Corporation System and method for surface treatment and barrier coating of fibers for in situ cnt growth
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
CN102388172B (zh) * 2009-04-10 2015-02-11 应用纳米结构方案公司 使用立式加热炉将碳纳米管并入纤维的方法和设备
US20100272891A1 (en) * 2009-04-10 2010-10-28 Lockheed Martin Corporation Apparatus and method for the production of carbon nanotubes on a continuously moving substrate
DK2417286T3 (en) * 2009-04-10 2015-08-17 Applied Nanostructured Solutions Inc Device and method for producing carbon nanotubes on a substrate that moves continuously
US9111658B2 (en) 2009-04-24 2015-08-18 Applied Nanostructured Solutions, Llc CNS-shielded wires
WO2010124260A1 (en) * 2009-04-24 2010-10-28 Lockheed Martin Corporation Cnt-infused emi shielding composite and coating
KR101696207B1 (ko) * 2009-04-27 2017-01-13 어플라이드 나노스트럭처드 솔루션스, 엘엘씨. 복합 구조물 제빙을 위한 cnt계 저항 가열
BRPI1014624A2 (pt) * 2009-04-30 2016-04-05 Applied Nanostructured Sols método e sistema para catálise bem próxima para síntese de nanotubos de carbono
CN102470546B (zh) * 2009-08-03 2014-08-13 应用纳米结构方案公司 纳米颗粒在复合材料纤维中的结合
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
JP2011068509A (ja) * 2009-09-25 2011-04-07 Aisin Seiki Co Ltd カーボンナノチューブ複合体およびその製造方法
WO2011054008A2 (en) * 2009-11-02 2011-05-05 Applied Nanostructured Solutions, Llc Cnt-infused aramid fiber materials and process therefor
JP5643835B2 (ja) * 2009-11-23 2014-12-17 アプライド ナノストラクチャード ソリューションズ リミテッド ライアビリティー カンパニーApplied Nanostructuredsolutions, Llc Cntを適合された海ベース複合材料構造体
BR112012010907A2 (pt) * 2009-11-23 2019-09-24 Applied Nanostructured Sols "materiais compósitos de cerâmica contendo materiais de fibra infundidos em nanotubo de carbono e métodos para a produção dos mesmos"
US20110123735A1 (en) * 2009-11-23 2011-05-26 Applied Nanostructured Solutions, Llc Cnt-infused fibers in thermoset matrices
CA2780354A1 (en) * 2009-12-14 2011-11-17 Applied Nanostructured Solutions, Llc Flame-resistant composite materials and articles containing carbon nanotube-infused fiber materials
US9149797B2 (en) * 2009-12-15 2015-10-06 SDCmaterials, Inc. Catalyst production method and system
US9126191B2 (en) 2009-12-15 2015-09-08 SDCmaterials, Inc. Advanced catalysts for automotive applications
US8652992B2 (en) 2009-12-15 2014-02-18 SDCmaterials, Inc. Pinning and affixing nano-active material
US9119309B1 (en) 2009-12-15 2015-08-25 SDCmaterials, Inc. In situ oxide removal, dispersal and drying
US9167736B2 (en) * 2010-01-15 2015-10-20 Applied Nanostructured Solutions, Llc CNT-infused fiber as a self shielding wire for enhanced power transmission line
EP2531558B1 (en) * 2010-02-02 2018-08-22 Applied NanoStructured Solutions, LLC Carbon nanotube-infused fiber materials containing parallel-aligned carbon nanotubes, methods for production thereof, and composite materials derived therefrom
US8665581B2 (en) 2010-03-02 2014-03-04 Applied Nanostructured Solutions, Llc Spiral wound electrical devices containing carbon nanotube-infused electrode materials and methods and apparatuses for production thereof
WO2011109485A1 (en) * 2010-03-02 2011-09-09 Applied Nanostructured Solutions,Llc Electrical devices containing carbon nanotube-infused fibers and methods for production thereof
JP5571994B2 (ja) * 2010-03-30 2014-08-13 株式会社東芝 カーボンナノチューブ集合体、太陽電池、及び導波路及びカーボンナノチューブ集合体付き基板
US8780526B2 (en) 2010-06-15 2014-07-15 Applied Nanostructured Solutions, Llc Electrical devices containing carbon nanotube-infused fibers and methods for production thereof
US9017854B2 (en) 2010-08-30 2015-04-28 Applied Nanostructured Solutions, Llc Structural energy storage assemblies and methods for production thereof
US20120058352A1 (en) * 2010-09-02 2012-03-08 Applied Nanostructured Solutions, Llc Metal substrates having carbon nanotubes grown thereon and methods for production thereof
