JP5089907B2 - 充填された凹部領域を用いた音響共振器の性能向上 - Google Patents
充填された凹部領域を用いた音響共振器の性能向上 Download PDFInfo
- Publication number
- JP5089907B2 JP5089907B2 JP2006103882A JP2006103882A JP5089907B2 JP 5089907 B2 JP5089907 B2 JP 5089907B2 JP 2006103882 A JP2006103882 A JP 2006103882A JP 2006103882 A JP2006103882 A JP 2006103882A JP 5089907 B2 JP5089907 B2 JP 5089907B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- filling
- adjacent
- acoustic resonator
- fbar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000007772 electrode material Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000006185 dispersion Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 238000002161 passivation Methods 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 239000000945 filler Substances 0.000 claims 2
- 239000010408 film Substances 0.000 description 13
- 230000001976 improved effect Effects 0.000 description 13
- 238000007373 indentation Methods 0.000 description 8
- 239000010931 gold Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000008093 supporting effect Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02149—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
本特許出願は、本発明と同じ譲受人に譲渡され、2004年6月14に出願され、「ACOUSTIC RESONATOR PERFORMANCE ENHANCEMENT USING SELECTIVE METAL ETCH」と題する米国特許出願第10/867,540号(代理人整理番号第10040878−1号)に関連する。
42、72、102 基板
44、74、104 くぼみ
46、76、106 第1の電極
48、78、108 圧電(PZ)層
50、80 第2の電極
60、90 充填領域
109、113 フォトマスク
110 電極材料
111 凹部領域
120 充填材料
Claims (22)
- 基板と、
前記基板に隣接し、外側周辺部を有する第1の電極と、
前記第1の電極に隣接する圧電層と、
前記圧電層に隣接し、外側周辺部を有する第2の電極とを含み、
前記第1の電極、及び前記第2の電極のうちの一方が、充填領域を形成するために材料で充填された凹部要素を含み、
前記第1の電極、及び前記第2の電極のうちの一方にある前記充填領域が、前記外側周辺部に隣接し、前記充填領域の材料が、前記第2の電極に使用される材料とは異なる分散特性を有する、音響共振器。 - くぼみが前記基板に形成され、前記くぼみが、くぼみ周辺部を有し、前記第1の電極が前記くぼみにまたがっている、請求項1に記載の音響共振器。
- 前記第1の電極、及び前記第2の電極のうちの一方にある前記充填領域が、前記くぼみ周辺部の外側にある、請求項2に記載の音響共振器。
- 前記第1の電極、及び前記第2の電極のうちの一方にある前記充填領域が、前記くぼみ周辺部の内側にある、請求項2に記載の音響共振器。
- 前記第1の電極、及び前記第2の電極のうちの一方にある前記充填領域が、前記くぼみ周辺部に部分的に重なる、請求項2に記載の音響共振器。
- 音響ミラーが前記基板に形成され、前記第1の電極が前記音響ミラーにまたがる、請求項1に記載の音響共振器。
- 前記第2の電極に隣接するパッシベーション層を更に含み、前記パッシベーション層が、第1の平面に平行である第2の平面内に位置する、請求項1〜6の何れかに記載の音響共振器。
- 前記充填材料が、誘電体、金属、金属合金、圧電物質、Mo、Pt、Al、Cu、W、Au、Ag、ポリイミド、BCB、SiO2、Si3N4、AlN、ZnO、LiNbO3、PZT、LiTaO3、及びAl2O3からなるグループから選択された材料である、請求項1に記載の音響共振器。
- 前記充填領域が、前記第1の電極、及び前記第2の電極のうちの一方の外側周辺部の大部分の周りに延在する、請求項1〜8の何れかに記載の音響共振器。
- 前記充填領域が、前記第1の電極、及び前記第2の電極のうちの一方において、数百〜数千オングストロームのオーダである深さ、及び1マイクロメートル〜数十マイクロメートル以下のオーダの幅を有する、請求項1〜9の何れかに記載の音響共振器。
- 前記充填領域が、前記第1及び第2の電極の一方の外側周辺部から、ゼロ〜数十マイクロメートルだけオフセットしている、請求項1〜10の何れかに記載の音響共振器。
- 第1の表面を有する基板と、
前記基板の前記第1の表面に隣接する第1の電極と、
前記第1の電極に隣接する圧電材料の層と、
前記圧電材料の層に隣接し、第1の平面内に位置すると共に外側周辺部を有する第2の電極とを含み、
前記第2の電極が、充填領域を形成するために材料で充填された凹部要素を含み、
前記第2の電極にある前記充填領域が、前記外側周辺部に隣接し、前記第2の電極が、前記充填領域の材料とは異なる材料からなり、前記充填領域の材料が、前記音響共振器の中心部における音響インピーダンスに比べて前記充填領域の音響インピーダンスを増加させるように、電極材料より高密度である、音響共振器。 - くぼみ周辺部を有するくぼみが、前記基板の第1の表面に形成され、前記第1の電極が前記くぼみにまたがっている、請求項12に記載の音響共振器。
- 音響ミラーが前記基板の第1の表面に形成され、前記第1の電極が前記音響ミラーにまたがっている、請求項12に記載の音響共振器。
- 前記第2の電極の前記充填領域が、前記くぼみ周辺部の外側にある、請求項12又は13に記載の音響共振器。
- 前記第2の電極の前記充填領域が、前記くぼみ周辺部の内側にある、請求項12又は13に記載の音響共振器。
- 前記第2の電極の前記充填領域が、前記くぼみ周辺部に部分的に重なる、請求項12又は13に記載の音響共振器。
- 基板を準備し、
前記基板に隣接する第1の電極を製造し、
前記第1の電極に隣接する圧電層を製造し、
前記圧電層に隣接し、第1の厚さまでの第2の電極を形成するように、電極材料を堆積し、
前記第2の電極の上に第1のフォトマスクを堆積し、
第2の厚さまでの前記第2の電極を形成するように、追加の電極材料を堆積し、
前記フォトマスクを除去して、前記第2の電極に凹部領域を露呈し、及び
前記凹部領域を充填材料で充填することを含み、
前記第2の電極が外側周辺部を有し、前記凹部領域が、前記外側周辺部に隣接し、前記充填材料が、前記第2の電極に使用される材料とは異なる分散特性を有する、音響共振器を製造するための方法。 - 前記凹部領域を充填する前に、前記第2の電極の上に第2のフォトマスクを堆積することを更に含む、請求項18に記載の方法。
- 前記基板にくぼみを形成することを更に含む、請求項18又は19に記載の方法。
- 前記凹部領域を充填することが、誘電体、金属、金属合金、圧電物質、Mo、Pt、Al、Cu、W、Au、Ag、ポリイミド、BCB、SiO2、Si3N4、AlN、ZnO、LiNbO3、PZT、LiTaO3、及びAl2O3からなるグループから選択された材料で充填することを更に含む、請求項18〜20の何れかに記載の方法。
- 基板を準備し、
前記基板に隣接する第1の電極を製造し、
前記第1の電極に隣接する圧電層を製造し、
第2の電極を形成するために電極材料を堆積し、
前記第2の電極の上に第1のフォトマスクを堆積し、
前記第2の電極に凹部領域を形成するために、前記第2の電極をエッチングし、及び
前記凹部領域を充填材料で充填することを含み、
前記第2の電極が外側周辺部を有し、前記凹部領域が、前記外側周辺部に隣接し、前記充填材料が、前記第2の電極に使用される材料とは異なる分散特性を有する、音響共振器を製造するための方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/100311 | 2005-04-06 | ||
US11/100,311 US7369013B2 (en) | 2005-04-06 | 2005-04-06 | Acoustic resonator performance enhancement using filled recessed region |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006295924A JP2006295924A (ja) | 2006-10-26 |
JP5089907B2 true JP5089907B2 (ja) | 2012-12-05 |
Family
ID=36292807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006103882A Expired - Fee Related JP5089907B2 (ja) | 2005-04-06 | 2006-04-05 | 充填された凹部領域を用いた音響共振器の性能向上 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7369013B2 (ja) |
JP (1) | JP5089907B2 (ja) |
KR (1) | KR101209961B1 (ja) |
CN (1) | CN1845453B (ja) |
GB (1) | GB2425008B (ja) |
Families Citing this family (108)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5532357A (en) | 1995-06-07 | 1996-07-02 | The Dupont Merck Pharmaceutical Company | Method for preparing N-monosubstituted and N,N'-disubstituted unsymmetrical cyclic ureas |
