CN1871695B - 采用不同频率的rf功率调制的高纵横比蚀刻 - Google Patents

采用不同频率的rf功率调制的高纵横比蚀刻 Download PDF

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Publication number
CN1871695B
CN1871695B CN200480030884XA CN200480030884A CN1871695B CN 1871695 B CN1871695 B CN 1871695B CN 200480030884X A CN200480030884X A CN 200480030884XA CN 200480030884 A CN200480030884 A CN 200480030884A CN 1871695 B CN1871695 B CN 1871695B
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frequency
power
power value
source
etching
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Expired - Fee Related
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CN200480030884XA
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Chinese (zh)
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CN1871695A (zh
Inventor
C·鲁苏
R·德汉斯
E·A·赫德森
M·斯里尼瓦桑
L·李
F·克维切
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Lam Research Corp
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Lam Research Corp
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Priority claimed from US10/737,022 external-priority patent/US7144521B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
CN200480030884XA 2003-08-22 2004-08-06 采用不同频率的rf功率调制的高纵横比蚀刻 Expired - Fee Related CN1871695B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10/645,665 2003-08-22
US10/645,665 US7405521B2 (en) 2003-08-22 2003-08-22 Multiple frequency plasma processor method and apparatus
US10/737,022 2003-12-15
US10/737,022 US7144521B2 (en) 2003-08-22 2003-12-15 High aspect ratio etch using modulation of RF powers of various frequencies
PCT/US2004/025406 WO2005022623A1 (en) 2003-08-22 2004-08-06 High aspect ratio etch using modulation of rf powers of various frequencies

Publications (2)

Publication Number Publication Date
CN1871695A CN1871695A (zh) 2006-11-29
CN1871695B true CN1871695B (zh) 2010-12-29

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Family Applications (3)

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CN200480030884XA Expired - Fee Related CN1871695B (zh) 2003-08-22 2004-08-06 采用不同频率的rf功率调制的高纵横比蚀刻
CN2009101589474A Expired - Fee Related CN101656200B (zh) 2003-08-22 2004-08-20 多频等离子体刻蚀反应器
CNB2004800239430A Expired - Fee Related CN100511600C (zh) 2003-08-22 2004-08-20 多频等离子体刻蚀反应器

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN2009101589474A Expired - Fee Related CN101656200B (zh) 2003-08-22 2004-08-20 多频等离子体刻蚀反应器
CNB2004800239430A Expired - Fee Related CN100511600C (zh) 2003-08-22 2004-08-20 多频等离子体刻蚀反应器

Country Status (8)

Country Link
US (1) US7405521B2 (enExample)
EP (2) EP2533268B1 (enExample)
JP (2) JP5265871B2 (enExample)
KR (1) KR101322552B1 (enExample)
CN (3) CN1871695B (enExample)
SG (1) SG133600A1 (enExample)
TW (1) TWI390583B (enExample)
WO (1) WO2005020264A2 (enExample)

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CN101656200A (zh) 2010-02-24
CN101656200B (zh) 2012-06-13
KR101322552B1 (ko) 2013-10-25
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US7405521B2 (en) 2008-07-29
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