JP2014057057A - 増強プラズマ処理システム内でのプラズマ強化エッチング - Google Patents
増強プラズマ処理システム内でのプラズマ強化エッチング Download PDFInfo
- Publication number
- JP2014057057A JP2014057057A JP2013174444A JP2013174444A JP2014057057A JP 2014057057 A JP2014057057 A JP 2014057057A JP 2013174444 A JP2013174444 A JP 2013174444A JP 2013174444 A JP2013174444 A JP 2013174444A JP 2014057057 A JP2014057057 A JP 2014057057A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- primary
- feed gas
- generation region
- plasma generation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012545 processing Methods 0.000 title claims abstract description 47
- 238000005530 etching Methods 0.000 title claims abstract description 43
- 230000003190 augmentative effect Effects 0.000 title abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 92
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000013626 chemical specie Substances 0.000 claims abstract 4
- 239000007789 gas Substances 0.000 claims description 138
- 230000007935 neutral effect Effects 0.000 claims description 30
- 238000010494 dissociation reaction Methods 0.000 claims description 28
- 230000005593 dissociations Effects 0.000 claims description 28
- 230000007246 mechanism Effects 0.000 claims description 13
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- -1 O 2 Chemical compound 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 4
- 238000009832 plasma treatment Methods 0.000 claims 2
- 238000006115 defluorination reaction Methods 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 274
- 230000008569 process Effects 0.000 description 34
- 239000000470 constituent Substances 0.000 description 18
- 239000000203 mixture Substances 0.000 description 15
- 229920000642 polymer Polymers 0.000 description 14
- 150000003254 radicals Chemical class 0.000 description 14
- 238000006116 polymerization reaction Methods 0.000 description 13
- 150000002500 ions Chemical class 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 230000004907 flux Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000005457 optimization Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 239000006117 anti-reflective coating Substances 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 238000012549 training Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
【解決手段】一次プラズマ生成領域内で一次フィードガスから一次プラズマを生成する工程、さらに、二次プラズマ生成領域内で二次フィードガスから二次プラズマを生成して、二次プラズマ由来の少なくとも一部の化学種が一次プラズマ生成領域内に移動することを可能にする工程、さらに、一次プラズマが二次プラズマ由来の移動された化学種で増強された後に、一次プラズマで基板をエッチングする工程を備える誘電体エッチング方法。
【選択図】図1
Description
本願は、米国特許法第119条(e)の下、Eric A.Hudsonによって2012年8月27日に出願された本願の権利者が所有する米国仮特許出願第61/693,382号「Plasma−Enhanced Etching in an Augmented Plasma Processing System」の優先権を主張し、この仮出願は参照によってすべてが本明細書に組み込まれる。
基板を集積回路ダイに処理するために、長い間、プラズマ強化処理が利用されてきた。集積回路ダイは、様々な電子デバイスで用いる集積回路にさらに処理されうる。プラズマ強化処理は、例えば、プラズマ強化エッチング、プラズマ強化蒸着、プラズマ強化洗浄などを含む。
Claims (21)
- 一次プラズマ生成領域と、セミバリア構造によって前記一次プラズマ生成領域から分離された二次プラズマ生成領域とを少なくとも有するプラズマ処理チャンバ内で基板をエッチングするための方法であって、
一次フィードガスを前記一次プラズマ生成領域内に供給する工程と、
前記一次フィードガスとは異なる二次フィードガスを前記二次プラズマ生成領域内に供給する工程と、
前記一次フィードガスから一次プラズマを生成する工程と、
前記二次フィードガスから二次プラズマを生成する工程と、
前記一次プラズマと前記二次プラズマ由来の中性種とを少なくとも用いて前記基板をエッチングする工程であって、前記中性種は、前記セミバリア構造を越えて前記二次プラズマ生成領域から前記一次プラズマ生成領域に移動する、工程と、
