CN1845453A - 使用填充凹进区的声谐振器的性能增强 - Google Patents

使用填充凹进区的声谐振器的性能增强 Download PDF

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CN1845453A
CN1845453A CNA2005101242969A CN200510124296A CN1845453A CN 1845453 A CN1845453 A CN 1845453A CN A2005101242969 A CNA2005101242969 A CN A2005101242969A CN 200510124296 A CN200510124296 A CN 200510124296A CN 1845453 A CN1845453 A CN 1845453A
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罗纳德·S·法齐欧
理查德·C·卢比
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    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02149—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
    • H—ELECTRICITY
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    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
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    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
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    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
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    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
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    • Y10T29/49002—Electrical device making
    • Y10T29/49005—Acoustic transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

一种声谐振器包括衬底、第一电极、压电材料层、第二电极和填充区。第一电极与衬底相邻，并且第一电极具有外周边。压电层与第一电极相邻。第二电极与压电层相邻，并且第二电极具有外周边。填充区在第一和第二电极之一中。

Description

使用填充凹进区的声谐振器的性能增强
技术领域
本发明一般地涉及声谐振器，更具体地说，涉及薄膜体声谐振器(FBAR)。
背景技术
对减少电子设备的成本和尺寸的需求创造了对更小的单个滤波元件的需求。薄膜体声谐振器(FBAR)和层叠式薄膜体波声谐振器(SBAR)代表了一类可能满足这些需求的滤波元件。这些滤波器可以统称为FBAR。FBAR是利用薄膜压电(PZ)材料中的体纵向声波的声谐振器。一般来说，FBAR包括夹在两个金属电极之间的PZ材料层。PZ材料和金属的组合通过沿其周边支撑该组合悬挂在空气中，或者放置在声镜上。
当在这两个电极之间创建电场时，PZ材料将某些电能转换为声波形式的机械能。声波通常沿与电场相同的方向传播，并且在某些频率处(包括谐振频率)在电极—空气或电极—声镜界面反射。在谐振频率处，器件可以用作电子谐振器。可以组合多个FBAR使得每一个是RF滤波器中的元件。
理想情况下，滤波器元件中的谐振能量完全被“捕捉”在谐振器。然而实际上，存在分散模式。这些模式可能导致滤波器质量因子(Q)的减小。
由于这些和其他的原因，产生了对本发明的需求。
发明内容
