WO2019141073A1 - 一种薄膜体声波谐振器 - Google Patents

一种薄膜体声波谐振器 Download PDF

Info

Publication number
WO2019141073A1
WO2019141073A1 PCT/CN2018/125238 CN2018125238W WO2019141073A1 WO 2019141073 A1 WO2019141073 A1 WO 2019141073A1 CN 2018125238 W CN2018125238 W CN 2018125238W WO 2019141073 A1 WO2019141073 A1 WO 2019141073A1
Authority
WO
WIPO (PCT)
Prior art keywords
bulk acoustic
film bulk
resonator according
bump
piezoelectric layer
Prior art date
Application number
PCT/CN2018/125238
Other languages
English (en)
French (fr)
Inventor
廖佩淳
林瑞钦
赵俊武
Original Assignee
武汉衍熙微器件有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201820096098.9U external-priority patent/CN207869078U/zh
Priority claimed from CN201810051954.3A external-priority patent/CN108134588B/zh
Priority claimed from CN201820198355.XU external-priority patent/CN207869079U/zh
Priority claimed from CN201810113583.7A external-priority patent/CN108134589B/zh
Application filed by 武汉衍熙微器件有限公司 filed Critical 武汉衍熙微器件有限公司
Priority to JP2020555286A priority Critical patent/JP7245849B2/ja
Priority to EP18901250.3A priority patent/EP3723285A4/en
Priority to KR1020207018209A priority patent/KR102455391B1/ko
Publication of WO2019141073A1 publication Critical patent/WO2019141073A1/zh
Priority to US16/544,984 priority patent/US11539340B2/en
Priority to US18/058,271 priority patent/US20230091905A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/0211—Means for compensation or elimination of undesirable effects of reflections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors

Definitions

  • the invention belongs to the field of resonators, and in particular relates to a film bulk acoustic wave resonator.
  • the resonator needs to provide better Q value to reduce the loss of the filter and obtain a higher quality filter response.
  • Q value There are many ways to increase the Q value by suppressing the lateral standing wave, but most of them have to increase the number of layers of the process, which will inevitably increase the manufacturing cost of the device.
  • the technical problem to be solved by the present invention is to provide a film bulk acoustic resonator which can be improved without additionally increasing the number of process layers, thereby achieving the purpose of suppressing the transverse wave effect and controlling the manufacturing cost of the device.
  • a film bulk acoustic wave resonator that suppresses the shear wave effect, and includes a layered structure composed of a top electrode, a piezoelectric layer and a bottom electrode, and a substrate;
  • a reflective interface is disposed between the bottom electrode and the substrate;
  • the outer contour of the layered structure is a closed line type in which a curve and at least one straight line segment are connected.
  • the curve is a convex or a concave line shape.
  • the straight line segments are two or more, and the angle between the adjacent straight line segments is greater than 0 degrees and less than 180 degrees.
  • the reflective interface is an air cavity between the bottom electrode and the substrate.
  • the reflective interface is formed by overlapping high acoustic resistance and low acoustic resistance materials.
  • At least one of the bottom electrode, the piezoelectric layer and the top electrode is provided with a bump or a missing block; and the number of the bump or the missing block is at least one.
  • a film bulk acoustic wave resonator comprising a substrate, a bottom electrode, a piezoelectric layer and a top electrode arranged in sequence from bottom to top, wherein a reflective interface is provided between the substrate and the bottom electrode, wherein: the bottom electrode, At least one of the piezoelectric layer and the top electrode has a shape different from the other layers.
  • the shape is different: adding at least one bump.
  • the bump is an independent bump having a certain distance from the original structure of the layer.
  • the certain distance is greater than 0, less than or equal to 100um.
  • the bump is a connecting bump connected to the original structure of the layer.
  • the shape is different: at least one missing block is provided in the original structure.
  • the missing block is disposed at an edge of the original structure or at any position in the middle.
  • the height of the missing block is less than or equal to the thickness of the original structure.
  • the piezoelectric layer is made of a material having piezoelectric characteristics.
  • the piezoelectric material is AlN, AlScN, ZnO, PZT, LiNO 3 or LiTaO 3 .
  • the shape is different by adding at least one bump and at least one missing block in the original structure.
  • the invention has the beneficial effects of suppressing the lateral standing wave by defining the shape of all or part of the layered structure, without adding a new process, controlling the manufacturing cost of the device, and maximizing the benefit of product development.
  • Figure 1 is a cross-sectional view showing an embodiment of the present invention.
  • Figure 2 is a cross-sectional view showing still another embodiment of the present invention.
  • Figure 3 is a cross-sectional view showing still another embodiment of the present invention.
  • Fig. 4 is a plan view showing a first embodiment of the present invention.
  • Figure 5 is a plan view of a second embodiment of the present invention.
  • Figure 6 is a plan view of a third embodiment of the present invention.
  • Figure 7 is a plan view of a fourth embodiment of the present invention.
  • Figure 8 is a plan view of a fifth embodiment of the present invention.
  • Figure 9 is a plan view of a sixth embodiment of the present invention.
  • Figure 10 is a cross-sectional view along line AA of Figure 9.
  • Figure 11 is another cross-sectional view taken along line AA of Figure 9.
  • Figure 12 is a plan view of a seventh embodiment of the present invention.
  • Figure 13 is a plan view of an eighth embodiment of the present invention.
  • Figure 14 is a plan view of a ninth embodiment of the present invention.
  • Figure 15 is a plan view of a tenth embodiment of the present invention.
  • FIG. 1 is a cross-sectional view of a film bulk acoustic resonator including a top electrode 101, a piezoelectric layer 102, and a bottom electrode 103, wherein an air cavity 104 is further disposed between the bottom electrode 103 and the substrate 105.
  • the air cavity 104 acts as a reflective interface.
  • FIG. 2 is a cross-sectional view of a film bulk acoustic resonator including a top electrode 201, a piezoelectric layer 202, and a bottom electrode 203, wherein the substrate 205 is provided with an air cavity formed by etching holes. 204, the air cavity 204 acts as a reflective interface.
  • FIG. 3 is a cross-sectional view of a film bulk acoustic resonator including a top electrode 301, a piezoelectric layer 302, and a bottom electrode 303.
  • the bottom electrode 303 and the substrate 305 are provided with a plurality of layers.
  • the high acoustic resistance and low acoustic resistance are relative concepts.
  • the piezoelectric layer is made of a material having piezoelectric characteristics such as AlN, AlScN, ZnO, PZT, LiNO 3 or LiTaO 3 .
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • the embodiment includes a bottom electrode 403, a piezoelectric layer 402 and a top electrode 401 which are sequentially formed from bottom to top.
  • the outer contour of the top electrode 401 is a convex curve 4011 and a connecting curve 4011. Straight line segment 4012.
  • the number of process layers is not additionally increased.
  • This embodiment is applicable to the film bulk acoustic resonators described in Figs. 1, 2 and 3.
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • the principle and structure of this embodiment are basically the same as those of the first embodiment, and the difference is that, as shown in FIG. 5, the bottom electrode 503, the piezoelectric layer 502, and the top electrode 501 which are sequentially formed from bottom to top are included.
  • the outer contour of the top electrode 501 is formed by connecting three curved lines of a convex curve 5011, a first straight line segment 5012 and a second straight line segment 5013. The angle between the first straight line segment 5012 and the second straight line segment 5013 is greater than 0 degrees and less than 180 degrees.
  • This embodiment is applicable to the film bulk acoustic resonators described in Figs. 1, 2 and 3.
  • Embodiment 3 is a diagrammatic representation of Embodiment 3
  • the principle and structure of this embodiment are basically the same as those of the first embodiment, and the difference is that, as shown in FIG. 6, the bottom electrode 603, the piezoelectric layer 602, and the top electrode 601 which are sequentially formed from bottom to top are included.