を備える、方法。 - 請求項1の方法であって、
前記エッチングは誘電体エッチングである、方法。 - 請求項1の方法であって、
前記二次プラズマ生成領域内の圧力は前記一次プラズマ生成領域内の圧力より大きい、方法。 - 請求項1の方法であって、
前記二次フィードガスは非重合性ガスである、方法。 - 請求項1の方法であって、さらに、
前記二次フィードガスの解離に重点を置くように前記二次プラズマ生成領域のための入力パラメータを設定する工程を備え、
前記二次フィードガスはH2を含む、方法。 - 請求項5の方法であって、
前記一次フィードガスは、CF4、CxFy、および、CHxFyの内の少なくとも1つを含み、
xおよびyは整数値である、方法。 - 請求項1の方法であって、さらに、
前記二次フィードガスの解離に重点を置くように前記二次プラズマ生成領域のための入力パラメータを設定する工程を備え、
前記二次フィードガスは、O2、N2、および、NF3の内の少なくとも1つを含む、方法。 - 請求項7の方法であって、
前記一次フィードガスは、アルゴンおよびフルオロカーボン含有ガスの内の少なくとも1つを含む、方法。 - 請求項1の方法であって、さらに、
前記二次フィードガスの解離に重点を置くように前記二次プラズマ生成領域のための入力パラメータを設定する工程を備え、
前記二次フィードガスは、アルゴンおよびN2の内の少なくとも1つを含む、方法。 - 請求項9の方法であって、
前記一次フィードガスは、アルゴン、O2、および、フルオロカーボン含有ガスの内の少なくとも1つを含む、方法。 - 請求項1の方法であって、さらに、
前記二次フィードガスの解離に重点を置くように前記二次プラズマ生成領域のための入力パラメータを設定する工程を備え、
前記二次フィードガスはN2を含む、方法。 - 請求項9の方法であって、
前記一次フィードガスはCO2を含む、方法。 - 請求項1の方法であって、さらに、
前記二次フィードガスの解離に重点を置くように前記二次プラズマ生成領域のための入力パラメータを設定する工程を備え、
前記二次フィードガスはH2を含み、前記一次フォードガスはN2を含む、方法。 - 一次プラズマ生成領域と、セミバリア構造によって前記一次プラズマ生成領域から分離された二次プラズマ生成領域とを少なくとも有するプラズマ処理チャンバ内で基板をエッチングするための方法であって、
一次フィードガスを前記一次プラズマ生成領域内に供給する工程と、
前記一次フィードガスとは異なる二次フィードガスを前記二次プラズマ生成領域内に供給する工程と、
前記一次フィードガスから一次プラズマを生成する工程と、
前記二次フィードガスから二次プラズマを生成する工程と、
前記一次プラズマと前記二次プラズマ由来の中性種とを少なくとも用いて、前記基板をエッチングする工程であって、前記中性種は、前記バリア構造を越えて前記二次プラズマ生成領域から前記一次プラズマ生成領域に移動する、工程と、
その後、前記一次プラズマ生成領域への電源をオフにすることによって、前記一次プラズマの形成を抑制する工程と、
別の二次フィードガスを前記二次プラズマ生成領域内に供給して、別の二次プラズマを生成する工程と、
その後、前記別の二次プラズマからの化学種が前記バリア構造を越えて移動した後に、前記別の二次プラズマからの前記化学種を用いて前記基板にダウンストリームプラズマ処理を実行する工程と、
を備える、方法。 - 請求項14の方法であって、
前記エッチングは誘電体エッチングである、方法。 - 請求項15の方法であって、
前記別の二次フィードガスはH2を含む、方法。 - 請求項14の方法であって、さらに、
前記二次フィードガスおよび前記別の二次フィードガスの内の少なくとも一方の解離に重点を置くように前記二次プラズマ生成領域のための入力パラメータを設定する工程を備える、方法。 - 請求項14に記載の方法であって、
前記ダウンストリームプラズマ処理は脱フッ素化である、方法。 - 一次プラズマ生成領域と、セミバリア構造によって前記一次プラズマ生成領域から分離された二次プラズマ生成領域とを少なくとも有するプラズマ処理チャンバ内で基板をエッチングするための方法であって、
一次フィードガスを前記一次プラズマ生成領域内に供給する工程と、
前記一次フィードガスとは異なる二次フィードガスを前記二次プラズマ生成領域内に供給する工程と、
容量結合メカニズムを用いて、前記一次フィードガスから一次プラズマを生成する工程と、
前記二次フィードガスから二次プラズマを生成する工程と、
前記一次プラズマと前記二次プラズマ由来の中性種とを少なくとも用いて前記基板をエッチングする工程であって、前記中性種は、前記セミバリア構造を越えて前記二次プラズマ生成領域から前記一次プラズマ生成領域に移動する、工程と、
を備える、方法。 - 請求項19の方法であって、
前記二次プラズマを生成する工程は、容量結合メカニズムを用いる、方法。 - 請求項19の方法であって、
前記セミバリア構造は、1組の穴を備え、前記1組の穴に含まれる各穴は、前記各穴の中でのプラズマの形成を阻害するよう構成された高アスペクト比を有する、方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261693382P | 2012-08-27 | 2012-08-27 | |
US61/693,382 | 2012-08-27 | ||
US13/626,793 US9039911B2 (en) | 2012-08-27 | 2012-09-25 | Plasma-enhanced etching in an augmented plasma processing system |
US13/626,793 | 2012-09-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014057057A true JP2014057057A (ja) | 2014-03-27 |
JP2014057057A5 JP2014057057A5 (ja) | 2016-10-13 |
Family
ID=50147080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013174444A Pending JP2014057057A (ja) | 2012-08-27 | 2013-08-26 | 増強プラズマ処理システム内でのプラズマ強化エッチング |
Country Status (6)
Country | Link |
---|---|
US (2) | US9039911B2 (ja) |
JP (1) | JP2014057057A (ja) |
KR (1) | KR102280914B1 (ja) |
CN (2) | CN107424900A (ja) |
SG (2) | SG10201601331PA (ja) |
TW (2) | TWI578408B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021530102A (ja) * | 2018-06-25 | 2021-11-04 | マトソン テクノロジー インコーポレイテッドMattson Technology, Inc. | エッチング後の脱フッ素化プロセス |
