CN1849703A - 高k金属氧化物的原子层沉积 - Google Patents
高k金属氧化物的原子层沉积 Download PDFInfo
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- CN1849703A CN1849703A CNA038257998A CN03825799A CN1849703A CN 1849703 A CN1849703 A CN 1849703A CN A038257998 A CNA038257998 A CN A038257998A CN 03825799 A CN03825799 A CN 03825799A CN 1849703 A CN1849703 A CN 1849703A
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- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 32
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 32
- 238000000231 atomic layer deposition Methods 0.000 title abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 28
- -1 alkyl amide Chemical class 0.000 claims abstract description 25
- 239000002243 precursor Substances 0.000 claims abstract description 13
- 229910000449 hafnium oxide Inorganic materials 0.000 claims abstract description 12
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims abstract description 10
- 150000002739 metals Chemical class 0.000 claims abstract description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 11
- 239000003990 capacitor Substances 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 6
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000376 reactant Substances 0.000 abstract description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 33
- 238000005516 engineering process Methods 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000010410 layer Substances 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 7
- 239000007800 oxidant agent Substances 0.000 description 7
- 230000001590 oxidative effect Effects 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 238000011109 contamination Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- BGGIUGXMWNKMCP-UHFFFAOYSA-N 2-methylpropan-2-olate;zirconium(4+) Chemical compound CC(C)(C)O[Zr](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C BGGIUGXMWNKMCP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 238000005576 