  • the top electrode 601 as an example, the closed line shape of the top electrode 601 is formed by a convex line 6011, a first straight line segment 6012, a second straight line segment 6013, and a third straight line segment 6014.
  • the first straight line segment 6012 and the third straight line segment 6014 are parallel to each other.
  • This embodiment is applicable to the film bulk acoustic resonators described in Figs. 1, 2 and 3.
  • the design idea of the first to third embodiments is that an asymmetric resonator is formed by designing a shape consisting of only one curved edge and any flat edge, and the reflection of the lateral standing wave in the asymmetric piezoelectric layer is greatly reduced.
  • the original waves are in the same direction, so that the energy of the lateral standing wave is attenuated, and finally the effect of increasing the Q value is achieved.
  • a curved edge plus a closed pattern formed by any flat edge which can be designed to adjust different arbitrary flat edges and angles to suit different requirements (such as Q value requirements, shape requirements, volume requirements, etc.) It is more flexible in design, and it can achieve the effect of suppressing the lateral standing wave and is more flexible.
  • the outer contour of the layered structure is a closed line type in which a curve and at least one straight line segment are connected.
  • the curve is a convex or concave line shape, such as a circular arc, an elliptical arc, a parabola or any smooth curve, but only one bending direction is allowed.
  • the outer contour of the layered structure has only one curved surface, and the others are planes, thereby forming an asymmetrical geometric figure, so that the formed lateral standing waves are not in the same position when reflected back, thereby dispersing and canceling; The new process controls the manufacturing cost of the device and maximizes the benefits of product development.
  • Embodiment 4 is a diagrammatic representation of Embodiment 4:
  • the present embodiment provides a film bulk acoustic resonator, as shown in FIG. 7, comprising a substrate 105, a bottom electrode 103, a piezoelectric layer 102 and a top electrode 101 disposed in order from bottom to top, wherein the substrate 105 and the bottom electrode 103 Having a reflective interface therebetween, at least one of the bottom electrode 103, the piezoelectric layer 102 and the top electrode 101 is added with at least one bump similar to the original structural material of the layer; the bump and the location
  • the original structure of the layer has the same thickness. Then, the preparation process of the bumps is the same as the other structures of the layer, and only a bump is needed to be grown during preparation.
  • the bump is an independent bump having a certain distance (greater than 0, less than or equal to 100um) from the original structure of the layer.
  • the independent bumps may not be limited to a square shape, and each side has a length of 1 nm to 100 ⁇ m.
  • an independent bump 1013 is provided, and the distance between the independent bump 1013 and the top electrode outer contour 1011 is greater than 0 and less than or equal to 100 um.
  • an independent bump 1013 may be disposed on the top electrode 101, two independent bumps may be disposed on the piezoelectric layer 102, and three independent bumps may be disposed on the bottom electrode 103.
  • the number of independent bumps per layer is not limited, and the number of layers and layers provided by the independent bumps are not limited.
  • the material of the piezoelectric layer is composed of a material having piezoelectric characteristics, for example, materials such as AlN, AlScN, ZnO, PZT, LiNO 3 , LiTaO 3 , BST, etc., which have piezoelectric characteristics or doped with a pressure. Electrical properties of the material.
  • This embodiment is applicable to the film bulk acoustic resonators shown in Figs. 1, 2, and 3.
  • Embodiment 5 is a diagrammatic representation of Embodiment 5:
  • the bump is a connecting bump connected to the original structure of the layer.
  • the thickness of the connecting bump is the same as the layer in which it is located.
  • the preparation process of the connecting bumps is the same as the other structures of the layer in which they are located, and it is only necessary to control the outer contour shape at the time of preparation.
  • the connecting bump has a longest dimension of 1 nm to 100 um.
  • connection bumps 1014 are connected at any position on the top electrode outer contour 1011.
  • a connection bump 1014 may be connected to the top electrode 101, two connection bumps may be connected to the piezoelectric layer 102, and three connection bumps may be connected to the bottom electrode 103.
  • the number of connection bumps per layer is not limited, and the number of layers and layers provided by the connection bumps are not limited.
  • the material of the piezoelectric layer is composed of a material having piezoelectric characteristics, for example, materials such as AlN, AlScN, ZnO, PZT, LiNO 3 , LiTaO 3 , BST, etc., which have piezoelectric characteristics or doped with a pressure. Electrical properties of the material.
  • This embodiment is applicable to the film bulk acoustic resonators shown in Figs. 1, 2, and 3.
  • the present embodiment provides a film bulk acoustic wave resonator comprising a substrate 105, a bottom electrode 103, a piezoelectric layer 102 and a top electrode 101 disposed in order from bottom to top, wherein a reflective interface is provided between the substrate 105 and the bottom electrode 103.
  • At least one of the bottom electrode 103, the piezoelectric layer 102 and the top electrode 101 is provided with a missing block, and the missing block is located in the original structure and is close to the edge of the active region.
  • the active area is clearly defined as a region where the top electrode 101, the piezoelectric layer 102 and the bottom electrode 103 overlap, and a reflective interface under the overlapping region.
  • the missing block 1015 is provided at any position in the middle of the top electrode 101.
  • the height of the missing block 1015 is less than or equal to the thickness of the original structure.
  • the missing block is the hollow block 10151; when the height of the missing block 1015 is smaller than the thickness of the original structure, as shown in FIG. 11, the missing block is concave.
  • the slot is missing block 10152.
  • This embodiment is applicable to the film bulk acoustic resonators shown in Figs. 1, 2, and 3.
  • the present embodiment provides a film bulk acoustic resonator, as shown in FIG. 12, comprising a substrate 105, a bottom electrode 103, a piezoelectric layer 102 and a top electrode 101 disposed in order from bottom to top, wherein the substrate 105 and the bottom electrode 103 There is a reflective interface between the bottom electrode 103, the piezoelectric layer 102 and the top electrode 101, and at least one layer is provided with a missing block.