本发明的一个方面提供了一种声谐振器，其包括衬底、第一电极、压电材料层、第二电极和填充区。第一电极与衬底相邻，并且第一电极具有外周边。压电层与第一电极相邻。第二电极与压电层相邻，并且第二电极具有外周边。填充区在第一和第二电极之一中。
附图说明
图1图示了FBAR的俯视平面图。
图2图示了FBAR的横截面图。
图3图示了根据本发明一个实施例的FBAR的横截面图。
图4图示了图3中所示FBAR的一个实施例的俯视平面图。
图5图示了图3中所示FBAR的可替换实施例的俯视平面图。
图6图示了绘制在史密斯圆图上的两个示例性FBAR的Q圆。
图7图示了根据本发明一个实施例的FBAR的横截面图。
图8图示了根据本发明另一个实施例的FBAR的横截面图。
图9图示了根据本发明另一个实施例的FBAR的横截面图。
图10A-10F是图示了根据本发明另一个实施例制作FBAR的各个阶段的横截面图。
具体实施方式
在下面的具体实施方式中，参考附图进行描述，附图构成了本发明的一部分，附图中以示例方式示出了可实施本发明的特定实施例。因此，诸如“顶”、“底”、“前”、“后”、“头”、“尾”等之类的方向术语是参考描述图的方向进行描述的。由于本发明实施例的组件可以定位在多个不同的方向，所以方向术语仅用于示例，并没有任何限制意义。应当理解，可以采用其他实施例，并且在不脱离本发明的范围的前提下可以进行结构的或逻辑上的改变。因此，下面的具体实施方式并没有限制意义，本发明的范围仅由权利要求限定。
图1和2分别图示了FBAR 10的俯视图和横截面图。FBAR 10包括衬底12、沉陷14、第一电极16、压电(PZ)层18和第二电极20。在图1中，压电层18和沉陷14是看不见的。第二电极20有在图1中示为五边形的周边，其具有边20a、20b、20c、20d和20e。在图2的横截面图中示出了两个边20b和20e。一般来说，触点(未示出)耦合到第一电极16和第二电极20，并且钝化层(未示出)可能覆盖顶电极20。触点有利于将第一和第二电极16和20连接到电压源。
第一电极16、PZ层18和第二电极20一起形成了FBAR膜。FBAR膜与衬底12相邻，并且悬挂在沉陷14上方，以提供电极—空气界面。在一个实施例中，沉陷14是通过刻蚀掉衬底12的一部分来创建的。沉陷14的深度足以使得在FBAR膜下方创建足够的电极—空气界面。
在可替换实施例中，FBAR膜可以与形成在衬底12内部的声镜(未在图1和2中示出)相邻放置。以这种方式，形成了电极—声镜界面。这样形成的谐振器是固态装配谐振器(SMR)。
在一个实施例中，衬底12由硅(Si)制成，PZ层18由氮化铝(AlN)制成。或者，也可以使用其他的压电材料来制作PZ层18。在一个实施例中，第一和第二电极16和20可以由钼(Mo)制作。或者，也可以使用其他材料来制作电极。在一个实施例中，触点可以由金(Au)制作。或者，也可以使用其他材料来制作触点。
图1和2中所示的FBAR 10被配置为使用在PZ层18中传播的纵向或剪切声波。当经由外加电压在第一和第二电极16和20之间创建电场时，PZ层18的压电材料将某些电能转换为声波形式的机械能。在这样配置时，FBAR 10展现了分散模式，这导致了FBAR 10的质量因子(Q)下降。
图3图示了根据本发明一个实施例的FBAR 40的横截面图。FBAR 40包括衬底42、沉陷44、第一电极46、压电(PZ)层48、第二电极50和填充区60。一般来说，触点(未在图3中示出)耦合到第一和第二电极46和50，并且钝化层(也未在图3中示出)覆盖了第二电极。触点有利于将第一和第二电极46和50连接到电压源。第一电极46、PZ层48和第二电极50一起形成了FBAR膜，FBAR膜可以放置在沉陷44上方，或者放置在声镜上方，如上所述。FBAR膜图示为与衬底42相邻，并且悬挂在沉陷44上方，以提供电极—空气界面。与前述实施例一样，根据本发明利用SMR设计也可以获得电极—声镜界面。
第二电极50和FBAR膜的其他层有可以为各种配置的周边。例如，每一个的周边可以是类似于FBAR 10的五边形。也可以是各种多边形、圆形或各种不规则形状中的任何一种。图3中所示的横截面图图示了沿第二电极50的周边的两个位置，边50b和50e。在一个实施例中，PZ层48的边通常沿FBAR 40的垂直方向与第二电极50的边50b对齐，如图3所示。