US7275292B2 (en) | 2003-03-07 | 2007-10-02 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method for fabricating an acoustical resonator on a substrate |
US7388454B2 (en) | 2004-10-01 | 2008-06-17 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using alternating frame structure |
US8981876B2 (en) * | 2004-11-15 | 2015-03-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters having frame elements |
US7202560B2 (en) | 2004-12-15 | 2007-04-10 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Wafer bonding of micro-electro mechanical systems to active circuitry |
US7791434B2 (en) | 2004-12-22 | 2010-09-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric |
US7369013B2 (en) * | 2005-04-06 | 2008-05-06 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using filled recessed region |
US7868522B2 (en) * | 2005-09-09 | 2011-01-11 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Adjusted frequency temperature coefficient resonator |
US7737807B2 (en) * | 2005-10-18 | 2010-06-15 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating series-connected decoupled stacked bulk acoustic resonators |
US7675390B2 (en) | 2005-10-18 | 2010-03-09 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating single decoupled stacked bulk acoustic resonator |
US7463499B2 (en) | 2005-10-31 | 2008-12-09 | Avago Technologies General Ip (Singapore) Pte Ltd. | AC-DC power converter |
US20070210748A1 (en) * | 2006-03-09 | 2007-09-13 | Mark Unkrich | Power supply and electronic device having integrated power supply |
US7746677B2 (en) * | 2006-03-09 | 2010-06-29 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | AC-DC converter circuit and power supply |
US7479685B2 (en) | 2006-03-10 | 2009-01-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Electronic device on substrate with cavity and mitigated parasitic leakage path |
US20080283944A1 (en) * | 2007-05-18 | 2008-11-20 | Geefay Frank S | PHOTOSTRUCTURABLE GLASS MICROELECTROMECHANICAL (MEMs) DEVICES AND METHODS OF MANUFACTURE |
CN101796726B (zh) * | 2007-08-24 | 2014-04-02 | 太阳诱电株式会社 | 压电薄膜谐振器、使用该压电薄膜谐振器的滤波器、使用该滤波器的双工器、以及使用该滤波器或该双工器的通信设备 |
US7791435B2 (en) | 2007-09-28 | 2010-09-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Single stack coupled resonators having differential output |
JP5279068B2 (ja) * | 2008-02-15 | 2013-09-04 | 太陽誘電株式会社 | 圧電薄膜共振子、フィルタ、通信モジュール、および通信装置 |
JP5563739B2 (ja) * | 2008-02-20 | 2014-07-30 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタ、デュープレクサ、通信モジュール、および通信装置 |
KR101352177B1 (ko) * | 2008-04-24 | 2014-01-15 | 콘트리아 산 리미티드 라이어빌리티 컴퍼니 | Baw 공진기 및 baw 공진기 형성 방법 |
US7795781B2 (en) * | 2008-04-24 | 2010-09-14 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator with reduced energy loss |
US7855618B2 (en) | 2008-04-30 | 2010-12-21 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator electrical impedance transformers |
AU2009202863B2 (en) * | 2008-07-14 | 2012-02-16 | Aristocrat Technologies Australia Pty Limited | Gaming system and method of gaming |
WO2010054099A1 (en) | 2008-11-07 | 2010-05-14 | Greenray Industries, Inc. | Crystal oscillator with reduced acceleration sensitivity |
CN101477083B (zh) * | 2009-01-09 | 2010-12-01 | 重庆大学 | 具有主动抑制声能损失功能的薄膜体声波传感器及方法 |
US8291559B2 (en) * | 2009-02-24 | 2012-10-23 | Epcos Ag | Process for adapting resonance frequency of a BAW resonator |
US9673778B2 (en) | 2009-06-24 | 2017-06-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Solid mount bulk acoustic wave resonator structure comprising a bridge |
US9520856B2 (en) | 2009-06-24 | 2016-12-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator structure having an electrode with a cantilevered portion |
US8248185B2 (en) * | 2009-06-24 | 2012-08-21 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator structure comprising a bridge |
US8902023B2 (en) | 2009-06-24 | 2014-12-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator structure having an electrode with a cantilevered portion |
US8427337B2 (en) * | 2009-07-10 | 2013-04-23 | Aclara RF Systems Inc. | Planar dipole antenna |
US8692631B2 (en) * | 2009-10-12 | 2014-04-08 | Hao Zhang | Bulk acoustic wave resonator and method of fabricating same |
US8456257B1 (en) * | 2009-11-12 | 2013-06-04 | Triquint Semiconductor, Inc. | Bulk acoustic wave devices and method for spurious mode suppression |
US9450561B2 (en) | 2009-11-25 | 2016-09-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave (BAW) resonator structure having an electrode with a cantilevered portion and a piezoelectric layer with varying amounts of dopant |
US9219464B2 (en) | 2009-11-25 | 2015-12-22 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave (BAW) resonator structure having an electrode with a cantilevered portion and a piezoelectric layer with multiple dopants |
US8193877B2 (en) | 2009-11-30 | 2012-06-05 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Duplexer with negative phase shifting circuit |