  • the missing block is disposed at the edge of the original structure, and the outer contour of the original structure
  • There is at least one trimming edge which is equivalent to cutting a piece of the edge of the original structure to form a missing block. Therefore, as long as the outer contour of the grown layered structure is defined in each layer process, no additional process is required.
  • the top electrode outer contour 1011 is provided with three trimming edges 1012, and the length of each trimming edge 1012 may be the same or different.
  • a trimming edge may be provided on the top electrode 101, two trimming edges may be provided in the piezoelectric layer 102, and three trimming edges may be provided in the bottom electrode 103.
  • the number of trimmings per layer is not limited, and the number of layers and layers set by the trimming are not limited.
  • the trimming length is from 1 nm to 100 um.
  • the missing block located at the edge of the original structure is not limited to a straight cut edge, but may be other shapes, such as a missing corner.
  • the material of the piezoelectric layer is composed of a material having piezoelectric characteristics, for example, materials such as AlN, AlScN, ZnO, PZT, LiNO 3 , LiTaO 3 , BST, etc., which have piezoelectric characteristics or doped with a pressure. Electrical properties of the material.
  • This embodiment is applicable to the film bulk acoustic resonators shown in Figs. 1, 2, and 3.
  • the core point of Embodiments 4 to 7 is that only the shape of at least one layer is limited without additionally increasing the number of process layers, for example, adding a bump or a missing block to adjust the shape of the top electrode, the piezoelectric layer or the bottom electrode, Thereby, the energy of the transverse wave is attenuated, the reflection energy of the transverse wave is reduced, and the Q value is increased.
  • the present embodiment provides a film bulk acoustic resonator, as shown in FIG. 13, including a bottom electrode 103, a piezoelectric layer 102, and a top electrode 101 disposed in this order from bottom to top, at the bottom electrode 103 and the piezoelectric layer. At least one of the 102 and the top electrode 101 is provided with a missing block, and a top electrode bump 1016 is additionally provided at an upper portion of the top electrode.
  • the missing block is disposed at the edge of the original structure, and at least one trimming edge is provided on the outer contour of the original structure, that is, equivalent to cutting a piece of the edge of the original structure to constitute a missing block.
  • the top electrode outer contour 1011 is provided with three trimming edges 1012, and the length of each trimming edge 1012 may be the same or different.
  • a trimming edge may be provided on the top electrode 101, two trimming edges may be provided in the piezoelectric layer 102, and three trimming edges may be provided in the bottom electrode 103.
  • the number of trimmings per layer is not limited, and the number of layers and layers set by the trimming are not limited.
  • the trimming length is from 1 nm to 100 um.
  • the top electrode bumps 1016 are provided in three pieces, and the circumferential direction is evenly distributed on the upper portion of the top electrode, and the number and arrangement of the top electrode bumps 1016 may be arbitrary.
  • the material of the piezoelectric layer is composed of a material having piezoelectric characteristics, for example, materials such as AlN, AlScN, ZnO, PZT, LiNO 3 , LiTaO 3 , BST, etc., which have piezoelectric properties or doped with a pressure. Electrical properties of the material.
  • This embodiment is applicable to the film bulk acoustic resonators shown in Figs. 1, 2, and 3.
  • the present embodiment provides a film bulk acoustic wave resonator, as shown in FIG. 14, including a bottom electrode 103, a piezoelectric layer 102, and a top electrode 101 disposed in this order from bottom to top, at the bottom electrode 103 and the piezoelectric layer. At least one of the 102 and top electrodes 101 is provided with a missing block, and at least one top electrode bump 1016 is disposed on the upper portion of the top electrode. In this embodiment, the missing block is located in the original structure and is close to the edge of the active area.
  • the active area is clearly defined as a region where the top electrode 101, the piezoelectric layer 102 and the bottom electrode 103 overlap, and a reflective interface under the overlapping region.
  • the top electrode 101 Taking the top electrode 101 as an example, at least one missing block 1015 is provided at any position in the middle of the top electrode 101.
  • the height of the missing block 1015 is less than or equal to the thickness of the original structure.
  • the top electrode bumps 1016 are provided in three pieces, and the circumferential direction is evenly distributed on the upper portion of the top electrode, and the number and arrangement of the top electrode bumps 1016 may be arbitrary.
  • the material of the piezoelectric layer is composed of a material having piezoelectric characteristics, for example, materials such as AlN, AlScN, ZnO, PZT, LiNO 3 , LiTaO 3 , BST, etc., which have piezoelectric characteristics or doped with a pressure. Electrical properties of the material.
  • This embodiment is applicable to the film bulk acoustic resonators shown in Figs. 1, 2, and 3.
  • the core of the eighth embodiment and the ninth embodiment is that the features of the bump and the missing block are combined to achieve a better effect.
  • Embodiment 10 (Best Embodiment):
  • the film bulk acoustic resonator of the embodiment includes a layered structure composed of a top electrode, a piezoelectric layer and a bottom electrode, and a substrate; a reflective interface is disposed between the bottom electrode and the substrate; and the layered structure is The outer contour is a closed line type in which one curve and at least one straight line segment are connected; at the same time, at least one of the top electrode, the piezoelectric layer and the bottom electrode is provided with a bump or a missing block.
  • the closed line shape of the top electrode 601 is formed by a convex line 6011, a first straight line segment 6012, a second straight line segment 6013, and a third straight line segment 6014.
  • the first straight line segment 6012 and the third straight line segment 6014 are parallel to each other; at least one top electrode bump 6016 is disposed at an upper portion of the top electrode.
  • the material of the piezoelectric layer is composed of a material having piezoelectric characteristics, for example, materials such as AlN, AlScN, ZnO, PZT, LiNO 3 , LiTaO 3 , BST, etc., which have piezoelectric characteristics or doped with a pressure. Electrical properties of the material.
  • This embodiment is applicable to the film bulk acoustic resonators shown in Figs. 1, 2, and 3.
  • the core of the tenth embodiment is that the combination of "through the asymmetrical outer contour" and “increasing the bump or missing block" can achieve better results.