Families Citing this family (85)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9793126B2 (en) | 2010-08-04 | 2017-10-17 | Lam Research Corporation | Ion to neutral control for wafer processing with dual plasma source reactor |
US9039911B2 (en) * | 2012-08-27 | 2015-05-26 | Lam Research Corporation | Plasma-enhanced etching in an augmented plasma processing system |
US9083182B2 (en) | 2011-11-21 | 2015-07-14 | Lam Research Corporation | Bypass capacitors for high voltage bias power in the mid frequency RF range |
US9263240B2 (en) * | 2011-11-22 | 2016-02-16 | Lam Research Corporation | Dual zone temperature control of upper electrodes |
US9396908B2 (en) | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
WO2013078098A1 (en) * | 2011-11-23 | 2013-05-30 | Lam Research Corporation | Multi zone gas injection upper electrode system |
CN104011838B (zh) | 2011-11-24 | 2016-10-05 | 朗姆研究公司 | 具有柔性对称的rf返回带的等离子体处理室 |
KR101495288B1 (ko) * | 2012-06-04 | 2015-02-24 | 피에스케이 주식회사 | 기판 처리 장치 및 방법 |
US10283615B2 (en) | 2012-07-02 | 2019-05-07 | Novellus Systems, Inc. | Ultrahigh selective polysilicon etch with high throughput |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US9165783B2 (en) * | 2012-11-01 | 2015-10-20 | Applied Materials, Inc. | Method of patterning a low-k dielectric film |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9230819B2 (en) | 2013-04-05 | 2016-01-05 | Lam Research Corporation | Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing |
US9245761B2 (en) | 2013-04-05 | 2016-01-26 | Lam Research Corporation | Internal plasma grid for semiconductor fabrication |
US9017526B2 (en) | 2013-07-08 | 2015-04-28 | Lam Research Corporation | Ion beam etching system |
US9147581B2 (en) | 2013-07-11 | 2015-09-29 | Lam Research Corporation | Dual chamber plasma etcher with ion accelerator |
US10800092B1 (en) | 2013-12-18 | 2020-10-13 | Surfx Technologies Llc | Low temperature atmospheric pressure plasma for cleaning and activating metals |
US10032609B1 (en) * | 2013-12-18 | 2018-07-24 | Surfx Technologies Llc | Low temperature atmospheric pressure plasma applications |
US9558928B2 (en) * | 2014-08-29 | 2017-01-31 | Lam Research Corporation | Contact clean in high-aspect ratio structures |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US9449796B2 (en) | 2014-10-24 | 2016-09-20 | Applied Materials, Inc. | Plasma processing system including a symmetrical remote plasma source for minimal ion energy |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9922840B2 (en) * | 2015-07-07 | 2018-03-20 | Applied Materials, Inc. | Adjustable remote dissociation |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9349605B1 (en) * | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10032604B2 (en) | 2015-09-25 | 2018-07-24 | Applied Materials, Inc. | Remote plasma and electron beam generation system for a plasma reactor |
US10504746B2 (en) | 2016-04-12 | 2019-12-10 | Applied Materials, Inc. | HKMG integration |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
KR20190038945A (ko) | 2016-08-29 | 2019-04-09 | 도쿄엘렉트론가부시키가이샤 | 실리콘 질화물의 준원자 층 에칭 방법 |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