amination reaction Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- NPEOKFBCHNGLJD-UHFFFAOYSA-N ethyl(methyl)azanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C NPEOKFBCHNGLJD-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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Abstract
本发明涉及包含4族金属的金属氧化物的高k电介质层的原子层沉积(“ALD”),所述金属氧化物包括氧化铪、氧化锆和氧化钛。更具体而言,本发明涉及将金属烷基酰胺用作金属有机前体并且将臭氧作为共反应剂的4族金属氧化物膜的ALD形成。
Description
本申请要求于2002年8月18日提交的题为“Atomic layer Deposition ofHigh-k Metal Oxides for Gate and Capacitor Dielectrics”的美国临时专利申请No.60/404372的优先权,其全部内容在此引入作为参考。
技术领域
本发明涉及用于栅极和/或电容应用的包含4族金属(4族是新的周期表符号,其对应于先前的IUPAC形式中的IVA族以及CAS版本中的IVB族)的金属氧化物的高k电介质膜的原子层沉积(“ALD”),所述金属氧化物包括氧化铪(HfO2)、氧化锆(ZrO2)和氧化钛(TiO2)。更具体而言,本发明涉及使用金属烷基酰胺(metal alkyl amide)和臭氧的4族金属氧化物膜的ALD形成。
背景技术
计算机的速度和功能每年都在加倍,这部分地得益于缩小集成电路的尺寸。目前,现代电路中的最小尺寸是栅极绝缘体的厚度,其将控制电极(“栅电极”)与硅中的受控电流隔离。传统上,栅极绝缘体由二氧化硅(SiO2)和/或氮化硅(SiN)制成。目前这样的绝缘体薄至20。然而,随着厚度降低到20以下,常规的栅极电介质遭受漏电以及可靠性的不足。
因此,正在进行努力以寻找可替换的绝缘体。目前,努力大部分集中在高介电常数(高“k”)材料上。正如此处所使用的,如果材料的介电常数“k”高于氧化硅的介电常数(k=3.9),则该材料为“高k”。
已研究的高k电介质包括4族金属氧化物,如二氧化铪(HfO2)(k~20-25)和二氧化锆(ZrO2)(k~20-25)。通常,这些材料表现出高的电容率、良好的热稳定性以及对于硅的大的能带偏移。然而,与Vt(阈值电压)不稳定性相关的电荷俘获以及MOSFET性能中的电子迁移率的降低至关重要。由于集成电路器件规模接近65nm点,对于代替二氧化硅的改进的高k栅极电介质的需要迅速增长。实际上,对于关于CMOS集成的高k电介质的需要与国际半导体技术蓝图(International Technology Roadmap forSemiconductor)中的一致。
此外,现有技术的沉积技术如化学气相沉积(CVD),越来越不能满足高级薄膜的需要。尽管能够改进CVD工艺使其提供具有改善的台阶覆盖度的保形的膜,但是CVD工艺常常需要高的处理温度,导致了高杂质浓度的引入,并且具有较差的前体或反应物利用效率。例如,制造高k栅极电介质的障碍之一是CVD工艺期间界面氧化硅层的形成。另一障碍是在硅衬底上沉积高k栅极电介质的超薄膜时现有技术CVD工艺的限制。
因此,正在进行努力从而开发以纯的形式(pure form)沉积材料的改进的方法,所述纯的形式具有一致的化学计量、厚度、保形的覆盖度、突变的界面、光滑的表面以及减小的晶粒边界、裂纹和针孔。ALD是将要开展的最新的方法。在ALD中,通过交替的脉冲和清除(purge),将前体和共反应剂分别提供到生长膜的表面,从而在每一脉冲周期产生膜生长的单一的单层(single mono-layer)。通过脉冲周期的总数来控制层的厚度。相对于CVD,ALD具有几个优点。ALD可以在与朝更低温的工业趋势相适应的较低的温度下进行并且可以制造出保形的薄膜层。更为有利的是,ALD可以将膜厚度控制在原子级别,并且可以用于“纳米工程(nano-engineer)”复合薄膜。因此,强烈需要ALD的进一步发展。