Abstract

本发明提供一种薄膜体声波谐振器，包括顶电极、压电层和底电极构成的层状结构，以及基板；底电极和基板之间设有反射界面；通过限定整体或部分层状结构的形状，从而达到抑制横向驻波的目的，没有增加新的工艺，控制了器件的制作成本，使产品开发之效益最大化。

Description

一种薄膜体声波谐振器 技术领域
本发明属于谐振器领域，具体涉及一种薄膜体声波谐振器。
背景技术
随着通讯频段的演进，其所需求的频率越来越高，在高频率的需求下，其谐振器需要提供更好的Q值才能减少滤波器的损耗，得到一具更高质量的滤波响应。通过抑制横向驻波来提升Q值的方式有很多，然而大部分都要额外增加工艺的层数，这样势必会增加器件的制作成本。
发明内容
本发明要解决的技术问题是：提供一种薄膜体声波谐振器，在不额外增加工艺层数中进行改进，既能达到抑制横波效应的目的，又控制了器件的制作成本。
本发明为解决上述技术问题所采取的技术方案为：一种抑制横波效应的薄膜体声波谐振器，包括顶电极、压电层和底电极构成的层状结构，以及基板；其特征在于：所述的底电极和基板之间设有反射界面；所述的层状结构的外轮廓为一条曲线和至少一条直线线段连接而成的封闭线型。
按上述方案，所述的曲线为一凸或一凹的线型。
按上述方案，所述的直线线段为2条以上，相邻的直线线段之间的夹角角度大于0度、小于180度。
按上述方案，所述的反射界面为底电极和基板之间的空气腔。
按上述方案，所述的反射界面由高声阻与低声阻材料交叠形成。
按上述方案，所述的底电极、压电层和顶电极中，至少有一层上设有凸块或缺块；所述的凸块或缺块的个数至少为1个。
一种薄膜体声波谐振器，包括从下到上依次设置的基底、底电极、压电层和顶电极，其中基底与底电极之间设有反射界面，其特征在于：所述的底电极、压电层和顶电极中，至少有一层的形状与其它层不同。
按上述方案，所述的形状不同具体为：增加至少一个凸块。
按上述方案，所述的凸块为与所在层的原结构具有一定距离的独立凸块。
按上述方案，所述的一定距离为大于0、小于或等于100um。
按上述方案，所述的凸块为连接在所在层的原结构上的连接凸块。
按上述方案，所述的形状不同具体为：在原结构设有至少一个缺块。
按上述方案，所述的缺块设置在原结构的边缘或中间任意位置。
按上述方案，所述的缺块的高度小于或等于原结构的厚度。
按上述方案，所述的压电层采用具有压电特性的材料。
按上述方案，所述的具有压电特性的材料为AlN、AlScN、ZnO、PZT、LiNO 3或LiTaO 3。
按上述方案，所述的形状不同具体为：增加至少一个凸块，且在原结构设有至少一个缺块。
本发明的有益效果为：通过限定全部或部分层状结构的形状，从而达到抑制横向驻波的目的，没有增加新的工艺，控制了器件的制作成本，使产品开发之效益最大化。
附图说明
图1为本发明一实施例的剖视图。
图2为本发明又一实施例的剖视图。
图3为本发明再一实施例的剖视图。
图4为本发明实施例一的俯视图。
图5为本发明实施例二的俯视图。
图6为本发明实施例三的俯视图。
图7为本发明实施例四的俯视图。
图8为本发明实施例五的俯视图。
图9为本发明实施例六的俯视图。
图10为图9的一种AA剖视图。
图11为图9的另一种AA剖视图。
图12为本发明实施例七的俯视图。
图13为本发明实施例八的俯视图。
图14为本发明实施例九的俯视图。
图15为本发明实施例十的俯视图。
图中：101-顶电极，102-压电层，103-底电极，104-空气腔，105-基底；201-顶电极，202-压电层，203-底电极，204-空气腔，205-基底；301-顶电极，302-压电层，303-底电极，305-基底，306-布拉格反射镜；401-顶电极，4011-曲线，4012-直线段，402-压电层，403-底电极；501-顶电极，5011-曲线，5012-第一直线段，5013-第二直线段，502-压电 层，503-底电极；601-顶电极，6011-曲线，6012-第一直线段，6013-第二直线段，6014-第三直线段，602-压电层，603-底电极，6016-顶电极凸块；1011-顶电极外轮廓，1012-切边，1013-独立凸块，1014-连接凸块，1015-缺块，10151-镂空缺块，10152-凹槽缺块，1016-顶电极凸块。
具体实施方式
下面结合具体实例和附图对本发明做进一步说明。
图1为本发明一实施例的剖视图，薄膜体声波谐振器包括顶电极101、压电层102和底电极103构成的层状结构，其中底电极103和基板105之间还设有空气腔104，空气腔104作为反射界面。
图2为本发明又一实施例的剖视图，薄膜体声波谐振器包括顶电极201、压电层202和底电极203构成的层状结构，其中基板205中设有由蚀刻孔洞所形成的空气腔204，空气腔204作为反射界面。
图3为本发明再一实施例的剖视图，薄膜体声波谐振器包括顶电极301、压电层302和底电极303构成的层状结构，底电极303与基底305之间设有若干层由高声阻与低声阻材料交叠所形成的布拉格反射镜306，布拉格反射镜306作为反射界面。所述的高声阻和低声阻为相对概念。
以上压电层均采用AlN、AlScN、ZnO、PZT、LiNO 3或LiTaO 3等具有压电特性的材料。
实施例一：
如图4所示，本实施例包括从下到上依次形成的底电极403、压电层402和顶电极401，顶电极401外部轮廓为一条凸形的曲线4011和一条连接曲线4011两个端点的直线段4012。制作时，只要在每层工艺中限定所生长的层状结构的外轮廓即可，不额外增加工艺层数。
本实施例适用于图1、图2和图3所述的薄膜体声波谐振器。
实施例二：
本实施例的原理和结构与实施例一基本相同，其不同之处在于：如图5所示，包括从下到上依次形成的底电极503、压电层502和顶电极501。以顶电极501为例，顶电极501的外部轮廓为一条凸形的曲线5011、第一直线段5012和第二直线段5013三条线连接构成。第一直线段5012和第二直线段5013之间的夹角大于0度、小于180度。
本实施例适用于图1、图2和图3所述的薄膜体声波谐振器。
实施例三：
本实施例的原理和结构与实施例一基本相同，其不同之处在于：如图6所示，包括从下到上依次形成的底电极603、压电层602和顶电极601。以顶电极601为例，顶电极601的封闭线型由一条凸形的曲线6011、第一直线段6012、第二直线段6013和第三直线段6014四条线连接构成。第一直线段6012和第三直线段6014互相平行。
本实施例适用于图1、图2和图3所述的薄膜体声波谐振器。
实施例一至三的设计思想在于：通过设计仅有一个曲线边以及任意平边所组成的形状，形成一非对称的谐振器，横向驻波在非对称的压电层内进行反射将大幅减少与原波在同一方向上，从而让横向驻波的能量达到衰减，最终达到提升Q值的效果。一个曲线边加上任意平边形成的封闭图形，其在设计上可通过调节不同的任意平边与夹角，以适用于不同要求(例如Q值要求、形状要求、体积要求等)的谐振器，在设计上更具弹性，可达到抑制横向驻波的效果也更具弹性。
实施例一至三中，所述的层状结构的外轮廓为一条曲线和至少一条直线线段连接而成的封闭线型。所述的曲线为一凸或一凹的线型，例如圆弧形、椭圆弧形、抛物线形或任意光滑曲线，但只允许有一个弯曲方向。所述的层状结构的外轮廓只有一个曲线面，其它均为平面，从而形成一个非对称的几何图形，使得形成的横向驻波在反射回来时均不在同一位置，从而分散和抵消；没有增加新的工艺，控制了器件的制作成本，使产品开发之效益最大化。
实施例四：
本实施例提供一种薄膜体声波谐振器，如图7所示，包括从下到上依次设置的基底105、底电极103、压电层102和顶电极101，其中基底105与底电极103之间设有反射界面，在所述的底电极103、压电层102和顶电极101中的至少一层，增加至少一个与所在层的原结构材料相同的凸块；所述的凸块与所在层的原结构厚度一致。那么，凸块的制备工艺与所在层的其它结构是一样的，只需要在制备时多生长一块凸块即可。