JP6764771B2 (ja) * | 2016-11-28 | 2020-10-07 | 東京エレクトロン株式会社 | 基板処理装置及び遮熱板 |
US11694911B2 (en) * | 2016-12-20 | 2023-07-04 | Lam Research Corporation | Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
WO2018156975A1 (en) | 2017-02-23 | 2018-08-30 | Tokyo Electron Limited | Method of quasi-atomic layer etching of silicon nitride |
KR102537742B1 (ko) | 2017-02-23 | 2023-05-26 | 도쿄엘렉트론가부시키가이샤 | 자가 정렬 블록 구조물들의 제조를 위한 실리콘 질화물 맨드렐의 이방성 추출 방법 |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
TWI766433B (zh) | 2018-02-28 | 2022-06-01 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
CN110783187B (zh) * | 2018-07-25 | 2024-04-19 | 东京毅力科创株式会社 | 等离子体处理方法和等离子体处理装置 |
KR20200015264A (ko) | 2018-08-03 | 2020-02-12 | 삼성전자주식회사 | 웨이퍼 접합 방법 및 웨이퍼 접합 시스템 |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
JP2020149859A (ja) * | 2019-03-13 | 2020-09-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP6963097B2 (ja) * | 2019-04-22 | 2021-11-05 | 株式会社日立ハイテク | プラズマ処理方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002503031A (ja) * | 1998-02-09 | 2002-01-29 | アプライド マテリアルズ インコーポレイテッド | 種密度を個別制御するプラズマアシスト処理チャンバ |
US20020179248A1 (en) * | 2000-12-22 | 2002-12-05 | Alex Kabansky | Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow |
JP2003533878A (ja) * | 2000-05-19 | 2003-11-11 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | プラズマエッチング装置 |
JP2010512031A (ja) * | 2006-12-05 | 2010-04-15 | アプライド マテリアルズ インコーポレイテッド | チャンバ中央のガス分配プレート、同調型プラズマ流制御グリッド及び電極 |
Family Cites Families (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4600464A (en) | 1985-05-01 | 1986-07-15 | International Business Machines Corporation | Plasma etching reactor with reduced plasma potential |
JP2604684B2 (ja) | 1994-02-22 | 1997-04-30 | 木下 治久 | プラズマプロセス装置 |
JP3360461B2 (ja) | 1995-01-31 | 2002-12-24 | ソニー株式会社 | メタル成膜工程の前処理方法 |
US6007673A (en) | 1996-10-02 | 1999-12-28 | Matsushita Electronics Corporation | Apparatus and method of producing an electronic device |
JP3317209B2 (ja) | 1997-08-12 | 2002-08-26 | 東京エレクトロンエイ・ティー株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP3364675B2 (ja) | 1997-09-30 | 2003-01-08 | 東京エレクトロンエイ・ティー株式会社 | プラズマ処理装置 |
JP2001274143A (ja) | 2000-03-28 | 2001-10-05 | Tdk Corp | ドライエッチング方法、微細加工方法及びドライエッチング用マスク |
JP4371543B2 (ja) | 2000-06-29 | 2009-11-25 | 日本電気株式会社 | リモートプラズマcvd装置及び膜形成方法 |
WO2002014810A2 (en) | 2000-08-10 | 2002-02-21 | Tokyo Electron Limited | Method and apparatus for tuning a plasma reactor chamber |
US7430984B2 (en) * | 2000-08-11 | 2008-10-07 | Applied Materials, Inc. | Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements |
US6949450B2 (en) * | 2000-12-06 | 2005-09-27 | Novellus Systems, Inc. | Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber |
US6962644B2 (en) * | 2002-03-18 | 2005-11-08 | Applied Materials, Inc. | Tandem etch chamber plasma processing system |
CA2489984A1 (en) | 2002-06-21 | 2003-12-31 | Transform Pharmaceuticals, Inc. | Pharmaceutical compositions with improved dissolution |
US7976673B2 (en) | 2003-05-06 | 2011-07-12 | Lam Research Corporation | RF pulsing of a narrow gap capacitively coupled reactor |