US8673121B2 (en) | 2010-01-22 | 2014-03-18 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method of fabricating piezoelectric materials with opposite C-axis orientations |
US8796904B2 (en) | 2011-10-31 | 2014-08-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer |
US9243316B2 (en) | 2010-01-22 | 2016-01-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method of fabricating piezoelectric material with selected c-axis orientation |
JP5510465B2 (ja) * | 2010-02-09 | 2014-06-04 | 株式会社村田製作所 | 圧電デバイス、圧電デバイスの製造方法 |
US9479139B2 (en) | 2010-04-29 | 2016-10-25 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Resonator device including electrode with buried temperature compensating layer |
US8962443B2 (en) | 2011-01-31 | 2015-02-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor device having an airbridge and method of fabricating the same |
US9148117B2 (en) | 2011-02-28 | 2015-09-29 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge and frame elements |
US9571064B2 (en) * | 2011-02-28 | 2017-02-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator device with at least one air-ring and frame |
US9083302B2 (en) | 2011-02-28 | 2015-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator |
US9099983B2 (en) | 2011-02-28 | 2015-08-04 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator device comprising a bridge in an acoustic reflector |
US9203374B2 (en) | 2011-02-28 | 2015-12-01 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator comprising a bridge |
US9154112B2 (en) | 2011-02-28 | 2015-10-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge |
US9991871B2 (en) * | 2011-02-28 | 2018-06-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator comprising a ring |
US9136818B2 (en) | 2011-02-28 | 2015-09-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked acoustic resonator comprising a bridge |
US9425764B2 (en) * | 2012-10-25 | 2016-08-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having composite electrodes with integrated lateral features |
US9048812B2 (en) | 2011-02-28 | 2015-06-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer |
US10284173B2 (en) * | 2011-02-28 | 2019-05-07 | Avago Technologies International Sales Pte. Limited | Acoustic resonator device with at least one air-ring and frame |
US9444426B2 (en) * | 2012-10-25 | 2016-09-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having integrated lateral feature and temperature compensation feature |
US9246473B2 (en) * | 2011-03-29 | 2016-01-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising collar, frame and perimeter distributed bragg reflector |
US8575820B2 (en) | 2011-03-29 | 2013-11-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked bulk acoustic resonator |
US9748918B2 (en) | 2013-02-14 | 2017-08-29 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising integrated structures for improved performance |
US9590165B2 (en) | 2011-03-29 | 2017-03-07 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising aluminum scandium nitride and temperature compensation feature |
US9917567B2 (en) | 2011-05-20 | 2018-03-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising aluminum scandium nitride |
US8350445B1 (en) | 2011-06-16 | 2013-01-08 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising non-piezoelectric layer and bridge |
US8922302B2 (en) | 2011-08-24 | 2014-12-30 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator formed on a pedestal |
US8896395B2 (en) * | 2011-09-14 | 2014-11-25 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having multiple lateral features |
US9577603B2 (en) | 2011-09-14 | 2017-02-21 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Solidly mounted acoustic resonator having multiple lateral features |
KR101856060B1 (ko) | 2011-12-01 | 2018-05-10 | 삼성전자주식회사 | 체적 음향 공진기 |
JP2013138425A (ja) | 2011-12-27 | 2013-07-11 | Avago Technologies Wireless Ip (Singapore) Pte Ltd | ブリッジを備えるソリッドマウントバルク音響波共振器構造 |
US9608592B2 (en) | 2014-01-21 | 2017-03-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic wave resonator (FBAR) having stress-relief |
DE102014101805B4 (de) * | 2013-02-14 | 2020-07-02 | Avago Technologies International Sales Pte. Limited | Akustischer Resonator mit integriertem seitlichen Merkmal und Temperaturkompensationsmerkmal |
US9450167B2 (en) * | 2013-03-28 | 2016-09-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Temperature compensated acoustic resonator device having an interlayer |
US9608192B2 (en) | 2013-03-28 | 2017-03-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Temperature compensated acoustic resonator device |
JP5591977B2 (ja) * | 2013-04-30 | 2014-09-17 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタ、デュープレクサ、通信モジュール、および通信装置 |
US10804877B2 (en) | 2014-01-21 | 2020-10-13 | Avago Technologies International Sales Pte. Limited | Film bulk acoustic wave resonator (FBAR) having stress-relief |