本实施例中，所述的凸块为与所在层的原结构具有一定距离(大于0、小于或等于100um)的独立凸块。进一步的说明，独立凸块可以并不仅限于方形，每条边的长度为1nm-100um，。
以顶电极101为例，在顶电极101同一层，设置独立凸块1013，独立凸块1013与顶电极外轮廓1011之间的距离大于0、小于或等于100um。另外，还可以在顶电极101 上设置一个独立凸块1013，在压电层102设置2个独立凸块，在底电极103设置3个独立凸块。每层的独立凸块数量不限定，独立凸块设置的层和层数均不限定。
所述的压电层的材料为具有压电特性的材料所构成，例如：AlN、AlScN、ZnO、PZT、LiNO 3、LiTaO 3、BST……等具备压电特性的材料或参杂形成具有压电特性的材料。
本实施例对图1、图2和图3所示的薄膜体声波谐振器均适用。
实施例五：
本实施例的结构与原理与实施例四相同，其不同之处在于：如图8所示，所述的凸块为连接在所在层的原结构上的连接凸块。连接凸块的厚度与其所在层一致。连接凸块的制备工艺与所在层的其它结构是一样的，只需要在制备时控制外轮廓形状即可。
所述的连接凸块的最长尺寸为1nm-100um。
以顶电极101为例，在顶电极外轮廓1011上的任意位置连接3个连接凸块1014。另外，还可以在顶电极101上连接一个连接凸块1014，在压电层102上连接2个连接凸块，在底电极103上连接3个连接凸块。每层的连接凸块数量不限定，连接凸块设置的层和层数均不限定。
所述的压电层的材料为具有压电特性的材料所构成，例如：AlN、AlScN、ZnO、PZT、LiNO 3、LiTaO 3、BST……等具备压电特性的材料或参杂形成具有压电特性的材料。
本实施例对图1、图2和图3所示的薄膜体声波谐振器均适用。
实施例六：
本实施例提供一种薄膜体声波谐振器，包括从下到上依次设置的基底105、底电极103、压电层102和顶电极101，其中基底105与底电极103之间设有反射界面，在所述的底电极103、压电层102和顶电极101中的至少一层设有缺块，缺块位于原结构中，并靠近有源区边缘。有源区的明确定义是：顶电极101，压电层102及底电极103重叠的区域，而且重叠的区域下有反射界面。
以顶电极101为例，如图9所示，在顶电极101的中间任意位置设有至少一个缺块1015。缺块1015的高度小于或等于原结构的厚度。当缺块1015的高度等于原结构的厚度时，如图10所示，缺块为镂空缺块10151；当缺块1015的高度小于原结构的厚度时，如图11所示，缺块为凹槽缺块10152。
本实施例对图1、图2和图3所示的薄膜体声波谐振器均适用。
实施例七：
本实施例提供一种薄膜体声波谐振器，如图12所示，包括从下到上依次设置的基 底105、底电极103、压电层102和顶电极101，其中基底105与底电极103之间设有反射界面，在所述的底电极103、压电层102和顶电极101中的至少一层设有缺块，本实施例中，缺块设置在原结构的边缘，在原结构的外轮廓设有至少一条切边，即相当于切去原结构边缘的一块从而构成缺块。因此，只要在每层工艺中限定所生长的层状结构的外轮廓即可，无需另外增加工序。
以顶电极101为例，顶电极外轮廓1011上设有3条切边1012，每条切边1012的长度可以相同，也可以不同。另外，还可以在顶电极101上设置一条切边，在压电层102设置2条切边，在底电极103设置3条切边。每层的切边数量不限定，切边设置的层和层数均不限定。所述的切边长度为1nm-100um。
另外，位于原结构边缘的缺块并不仅限于直线的切边，也可以是其它的形状，例如一个缺角等。
所述的压电层的材料为具有压电特性的材料所构成，例如：AlN、AlScN、ZnO、PZT、LiNO 3、LiTaO 3、BST……等具备压电特性的材料或参杂形成具有压电特性的材料。
本实施例对图1、图2和图3所示的薄膜体声波谐振器均适用。
实施例四至七的核心点在于：在不额外增加工艺层数的前提下，只限制至少一层的形状，例如增加一个凸块或缺块从而调整顶电极、压电层或底电极的形状，从而让横向波的能量衰减，降低横向波的反射能量，提高Q值。
实施例八：
本实施例提供一种薄膜体声波谐振器，如图13所示，包括从下到上依次设置的底电极103、压电层102和顶电极101，在所述的底电极103、压电层102和顶电极101中的至少一层设有缺块，另外在顶电极上部设置顶电极凸块1016。本实施例中，缺块设置在原结构的边缘，在原结构的外轮廓设有至少一条切边，即相当于切去原结构边缘的一块从而构成缺块。
以顶电极101为例，顶电极外轮廓1011上设有3条切边1012，每条切边1012的长度可以相同，也可以不同。另外，还可以在顶电极101上设置一条切边，在压电层102设置2条切边，在底电极103设置3条切边。每层的切边数量不限定，切边设置的层和层数均不限定。所述的切边长度为1nm-100um。
本实施例中顶电极凸块1016设置3块，周向均布在顶电极的上部，顶电极凸块1016的个数和排布方式可以任意。
所述的压电层的材料为具有压电特性的材料所构成，例如：AlN、AlScN、ZnO、 PZT、LiNO 3、LiTaO 3、BST……等具备压电特性的材料或参杂形成具有压电特性的材料。
本实施例对图1、图2和图3所示的薄膜体声波谐振器均适用。
实施例九：
本实施例提供一种薄膜体声波谐振器，如图14所示，包括从下到上依次设置的底电极103、压电层102和顶电极101，在所述的底电极103、压电层102和顶电极101中的至少一层设有缺块，另外在顶电极上部设置至少一块顶电极凸块1016。本实施例中，缺块位于原结构中，并靠近有源区边缘。有源区的明确定义是：顶电极101，压电层102及底电极103重叠的区域，而且重叠的区域下有反射界面。
以顶电极101为例，在顶电极101的中间任意位置设有至少一个缺块1015。缺块1015的高度小于或等于原结构的厚度。本实施例中顶电极凸块1016设置3块，周向均布在顶电极的上部，顶电极凸块1016的个数和排布方式可以任意。
所述的压电层的材料为具有压电特性的材料所构成，例如：AlN、AlScN、ZnO、PZT、LiNO 3、LiTaO 3、BST……等具备压电特性的材料或参杂形成具有压电特性的材料。
本实施例对图1、图2和图3所示的薄膜体声波谐振器均适用。
实施例八和实施例九的核心在于：结合了凸块和缺块的特征，从而达到更好的效果。
实施例十(最佳实施例)：
本实施例的薄膜体声波谐振器，包括顶电极、压电层和底电极构成的层状结构，以及基板；所述的底电极和基板之间设有反射界面；所述的层状结构的外轮廓为一条曲线和至少一条直线线段连接而成的封闭线型；同时在顶电极、压电层和底电极中的至少一层，设有凸块或缺块。
如图15所示，以顶电极601为例，顶电极601的封闭线型由一条凸形的曲线6011、第一直线段6012、第二直线段6013和第三直线段6014四条线连接构成。第一直线段6012和第三直线段6014互相平行；顶电极上部设置有至少一块顶电极凸块6016。
所述的压电层的材料为具有压电特性的材料所构成，例如：AlN、AlScN、ZnO、PZT、LiNO 3、LiTaO 3、BST……等具备压电特性的材料或参杂形成具有压电特性的材料。
本实施例对图1、图2和图3所示的薄膜体声波谐振器均适用。
实施例十的核心在于：组合了“通过不对称的外轮廓”和“增加凸块或缺块”两种方式，从而达到更好的效果。
以上实施例仅用于说明本发明的设计思想和特点，其目的在于使本领域内的技术人员能够了解本发明的内容并据以实施，本发明的保护范围不限于上述实施例。所以，凡 依据本发明所揭示的原理、设计思路所作的等同变化或修饰，均在本发明的保护范围之内。