JP4111274B2 (ja) | 2003-07-24 | 2008-07-02 | キヤノンアネルバ株式会社 | 磁性材料のドライエッチング方法 |
US7838430B2 (en) | 2003-10-28 | 2010-11-23 | Applied Materials, Inc. | Plasma control using dual cathode frequency mixing |
US7695590B2 (en) | 2004-03-26 | 2010-04-13 | Applied Materials, Inc. | Chemical vapor deposition plasma reactor having plural ion shower grids |
US20050211171A1 (en) | 2004-03-26 | 2005-09-29 | Applied Materials, Inc. | Chemical vapor deposition plasma reactor having an ion shower grid |
US20050211547A1 (en) | 2004-03-26 | 2005-09-29 | Applied Materials, Inc. | Reactive sputter deposition plasma reactor and process using plural ion shower grids |
US7291360B2 (en) | 2004-03-26 | 2007-11-06 | Applied Materials, Inc. | Chemical vapor deposition plasma process using plural ion shower grids |
US20050211546A1 (en) | 2004-03-26 | 2005-09-29 | Applied Materials, Inc. | Reactive sputter deposition plasma process using an ion shower grid |
US7244474B2 (en) | 2004-03-26 | 2007-07-17 | Applied Materials, Inc. | Chemical vapor deposition plasma process using an ion shower grid |
JP2006013190A (ja) * | 2004-06-28 | 2006-01-12 | Rohm Co Ltd | 半導体装置の製造方法 |
US20060000802A1 (en) | 2004-06-30 | 2006-01-05 | Ajay Kumar | Method and apparatus for photomask plasma etching |
US8349128B2 (en) * | 2004-06-30 | 2013-01-08 | Applied Materials, Inc. | Method and apparatus for stable plasma processing |
US8058156B2 (en) | 2004-07-20 | 2011-11-15 | Applied Materials, Inc. | Plasma immersion ion implantation reactor having multiple ion shower grids |
US7767561B2 (en) | 2004-07-20 | 2010-08-03 | Applied Materials, Inc. | Plasma immersion ion implantation reactor having an ion shower grid |
US7381291B2 (en) | 2004-07-29 | 2008-06-03 | Asm Japan K.K. | Dual-chamber plasma processing apparatus |
US7138067B2 (en) * | 2004-09-27 | 2006-11-21 | Lam Research Corporation | Methods and apparatus for tuning a set of plasma processing steps |
US7396431B2 (en) * | 2004-09-30 | 2008-07-08 | Tokyo Electron Limited | Plasma processing system for treating a substrate |
KR100663351B1 (ko) | 2004-11-12 | 2007-01-02 | 삼성전자주식회사 | 플라즈마 처리장치 |
US8356575B2 (en) | 2005-09-09 | 2013-01-22 | Ulvac, Inc. | Ion source and plasma processing apparatus |
KR100653073B1 (ko) | 2005-09-28 | 2006-12-01 | 삼성전자주식회사 | 기판처리장치와 기판처리방법 |
US7358484B2 (en) * | 2005-09-29 | 2008-04-15 | Tokyo Electron Limited | Hyperthermal neutral beam source and method of operating |
US7645357B2 (en) | 2006-04-24 | 2010-01-12 | Applied Materials, Inc. | Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency |
US7520999B2 (en) | 2006-05-03 | 2009-04-21 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor with dynamic adjustment of the plasma source power applicator and the workpiece relative to one another |
US7998307B2 (en) * | 2006-09-12 | 2011-08-16 | Tokyo Electron Limited | Electron beam enhanced surface wave plasma source |
US7909961B2 (en) | 2006-10-30 | 2011-03-22 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
US7611936B2 (en) | 2007-05-11 | 2009-11-03 | Freescale Semiconductor, Inc. | Method to control uniformity/composition of metal electrodes, silicides on topography and devices using this method |