US10404231B2 (en) | 2014-02-27 | 2019-09-03 | Avago Technologies International Sales Pte. Limited | Acoustic resonator device with an electrically-isolated layer of high-acoustic-impedance material interposed therein |
US9401691B2 (en) * | 2014-04-30 | 2016-07-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator device with air-ring and temperature compensating layer |
US9621126B2 (en) | 2014-10-22 | 2017-04-11 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator device including temperature compensation structure comprising low acoustic impedance layer |
US20160191015A1 (en) | 2014-12-27 | 2016-06-30 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Split current bulk acoustic wave (baw) resonators |
US9318692B1 (en) * | 2015-02-24 | 2016-04-19 | International Business Machines Corporation | Self-limited crack etch to prevent device shorting |
US10367471B2 (en) | 2015-05-21 | 2019-07-30 | Samsung Electro-Mechanics Co., Ltd. | Resonator package and method of manufacturing the same |
US10177736B2 (en) | 2015-05-29 | 2019-01-08 | Avago Technologies International Sales Pte. Limited | Bulk acoustic wave resonator comprising multiple acoustic reflectors |
US10084425B2 (en) | 2015-05-29 | 2018-09-25 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator structure having comprising a plurality of connection-side contacts |
JP6441761B2 (ja) | 2015-07-29 | 2018-12-19 | 太陽誘電株式会社 | 圧電薄膜共振器及びフィルタ |
US9893713B2 (en) | 2015-09-30 | 2018-02-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Wide bandwidth muliplexer based on LC and acoustic resonator circuits for performing carrier aggregation |
US9762208B2 (en) | 2015-09-30 | 2017-09-12 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Very wide bandwidth composite bandpass filter with steep roll-off |
US10778180B2 (en) * | 2015-12-10 | 2020-09-15 | Qorvo Us, Inc. | Bulk acoustic wave resonator with a modified outside stack portion |
DE102017101602B4 (de) | 2016-01-29 | 2022-06-09 | Avago Technologies International Sales Pte. Limited | Ein Multiplexer mit breiter Bandbreite auf der Basis von LC und akustischen Resonator-Schaltkreisen zum Ausführen von Carrier-Aggregation |
JP6469601B2 (ja) * | 2016-02-05 | 2019-02-13 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびデュプレクサ |
KR101843244B1 (ko) | 2016-02-17 | 2018-05-14 | 삼성전기주식회사 | 음향 공진기 및 그 제조 방법 |
US10396755B2 (en) * | 2016-02-17 | 2019-08-27 | Samsung Electro-Mechanics Co., Ltd. | Resonator having frame and method of manufacturing the same |
US10128813B2 (en) | 2016-04-21 | 2018-11-13 | Avago Technologies International Sales Pte. Limited | Bulk acoustic wave (BAW) resonator structure |
JP2017201050A (ja) | 2016-05-06 | 2017-11-09 | 学校法人早稲田大学 | 圧電体薄膜及びそれを用いた圧電素子 |
US10284168B2 (en) | 2016-10-27 | 2019-05-07 | Avago Technologies International Sales Pte. Limited | Bulk acoustic wave resonator |
US10886888B2 (en) | 2016-10-27 | 2021-01-05 | Avago Technologies International Sales Pte. Limited | Bulk acoustic wave resonator having openings in an active area and a pillar beneath the opening |
US10263601B2 (en) | 2016-10-31 | 2019-04-16 | Avago Technologies International Sales Pte. Limited | Tunable bulk acoustic resonator device with improved insertion loss |
US10263587B2 (en) | 2016-12-23 | 2019-04-16 | Avago Technologies International Sales Pte. Limited | Packaged resonator with polymeric air cavity package |
US10511285B1 (en) | 2017-02-28 | 2019-12-17 | Avago Technologies International Sales Pte. Limited | Anchored polymeric package for acoustic resonator structures |
US10256788B2 (en) | 2017-03-31 | 2019-04-09 | Avago Technologies International Sales Pte. Limited | Acoustic resonator including extended cavity |
US10804875B2 (en) | 2017-09-29 | 2020-10-13 | Avago Technologies International Sales Pte. Limited | Polymer lid wafer-level package with an electrically and thermally conductive pillar |
US10700660B2 (en) | 2017-10-25 | 2020-06-30 | Avago Technologies International Sales Pte. Limited | Bulk acoustic wave resonator |
EP3723285A4 (en) | 2018-01-19 | 2020-12-30 | Wuhan Yanxi Micro Components Co., Ltd. | VOLUME FILM ACOUSTIC RESONATOR |
CN108134588B (zh) * | 2018-01-19 | 2020-01-14 | 武汉衍熙微器件有限公司 | 一种抑制横波效应的薄膜体声波谐振器 |
US11152909B2 (en) | 2018-04-19 | 2021-10-19 | Avago Technologies International Sales Pte. Limited | Bulk acoustic wave resonators having low atomic weight metal electrodes |
US11018651B2 (en) | 2018-04-19 | 2021-05-25 | Avago Technologies International Sales Pte. Limited | Bulk acoustic wave resonators having doped piezoelectric material and an adhesion and diffusion barrier layer |
EP3841669A4 (en) * | 2018-08-20 | 2022-05-25 | Woolsey, David | ACOUSTIC RESONATOR |
JP2020053966A (ja) | 2018-09-24 | 2020-04-02 | スカイワークス グローバル プライベート リミテッド | バルク弾性波デバイスにおける多層隆起フレーム |
CN110868186B (zh) * | 2019-04-23 | 2023-03-14 | 中国电子科技集团公司第十三研究所 | 体声波谐振器、其制作方法和半导体器件 |
CN110868184A (zh) * | 2019-04-23 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | 体声波谐振器和半导体器件 |
