CN1875127A - 涂覆氧化锆的钢带 - Google Patents
涂覆氧化锆的钢带 Download PDFInfo
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- CN1875127A CN1875127A CNA200480032257XA CN200480032257A CN1875127A CN 1875127 A CN1875127 A CN 1875127A CN A200480032257X A CNA200480032257X A CN A200480032257XA CN 200480032257 A CN200480032257 A CN 200480032257A CN 1875127 A CN1875127 A CN 1875127A
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- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 229910000831 Steel Inorganic materials 0.000 title claims abstract description 29
- 239000010959 steel Substances 0.000 title claims abstract description 29
- 238000000576 coating method Methods 0.000 claims abstract description 43
- 239000011248 coating agent Substances 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 37
- 239000011651 chromium Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 80
- 239000002184 metal Substances 0.000 claims description 80
- 238000000034 method Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000002955 isolation Methods 0.000 claims description 11
- 238000005096 rolling process Methods 0.000 claims description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 238000005240 physical vapour deposition Methods 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000007598 dipping method Methods 0.000 claims description 2
- 238000007749 high velocity oxygen fuel spraying Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims 2
- 238000001465 metallisation Methods 0.000 claims 1
- 238000007750 plasma spraying Methods 0.000 claims 1
- 238000007670 refining Methods 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 claims 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000000047 product Substances 0.000 description 21
- 238000005566 electron beam evaporation Methods 0.000 description 10
- 229910044991 metal oxide Inorganic materials 0.000 description 10