US20090084501A1 (en) * | 2007-09-27 | 2009-04-02 | Tokyo Electron Limited | Processing system for producing a negative ion plasma |
US8460567B2 (en) | 2008-07-01 | 2013-06-11 | Tokyo Electron Limited | Method and system for etching a MEM device |
US8986558B2 (en) | 2008-09-01 | 2015-03-24 | Japan Science And Technology Agency | Plasma etching method, plasma etching device, and method for producing photonic crystal |
US8475673B2 (en) | 2009-04-24 | 2013-07-02 | Lam Research Company | Method and apparatus for high aspect ratio dielectric etch |
US8749053B2 (en) | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
US20120104274A1 (en) | 2009-07-16 | 2012-05-03 | Canon Anelva Corporation | Ion beam generating apparatus, substrate processing apparatus and method of manufacturing electronic device |
US20110177694A1 (en) * | 2010-01-15 | 2011-07-21 | Tokyo Electron Limited | Switchable Neutral Beam Source |
EP2814051A1 (en) | 2010-02-09 | 2014-12-17 | Intevac, Inc. | Shadow mask implantation system |
US20130059448A1 (en) | 2011-09-07 | 2013-03-07 | Lam Research Corporation | Pulsed Plasma Chamber in Dual Chamber Configuration |
US9793126B2 (en) | 2010-08-04 | 2017-10-17 | Lam Research Corporation | Ion to neutral control for wafer processing with dual plasma source reactor |
US9184028B2 (en) | 2010-08-04 | 2015-11-10 | Lam Research Corporation | Dual plasma volume processing apparatus for neutral/ion flux control |
US8869742B2 (en) | 2010-08-04 | 2014-10-28 | Lam Research Corporation | Plasma processing chamber with dual axial gas injection and exhaust |
US20120097330A1 (en) * | 2010-10-20 | 2012-04-26 | Applied Materials, Inc. | Dual delivery chamber design |
US9490106B2 (en) | 2011-04-28 | 2016-11-08 | Lam Research Corporation | Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil |
WO2012173699A1 (en) | 2011-06-15 | 2012-12-20 | Applied Materials, Inc. | Methods and apparatus for performing multiple photoresist layer development and etching processes |
US9039911B2 (en) | 2012-08-27 | 2015-05-26 | Lam Research Corporation | Plasma-enhanced etching in an augmented plasma processing system |
TWI525698B (zh) | 2011-10-31 | 2016-03-11 | Canon Anelva Corp | 磁性膜之離子束蝕刻方法及離子束蝕刻裝置 |
US20130168352A1 (en) | 2011-12-28 | 2013-07-04 | Andreas Fischer | Methods and apparatuses for controlling plasma properties by controlling conductance between sub-chambers of a plasma processing chamber |
US9245761B2 (en) | 2013-04-05 | 2016-01-26 | Lam Research Corporation | Internal plasma grid for semiconductor fabrication |
US9230819B2 (en) | 2013-04-05 | 2016-01-05 | Lam Research Corporation | Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing |
US9017526B2 (en) | 2013-07-08 | 2015-04-28 | Lam Research Corporation | Ion beam etching system |
US9147581B2 (en) | 2013-07-11 | 2015-09-29 | Lam Research Corporation | Dual chamber plasma etcher with ion accelerator |
-
2012
- 2012-09-25 US US13/626,793 patent/US9039911B2/en active Active
-
2013
- 2013-08-26 JP JP2013174444A patent/JP2014057057A/ja active Pending
- 2013-08-27 TW TW102130651A patent/TWI578408B/zh active