WO2021184252A1 (zh) * | 2020-03-18 | 2021-09-23 | 开元通信技术(厦门)有限公司 | 固态装配型谐振器及其制备方法 |
CN113659957B (zh) * | 2020-04-29 | 2024-04-12 | 华为技术有限公司 | 声波谐振器及无线通信设备 |
CN113555495B (zh) * | 2021-07-20 | 2024-03-19 | 广东工业大学 | 一种薄膜压力传感器及其制备方法与应用 |
Family Cites Families (329)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1670365A (en) | 1928-05-22 | And herman g | ||
FR1307476A (fr) * | 1960-12-12 | 1962-10-26 | U S Sonics Corp | Amplificateur sélecteur de fréquences |
US3189851A (en) * | 1962-06-04 | 1965-06-15 | Sonus Corp | Piezoelectric filter |
US3321648A (en) * | 1964-06-04 | 1967-05-23 | Sonus Corp | Piezoelectric filter element |
GB1207974A (en) | 1966-11-17 | 1970-10-07 | Clevite Corp | Frequency selective apparatus including a piezoelectric device |
US3422371A (en) * | 1967-07-24 | 1969-01-14 | Sanders Associates Inc | Thin film piezoelectric oscillator |
US3826931A (en) | 1967-10-26 | 1974-07-30 | Hewlett Packard Co | Dual crystal resonator apparatus |
US3582839A (en) * | 1968-06-06 | 1971-06-01 | Clevite Corp | Composite coupled-mode filter |
US3607761A (en) | 1968-12-09 | 1971-09-21 | Continental Oil Co | Soap bars containing salts of fatty acids derived from the guerbet reaction |
US3610969A (en) | 1970-02-06 | 1971-10-05 | Mallory & Co Inc P R | Monolithic piezoelectric resonator for use as filter or transformer |
US3845402A (en) | 1973-02-15 | 1974-10-29 | Edmac Ass Inc | Sonobuoy receiver system, floating coupler |
FR2380666A1 (fr) | 1977-02-14 | 1978-09-08 | Cii Honeywell Bull | Systeme de commande de decoupage pour convertisseur dans une alimentation electrique continue |
US4084217A (en) * | 1977-04-19 | 1978-04-11 | Bbc Brown, Boveri & Company, Limited | Alternating-current fed power supply |
GB2013343B (en) | 1978-01-26 | 1982-05-12 | Page Eng Co Ltd | Apparatus for detecting liquid |
GB2033185B (en) * | 1978-09-22 | 1983-05-18 | Secr Defence | Acoustic wave device with temperature stabilisation |
US4281299A (en) | 1979-11-23 | 1981-07-28 | Honeywell Inc. | Signal isolator |
ZA81781B (en) | 1980-02-13 | 1982-03-31 | Int Computers Ltd | Digital systems |
US4344004A (en) | 1980-09-22 | 1982-08-10 | Design Professionals Financial Corp. | Dual function transducer utilizing displacement currents |
US4320365A (en) * | 1980-11-03 | 1982-03-16 | United Technologies Corporation | Fundamental, longitudinal, thickness mode bulk wave resonator |
JPS58137317A (ja) * | 1982-02-09 | 1983-08-15 | Nec Corp | 圧電薄膜複合振動子 |
JPS5923612A (ja) * | 1982-07-29 | 1984-02-07 | Murata Mfg Co Ltd | 圧電共振子の製造方法 |
GB2137056B (en) | 1983-03-16 | 1986-09-03 | Standard Telephones Cables Ltd | Communications apparatus |
US4640756A (en) | 1983-10-25 | 1987-02-03 | The United States Of America As Represented By The United States Department Of Energy | Method of making a piezoelectric shear wave resonator |
US4608541A (en) | 1984-08-10 | 1986-08-26 | Analog Devices, Kk | Isolation amplifier |
US4625138A (en) | 1984-10-24 | 1986-11-25 | The United States Of America As Represented By The Secretary Of The Army | Piezoelectric microwave resonator using lateral excitation |
US4719383A (en) * | 1985-05-20 | 1988-01-12 | The United States Of America As Represented By The United States Department Of Energy | Piezoelectric shear wave resonator and method of making same |
US4819215A (en) | 1986-01-31 | 1989-04-04 | Showa Electric Wire & Cable Co., Ltd. | Electric signal transfer element |
SE465946B (sv) * | 1986-09-11 | 1991-11-18 | Bengt Henoch | Anordning foer oeverfoering av elektrisk energi till elektrisk utrustning genom omagnetiska och elektriskt isolerande material |
US4769272A (en) | 1987-03-17 | 1988-09-06 | National Semiconductor Corporation | Ceramic lid hermetic seal package structure |
JPH01157108A (ja) * | 1987-12-14 | 1989-06-20 | Victor Co Of Japan Ltd | 圧電薄膜共振子 |
US4906840A (en) * | 1988-01-27 | 1990-03-06 | The Board Of Trustees Of Leland Stanford Jr., University | Integrated scanning tunneling microscope |
US4841429A (en) * | 1988-03-24 | 1989-06-20 | Hughes Aircraft Company | Capacitive coupled power supplies |
US4836882A (en) * | 1988-09-12 | 1989-06-06 | The United States Of America As Represented By The Secretary Of The Army | Method of making an acceleration hardened resonator |
US5214392A (en) | 1988-11-08 | 1993-05-25 | Murata Mfg. Co., Ltd. | Multilayered ceramic type electromagnetic coupler apparatus |
US5118982A (en) * | 1989-05-31 | 1992-06-02 | Nec Corporation | Thickness mode vibration piezoelectric transformer |
US5048036A (en) | 1989-09-18 | 1991-09-10 | Spectra Diode Laboratories, Inc. | Heterostructure laser with lattice mismatch |
US5048038A (en) | 1990-01-25 | 1991-09-10 | The United States Of America As Represented By The United States Department Of Energy | Ion-implanted planar-buried-heterostructure diode laser |
DE69129879T2 (de) | 1990-05-22 | 1999-02-18 | Canon K.K., Tokio/Tokyo | Datenaufzeichnungsgerät |
