CN1861840B - 催化剂增强化学气相沉积设备 - Google Patents
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Abstract
本发明提供了一种催化剂增强化学气相沉积(CECVD)设备，在该CECVD设备中，喷头和催化剂支撑体相互独立。该CECVD设备具有在喷头、催化剂丝和基底之间的良好的间隔，并可被净化以防止在低温下运行的部分上形成的污染。该CECVD设备包括：反应室；喷头，用于将反应气体引入到反应室中；催化剂丝，用于分解反应气体；催化剂支撑体，用于支撑催化剂丝；基底，已分解的气体沉积在其上；基底支撑体，用于支撑基底。
Description
本申请要求于2005年5月11日在韩国知识产权局提交的第2005-0039535号韩国专利申请的利益，其全部内容通过引用包含于此。
技术领域
本发明涉及一种催化剂增强化学气相沉积(CECVD)设备，更具体地讲，涉及一种具有简化结构的CECVD设备，该简化结构包括相互独立的喷头和催化剂支撑体。该CECVD设备具有在喷头、催化剂丝(catalyst wire)和基底之间的良好的间隔，并防止在低温下运行的部分上形成的污染。
背景技术
在制造半导体器件、显示装置等中，化学气相沉积(CVD)方法被广泛地用来在基底上形成薄膜。CVD方法包括等离子体增强化学气相沉积(PECVD)、热化学气相沉积，等等。等离子体增强化学气相沉积(PECVD)通过沉积和/或活化等离体中的源气体来形成膜。热化学气相沉积通过加热基底从而引发化学反应来形成膜。
另一种CVD方法是“加热元件CVD”(heating element CVD)，该方法通过采用保持在高温的加热元件沉积和/或活化源气体来形成膜。加热元件CVD设备包括：真空室，源气体被引入到其中；加热元件，包括具有高熔点的金属，如钨等，加热元件保持在大约1,000℃至大约2,000℃的高温。源气体引入之后，当其经过加热元件的表面时被分解或被活化。然后，分解的或活化的源气体到达基底，在基底的表面上沉积薄膜。采用丝状加热元件的热丝CVD(hot wire CVD)是加热元件CVD方法的一个例子。另一种加热元件CVD方法是催化剂增强化学气相沉积(CECVD)，在该CECVD方法中，加热元件经历催化反应以分解或活化源气体。
在CECVD中，当源气体经过催化剂的表面时被分解或被活化，从而有利地降低基底的温度。对比地，热化学气相沉积仅利用基底的热量来引发化学反应。此外，与PECVD不同，CECVD不使用等离子体，从而防止由等离子体引起的对基底的损害。因此，CECVD被期望作为一种用于具有改进的集成、性能和精细间距的下一代半导体装置、显示装置等的膜生长的方法。
图1是示出根据现有技术的CECVD设备的示意图。如图1所示，CECVD设备包括室1，室1具有侧壁，真空泵(未示出)通过排出管2连接到侧壁。真空泵可抽吸室1至例如大约1×10-6Pa的压力。此外，室1连接到气体供应管3，气体供应管3向室1供应用于生长薄膜的反应气体。用于生长多晶硅层的基底S通过真空进片(loadlock chamber)装载到室1内的基底支撑体4上。基底支撑体4可以是涂覆有SiC的石墨基座(graphite susceptor)，并被位于室1外部的加热器6加热。催化剂丝8位于气体供应管3的端部的喷头7和基底支撑体4之间。热电偶9附于基底支撑体4，用于测量基底S的温度。
图2是图1中示出的CECVD设备的剖视图，该CECVD设备包括催化剂丝、催化剂支撑体、基底支撑体和喷头.如图2所示，根据现有技术的CECVD设备包括与气体供应管3连通的喷头7，并包括面向室1内部的多个注射孔72.催化剂丝8邻近喷头7并被催化剂支撑体84支撑.此外，气管82向催化剂丝8供应气体.