WO2012037042A1 (en) 2010-09-14 2012-03-22 Applied Nanostructured Solutions, Llc Glass substrates having carbon nanotubes grown thereon and methods for production thereof
AU2011305809A1 (en) 2010-09-22 2013-02-28 Applied Nanostructured Solutions, Llc Carbon fiber substrates having carbon nanotubes grown thereon and processes for production thereof
AU2011305751A1 (en) 2010-09-23 2012-06-21 Applied Nanostructured Solutions, Llc CNT-infused fiber as a self shielding wire for enhanced power transmission line
US8669202B2 (en) 2011-02-23 2014-03-11 SDCmaterials, Inc. Wet chemical and plasma methods of forming stable PtPd catalysts
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
JP2014524352A (ja) 2011-08-19 2014-09-22 エスディーシーマテリアルズ, インコーポレイテッド 触媒作用および触媒コンバータに使用するための被覆基材ならびにウォッシュコート組成物で基材を被覆する方法
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9085464B2 (en) 2012-03-07 2015-07-21 Applied Nanostructured Solutions, Llc Resistance measurement system and method of using the same
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US9511352B2 (en) 2012-11-21 2016-12-06 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
US9156025B2 (en) 2012-11-21 2015-10-13 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
JP2014136167A (ja) * 2013-01-15 2014-07-28 Toyota Motor Corp 触媒担持方法
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US9586179B2 (en) 2013-07-25 2017-03-07 SDCmaterials, Inc. Washcoats and coated substrates for catalytic converters and methods of making and using same
CA2926135A1 (en) 2013-10-22 2015-04-30 SDCmaterials, Inc. Compositions of lean nox trap
CN106061600A (zh) 2013-10-22 2016-10-26 Sdc材料公司 用于重型柴油机的催化剂设计
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US9687811B2 (en) 2014-03-21 2017-06-27 SDCmaterials, Inc. Compositions for passive NOx adsorption (PNA) systems and methods of making and using same
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10343920B2 (en) * 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR20180070971A (ko) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
JP7206265B2 (ja) 2017-11-27 2023-01-17 エーエスエム アイピー ホールディング ビー.ブイ. クリーン・ミニエンバイロメントを備える装置
TWI779134B (zh) 2017-11-27 2022-10-01 荷蘭商Asm智慧財產控股私人有限公司 用於儲存晶圓匣的儲存裝置及批爐總成
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Asm 智慧財產控股公司 沈積方法
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
KR102657269B1 (ko) 2018-02-14 2024-04-16 에이에스엠 아이피 홀딩 비.브이. 주기적 증착 공정에 의해 기판 상에 루테늄-함유 막을 증착하는 방법
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR20190128558A (ko) 2018-05-08 2019-11-18 에이에스엠 아이피 홀딩 비.브이. 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
KR20190129718A (ko) 2018-05-11 2019-11-20 에이에스엠 아이피 홀딩 비.브이. 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
TWI819010B (zh) 2018-06-27 2023-10-21 荷蘭商Asm Ip私人控股有限公司 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
TWI751420B (zh) 2018-06-29 2022-01-01 荷蘭商Asm知識產權私人控股有限公司 薄膜沉積方法
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR20200030162A (ko) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344A (zh) 2018-10-01 2020-04-07 Asm Ip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
KR102190543B1 (ko) * 2019-01-03 2020-12-14 한국해양대학교 산학협력단 탄소나노튜브의 대량 합성방법 및 이로부터 합성된 탄소나노튜브
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Asm 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
JP7509548B2 (ja) 2019-02-20 2024-07-02 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための周期的堆積方法および装置
JP2020133004A (ja) 2019-02-22 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材を処理するための基材処理装置および方法
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
KR20200108248A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR20200123380A (ko) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー.ブイ. ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー.ブイ. ウェハボートハンドリング装置、縦型バッチ炉および方法