Claims (20)

  1. 一种薄膜体声波谐振器，包括顶电极、压电层和底电极构成的层状结构，以及基板；其特征在于：所述的底电极和基板之间设有反射界面；所述的层状结构的外轮廓为一条曲线和至少一条直线线段连接而成的封闭线型。
  2. 根据权利要求1所述的薄膜体声波谐振器，其特征在于：所述的曲线为一凸或一凹的线型。
  3. 根据权利要求1所述的薄膜体声波谐振器，其特征在于：所述的直线线段为2条以上，相邻的直线线段之间的夹角角度大于0度、小于180度。
  4. 根据权利要求1所述的薄膜体声波谐振器，其特征在于：所述的直线线段为3条以上，其中至少有两条直线线段互相平行。
  5. 根据权利要求1所述的薄膜体声波谐振器，其特征在于：所述的反射界面为底电极和基板之间的空气腔。
  6. 根据权利要求1所述的薄膜体声波谐振器，其特征在于：所述的反射界面由高声阻与低声阻材料交叠形成。
  7. 根据权利要求1所述的薄膜体声波谐振器，其特征在于：所述的压电层采用具有压电特性的材料。
  8. 根据权利要求7所述的薄膜体声波谐振器，其特征在于：所述的具有压电特性的材料为AlN、AlScN、ZnO、PZT、LiNO 3或LiTaO 3。
  9. 根据权利要求1所述的薄膜体声波谐振器，其特征在于：所述的底电极、压电层和顶电极中，至少有一层上设有凸块或缺块；所述的凸块或缺块的个数至少为1个。
  10. 一种薄膜体声波谐振器，包括从下到上依次设置的基底、底电极、压电层和顶电极，其中基底与底电极之间设有反射界面，其特征在于：所述的底电极、压电层和顶电极中，至少有一层的形状与其它层不同。
  11. 根据权利要求10所述的薄膜体声波谐振器，其特征在于：所述的形状不同具体为：增加至少一个凸块。
  12. 根据权利要求11所述的薄膜体声波谐振器，其特征在于：所述的凸块为与所在层的原结构具有一定距离的独立凸块。
  13. 根据权利要求12所述的薄膜体声波谐振器，其特征在于：所述的一定距离为大于0、且小于或等于100um。
  14. 根据权利要求11所述的薄膜体声波谐振器，其特征在于：所述的凸块为连接在所在层的原结构上的连接凸块。
  15. 根据权利要求10所述的薄膜体声波谐振器，其特征在于：所述的形状不同具体为：在原结构设有至少一个缺块。
  16. 根据权利要求15所述的薄膜体声波谐振器，其特征在于：所述的缺块设置在原结构的边缘或中间任意位置。
  17. 根据权利要求15所述的薄膜体声波谐振器，其特征在于：所述的缺块的高度小于或等于原结构的厚度。
  18. 根据权利要求17所述的薄膜体声波谐振器，其特征在于：所述的压电层采用具有压电特性的材料。
  19. 根据权利要求18所述的薄膜体声波谐振器，其特征在于：所述的压电层的材料为AlN、AlScN、ZnO、PZT、LiNO 3、LiTaO 3或BST中的一种。
  20. 根据权利要求10所述的薄膜体声波谐振器，其特征在于：所述的形状不同具体为：增加至少一个凸块，且在原结构设有至少一个缺块。
PCT/CN2018/125238 2018-01-19 2018-12-29 一种薄膜体声波谐振器 WO2019141073A1 (zh)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2020555286A JP7245849B2 (ja) 2018-01-19 2018-12-29 薄膜圧電共振器
EP18901250.3A EP3723285A4 (en) 2018-01-19 2018-12-29 VOLUME FILM ACOUSTIC RESONATOR
KR1020207018209A KR102455391B1 (ko) 2018-01-19 2018-12-29 필름 벌크 음향 공진기
US16/544,984 US11539340B2 (en) 2018-01-19 2019-08-20 Film bulk acoustic resonator
US18/058,271 US20230091905A1 (en) 2018-01-19 2022-11-23 Acoustic device and method for manufacturing the same

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
CN201820096098.9U CN207869078U (zh) 2018-01-19 2018-01-19 一种抑制横波效应的薄膜体声波谐振器
CN201810051954.3A CN108134588B (zh) 2018-01-19 2018-01-19 一种抑制横波效应的薄膜体声波谐振器
CN201820096098.9 2018-01-19
CN201810051954.3 2018-01-19
CN201810113583.7 2018-02-05
CN201820198355.XU CN207869079U (zh) 2018-02-05 2018-02-05 一种薄膜体声波谐振器
CN201810113583.7A CN108134589B (zh) 2018-02-05 2018-02-05 一种薄膜体声波谐振器
CN201820198355.X 2018-02-05

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US16/544,984 Continuation US11539340B2 (en) 2018-01-19 2019-08-20 Film bulk acoustic resonator

Publications (1)

Publication Number Publication Date
WO2019141073A1 true WO2019141073A1 (zh) 2019-07-25

Family

ID=67301690

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/125238 WO2019141073A1 (zh) 2018-01-19 2018-12-29 一种薄膜体声波谐振器

Country Status (5)

Country Link
US (1) US11539340B2 (zh)
EP (1) EP3723285A4 (zh)
JP (1) JP7245849B2 (zh)
KR (1) KR102455391B1 (zh)
WO (1) WO2019141073A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT202100013004A1 (it) * 2021-05-19 2022-11-19 Spectron Microsystems S R L Dispositivo risonatore

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1364339A (zh) * 1999-07-19 2002-08-14 诺基亚有限公司 谐振器结构和包括这种谐振器结构的滤波器
CN1794572A (zh) * 2004-12-22 2006-06-28 安捷伦科技有限公司 用选择性金属蚀刻提高声共振器的性能
CN1845453A (zh) * 2005-04-06 2006-10-11 安捷伦科技有限公司 使用填充凹进区的声谐振器的性能增强
US20140125202A1 (en) * 2009-11-25 2014-05-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave (baw) resonator structure having an electrode with a cantilevered portion and a piezoelectric layer with multiple dopants
CN108134589A (zh) * 2018-02-05 2018-06-08 武汉衍熙微器件有限公司 一种薄膜体声波谐振器
CN108134588A (zh) * 2018-01-19 2018-06-08 武汉衍熙微器件有限公司 一种抑制横波效应的薄膜体声波谐振器
CN207869079U (zh) * 2018-02-05 2018-09-14 武汉衍熙微器件有限公司 一种薄膜体声波谐振器
CN207869078U (zh) * 2018-01-19 2018-09-14 武汉衍熙微器件有限公司 一种抑制横波效应的薄膜体声波谐振器