在这样的CECVD设备中，催化剂丝8邻近喷头7，并不能防止在低温下运行的催化剂丝8的部分上形成的污染。除了用于供应反应气体的气体供应管3外，还设置了用于向催化剂丝8供应气体的气管82，从而使喷头7的构造复杂化。该构造使得难以维护喷头7和在室1中均匀地供应反应气体。
此外，该构造使得调节喷头7和基底S之间的距离D、喷头7和催化剂丝8之间的距离d1、催化剂丝8和基底之间S的距离d2非常困难。距离D、d1、d2是重要的并易于更改以调节反应气体的引入、分解、化合和排放。因此，为了改进室内的反应，调节这些距离是重要的。
发明内容
在本发明的实施例中，催化剂增强化学气相沉积(CECVD)设备具有简化结构，在该简化结构中，喷头和催化剂丝相互独立。该CECVD设备保持喷头、催化剂丝和基底之间的良好的距离，并防止在低温下运行的部分的污染。
根据本实施例的CECVD设备包括：反应室；喷头，用于将反应气体引入到反应室中；催化剂丝，用于分解通过喷头引入的气体；催化剂支撑体，用于支撑催化剂丝；基底，通过催化剂丝分解的气体沉积在其上；基底支撑体，用于支撑基底。
在发明的实施例中，催化剂支撑体包括用于向催化剂丝供应气体的气体供应管和用于在反应前净化反应室内部的净化气体供应管。
基底支撑体和喷头之间的距离是可调节的。催化剂支撑体和催化剂丝的距离、催化剂支撑体和喷头之间的距离以及催化剂支撑体和基底支撑体之间的距离均是可调节的。
催化剂支撑体包括用于供应气体的供应单元和安装在供应单元中的支撑单元。该构造允许催化剂支撑体在支撑催化剂丝的同时具有可变的长度。供应单元和支撑单元之间的结合处可设置在基底支撑体之下。此外，供应单元和支撑单元可以以任何合适的方法相互结合，使得支撑单元具有可变的长度。例如，供应单元和支撑单元可螺纹连接在一起，采用一个或更多的销紧固，或通过气压固定在一起。
在发明的实施例中，通过喷头引入的反应气体包括单一气体或包含硅的混合气体。包含硅的合适的反应气体的非限制性例子包括SiH4和SiH4/H2。
根据发明的另一实施例，供应给催化剂丝的气体包含氢。包含氢的合适的气体的非限制性例子包括H2、H2/NH3、NH3和H2/SiH4。
附图说明
通过结合附图进行下面的描述，本发明的这些和其它特点及优点将会变得更加清楚，在附图中：
图1是示出根据现有技术的催化剂增强化学气相沉积(CECVD)设备的示意图；
图2是图1的现有技术CECVD设备的剖视图；
图3是根据本发明实施例的CECVD设备的剖视图；
图4A是根据本发明实施例的催化剂支撑体的支撑单元到供应单元的连接处的剖视图；
图4B是根据本发明另一实施例的催化剂支撑体的支撑单元到供应单元的连接处的剖视图；
图4C是根据本发明又一实施例的催化剂支撑体的支撑单元到供应单元的连接处的剖视图；
图5是示出根据本发明实施例的在CECVD设备中的气体流动的示意图。
具体实施方式
现在将参照附图对本发明的示例性实施例进行描述。然而，为说明性的目的描述这些实施例，本领域的普通技术人员理解可对描述的实施例作出更改。
图3是根据本发明实施例的催化剂增强化学气相沉积(CECVD)设备的剖视图。CECVD设备包括催化剂丝、催化剂支撑体、基底支撑体和喷头。
CECVD设备包括：反应室801；喷头807，用于将反应气体引入到反应室801内；催化剂丝808，用于分解通过喷头807引入的气体；催化剂支撑体800，用于支撑催化剂丝808；基底S1，已分解的气体沉积在其上；基底支撑体804，用于支撑基底S1。
在反应室801中，喷头807与气体供应管803连通以将气体引入到反应室801内。通过气体供应管803供应的气体通过注射孔872被注射到喷头807中。然后注射气体通过催化剂丝808被分解，催化剂丝808与喷头807隔开距离d3。然后已分解的气体沉积在基底S1上，基底S1与催化剂丝808隔开距离d4。
催化剂支撑体800支撑催化剂丝808并包括用于向催化剂丝808供应气体的气体供应管850。气体供应管850经由反应室801延伸并与用于支撑催化剂丝808的固定体810连通。
此外，催化剂支撑体800包括用于在反应发生前净化反应室801内部的净化气体供应管840。与气体供应管850相同，净化气体供应管840经由反应室801延伸并通过催化剂支撑体800与反应室801的内部连通。
基底支撑体804被提供在反应室801的内部并支撑基底S1。基底支撑体804和喷头807通过可调节的距离D1分开。距离D1可通过任何在真空系统中合适的方法来调节。例如，距离D1可通过移动连接到基底支撑体804的支撑轴841来调节。
此外，催化剂丝808和喷头807之间距离d3以及催化剂丝808和基底S1之间的距离d4也是可调节的。基底S1和催化剂丝808之间的距离d4可如上所述地来调节。