- 150000004706 metal oxides Chemical class 0.000 description 10
- 238000009413 insulation Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 229910000859 α-Fe Inorganic materials 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
- 239000003921 oil Substances 0.000 description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000005030 aluminium foil Substances 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000567 combustion gas Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000010339 dilation Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- -1 metal oxide compound Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
- H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
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Abstract
一种柔性金属带产品,包括铁素体铬钢带材(2),该带材具有由钇稳定的电绝缘的氧化锆层(3;6;8),所述涂层用于接收包括导电层的第二涂层(7)。该涂层作为柔性太阳能电池和固态薄膜电池中的电绝缘层非常高效,因为它实际上具有与钢材基底相同的热膨胀系数。
Description
技术领域
本发明涉及一种在卷式(roll-to-roll)连续生产过程中制造金属氧化物涂覆的钢带产品的方法,并且特别涉及一种适于制造薄膜设备的被涂覆的金属基底材料。这是根据权利要求1通过生产带有电绝缘氧化物层的金属带而实现的。
背景技术
有多种材料可用作基底材料并且被进一步研制用于生产薄膜柔性产品。使用柔性基底材料具有多个优点,其一是能够进行卷式连续生产过程,与间歇式过程相比,生产过程更加成本有效。而且,薄膜柔性产品具有多个技术优点,例如,它们可被折叠或者卷绕到紧凑包装中,并且可用于制造轻便型、空间和军事应用所需的轻质产品。用于薄膜柔性产品的一般材料例如包括塑料薄片如聚酰胺、金属带或薄片,例如不锈钢箔、钛箔、铜箔、钼箔、铝箔和镍箔,需要注意它们均需满足特定的标准。因此,基底材料应该是耐热的以便在薄膜产品生产中能够经受后续的加工步骤,并且这可包括在腐蚀性环境中进行高温热处理。然而,如果需要生产具有集成串联连接的组件,为生产薄膜柔性产品用作基底材料的所有导电金属带材料必须是电绝缘的。在现有技术中,导电金属带或薄片材料被涂覆氧化物例如氧化铝或氧化硅,它们是良好的电绝缘氧化物。然而,与下面的金属基底相比,在热膨胀方面,这些氧化物层通常具有很高的不匹配性。因此,关键的是基底材料的热膨胀系数(TEC)应该尽可能接近电绝缘金属氧化物层的TEC,以便避免绝缘金属氧化物层发生热裂化或者剥落。
热膨胀不匹配性(MTE)可以定义如下:(TECss-TECox)/TECss,其中TECss是金属带基底的热膨胀系数,并且TECox是金属氧化物层的热膨胀系数。
铁素体不锈钢和钇稳定的氧化锆(简称YSZ)是两种通常用于制造固态氧化物燃料电池的材料,因为这两种材料在其热膨胀方面具有极低的不匹配性。然而,在固态氧化物燃料电池中YSZ并非以薄涂层的形式而是以薄板的形式存在,其用作电解质。
通行的传统方案有:
将导电后触点直接沉积在金属带上;
将绝缘层例如氧化铝、氧化硅和氮化硅沉积在金属带上。
这两种方案均具有其各自的缺点。如果将导电后触点直接沉积在柔性金属带基底上,那么它将限制具有集成串联连接的组件的生产。而且,经常用作绝缘层的材料例如Al2O3、Si4N3、SiOx或SiO2相对于下面的金属带具有较大的TEC不匹配性,这将由于在后续加工步骤中的加热而导致形成裂纹和针孔。在表1中,列出一些绝缘材料和一些钢材的热膨胀系数。利用表1中给出的热膨胀系数值,能够计算金属带基底和绝缘涂层之间的热膨胀不匹配性(MTE)。在表2中给出一些钢材和所列绝缘材料之间的MTE。