US5241456A (en) | 1990-07-02 | 1993-08-31 | General Electric Company | Compact high density interconnect structure |
JP2995076B2 (ja) | 1990-07-24 | 1999-12-27 | 富士通株式会社 | 半導体装置 |
US5075641A (en) | 1990-12-04 | 1991-12-24 | Iowa State University Research Foundation, Inc. | High frequency oscillator comprising cointegrated thin film resonator and active device |
US5066925A (en) | 1990-12-10 | 1991-11-19 | Westinghouse Electric Corp. | Multi push-pull MMIC power amplifier |
US5162691A (en) | 1991-01-22 | 1992-11-10 | The United States Of America As Represented By The Secretary Of The Army | Cantilevered air-gap type thin film piezoelectric resonator |
US5233259A (en) | 1991-02-19 | 1993-08-03 | Westinghouse Electric Corp. | Lateral field FBAR |
US5111157A (en) | 1991-05-01 | 1992-05-05 | General Electric Company | Power amplifier for broad band operation at frequencies above one ghz and at decade watt power levels |
US5185589A (en) | 1991-05-17 | 1993-02-09 | Westinghouse Electric Corp. | Microwave film bulk acoustic resonator and manifolded filter bank |
US5262347A (en) | 1991-08-14 | 1993-11-16 | Bell Communications Research, Inc. | Palladium welding of a semiconductor body |
JPH0555438A (ja) | 1991-08-26 | 1993-03-05 | Rohm Co Ltd | 電子部品のリード端子構造 |
US5294898A (en) * | 1992-01-29 | 1994-03-15 | Motorola, Inc. | Wide bandwidth bandpass filter comprising parallel connected piezoelectric resonators |
EP0554825B1 (en) | 1992-02-04 | 1998-10-28 | Matsushita Electric Industrial Co., Ltd. | Direct contact type image sensor and its production method |
US5548189A (en) | 1992-03-26 | 1996-08-20 | Linear Technology Corp. | Fluorescent-lamp excitation circuit using a piezoelectric acoustic transformer and methods for using same |
US5361077A (en) | 1992-05-29 | 1994-11-01 | Iowa State University Research Foundation, Inc. | Acoustically coupled antenna utilizing an overmoded configuration |
US5382930A (en) * | 1992-12-21 | 1995-01-17 | Trw Inc. | Monolithic multipole filters made of thin film stacked crystal filters |
US5384808A (en) * | 1992-12-31 | 1995-01-24 | Apple Computer, Inc. | Method and apparatus for transmitting NRZ data signals across an isolation barrier disposed in an interface between adjacent devices on a bus |
US5448014A (en) | 1993-01-27 | 1995-09-05 | Trw Inc. | Mass simultaneous sealing and electrical connection of electronic devices |
US5465725A (en) | 1993-06-15 | 1995-11-14 | Hewlett Packard Company | Ultrasonic probe |
JPH0767200A (ja) | 1993-08-04 | 1995-03-10 | Motorola Inc | 音響的絶縁方法 |
JP3337535B2 (ja) | 1993-09-24 | 2002-10-21 | システム.ユニークス株式会社 | 非接触型回転結合器 |
US5587620A (en) * | 1993-12-21 | 1996-12-24 | Hewlett-Packard Company | Tunable thin film acoustic resonators and method for making the same |
US5633574A (en) | 1994-01-18 | 1997-05-27 | Sage; George E. | Pulse-charge battery charger |
US5594705A (en) * | 1994-02-04 | 1997-01-14 | Dynamotive Canada Corporation | Acoustic transformer with non-piezoelectric core |
US5427382A (en) | 1994-05-09 | 1995-06-27 | Pate; Elvis O. | Repair kit for three-dimensional animal targets |
DE19514307A1 (de) | 1994-05-19 | 1995-11-23 | Siemens Ag | Duplexer für ein Ultraschallabbildungssystem |
US5864261A (en) * | 1994-05-23 | 1999-01-26 | Iowa State University Research Foundation | Multiple layer acoustical structures for thin-film resonator based circuits and systems |
JPH0819097A (ja) | 1994-06-23 | 1996-01-19 | Motorola Inc | 音響絶縁器 |
JPH0878786A (ja) | 1994-09-02 | 1996-03-22 | Mitsubishi Electric Corp | 歪量子井戸の構造 |
JPH08148968A (ja) | 1994-11-24 | 1996-06-07 | Mitsubishi Electric Corp | 薄膜圧電素子 |
US5567334A (en) * | 1995-02-27 | 1996-10-22 | Texas Instruments Incorporated | Method for creating a digital micromirror device using an aluminum hard mask |
FR2734424B1 (fr) | 1995-05-19 | 1997-06-13 | Sgs Thomson Microelectronics | Dispositif d'alimentation electronique |
US5696423A (en) | 1995-06-29 | 1997-12-09 | Motorola, Inc. | Temperature compenated resonator and method |
US5692279A (en) | 1995-08-17 | 1997-12-02 | Motorola | Method of making a monolithic thin film resonator lattice filter |
JP2778554B2 (ja) | 1995-10-12 | 1998-07-23 | 日本電気株式会社 | 圧電トランス駆動回路 |
JPH09119943A (ja) | 1995-10-24 | 1997-05-06 | Wako:Kk | 加速度センサ |
US6219032B1 (en) | 1995-12-01 | 2001-04-17 | Immersion Corporation | Method for providing force feedback to a user of an interface device based on interactions of a controlled cursor with graphical elements in a graphical user interface |
US5729008A (en) | 1996-01-25 | 1998-03-17 | Hewlett-Packard Company | Method and device for tracking relative movement by correlating signals from an array of photoelements |
US6001664A (en) | 1996-02-01 | 1999-12-14 | Cielo Communications, Inc. | Method for making closely-spaced VCSEL and photodetector on a substrate |
CN1074843C (zh) | 1996-03-20 | 2001-11-14 | 陈美雍 | 游标定位装置 |