催化剂丝808和喷头807之间的距离d3通过催化剂支撑体800来调节。催化剂支撑体800包括用于供应气体的供应单元830和安装在供应单元830中的支撑单元820。该构造提供了当支撑催化剂丝808时具有可变长度的催化剂支撑体800。在本实施例中，支撑单元820和供应单元830之间的结合处890位于基底支撑体804之下。
支撑单元820和供应单元830可通过任何合适的方法结合在一起。例如，如图4A所示，支撑单元820和供应单元830螺纹连接在一起。可选地，如图4B所示，支撑单元820和供应单元830通过一个或更多的销固定在一起。在另一实施例中，如图4C所示，支撑单元820和供应单元830通过气压固定在一起。用于结合支撑单元820和供应单元830的这些方法的每一种方法允许催化剂支撑体800具有可变的长度。
参照图4A，支撑单元820和供应单元830可螺纹连接在一起。在本实施例中，支撑单元820是中空的并具有带螺纹部分824。供应单元830也是中空的并具有适合于容纳支撑单元820的带螺纹部分824的带螺纹部分834。支撑单元820的带螺纹部分824被供应单元830的带螺纹部分834容纳，使得催化剂支撑体800具有期望的长度。
参照图4B，支撑单元820和供应单元830可通过一个或更多的销固定在一起。在本实施例中，支撑单元820是中空的并具有多个紧固槽825。供应单元830也是中空的并具有多个紧固孔835。支撑单元820中的紧固槽825和供应单元830中的紧固孔835相互对准，紧固销837通过相应的供应单元830中的紧固孔835被插入到紧固槽825中的一个中，使得催化剂支撑体800具有期望的长度。
参照图4C，支撑单元820和供应单元830可通过气压固定在一起。在本实施例中，支撑单元820分别具有第一同轴孔826a和第二同轴孔826b，其各分别适合于容纳供应单元830的第一壁834a和第二壁834b中的一个。相似地，供应单元830分别具有第一同轴孔837a和第二同轴孔837b，其各分别适合于容纳支撑单元820的第一壁827a和第二壁827b中的一个。供应单元830的第一同轴孔837a容纳支撑单元820的第一壁827a。支撑单元820的第一同轴孔826a容纳供应单元830的第一壁834a。相似地，供应单元830的第二同轴孔837b容纳支撑单元820的第二壁827b，支撑单元820的第二同轴孔826b容纳供应单元830的第二壁834b。此外，供应单元830的第二同轴孔837b在该孔的底部具有气孔838。气压通过气孔838被施加给支撑单元820。因为在反应期间反应气可泄漏，所以同样的气体被用于反应和气压。供应单元830的第二孔837b也可包括气体排出孔(未示出)，在第二孔837b内的气压变得过大的情况下，该气体排出孔用于从第二孔837b排出气体。该气体排出孔使供应单元830的第二孔837b保持恒压，并将催化剂支撑体保持在期望的长度。气压可通过任何合适的方法引入，例如通过电磁阀等。
在根据本发明实施例的CECVD设备中，Si薄膜沉积在基底S1上。图5是示出根据本实施例的在CECVD设备中的反应期间的气体流动的示意图。
如图5所示，基底S1和喷头807之间的距离D1、喷头807和催化剂丝808之间的距离d3以及催化剂丝808和基底S1之间的距离d4通过移动支撑轴841和支撑单元820来调节。距离D1表示直接从喷头807到基底S1而不经过催化剂丝808的反应气体的流动。距离d3表示从喷头807到催化剂丝808的反应气体的流动。距离d4表示从催化剂丝808到基底S1的分解反应气体的流动。距离D1、d3和d4的每一个是反应中重要的因素。特别地，距离d4影响已分解气体的再结合、已分解气体的动能，当已分解气体到达基底S1时，使得d4成为距离D1、d3和d4中最重要的距离。当距离d4太短时，基底S1可被损坏，或者由于催化剂丝808的热量引起沉积在在反应期间被加热的基底S1上的薄膜可分离。因此，调节距离D1、d3和d4，并利用适当的真空，改进反应。
调节距离D1、d3和d4之后，真空抽吸系统802抽吸反应室801以产生真空.然后通过净化气体供应管840引入净化气体(参见图5中的“F1”).将反应室801净化之后，包含硅基的气体通过喷头807被注射(参见图5中的“F2”)以在基底S1上沉积Si薄膜.然后包含氢基的气体通过气体供应管850被注射到催化剂丝808(参见图5中的“F3”).因为热量从被加热的催化剂丝808向未被加热的固定体810传递，所以热损失发生在催化剂丝808和固定器810的连接处.因此，随着催化剂丝808的温度降低，污染形成在催化剂丝808上.然而，根据本发明的一个实施例，气体被注射到催化剂丝808(参见图5中的“F3”)，使得防止在催化剂丝808上形成的污染.