因此本发明的主要目的在于提供一种涂覆氧化锆的金属带产品,其中氧化物层和金属带在热膨胀方面具有很低的不匹配性,所述产品适于做为生产薄膜柔性产品例如柔性Cu(In;Ga)Se2(简称CIGS)太阳能电池和固态薄膜电池的基底材料。
本发明的另一个目的在于提供一种用于薄膜产品的柔性基底,其廉价并且可在卷式连续生产过程中生产。
以意外的方式,通过形成具有根据权利要求1特征部分所述特征的具有涂层的金属带产品已经实现了这些和其它的目的。在从属权利要求中限定了其它的优选实施例。
发明内容
因此,通过在用作基底的金属带的顶面上施加连续的、均匀的、电绝缘的氧化锆薄层实现了上述的和其它的优点,所述氧化锆利用氧化钇稳定或者通常用于该目的的任何其它适当的金属氧化物进行稳定。氧化锆薄层的绝对成分可以是特制的,从而其热膨胀与所选择的金属带基底的热膨胀相匹配。该氧化锆薄层应该是光滑的和密实的以便避免形成任何针孔,否则当材料被进一步加工时针孔可用作导电通道。为了确保金属带基底安全的电绝缘性,可以沉积氧化锆多层(ML)。ML结构的优点在于能够阻断通过绝缘氧化物层的任何针孔或者导电通道。而且,例如与沉积在金属带上的阳极化氧化物层相比,通过在金属基底的顶面上沉积连续均匀的密实氧化锆薄层,易于控制氧化锆薄层的绝缘特性及其厚度。而且,与热生长氧化物层相比,氧化锆薄层对于基底的附着力更高。如果需要,氧化锆薄层可沉积在金属带材料的两侧上,以便完全避免被涂覆金属带在热处理期间由于任何微小的热膨胀差异而产生任何的卷曲。
而且,如果需要,随后可在所述氧化锆薄层的顶面上沉积金属层,这是用于获得后触点。如果最终产品为CIGS柔性薄膜太阳能电池,则该金属应该是钼。然而,如果最终产品是薄膜电池,则该金属后触点可以是铝或者铜。
附图说明
图1示出本发明第一实施例的截面示意图;
图2示出本发明第二实施例的截面示意图;
图3示出本发明第三实施例的截面示意图;
图4示出本发明第四实施例的截面示意图;
图5概略示出用于制造根据本发明的带有涂层的金属带材料的生产线。
具体实施方式
待涂覆的金属带
用于涂覆的金属带可以是关于氧化锆涂层具有低的热膨胀不匹配性的任何金属带材料,优选为不锈钢并且最优选为铁素体铬钢。这种基底钢材由普通的冶金钢生产,制造成具有至少10%b.w.,优选高于14%b.w.并且最优选在16-25%b.w.范围内的铬含量。可用基底钢材的一些例子为具有16%b.w.的铬含量ASTM430型钢,以及具有20%b.w.的铬含量和5.5%b.w.的铝含量的Sandvik 0C404型钢。铁素体钢带被热轧成中级尺寸,并且随后在多个步骤中进行冷轧,其中在所述轧制步骤中有多个再结晶步骤,直至实现最终厚度以及最大1000mm的宽度。另一个重要参数是金属带的表面粗糙度,金属带应该尽可能的光滑;小于0.2μm的Ra值是适当的,优选小于0.1μm。然后以适当的方式对基底材料的表面进行清洁以便去除所有来自轧制过程的残油。使用铁素体钢的主要原因在于其热膨胀系数(TEC)与所沉积的氧化锆涂层匹配得很好,但是满足该准则的其它钢型也是可用的。因此,期望在高达1000℃的温度范围中金属带基底和氧化锆涂层的热膨胀不匹配性低于±25%。而且,铁素体钢也具有很好的抗腐蚀性,以承受最终薄膜产品的工作环境。金属基底的物理形状是厚度在5到300μm、优选10到100μm范围内的金属带或者箔片。
绝缘氧化锆层
电绝缘氧化锆层应当牢固地附着在金属带上,以便保证薄膜产品具有尽可能高的柔度而不会出现氧化锆层剥落或产生裂纹的情形。这是通过在涂覆进行之前对金属带进行精细的预处理而实现的,这首先是以适当的方式对其进行清洁以去除所有残油等,残油可以影响涂覆过程的效率以及涂层的附着力和质量。然后利用串联离子辅助蚀刻工艺处理金属带,并且如果需要可在金属带和氧化锆层之间沉积薄的结合层。优选,该结合层应该主要由金属例如Ti、Zr、Ni或Cr构成,以提高氧化锆层到基底的附着力。而且,氧化锆层还应该是良好的电绝缘体以便避免在金属带和钼(或者Al或Cu)后触点之间形成任何电连接。这可通过沉积密实的和光滑的氧化锆层以实现较好的绝缘特性而实现,可以如此进行重复从而沉积多层结构。在多层结构中各氧化锆层的总数可以是10层或者更少,优选小于5层并且最好仅有两层。如上所述,多层氧化锆结构将阻断通过整个金属氧化物层的任何针孔或导电通道并且确保金属带具有良好的电绝缘性。各个氧化锆层的厚度可以在10nm和2μm之间,优选在0.1和1.5μm之间。整个氧化锆层的总厚度可达20μm,优选0.5到5μm。