CN1183587C (zh) | 1996-04-08 | 2005-01-05 | 德克萨斯仪器股份有限公司 | 用于把两个集成电路直流上相互隔离的方法和设备 |
EP0818882A3 (en) | 1996-07-10 | 1999-12-15 | Matsushita Electric Industrial Co., Ltd. | Energy trapping piezoelectric device and producing method thereof |
JP2842526B2 (ja) | 1996-08-01 | 1999-01-06 | 日本電気株式会社 | 圧電トランスの駆動回路 |
US5714917A (en) * | 1996-10-02 | 1998-02-03 | Nokia Mobile Phones Limited | Device incorporating a tunable thin film bulk acoustic resonator for performing amplitude and phase modulation |
JPH10163772A (ja) | 1996-10-04 | 1998-06-19 | Sanyo Electric Co Ltd | 電力増幅器およびチップキャリヤ |
US6051907A (en) | 1996-10-10 | 2000-04-18 | Nokia Mobile Phones Limited | Method for performing on-wafer tuning of thin film bulk acoustic wave resonators (FBARS) |
US5873154A (en) * | 1996-10-17 | 1999-02-23 | Nokia Mobile Phones Limited | Method for fabricating a resonator having an acoustic mirror |
JP3031265B2 (ja) | 1996-10-24 | 2000-04-10 | 日本電気株式会社 | 圧電トランスの駆動回路および駆動方法 |
AU738374B2 (en) | 1997-02-12 | 2001-09-13 | Kanitech A/S | An input device for a computer |
WO1998038736A1 (fr) | 1997-02-26 | 1998-09-03 | Toyo Communication Equipment Co., Ltd. | Vibrateur piezoelectrique et son procede de fabrication |
US6087198A (en) * | 1998-02-12 | 2000-07-11 | Texas Instruments Incorporated | Low cost packaging for thin-film resonators and thin-film resonator-based filters |
US5872493A (en) * | 1997-03-13 | 1999-02-16 | Nokia Mobile Phones, Ltd. | Bulk acoustic wave (BAW) filter having a top portion that includes a protective acoustic mirror |
US5853601A (en) | 1997-04-03 | 1998-12-29 | Northrop Grumman Corporation | Top-via etch technique for forming dielectric membranes |
US6339048B1 (en) * | 1999-12-23 | 2002-01-15 | Elementis Specialties, Inc. | Oil and oil invert emulsion drilling fluids with improved anti-settling properties |
US6040962A (en) * | 1997-05-14 | 2000-03-21 | Tdk Corporation | Magnetoresistive element with conductive films and magnetic domain films overlapping a central active area |
US5910756A (en) | 1997-05-21 | 1999-06-08 | Nokia Mobile Phones Limited | Filters and duplexers utilizing thin film stacked crystal filter structures and thin film bulk acoustic wave resonators |
US5932953A (en) | 1997-06-30 | 1999-08-03 | Iowa State University Research Foundation, Inc. | Method and system for detecting material using piezoelectric resonators |
US5894647A (en) | 1997-06-30 | 1999-04-20 | Tfr Technologies, Inc. | Method for fabricating piezoelectric resonators and product |
JP3378775B2 (ja) | 1997-07-07 | 2003-02-17 | 株式会社村田製作所 | 圧電共振子およびその周波数調整方法 |
WO1999013343A1 (fr) | 1997-09-10 | 1999-03-18 | Matsushita Electric Industrial Co., Ltd. | Capteur d'acceleration et procede de fabrication |
US5982297A (en) | 1997-10-08 | 1999-11-09 | The Aerospace Corporation | Ultrasonic data communication system |
US6873065B2 (en) * | 1997-10-23 | 2005-03-29 | Analog Devices, Inc. | Non-optical signal isolator |
KR100253092B1 (ko) | 1997-12-05 | 2000-06-01 | 윤종용 | 반도체 제조설비의 진공 흡착 장치 |
DE19755893C2 (de) | 1997-12-08 | 2001-01-25 | Claus Rein | Verfahren und Anordnung zur Energie- und Informationsübertragung mittels Ultraschall |
JP3712423B2 (ja) * | 1998-01-16 | 2005-11-02 | 三菱電機株式会社 | 薄膜圧電素子 |
JP3230052B2 (ja) | 1998-03-23 | 2001-11-19 | 有限会社フィデリックス | 電源装置 |
US6026876A (en) * | 1998-03-25 | 2000-02-22 | Snyder; Frank L. | Tire traction enhancement system |
US6016052A (en) | 1998-04-03 | 2000-01-18 | Cts Corporation | Pulse frequency modulation drive circuit for piezoelectric transformer |
US5936150A (en) | 1998-04-13 | 1999-08-10 | Rockwell Science Center, Llc | Thin film resonant chemical sensor with resonant acoustic isolator |
US5953479A (en) | 1998-05-07 | 1999-09-14 | The United States Of America As Represented By The Secretary Of The Army | Tilted valance-band quantum well double heterostructures for single step active and passive optical waveguide device monolithic integration |
US6286207B1 (en) * | 1998-05-08 | 2001-09-11 | Nec Corporation | Resin structure in which manufacturing cost is cheap and sufficient adhesive strength can be obtained and method of manufacturing it |
EP1078453B1 (de) * | 1998-05-08 | 2003-04-16 | Infineon Technologies AG | Dünnfilm-piezoresonator |
JPH11345406A (ja) * | 1998-05-29 | 1999-12-14 | Sony Corp | マスクパターンの形成方法及び薄膜磁気ヘッドの製造方法 |
US6060818A (en) * | 1998-06-02 | 2000-05-09 | Hewlett-Packard Company | SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters |
DE19826152A1 (de) | 1998-06-12 | 1999-12-16 | Thomson Brandt Gmbh | Anordnung mit einem Schaltnetzteil und einem Mikroprozessor |
US6150703A (en) | 1998-06-29 | 2000-11-21 | Trw Inc. | Lateral mode suppression in semiconductor bulk acoustic resonator (SBAR) devices using tapered electrodes, and electrodes edge damping materials |
US6252229B1 (en) | 1998-07-10 | 2001-06-26 | Boeing North American, Inc. | Sealed-cavity microstructure and microbolometer and associated fabrication methods |