虽然气体可从催化剂支撑体800的支撑单元820和供应单元830之间的接合处890泄漏(参见图5中的“F4”)，但是由该泄漏导致的气体的流动比从喷头807到基底S1的反应气体的流动(参见图5中的“F2”)小得多。另外，泄漏的气体在基底S1和基底支撑体804的下方流动，因此对反应具有很小的影响。
为在基底S1上沉积Si薄膜，通过喷头807引入的气体包含硅基。该气体可以是单一气体或气体的混合物。合适的气体的非限制性例子包括SiH4、SiH4/H2等。
此外，供应给催化剂丝808的气体包含氢基。合适的具有氢基的气体的非限制性例子包括H2、H2/NH3、NH3、H2/SiH4等。
如上所述，本发明的CECVD设备具有简化结构，在该简化结构中，喷头和催化剂丝相互独立。该设备具有喷头、催化剂丝和基底之间的良好的间隔，且该设备可被净化以防止在低温下运行的部分上形成的污染。
仅为说明性的目的已经描述了本发明的实施例。本领域技术人员会理解，在不脱离如权利要求公开的本发明的精神和范围的情况下，可作出各种变更、添加和替换。
Claims (11)
1.一种催化剂增强化学气相沉积设备，所述设备包括：
反应室；
喷头，用于将反应气体引入到所述反应室中；
催化剂丝，用于分解所述反应气体；
催化剂支撑体，用于支撑所述催化剂丝；
基底，用于接收通过所述催化剂丝分解的气体；
基底支撑体，用于支撑所述基底，
其中，所述催化剂支撑体包括用于供应气体的供应单元和适合于安装在所述供应单元中的支撑单元，所述供应单元和所述支撑单元螺纹连接在一起，或者通过一个或更多的销固定在一起，或者通过气压固定在一起，使得所述催化剂支撑体的长度是可调节的。
2.如权利要求1所述的催化剂增强化学气相沉积设备，其中，所述催化剂支撑体包括用于向所述催化剂丝供应气体的气体供应管。
3.如权利要求2所述的催化剂增强化学气相沉积设备，其中，所述催化剂支撑体还包括用于净化所述反应室的净化气体供应管。
4.如权利要求1所述的催化剂增强化学气相沉积设备，其中，所述基底支撑体和所述喷头之间的距离是可调节的。
5.如权利要求1所述的催化剂增强化学气相沉积设备，其中，所述催化剂丝和所述基底支撑体之间的距离是可调节的。
6.如权利要求1所述的催化剂增强化学气相沉积设备，其中，所述催化剂丝和所述喷头之间的距离是可调节的。
7.如权利要求1所述的催化剂增强化学气相沉积设备，其中，所述供应单元和所述支撑单元之间的接合处位于所述基底支撑体之下。
8.如权利要求1所述的催化剂增强化学气相沉积设备，其中，通过所述喷头引入的所述反应气体包括包含硅的气体。
9.如权利要求8所述的催化剂增强化学气相沉积设备，其中，所述反应气体从由SiH4和SiH4/H2组成的组中选择。
10.如权利要求8所述的催化剂增强化学气相沉积设备，其中，供应给所述催化剂丝的气体包含氢。
11.如权利要求10所述的催化剂增强化学气相沉积设备，其中，所述包含氢的气体从由H2、H2/NH3、NH3和H2/SiH4组成的组中选择。
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Also Published As
| Publication number | Publication date |
|---|---|
| CN1861840A (zh) | 2006-11-15 |
| US7942968B2 (en) | 2011-05-17 |
| US20060254514A1 (en) | 2006-11-16 |
| JP2006319301A (ja) | 2006-11-24 |
| KR100688836B1 (ko) | 2007-03-02 |
| JP4580323B2 (ja) | 2010-11-10 |
| KR20060117592A (ko) | 2006-11-17 |
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