在图3所示的FBAR 40中，在第二电极50中加入了填充区60，其与边50b相邻，并且接近第二电极50的边50e。在一个实施例中，填充区60恰好位于沉陷44的周边外部。以这种方式，当沉陷44的周边或外部直径沿垂直方向(在图3所示的方向)延伸时，填充区60恰好在沉陷44的周边“外部”。
在其他实施例中，填充区60重叠在沉陷44的周边上，从而使填充区60的一部分在沉陷44的周边的“内部”，一部分在“外部”。在其他实施例中，填充区60完全位于沉陷44的周边的“内部”。
填充区60提高了FBAR 40的性能，导致改进了插损，并增大了FBAR 40的谐振器质量因子Q。FBAR 40的总质量因子Q与电阻参数(称为Rp)成比例。在FBAR 40中，Rp可以通过填充区60加以提高。
经由外加电压在第一和第二电极46和50之间创建了电场。PZ层48的压电材料将某些电能转换为声波形式的机械能。FBAR 40中的某些声波是任何模式类型的纵向声波，而其他是压缩、剪切或鼓式模式类型的横向声波。FBAR 40被设计为使用沿PZ层48的厚度延伸方向传播的纵向声波作为期望的谐振器模式。然而，提供有填充区60的FBAR 40减少或抑制了能量损耗，从而提高了滤波器的Q。在一个实施例中，填充区60有助于从FBAR 40的横向模式捕捉能量。
在一个实施例中，填充区60填充有不同于第二电极50所用材料的材料。这种情况下，填充区60中的材料与第二电极50中的剩余材料(在一种情况下是Mo)相比具有不同的分散特性。加入具有不同分散特性的材料可以改进插损，并增大FBAR 40的谐振器质量因子Q。在一个实施例中，填充区60中的材料提高了FBAR膜在其边缘处的硬度。在一种情况下，填充区60中的材料提高了填充区60相对于FBAR膜中心处的声阻。这种材料可以比电极材料更紧密。例如，填充区60中的材料可以是W，而第二电极50可以是Mo。在其他实施例中，第一和第二电极46和50可以是诸如Pt、W、Cu、Al、Au或Ag之类的金属。在可替换实施例中，填充区60中的材料也可以是诸如聚酰亚胺、BCB、SiO2、Si3N4或其他电介质、AlN、ZnO、LiNbO3、PZT、LiTaO3、Al2O3或其他压电材料、Pt、W、Cu、Al、Au、Ag或其他金属或金属合金。
在一个实施例中，填充区60在第二电极50中的深度具有数百到数千埃的量级，宽度具有几分之一微米到数个微米甚至更大的量级，直到延伸在沉陷44的周边之外或外部的第二电极50的宽度的那一部分。在一个实施例中，第二电极50被选择性地刻蚀以形成凹进特征结构，该结构随后被填充以材料以形成填充区60。在一个实施例中，第二电极50利用抬离技术来构造以形成凹进特征结构，该结构被填充以材料以形成填充区60。
图4和5图示了根据本发明可替换实施例的图3的FBAR 40的平面图。如图4和5中所示，FBAR 40包括衬底42、第一电极46和第二电极50。在图4和5中，压电(PZ)层48和沉陷44是看不见的。一般来说，触点(未在图中示出)耦合到第一和第二电极46和50，并且钝化层(也未在图中示出)覆盖了第二电极50。
在图4和5中，填充区60被图示为相邻于第二电极50的周边延伸。在图中，第二电极50的周边通常是具有五条相对较直的边(50a、50b、50c、50d、50e)的五边形，但是也可以基本是任何多边形、圆形，或者具有任何其他的平滑或不规则的形状。
在图5中，填充区60被图示为沿五边形电极的所有五条边相邻于第二电极50的周边延伸，即，相邻于边50a、50b、50c、50d、50e延伸。图4图示了FBAR 40的可替换实施例，其中填充区60沿五边形电极的五条边中的四条相邻于第二电极50的周边延伸，即，相邻于边50b、50c、50d、50e延伸。在一个实施例中，触点附接到第二电极50的第五条边50a，从而在该实施例中填充区60不沿这条边延伸。
本领域的技术人员应当理解，可以相邻于第二电极50的边提供任何数目的可替换填充区60，这与本发明是一致的。如图所示，填充区60可以沿第二电极50的某些边或所有边连续延伸，填充区60可以具有沿边不连续的较小的分段，并且可以使用其他形状和配置的填充区60，尤其是当第二电极50的形状不是五边形时。
图6图示了绘制在史密斯(Smith)圆图上的两个示例性FBAR的Q圆，并且图示了在其中一个FBAR中Rp以及Q的提高。如本领域所公知的，史密斯圆图是复阻抗(在图6中用来图示s11和s22散射参数的测量值)的极座标图。这些s11和s22散射参数代表后向波和前向波的复振幅的比率。史密斯圆图有助于将反射系数转换为阻抗，并且其映射放置到单位圆中的阻抗的一部分。图6中所示的Q圆证明了FBAR 40性能的提高。图6图示了示例性填充器件(例如具有填充区60的FBAR 40)的S参数测量结果。如图所示，具有填充区60的FBAR 40的填充器件(标记为S11的实线)相对于图中上半部分(标记为S22的虚线)的控制器件来说具有高得多的Rp，控制器件例如是图2中所示的。