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4441843B2 (ja) 2001-06-15 2010-03-31 宇部興産株式会社 薄膜音響共振器
JP2005159402A (ja) * 2003-11-20 2005-06-16 Matsushita Electric Ind Co Ltd 音響共振器
JP4488167B2 (ja) * 2003-12-18 2010-06-23 Ｔｄｋ株式会社 フィルタ
US20050248420A1 (en) 2004-05-07 2005-11-10 Qing Ma Forming integrated plural frequency band film bulk acoustic resonators
US7388454B2 (en) 2004-10-01 2008-06-17 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using alternating frame structure
JP4696597B2 (ja) * 2005-03-03 2011-06-08 宇部興産株式会社 薄膜圧電共振器およびそれを用いた薄膜圧電フィルタ
JP5040172B2 (ja) * 2005-05-19 2012-10-03 宇部興産株式会社 薄膜圧電共振器と薄膜圧電フィルタ
US7889027B2 (en) * 2005-09-09 2011-02-15 Sony Corporation Film bulk acoustic resonator shaped as an ellipse with a part cut off
US20070139140A1 (en) 2005-12-20 2007-06-21 Rao Valluri R Frequency tuning of film bulk acoustic resonators (FBAR)
JP4877966B2 (ja) 2006-03-08 2012-02-15 日本碍子株式会社 圧電薄膜デバイス
US7629865B2 (en) * 2006-05-31 2009-12-08 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters
WO2009011022A1 (ja) 2007-07-13 2009-01-22 Fujitsu Limited 圧電薄膜共振素子及びこれを用いた回路部品
CN101796726B (zh) * 2007-08-24 2014-04-02 太阳诱电株式会社 压电薄膜谐振器、使用该压电薄膜谐振器的滤波器、使用该滤波器的双工器、以及使用该滤波器或该双工器的通信设备
JP5184179B2 (ja) * 2008-03-28 2013-04-17 京セラ株式会社 薄膜共振子、フィルタおよびデュプレクサ
US9520856B2 (en) * 2009-06-24 2016-12-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
US9136819B2 (en) * 2012-10-27 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator having piezoelectric layer with multiple dopants
US8791776B2 (en) * 2011-01-19 2014-07-29 Wei Pang Acoustic wave resonator having a gasket
US8896395B2 (en) * 2011-09-14 2014-11-25 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having multiple lateral features
US9525399B2 (en) * 2011-10-31 2016-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Planarized electrode for improved performance in bulk acoustic resonators
KR101918031B1 (ko) 2013-01-22 2018-11-13 삼성전자주식회사 스퓨리어스 공진을 감소시키는 공진기 및 공진기 제작 방법
US9571063B2 (en) 2014-10-28 2017-02-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator device with structures having different apodized shapes
CN106849897B (zh) 2015-12-03 2020-04-10 中芯集成电路（宁波）有限公司 薄膜体声波谐振器及其制造方法
KR102642910B1 (ko) 2016-05-18 2024-03-04 삼성전기주식회사 음향 공진기 및 그 제조 방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1364339A (zh) * 1999-07-19 2002-08-14 诺基亚有限公司 谐振器结构和包括这种谐振器结构的滤波器
CN1794572A (zh) * 2004-12-22 2006-06-28 安捷伦科技有限公司 用选择性金属蚀刻提高声共振器的性能
CN1845453A (zh) * 2005-04-06 2006-10-11 安捷伦科技有限公司 使用填充凹进区的声谐振器的性能增强
US20140125202A1 (en) * 2009-11-25 2014-05-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave (baw) resonator structure having an electrode with a cantilevered portion and a piezoelectric layer with multiple dopants
CN108134588A (zh) * 2018-01-19 2018-06-08 武汉衍熙微器件有限公司 一种抑制横波效应的薄膜体声波谐振器
CN207869078U (zh) * 2018-01-19 2018-09-14 武汉衍熙微器件有限公司 一种抑制横波效应的薄膜体声波谐振器
CN108134589A (zh) * 2018-02-05 2018-06-08 武汉衍熙微器件有限公司 一种薄膜体声波谐振器
CN207869079U (zh) * 2018-02-05 2018-09-14 武汉衍熙微器件有限公司 一种薄膜体声波谐振器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3723285A4 *

Also Published As

Publication number Publication date
JP2021508999A (ja) 2021-03-11
US11539340B2 (en) 2022-12-27
EP3723285A4 (en) 2020-12-30
US20190372548A1 (en) 2019-12-05
JP7245849B2 (ja) 2023-03-24
KR20200093594A (ko) 2020-08-05
KR102455391B1 (ko) 2022-10-17
EP3723285A1 (en) 2020-10-14

Similar Documents

Publication Publication Date Title
CN108134588B (zh) 一种抑制横波效应的薄膜体声波谐振器
CN108134589B (zh) 一种薄膜体声波谐振器
CN101924529B (zh) 压电谐振器结构
US6693500B2 (en) Film bulk acoustic resonator with improved lateral mode suppression
CN103329436B (zh) 弹性表面波装置
US20180212581A1 (en) Elastic wave device and manufacturing method thereof
CN111092605B (zh) 具有声学干涉阵列的体声波谐振器及组、滤波器及电子设备
US20170170801A1 (en) Bulk acoustic wave resonator with a modified outside stack portion
WO2019141073A1 (zh) 一种薄膜体声波谐振器
CN111262540A (zh) 体声波谐振器及其制造方法、滤波器及电子设备
CN207869079U (zh) 一种薄膜体声波谐振器
US11411548B2 (en) Bulk acoustic wave resonator and bulk acoustic wave filter
CN207869078U (zh) 一种抑制横波效应的薄膜体声波谐振器
WO2020125353A1 (zh) 带沟槽的体声波谐振器、滤波器和电子设备
CN204885449U (zh) 滤波超材料、天线罩和天线
WO2021036758A1 (zh) 一种体声波谐振器
CN209659252U (zh) 谐振器及半导体器件
CN210157156U (zh) 一种体声波谐振器
WO2022007234A1 (zh) 谐振器
CN204425293U (zh) 用于无线通信系统的多层压电薄膜体声波谐振器
JP7348794B2 (ja) バルク弾性波共振器およびその製造方法
CN216414272U (zh) 一种压电薄膜声学谐振器
WO2024007404A1 (zh) 一种薄膜体声波谐振器
WO2020019246A1 (zh) 体声波谐振器及其制作方法、滤波器
CN219304811U (zh) 谐振器

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18901250

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20207018209

Country of ref document: KR

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 2020555286

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2018901250

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2018901250

Country of ref document: EP

Effective date: 20200709

NENP Non-entry into the national phase

Ref country code: DE