已经报道了使用四叔丁醇锆(zirconium tetra-t-butoxide)的氧化锆的ALD形成。见美国No.6465371(“Lim”)。此外,已经报道了使用四(二甲基胺化物)铪(“TDMAHf”)和四(乙基甲基胺化物)铪(“Hf-TEMA”)的氧化铪的ALD形成。分别见R.Gordon等人的“Vapor Deposition Of Metal Oxide AndSilicates:Possible Gate Insulators For Future Microelectronics”,Chem.Mater.,2001,pp.2463-2464以及K.Kukil等人的“Atomic Layer Deposition of HafniumDioxide Films From Hafnium Tetrakis(ethylmethylamide)And Water”,Chem.Vap.Deposition,2002,Vol.8,No.5,pp.199-204。然而,这些参考文献都没有讲授优选使用金属烷基酰胺作为金属有机前体并结合臭氧作为氧化剂。
发明内容
本发明提供了用于形成包括氧化铪(HfO2)、氧化锆(ZrO2)和氧化钛(TiO2)的高k4族金属氧化物膜的ALD工艺,以取代在栅极和/或电容电介质应用中的二氧化硅。最优选的金属氧化物是氧化铪。氧化铪表现出极佳的热稳定性,由此导致极少的界面二氧化硅生长。
所述方法需要原子层沉积工艺,其中金属烷基酰胺和臭氧的分离的脉冲被引入到包括衬底的反应室中,从而在所述衬底上生长金属氧化物膜。重复所述方法直至获得目标厚度的膜。
更具体而言,所述方法需要以下脉冲周期:第一,将金属烷基酰胺脉冲到反应室中;第二,从反应室清除未反应的金属烷基酰胺和副产物;第三,将臭氧气体脉冲到反应室中;第四并且是最后,从反应室中清除未反应的臭氧以及副产物。可选择地,首先脉冲并清除臭氧,之后脉冲并清除金属烷基酰胺,按需要重复脉冲周期多次直至获得目标膜厚度。
与例如蒸汽的常规氧化剂相反,通过在ALD工艺中使用臭氧,可以显著减小所得金属氧化物膜中的固定电荷和俘获电荷。此外,与例如氧气的常规氧化剂相反,通过在ALD工艺中使用臭氧,显著降低了用于ALD工艺的所需的操作温度。
与其他前体、如烷基金属和金属醇盐相比,在ALD工艺中使用金属烷基酰胺作为金属有机前体显著降低了所得膜中的碳污染。这对于金属烷基酰胺尤为正确,其中烷基酰胺配体是乙基甲基酰胺配体。
根据本发明制造的高k金属氧化物膜用作栅极和电容中的电介质。当用作栅极电介质时,高k电介质膜形成在一条或多条n或p掺杂沟道之间的衬底上,该衬底通常为硅晶片。然后,在所述电介质上方形成诸如N或P掺杂多晶硅电极的电极,以完成栅极。当用作电容电介质时,高k电介质膜形成在两个导电极板之间。
附图说明
将参照以下附图详细描述本发明,其中:
图1是概括本发明的ALD脉冲周期的流程图;以及
图2是示出根据本发明制造的高k电介质膜在栅极中的使用。
具体实施方式
本发明提供了用于形成高k4族金属氧化物膜的ALD工艺,以取代在栅极和/或电容电介质应用中的二氧化硅。这样的金属氧化物包括氧化铪(HfO2)、氧化锆(ZrO2)和氧化钛(TiO2)。最优选的金属氧化物是氧化铪。
在开始脉冲周期之前,常常通过位于反应室一端的阀门将通常为硅晶片的衬底放置到反应室中。优选地,使用氟化氢清洁硅晶片以去除天然二氧化硅。
所述衬底位于可加热的晶片支持物上,该支持物支撑衬底并将其加热到预期的反应温度。一旦适当地放置好衬底,则能够开始脉冲周期。
通常,在脉冲周期中的第一脉冲之前,将晶片加热到约100℃至约500℃的温度,优选约200℃至约400℃。在整个工艺期间保持这一温度。
通常,在脉冲周期中的第一脉冲之前,使反应室达到约0.1至5Torr的压力,优选约0.1至2Torr。并且在整个工艺期间也保持这一压力。
脉冲周期在图1中示出。该脉冲周期包括以下步骤:
第一,易挥发的液态金属烷基酰胺作为气体被挥发并脉冲到反应室中。金属烷基酰胺被化学吸附到衬底的表面上。通常,优选以约0.1至约5秒的周期并且以约0.1至约1100标准立方厘米每分钟(“sccm”)的流速引入金属烷基酰胺。可以结合惰性载体气体,如氩、氮或氦气来引入金属烷基酰胺。可选择地,可以以纯的形式引入金属烷基酰胺。
合适的金属烷基酰胺包括与下式相符的化合物:
M(NR1R2)n
其中“M”是包括铪、锆和钛的4族金属,其中“R1”和“R2”独立地选自取代或未取代的直链、支链和环状的烷基的组,并且“n”为4。优选地,“R1”和“R2”各自为C1-C6烷基,如甲基和乙基,因为这些配体减少了所得膜中的碳污染。更优选地,配体“NR3R4”是乙基甲基酰胺。具有乙基甲基酰胺配体的金属烷基酰胺的使用,在金属氧化物膜中产生了最少的碳污染。例如,Hf-TEMA比极相近的化合物、如四甲基酰胺铪和四乙基酰胺铪产生更少的碳污染,并且比不相关的化合物、如四叔丁醇铪产生更少的碳污染。