通常，穿过单位圆的水平轴代表实阻抗，轴上方区域代表感抗，下方区域代表容抗。图中0电抗的左边部分代表串联谐振频率(fs)，并且在史密斯圆图的左侧Q圆与实轴相交处发生。图中的左边部分还证明了电阻Rs的参数。图中0电抗的右边部分代表并联谐振频率(fp)，并且在史密斯圆图的右侧Q圆与实轴相交处发生。图中的右边部分还证明了电阻Rp的参数。史密斯圆图上FBAR滤波特性图到史密斯圆图的周边越近，该FBAR的Q就越高。另外，该曲线越平滑，FBAR中的噪声就越低。
在图6中，作为滤波器的FBAR 40的性能由实线Q圆s11图示，电极中没有填充区的现有技术FBAR的性能由虚线Q圆s22图示。很明显，FBAR 40提高了滤波器在接近频率fp处的质量。Q圆s11所示的FBAR 40在单位圆的上半部分更为近似单位圆，并且在该区域中代表了较低损耗的器件，这提高了FBAR 40用在滤波器中时的性能。
图6还图示了用作滤波器的FBAR 40实际上在串联谐振频率fs下增强了副振荡膜式，如单位圆中的左下方或“西南”象限所指示。当FBAR 40用在该频率区间的噪声的增加不会削弱器件性能的应用中时，可以利用图示在单位圆中其他区域的改进。例如，在某些实施例中，FBAR 40在采用半阶梯拓扑的滤波器应用中用作谐振器。滤波器的性能受益于提高后的Rp，并且由增强的副振荡模式引入的任何噪声都在滤波器通带之外。
图7图示了根据本发明可替换实施例的FBAR 40的横截面图。FBAR40基本与图3中所示的相同，包括衬底42、沉陷44、第一电极46、压电(PZ)层48、第二电极50和填充区60。还图示了第二电极50周边的两条边缘50b和50e。然而，除此之外，图7中所示的FBAR 40还有形成在第二电极50的某一表面中的填充区60，该表面与填充区60在图3中形成的表面相反。如FBAR 40在图3中所示，填充区60在第二电极50的“顶”表面，而FBAR 40在图7中所示，填充区60在第二电极50的“底”表面。在一个实施例中，图7中所示的填充区60也在沉陷44的周边边缘的外部。在可替换实施例中，填充区60覆盖了沉陷44的周边，而在其他实施例中，填充区60完全在沉陷44的周边内部。
在一个实施例中，图7所示的FBAR 40的性能与上述结合图3所述的FBAR 40的性能基本相同。位于第二电极50的“底”表面上的填充区60也可以用本领域技术人员所公知的各种方式来实现。例如，可以在压电沉积后用抬离工艺(即，掩模、材料沉积和抬离)，接着沉积顶电极材料来构造图7所示的结构。
图8和9图示了根据本发明可替换实施例的FBAR 70的横截面图。FBAR 70包括衬底72、沉陷74、第一电极76、压电(PZ)层78、第二电极80和填充材料90。一般来说，触点(未在图中示出)耦合到第一和第二电极76和80。另外，可选钝化层(未在图中示出)可用来覆盖第二电极80。触点有利于将第一和第二电极76和80连接到电压源。第一电极76、PZ层78和第二电极80一起形成了FBAR膜，FBAR膜可以放置在沉陷74上方，或者放置在声镜上方，如上所述。FBAR膜图示为与衬底72相邻，并且悬挂在沉陷74上方以提供电极—空气界面。与前述实施例一样，根据本发明利用SMR设计也可以获得电极—声镜界面。
FBAR 70类似于图3中所示的FBAR 40；然而，FBAR 70具有插入在第一电极76中的填充区90，而不是像上面那样插入在第二电极中。插入在第一电极76中的填充区90也提高了FBAR 70的性能，这导致FBAR 70的插损的改进和谐振器质量因子Q的增大。在图8中，填充区90图示为与第一电极76的“顶表面”相邻，而在图9中，填充区90图示为与第一电极76的“底表面”相邻。在每种情况下，填充区90都图示为恰好在沉陷74的周边外部。以这种方式，当沉陷74的周边或外部直径沿垂直方向(如图8和9中图示定向)延伸时，填充区90恰好在沉陷74的周边“外部”。在可替换实施例中，填充区90重叠在沉陷74的周边上，而在其他实施例中，填充区90完全位于沉陷74的周边的“内部”。与以上结合FBAR 40所述的填充区60类似，填充区90提高了FBAR 70的性能，这导致FBAR 70的噪声减小的改进和谐振器质量因子Q的增大。