- 2013-08-27 CN CN201710574814.XA patent/CN107424900A/zh active Pending
- 2013-08-27 SG SG10201601331PA patent/SG10201601331PA/en unknown
- 2013-08-27 TW TW105142615A patent/TWI621186B/zh active
- 2013-08-27 KR KR1020130102027A patent/KR102280914B1/ko active IP Right Grant
- 2013-08-27 CN CN201310379780.0A patent/CN103632954B/zh active Active
- 2013-08-27 SG SG2013065065A patent/SG2013065065A/en unknown
-
2015
- 2015-04-01 US US14/676,711 patent/US9418859B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002503031A (ja) * | 1998-02-09 | 2002-01-29 | アプライド マテリアルズ インコーポレイテッド | 種密度を個別制御するプラズマアシスト処理チャンバ |
JP2003533878A (ja) * | 2000-05-19 | 2003-11-11 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | プラズマエッチング装置 |
US20020179248A1 (en) * | 2000-12-22 | 2002-12-05 | Alex Kabansky | Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow |
JP2010512031A (ja) * | 2006-12-05 | 2010-04-15 | アプライド マテリアルズ インコーポレイテッド | チャンバ中央のガス分配プレート、同調型プラズマ流制御グリッド及び電極 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021530102A (ja) * | 2018-06-25 | 2021-11-04 | マトソン テクノロジー インコーポレイテッドMattson Technology, Inc. | エッチング後の脱フッ素化プロセス |
Also Published As
Publication number | Publication date |
---|---|
SG10201601331PA (en) | 2016-03-30 |
US9418859B2 (en) | 2016-08-16 |
US20150206775A1 (en) | 2015-07-23 |
US20140054269A1 (en) | 2014-02-27 |
TW201711110A (zh) | 2017-03-16 |
KR102280914B1 (ko) | 2021-07-23 |
TW201415560A (zh) | 2014-04-16 |
SG2013065065A (en) | 2014-03-28 |
KR20140027895A (ko) | 2014-03-07 |
TWI621186B (zh) | 2018-04-11 |
CN103632954B (zh) | 2017-08-11 |
CN107424900A (zh) | 2017-12-01 |
US9039911B2 (en) | 2015-05-26 |
TWI578408B (zh) | 2017-04-11 |
CN103632954A (zh) | 2014-03-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9418859B2 (en) | Plasma-enhanced etching in an augmented plasma processing system | |
US11670486B2 (en) | Pulsed plasma chamber in dual chamber configuration | |
US10483127B2 (en) | Methods for high precision plasma etching of substrates | |
US8323521B2 (en) | Plasma generation controlled by gravity-induced gas-diffusion separation (GIGDS) techniques | |
US8877080B2 (en) | Using vacuum ultra-violet (VUV) data in microwave sources | |
KR101223819B1 (ko) | 플라즈마 에칭 방법 및 플라즈마 에칭 장치 | |
US20160358784A1 (en) | Plasma-enhanced etching in an augmented plasma processing system | |
KR20170000340A (ko) | 에칭 방법 | |
KR101679371B1 (ko) | 드라이 에칭 방법 | |
KR20150104043A (ko) | 플라즈마 에칭 방법 및 플라즈마 에칭 장치 | |
US9418863B2 (en) | Method for etching etching target layer | |
WO2009070562A1 (en) | Plasma control using dual cathode frequency mixing | |
KR20150038172A (ko) | 플라즈마를 이용한 객체 처리 장치 | |
US20220165546A1 (en) | Plasma etch tool for high aspect ratio etching | |
KR20230129345A (ko) | 플라즈마 처리 장치 및 에칭 방법 | |
CN109075068B (zh) | 蚀刻方法 | |
KR20190098922A (ko) | 플라즈마 에칭 방법 및 플라즈마 에칭 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160825 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160825 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170607 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170613 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170908 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20180206 |