氧化锆层的优选化学成分是利用Y2O3稳定的ZrO2,Y2O3在氧化锆中的百分比可以为0-25%b.w.,优选3-20%b.w.,或者最优选在5-15%b.w.,但是其它用以对其进行稳定的金属氧化物也是可行的(按化学计量的和不按化学计量的)。氧化锆还可例如利用Al氧化物进行稳定。
后触层的描述
需要时,可在绝缘氧化锆层的顶面上施加导电金属顶层。根据最终的薄膜产品,可以沉积不同的金属,包括铝、钼、镍、钴、铜、银、金和铂。该金属顶层应该是密实的并且牢固地粘附到下面的在前沉积的氧化物层上。该金属层的厚度应该在0.01-5.0μm之间。
涂覆方法的描述
可以使用很多种涂覆技术,只要它们提供连续匀质的和强附着力的涂层。这些技术例如喷涂、高速氧燃气喷涂(HVOF)、浸渍、物理气相沉积(PVD)、化学气相沉积(CVD)或者用于在铁素体钢的表面上施加含Zr混合物的流体凝胶或粉末的任何其它的已知技术,优选在例如WO 98/08986中公开的卷式电子束蒸发(EB)过程中采用PVD技术。如果需要,该PVD工艺还可以是利用等离子体活化的以便实现更好的绝缘氧化物层。还可能以精细的颗粒粉末的形式施加涂层。对于各个具体情形应该通过实验确定用于在表面上施加和形成氧化锆层的条件。涂覆过程将受到例如温度、干燥时间、加热时间、组分和特性以及铁素体钢和含Zr混合物等因素的影响。
有利的是,在传统的卷式金属带连续生产线上结合使用该涂覆方法。
有利实施方式
首先,利用普通的冶金钢生产基底材料,将其制成为具有上述化学成分。随后,它们被热轧成中级尺寸,并且随后在多个步骤中进行冷轧,其中在所述轧制步骤中有多个再结晶步骤,直至实现0.005-0.3mm的最终厚度以及宽达1000mm的宽度。然后以适当的方式对基底材料的表面进行清洁以便去除所有来自轧制过程的残油。
在图1中,示出涂覆有氧化锆的柔性铁素体钢1的典型截面,其一侧已被涂覆YSZ层3以生产薄膜产品。该基底材料2为柔性铁素体钢带,在0-1000℃的温度范围内对于氧化锆涂层具有低于±25%的热膨胀不匹配性。该铁素体钢带的表面粗糙度应该被保持的尽可能低。铁素体钢带的厚度应该在5-300μm、优选10-100μm的范围内,以便保证有良好的柔度。
在该铁素体钢带2的表面上,形成在卷式连续过程中沉积的电绝缘的、钇稳定的氧化锆层3。钇稳定的氧化锆层应该能够牢固地附着在金属带上,并且密实而且光滑。在此处,牢固附着被理解为指的是该涂层金属带能够在等于带厚的半径上被弯曲90°,且涂层不会呈现出发生剥落、裂开等现象的任何倾向。
在上述仅在一侧涂覆YSZ的柔性金属基底的另一形式中,该金属带的另一侧也被涂覆YSZ,以便生产在图2中示意的产品4。在图2中,该基底材料2在两侧均涂覆YSZ 3并且该两个YSZ层3应该具有相同的厚度,以便能够完全避免在后续加工步骤中该涂层金属带由于YSZ涂层而产生任何热变形。
根据本发明的再一个实施形式,如图3所示,金属带产品5包括涂覆有YSZ多层结构6的柔性金属带2。在该多层结构6中各氧化锆层的总数可以是10层或者更少,优选小于5层并且最好仅有两层。如上所述,多层氧化锆结构将阻断通过整个金属氧化物层的任何针孔或导电通道并且确保金属带具有良好的电绝缘性。各个氧化锆层的厚度可以在10nm和2μm之间,优选在0.1和1.5μm之间。整个氧化锆层的总厚度可达20μm,优选1到5μm。
为了形成导电后触点以用于薄膜产品的生产,如图4所示,在电绝缘的、涂覆YSZ(8)的铁素体钢带2的顶面上可以沉积金属层7。根据最终的薄膜产品,金属层7可以是不同的金属,包括铝、钼、镍、钴、铜、银、金和铂;优选的金属为铝、钼、银和/或铜,或者主要由钼构成的合金。该金属层7应该是密实的并且牢固地粘附到氧化锆涂层上以避免产生裂纹或者剥落。而且,该金属层7的厚度应该在0.1-5.0μm,优选0.2-2μm之间,并且最优选为大约0.5μm。