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141002A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Asm Ip私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
TW202113936A (zh) 2019-07-29 2021-04-01 荷蘭商Asm Ip私人控股有限公司 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
KR20210018759A (ko) 2019-08-05 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 화학물질 공급원 용기를 위한 액체 레벨 센서
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー.ブイ. 成膜原料混合ガス生成装置及び成膜装置
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
CN112635282A (zh) 2019-10-08 2021-04-09 Asm Ip私人控股有限公司 具有连接板的基板处理装置、基板处理方法
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Asm Ip私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
US11450529B2 (en) 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP2021090042A (ja) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー.ブイ. 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN112992667A (zh) 2019-12-17 2021-06-18 Asm Ip私人控股有限公司 形成氮化钒层的方法和包括氮化钒层的结构
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
TW202140135A (zh) 2020-01-06 2021-11-01 荷蘭商Asm Ip私人控股有限公司 氣體供應總成以及閥板總成
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Asm Ip私人控股有限公司 形成包括釩或銦層的結構之方法
KR20210100010A (ko) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. 대형 물품의 투과율 측정을 위한 방법 및 장치
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
TW202146715A (zh) 2020-02-17 2021-12-16 荷蘭商Asm Ip私人控股有限公司 用於生長磷摻雜矽層之方法及其系統
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Asm Ip控股公司 專用於零件清潔的系統
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Asm Ip控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Asm Ip私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
TW202140831A (zh) 2020-04-24 2021-11-01 荷蘭商Asm Ip私人控股有限公司 形成含氮化釩層及包含該層的結構之方法
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Asm Ip私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202147383A (zh) 2020-05-19 2021-12-16 荷蘭商Asm Ip私人控股有限公司 基材處理設備
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
TW202200837A (zh) 2020-05-22 2022-01-01 荷蘭商Asm Ip私人控股有限公司 用於在基材上形成薄膜之反應系統
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Asm Ip私人控股有限公司 基板處理方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Asm Ip私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Asm Ip私人控股有限公司 基板處理方法
KR20220006455A (ko) 2020-07-08 2022-01-17 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
TW202219628A (zh) 2020-07-17 2022-05-16 荷蘭商Asm Ip私人控股有限公司 用於光微影之結構與方法
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Asm Ip私人控股有限公司 用於沉積鉬層之方法及系統
KR20220027026A (ko) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Asm Ip私人控股有限公司 於階梯式結構上沉積材料的方法
TW202217037A (zh) 2020-10-22 2022-05-01 荷蘭商Asm Ip私人控股有限公司 沉積釩金屬的方法、結構、裝置及沉積總成
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Asm Ip私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Asm Ip私人控股有限公司 填充間隙之方法與相關之系統及裝置
KR20220076343A (ko) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
CN114639631A (zh) 2020-12-16 2022-06-17 Asm Ip私人控股有限公司 跳动和摆动测量固定装置
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Asm Ip私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3049019B2 (ja) * 1998-09-11 2000-06-05 双葉電子工業株式会社 単層カーボンナノチューブの皮膜を形成する方法及びその方法により皮膜を形成された単層カーボンナノチューブ
US20030012722A1 (en) * 2002-07-02 2003-01-16 Jie Liu High yiel vapor phase deposition method for large scale sing walled carbon nanotube preparation

Cited By (3)

* Cited by examiner, † Cited by third party
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CN101185904B (zh) * 2007-01-18 2011-01-19 江苏工业学院 一种选择性液相加氢的催化剂及其制备方法及用途
CN101816956A (zh) * 2010-04-20 2010-09-01 武汉理工大学 一种提高纳米金属颗粒在石墨化碳载体表面分散的方法
CN101816956B (zh) * 2010-04-20 2011-10-19 武汉理工大学 一种提高纳米金属颗粒在石墨化碳载体表面分散的方法

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