第二,使用例如非活性清除气体或者真空清除,从反应室中清除未反应的金属有机前体和副产物。非活性清除气体包括氩、氮和氦气。以通常在约0.1至约5秒范围内的周期并且以通常在约0.1至约1100sccm范围内的流速将清除气体脉冲到反应室中。
第三,以通常在约0.1至约5秒范围内的周期并且以通常在约0.1至约1100sccm范围内的流速将臭氧气体脉冲到反应室中。可以与如氩、氮或氦气的惰性气体一起引入臭氧。可选择地,可以以纯的形式添加臭氧。然而,“纯”不意味着没有氧气存在。氧气是对于臭氧的前体并且在臭氧中通常作为污染物而保留到一定程度。已确信的是臭氧用作金属有机前体单层中的配体并且提供与金属基团结合以形成金属氧化物的反应氧。
与诸如氧气和蒸汽的常规氧化剂相反,通过在ALD工艺中使用臭氧,减少了所得金属氧化物膜中的固定电荷和俘获电荷。此外,降低了所需的操作温度。传统上,氧气和蒸汽已是用于ALD工艺的优选氧化剂,而臭氧已被认知为氧化剂但是由于其相对高的不稳定性使其并不受到偏爱。然而,已经发现,臭氧实际上是通过ALD形成金属氧化物膜的优选氧化剂。氧气需要约400℃或更高的操作温度,而臭氧允许低于300℃的操作温度。蒸汽引起所得膜中的羟基污染,而臭氧产生没有这种污染的膜。
第四并且是最后,从反应室中清除未反应的臭氧和副产物。该第二清除步骤通常以和第一清除步骤相同的方式进行。
这样完成了ALD工艺的一个周期。最终结果是在衬底上形成一个4族金属氧化物膜的单层。然后按照需要重复该脉冲周期多次以获得预期的膜厚度。该一层接一层的ALD生长在较大衬底区域上提供了的极佳的覆盖度并且提供了极佳的台阶覆盖度。
根据本发明形成的优选的4族金属氧化物膜包括氧化铪(HfO2)、氧化锆(ZrO2)和氧化钛(TiO2)膜。最优选的金属氧化物膜是氧化铪。氧化铪表现出优良的热稳定性,因此,导致更少的界面二氧化硅生长。
通过脉冲Hf-TEMA,然后通过清除,再通过脉冲臭氧,然后通过第二次清除,将氧化铪单层优选在硅衬底上形成。在这种情况下,由更高的压力、更高的前体脉冲时间(更低的流速)、更高的晶片温度以及更低的臭氧脉冲时间而导致更高的沉积速率。由更低的工艺压力和更低的晶片温度而导致更好的均匀度。使用较短的清除时间形成了更少的不需要的粒子。
优选在250-300℃的晶片温度范围内、0.5Torr的工艺压力下以及70℃的源罐(source canister)温度下完成使用Hf-TEMA前体的氧化铪沉积。优选地,包括晶片的反应室被预加压并且被预加热120秒的时间。然后执行以下的脉冲周期:第一,以230sccm的流速将氩中的前体脉冲到反应室中持续2.5秒;第二,以1040sccm的脉冲速率(pulse rate)将氩脉冲到反应室中持续1秒;第三,以350sccm的流速将180g/m3浓度的臭氧脉冲到反应室中持续2秒;第四以及最后,以1050sccm的脉冲速率将氩脉冲到反应室中持续3秒。重复58次脉冲周期,得到厚度约为66的膜。在负1伏的泄漏电流密度(amps/cm2)约为1.08E-07(amps/cm2)。
本发明的ALD工艺可以用来制造用于栅极和电容结构的高k电介质。例如,通过在诸如掺杂的硅晶片的衬底上形成高k金属氧化物膜、并且利用诸如掺杂多晶硅的导电层覆盖该结构,所述工艺可以用于制造栅极。可选择地,通过在两个导电极板之间形成高k金属氧化物膜,所述工艺可以用于制造电容器。
图2是示出这样的高k电介质在栅极中的应用。在图2中,以剖面示出了场效应晶体管。该晶体管包括轻p掺杂硅衬底110,其中已形成了n掺杂硅源极130和n掺杂硅漏极140,其间保留有沟道区120。在沟道区120之上设置栅极电介质160。在栅极电介质160之上设置栅电极150,从而使其仅通过中间栅极电介质160与沟道区120分隔。当在源极130和漏极140之间存在电压差时,没有电流流过沟道区120,因为在源极130或漏极140处的一个结被反相偏置。然而,通过将正电压施加到栅电极150,电流流过沟道区120。栅极电介质160是根据本发明的ALD工艺制造的高k金属氧化物。
对本领域技术人员显而易见的是,对本发明的多种改变是可行的。例如,可以以许多方式产生并输送臭氧。此外,ALD反应室的细节、气体分配装置、阀门、时序等常常是可变化的。其他在本发明精神和范围之内的变化,不必在这里作详细说明。因此,本发明仅通过以下权利要求的保护范围加以限定。
Claims (12)
1.一种通过原子层沉积在衬底上生长金属氧化物膜的方法,该方法包括以下步骤:
(i)将金属烷基酰胺和臭氧的分离的脉冲引入到包含衬底的反应室中,其中所述金属是4族金属Hf、Zr、Ti;以及
(ii)重复步骤(i)直至获得目标厚度的膜。