与以上实施例类似，填充区90被填充以不同于第二电极80所用材料的材料。这种情况下，填充区90中的材料具有与第二电极80的剩余材料(在一种情况下是Mo)不同的分散特性。加入具有不同分散特性的材料可以改进插损并增大FBAR 70的谐振器质量因子Q。在一个实施例中，填充区90中的材料提高了FBAR膜在其边缘处的硬度。在一种情况下，填充区90中的材料提高了填充区90相对于FBAR膜中心处的声阻。这种材料可以比电极材料更紧密。例如，填充区90中的材料可以是W，而第二电极80可以是Mo。在其他实施例中，第一和第二电极76和80可以是诸如Pt、W、Cu、Al、Au或Ag之类的金属。在可替换实施例中，填充区90中的材料也可以是诸如聚酰亚胺、BCB、SiO2、Si3N4或其他电介质，AlN、ZnO、LiNbO3、PZT、LiTaO3、Al2O3或其他压电材料，Pt、W、Cu、Al、Au、Ag或其他金属或金属合金。
FBAR 40和70可以用与本发明一致的各种方式来制作。例如在一个实施例中，首先通过沉积电极金属到略小于期望厚度的厚度，在顶电极中创建凹进区。然后使用光掩模在谐振器的中心区域形成图样。然后沉积剩余厚度的电极金属，并使用抬离工艺移去凹进区中残留的光刻胶。接着使用另外的光掩模在填充区形成图样。在填充区中沉积填充材料，并以抬离工艺移去填充区外部的掩模和填充材料。在另一个实施例中，可以通过首先沉积电极金属到期望厚度，以光掩模在电极上形成图样，并刻蚀凹进区来产生凹进区。在另一个实施例中，可以通过首先沉积填充材料、以光掩模在填充区上形成图样，并刻蚀掉填充区外部的填充材料来产生填充材料。
图10A-10F是图示了根据本发明一个实施例制作FBAR 100的各个中间阶段的横截面图。FBAR 100与图3-9中所示的类似，包括衬底102、沉陷104、第一电极106、压电(PZ)层108和第二电极110，其一起形成了FBAR膜。图10A图示了在形成填充区120(在图10F中示出，与上述的填充区60和90类似)之前的FBAR 100。
图10B图示了在FBAR膜上方沉积有光掩模109的FBAR 100。光掩模109被用来以抬离工艺在凹进区上形成图样。图10C图示了在沉积了另外的电极材料金属110之后，但是在抬离工艺之前图10B的FBAR 100。图10D图示了在抬离工艺之后的FBAR 100。抬离工艺移去了光掩模109和光掩模109上的所有金属110。以这种方式，抬离工艺限定了凹进区111。
随后，图10E图示了在FBAR膜上方沉积有光掩模113以在填充区上形成图样的FBAR 100。图10F图示了在沉积了填充材料120之后，但是在抬离工艺之前图10E的FBAR 100。在抬离工艺后，图3的FBAR 40图示了所获得的结构。在某些实施例中，FBAR可以另外采用至少一个钝化层。
可以类似地构造底电极上的填充后的凹进区。此外，无论填充区是在顶电极中还是在底电极中填充区的顶部并不一定要与电极表面对齐。FBAR中的凹进可以用抬离工艺来生成，但是也可以用刻蚀步骤来生成。可以通过首先以光掩模作为掩模，沉积金属材料，然后利用抬离使在凹进区中留下填充材料来在凹进区中形成填充材料的图样。也可以通过首先利用金属沉积，接着进行光掩模并刻蚀来加入填充材料。
尽管这里图示并描述了特定实施例，但是本领域的技术人员应当认识到，在不脱离本发明的范围的前提下，可以用各种替代和/或等同实现方式来替换图示并描述的特定实施例。本申请试图覆盖这里所述的特定实施例的任何修改或变化。因此，本发明仅由权利要求及其等同物限定。
本专利申请文件与2004年6月14日提交的题为“Acoustic resonatorperformance enhancement using selective metal etch”的实用专利申请No.10/867,540(代理人案卷号No.10040878-1)有关，该申请与本发明一同转让给同一受让人。

Claims (29)

1.一种声谐振器，包括：
衬底；
与所述衬底相邻的第一电极，其中所述第一电极具有外周边；
与所述第一电极相邻的压电层；
与所述压电层相邻的第二电极，其中所述第二电极具有外周边；以及
在所述第一和第二电极之一中的填充区。
2.如权利要求1所述的声谐振器，其中在所述衬底中形成有沉陷，并且所述沉陷具有沉陷周边。
3.如权利要求1所述的声谐振器，其中在所述衬底中形成有声镜，并且所述第一电极跨越了所述声镜。