在图5示意出卷式电子束蒸发连续过程。该生产线的第一部分是真空腔室10中的开卷机9,然后是串联离子辅助蚀刻腔室11,随后是一系列的EB蒸发腔室12,EB蒸发腔室的所需数目可以从1到高达10个腔室变化,这是为了实现所期望的多层金属氧化物结构。所有的金属氧化物EB蒸发腔室12均配有EB枪13和用于蒸发的坩锅17。随后的腔室是单独的腔室15,用于对金属顶层的EB蒸发,该腔室也配有EB枪16和用于熔融金属的坩锅17。如果仅需生产金属氧化物涂覆的金属带,则无需该单独的用于金属顶层的EB蒸发腔室。在该腔室之后是用于被涂覆的金属带材料的出口真空腔室18和重卷机19,该重卷机设置在真空腔室18中。该真空腔室10和18还可分别被进口真空锁系统和出口真空锁系统替代。在后一情形中,开卷机9和重卷机19设置在开放大气中。
表1
材料 | 温度范围 | 热膨胀系数 |
Si3N4(α) | 25-1000K | 2.9×10-6K-1 |
Si3N4(β) | 25-1000K | 2.25×10-6K-1 |
Al2O3(多晶体) | 0-1027℃ | 8.12×10-6K-1 |
TiO2(多晶体) | 25-1000℃ | 8.83×10-6K-1 |
SiO2(玻璃质) | 25-1000℃ | 0.564×10-6K-1 |
YSZ | 25-1000℃ | 11×10-6K-1 |
Fe80Cr20 | 25-1000℃ | 13.5×10-6K-1 |
Fe70Cr30 | 25-1000℃ | 13.0×10-6K-1 |
Sandvik 0C44型 | 30-900℃ | 11.10×10-6K-1 |
ASTM 430 | 30-900℃ | 12.05×10-6K-1 |
St1.4016 | 25-1000℃ | 13.2×10-6K-1 |
St1.4742 | 25-1000℃ | 14.3×10-6K-1 |
St1.4749 | 25-1000℃ | 13.7×10-6K-1 |
表2
钢 | 绝缘层 | 测得的MTE(%) |
St1.4016 | SiO2 | 95.7% |
St1.4016 | Si3N4(α) | 78% |
St1.4016 | Al2O3 | 38% |
St1.4016 | TiO2 | 33% |
St1.4016 | YSZ | 16.7% |
Fe80Cr20 | SiO2 | 96% |
Fe80Cr20 | Si3N4(α) | 78.5% |
Fe80Cr20 | Al2O3 | 40% |
Fe80Cr20 | TiO2 | 35% |
Fe80Cr20 | YSZ | 19% |
0C44 | SiO2 | 95% |
OC44 | Si3N4(α) | 74% |
OC44 | Al2O4 | 27% |
OC44 | TiO2 | 20% |
0C44 | YSZ | 1% |
St1.4742 | SiO2 | 80% |
St1.4742 | Si3N4(α) | 96% |
St1.4742 | Al2O3 | 43% |
St1.4742 | TiO2 | 38% |
St1.4742 | YSZ | 23% |
Claims (15)
1.一种包括钢带材料(2)的具有涂层的金属带产品,其特征在于,所述钢带材料具有涂层(3;6;8),所述涂层包括至少一个与钢带直接接触的、或者与基本为金属的结合层直接接触的电绝缘的氧化锆层,其中该结合层又与钢带直接接触。
2.根据权利要求1所述的具有涂层的金属带产品,其特征在于,在高达1000℃的温度范围中,所述涂层和钢带材料的热膨胀不匹配性低于±25%,其中该热膨胀不匹配性(MTE)被定义为:
(TECss-TECox)/TECss,
其中,TECss是所述钢带材料的热膨胀系数,并且TECox是所述氧化锆涂层的热膨胀系数。
3.根据权利要求1所述的具有涂层的金属带产品,其特征在于,该钢带材料具有<0.2的表面粗糙度Ra。
4.根据权利要求1所述的具有涂层的金属带产品,其特征在于,该钢带材料具有5到300μm,优选10到100μm的厚度。
5.根据权利要求1所述的具有涂层的金属带产品,其特征在于,铁素体铬钢带材材料用作金属带材料。
6.根据权利要求5所述的具有涂层的金属带产品,其特征在于,所述铁素体铬钢带材材料具有至少10%b.w.,更适当的是至少14%b.w.并且优选在16-25%b.w.范围内的铬含量。
7.根据权利要求1所述的具有涂层的金属带产品,其特征在于,在金属带材料的任一侧上涂覆至少一个氧化锆层(3;6;8)。
8.根据权利要求1所述的具有涂层的金属带产品,其特征在于,在至少一个氧化锆层的顶面上沉积至少一个另外的氧化锆层,在下面的氧化锆层与钢带直接接触或者与金属结合层直接接触,其中该结合层又与钢带直接接触。