2.根据权利要求1所述的方法,其中所述金属氧化物是氧化铪。
3.根据权利要求1所述的方法,其中所述金属烷基酰胺具有式M(NR1R2)4,其中M表示4族金属,R1是乙基单位,R2是甲基单位。
4.根据权利要求1所述的方法,其中所述衬底是硅。
5.一种用于晶体管的栅极绝缘体的形成方法,该方法包括以下步骤:
(i)通过原子层沉积在衬底上生长金属氧化物单层,所述原子层沉积是将金属烷基酰胺和臭氧的分离的脉冲引入到包含衬底的反应室中,其中所述金属是4族金属;
(ii)重复步骤(i)直至获得目标厚度的电介质膜;以及
(iii)在所述电介质层之上设置导电层。
6.根据权利要求5所述的方法,其中所述金属氧化物是氧化铪、氧化锆和氧化钛。
7.根据权利要求5所述的方法,其中所述金属烷基酰胺具有式M(NR1R2)4,其中M表示4族金属,R1是乙基单位,R2是甲基单位。
8.根据权利要求5所述的方法,其中所述衬底是硅。
9.一种形成电容器的方法,该方法包括以下步骤:
(i)通过原子层沉积形成金属氧化物单层,所述原子层沉积是将金属烷基酰胺前体和臭氧的分离的脉冲引入到包含衬底的反应室中,其中所述金属是4族金属;
(ii)重复步骤(i)直至获得目标厚度的膜;以及
(iii)在两个电极之间设置所述膜。
10.根据权利要求9所述的方法,其中所述金属氧化物是氧化铪、ZrO2和TiO2。
11.根据权利要求9所述的方法,其中所述金属烷基酰胺具有式M(NR1R2)4,其中M表示4族金属,R1是乙基单位,R2是甲基单位。
12.根据权利要求9所述的方法,其中所述衬底是所述两个电极之一。
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2003
- 2003-08-15 TW TW092122540A patent/TW200408323A/zh unknown
- 2003-08-18 JP JP2004529511A patent/JP2005536063A/ja active Pending
- 2003-08-18 CN CNB038257998A patent/CN100468648C/zh not_active Expired - Fee Related
- 2003-08-18 US US10/524,814 patent/US20060258078A1/en not_active Abandoned
- 2003-08-18 EP EP03788580A patent/EP1535319A4/en not_active Withdrawn
- 2003-08-18 KR KR1020057002823A patent/KR20050072087A/ko not_active Application Discontinuation
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Cited By (2)
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CN101809194B (zh) * | 2007-09-26 | 2013-04-24 | 伊斯曼柯达公司 | 中孔纳米颗粒层的构图方法 |
CN111081876A (zh) * | 2019-12-30 | 2020-04-28 | 华南理工大学 | 一种以高介电、宽带隙金属氧化物为绝缘层的有机薄膜晶体管及其制备方法与应用 |
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US20060258078A1 (en) | 2006-11-16 |
AU2003263872A1 (en) | 2004-03-03 |
WO2004017377A2 (en) | 2004-02-26 |
WO2004017377A3 (en) | 2004-07-01 |
KR20050072087A (ko) | 2005-07-08 |
EP1535319A2 (en) | 2005-06-01 |
TW200408323A (en) | 2004-05-16 |
CN100468648C (zh) | 2009-03-11 |
EP1535319A4 (en) | 2008-05-28 |
JP2005536063A (ja) | 2005-11-24 |
AU2003263872A8 (en) | 2004-03-03 |
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