4.如权利要求1所述的声谐振器，还包括与所述第二电极相邻的钝化层，所述钝化层位于通常平行于第一平面的第二平面。
5.如权利要求2所述的声谐振器，其中在所述第一和第二电极之一中的所述填充区在所述沉陷周边外部。
6.如权利要求2所述的声谐振器，其中在所述第一和第二电极之一中的所述填充区在所述沉陷周边内部。
7.如权利要求2所述的声谐振器，其中在所述第一和第二电极之一中的所述填充区重叠在所述沉陷周边上。
8.如权利要求1所述的声谐振器，其中在所述第一和第二电极之一中的所述填充区与所述外周边相邻。
9.如权利要求1所述的声谐振器，其中所述第一和第二电极中的至少一个包括不同于所述填充区中的材料的材料。
10.如权利要求8所述的声谐振器，其中所述填充材料选自包括以下物质的组：电介质、金属、金属合金、压电材料、Mo、Pt、Al、Cu、W、Au、Ag、聚酰亚胺、BCB、SiO2、Si3N4、AlN、ZnO、LiNbO3、PZT、LiTaO3和Al2O3。
11.如权利要求1所述的声谐振器，其中所述填充区绕着所述第一和第二电极之一的所述外周边的基本部分延伸。
12.如权利要求1所述的声谐振器，其中所述填充区在所述第一和第二电极之一中的深度在数百到数千埃的量级，宽度在几分之一微米到数十微米的量级。
13.如权利要求1所述的声谐振器，其中所述填充区偏离所述第一和第二电极之一的外周边0到数十微米。
14.一种声谐振器，包括：
具有第一表面的衬底；
与所述衬底的所述第一表面相邻的第一电极；
与所述第一电极相邻的压电材料层；
与所述压电材料层相邻的第二电极，所述第二电极位于第一平面；以及
配置在所述第二电极中的填充区。
15.如权利要求14所述的声谐振器，其中在所述衬底的所述第一表面中形成有具有沉陷周边的沉陷，并且所述第一电极跨越了所述沉陷。
16.如权利要求14所述的声谐振器，其中在所述衬底的所述第一表面中形成有声镜，并且所述第一电极跨越了所述声镜。
17.如权利要求15所述的声谐振器，其中所述第二电极中的所述填充区在所述沉陷周边外部。
18.如权利要求15所述的声谐振器，其中所述第二电极中的填充区在所述沉陷周边内部。
19.如权利要求15所述的声谐振器，其中所述第二电极中的填充区重叠在所述沉陷周边上。
20.如权利要求14所述的声谐振器，其中所述第二电极包括不同于所述填充区中的材料的材料。
21.如权利要求14所述的声谐振器，其中所述填充材料比所述电极材料更为紧密，从而其提高了所述填充区相对于所述声谐振器的中心处的声阻。
22.一种声谐振器，包括：
衬底；
与所述衬底相邻的第一电极；
与所述第一电极相邻的压电材料层；
与所述压电材料层相邻的第二电极，其中所述第一电极、所述压电材料层和所述第二电极一起形成了具有外边和中心的声膜；以及
用于提高所述声膜的外边相对于所述声膜的中心处的声阻的装置。
23.如权利要求22所述的声谐振器，其中所述第二电极包括填充区，所述填充区中具有不同于所述第二电极中材料的材料。
24.一种用于制作声谐振器的方法，包括：
提供衬底；
制作与所述衬底相邻的第一电极；
制作与所述第一电极相邻的压电层；
沉积电极材料到第一厚度以形成与所述压电层相邻的第二电极；
在所述第二电极上沉积第一光掩模；
沉积另外的电极材料到第二厚度以形成所述第二电极；
移去所述光掩模从而暴露所述第二电极中的凹进区；以及
以填充材料填充所述凹进区。
25.如权利要求24所述的方法，还包括在填充所述凹进区之前在所述第二电极上方沉积第二光掩模。
26.如权利要求24所述的方法，还包括在所述衬底中形成沉陷。
27.如权利要求24所述的方法，还包括以不同于所述电极材料的材料填充所述凹进区。
28.如权利要求24所述的方法，其中填充所述凹进区的操作包括以选自包括以下物质的组的材料进行填充：电介质、金属、金属合金、压电材料、Mo、Pt、Al、Cu、W、Au、Ag、聚酰亚胺、BCB、SiO2、Si3N4、AlN、ZnO、LiNbO3、PZT、LiTaO3和Al2O3。
29.一种用于制作声谐振器的方法，包括：
提供衬底；
制作与所述衬底相邻的第一电极；
制作与所述第一电极相邻的压电层；
沉积电极材料以形成第二电极；
在所述第二电极上方沉积第一光掩模；
刻蚀所述第二电极以在所述第二电极中形成凹进区；以及
以填充材料填充所述凹进区。
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