9.根据权利要求1所述的具有涂层的金属带产品,其特征在于,所述至少一个氧化锆层是稳定的氧化锆层,优选为钇稳定的氧化锆层(YSZ),其中Y2O3的百分比为所述层的0-25%b.w.,适当的为3-20%b.w.,优选为5-15%b.w.。
10.根据权利要求1所述的具有涂层的金属带产品,其特征在于,所述至少一个氧化锆层的厚度在0.1和20μm之间,优选在0.5和5μm之间
11.根据权利要求1所述的具有涂层的金属带产品,其特征在于,在氧化锆层和金属带材料之间沉积金属结合层,优选该金属结合层例如为Ti、Zr、Ni或Cr,以提高氧化锆层到基底的附着力。
12.根据前面任一权利要求所述的具有涂层的金属带产品,其特征在于,在电绝缘的且被稳定的氧化锆单层或多层的顶面上沉积导电金属层,该金属层优选由下面金属中的一种构成:铝、钼、镍、钴、铜、银、金和铂,更优选为铝、钼、银或铜。
13.根据权利要求12所述的具有涂层的金属带产品,其特征在于,该顶层金属层具有0.01和5μm之间的厚度。
14.根据权利要求12所述的具有涂层的金属带产品,其特征在于,利用任何已知的沉积技术沉积该电绝缘的单层或多层,包括各种喷涂技术,例如HVOF、等离子体喷涂,以及气相沉积技术,例如化学气相沉积(CVD)、物理气相沉积(PVD),浸渍技术,溶胶-凝胶技术,优选在卷式电子束(EB)蒸发过程中采用PVD技术。
15.用于生产柔性薄膜产品例如柔性Cu(In;Ga)Se2(CIGS)太阳能电池和固态薄膜电池的基底材料,其特征在于,其主要由根据前面任一权利要求所述的涂层产品构成。
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SE0303281A SE527179C2 (sv) | 2003-12-05 | 2003-12-05 | Tunnfilmssolcell eller tunnfilmsbatteri, innefattande en zirkoniumoxidbelagd bandprodukt av ferritiskt kromstål |
SE0303281-0 | 2003-12-05 | ||
PCT/SE2004/001810 WO2005054538A1 (en) | 2003-12-05 | 2004-12-03 | A steel strip coated with zirconia |
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EP (1) | EP1689905A1 (zh) |
JP (1) | JP5087742B2 (zh) |
KR (1) | KR101166407B1 (zh) |
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- 2004-12-03 CN CN200480032257XA patent/CN1875127B/zh not_active Expired - Fee Related
- 2004-12-03 US US10/577,549 patent/US7875360B2/en not_active Expired - Fee Related
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WO2005054538A8 (en) | 2005-07-28 |
CN1875127B (zh) | 2010-12-29 |
SE527179C2 (sv) | 2006-01-17 |
KR101166407B1 (ko) | 2012-07-23 |
JP5087742B2 (ja) | 2012-12-05 |
WO2005054538A1 (en) | 2005-06-16 |
SE0303281L (sv) | 2005-06-06 |
KR20060129212A (ko) | 2006-12-15 |
SE0303281D0 (sv) | 2003-12-05 |
EP1689905A1 (en) | 2006-08-16 |
US7875360B2 (en) | 2011-01-25 |
JP2007523997A (ja) | 2007-08-23 |
US20070218310A1 (en) | 2007-09-20 |
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