US6118181A (en) | 1998-07-29 | 2000-09-12 | Agilent Technologies, Inc. | System and method for bonding wafers |
US6090687A (en) | 1998-07-29 | 2000-07-18 | Agilent Technolgies, Inc. | System and method for bonding and sealing microfabricated wafers to form a single structure having a vacuum chamber therein |
US6335548B1 (en) | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
AU1108500A (en) | 1998-10-08 | 2000-04-26 | Richard Patten Bishop | Fluorescent lamp excitation circuit having a multi-layer piezoelectric acoustic transformer and methods for using the same |
AU4209199A (en) * | 1998-11-09 | 2000-05-29 | Richard Patten Bishop | Multi-layer piezoelectric electrical energy transfer device |
EP1079497A4 (en) * | 1998-12-22 | 2004-03-17 | Seiko Epson Corp | ENERGY SUPPLY SYSTEM, ENERGY RECEPTION SYSTEM, POWER TRANSMISSION SYSTEM, POWER TRANSMISSION METHOD, PORTABLE DEVICE AND TIMER |
FI113211B (fi) | 1998-12-30 | 2004-03-15 | Nokia Corp | Balansoitu suodatinrakenne ja matkaviestinlaite |
US6215375B1 (en) * | 1999-03-30 | 2001-04-10 | Agilent Technologies, Inc. | Bulk acoustic wave resonator with improved lateral mode suppression |
JP3531522B2 (ja) | 1999-04-19 | 2004-05-31 | 株式会社村田製作所 | 圧電共振子 |
JP4327942B2 (ja) | 1999-05-20 | 2009-09-09 | Tdk株式会社 | 薄膜圧電素子 |
US6262637B1 (en) | 1999-06-02 | 2001-07-17 | Agilent Technologies, Inc. | Duplexer incorporating thin-film bulk acoustic resonators (FBARs) |
DE19931297A1 (de) | 1999-07-07 | 2001-01-11 | Philips Corp Intellectual Pty | Volumenwellen-Filter |
FI107660B (fi) * | 1999-07-19 | 2001-09-14 | Nokia Mobile Phones Ltd | Resonaattorirakenne |
US6265246B1 (en) | 1999-07-23 | 2001-07-24 | Agilent Technologies, Inc. | Microcap wafer-level package |
US6228675B1 (en) | 1999-07-23 | 2001-05-08 | Agilent Technologies, Inc. | Microcap wafer-level package with vias |
JP4420538B2 (ja) | 1999-07-23 | 2010-02-24 | アバゴ・テクノロジーズ・ワイヤレス・アイピー(シンガポール)プライベート・リミテッド | ウェーハパッケージの製造方法 |
US6107721A (en) | 1999-07-27 | 2000-08-22 | Tfr Technologies, Inc. | Piezoelectric resonators on a differentially offset reflector |
US6617750B2 (en) | 1999-09-21 | 2003-09-09 | Rockwell Automation Technologies, Inc. | Microelectricalmechanical system (MEMS) electrical isolator with reduced sensitivity to inertial noise |
US6292336B1 (en) | 1999-09-30 | 2001-09-18 | Headway Technologies, Inc. | Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient |
DE60012566T2 (de) | 1999-10-19 | 2005-08-18 | Alcatel | Schaltnetzteilumwandler mit einem piezoelektrischen umwandler |
US6307447B1 (en) | 1999-11-01 | 2001-10-23 | Agere Systems Guardian Corp. | Tuning mechanical resonators for electrical filter |
KR100413789B1 (ko) | 1999-11-01 | 2003-12-31 | 삼성전자주식회사 | 고진공 패키징 마이크로자이로스코프 및 그 제조방법 |
JP2001196883A (ja) | 1999-11-01 | 2001-07-19 | Murata Mfg Co Ltd | 圧電共振素子の周波数調整方法 |
US6580159B1 (en) | 1999-11-05 | 2003-06-17 | Amkor Technology, Inc. | Integrated circuit device packages and substrates for making the packages |
US6441539B1 (en) | 1999-11-11 | 2002-08-27 | Murata Manufacturing Co., Ltd. | Piezoelectric resonator |
JP2001244778A (ja) * | 1999-12-22 | 2001-09-07 | Toyo Commun Equip Co Ltd | 高周波圧電振動子 |
DE60042916D1 (de) * | 2000-01-10 | 2009-10-22 | Eta Sa Mft Horlogere Suisse | Vorrichtung um ein Signal zu erzeugen,dessen Frequenz wesentlich Temperatur unabhängig ist |
US6452310B1 (en) | 2000-01-18 | 2002-09-17 | Texas Instruments Incorporated | Thin film resonator and method |
US6521477B1 (en) | 2000-02-02 | 2003-02-18 | Raytheon Company | Vacuum package fabrication of integrated circuit components |
US6479320B1 (en) | 2000-02-02 | 2002-11-12 | Raytheon Company | Vacuum package fabrication of microelectromechanical system devices with integrated circuit components |
US6466418B1 (en) | 2000-02-11 | 2002-10-15 | Headway Technologies, Inc. | Bottom spin valves with continuous spacer exchange (or hard) bias |
US6262600B1 (en) | 2000-02-14 | 2001-07-17 | Analog Devices, Inc. | Isolator for transmitting logic signals across an isolation barrier |
DE10007577C1 (de) * | 2000-02-18 | 2001-09-13 | Infineon Technologies Ag | Piezoresonator |
JP2001257560A (ja) * | 2000-03-10 | 2001-09-21 | Toyo Commun Equip Co Ltd | 超薄板圧電振動素子の電極構造 |
DE10014300A1 (de) | 2000-03-23 | 2001-10-04 | Infineon Technologies Ag | Halbleiterbauelement und Verfahren zu dessen Herstellung |
WO2001078229A1 (en) * | 2000-04-06 | 2001-10-18 | Koninklijke Philips Electronics N.V. | Tunable filter arrangement comprising resonators. |
US6441481B1 (en) | 2000-04-10 | 2002-08-27 | Analog Devices, Inc. | Hermetically sealed microstructure package |
US6384697B1 (en) * | 2000-05-08 | 2002-05-07 | Agilent Technologies, Inc. | Cavity spanning bottom electrode of a substrate-mounted bulk wave acoustic resonator |
GB0012439D0 (en) | 2000-05-24 | 2000-07-12 | Univ Cranfield | Improvements to filters |
KR100370398B1 (ko) | 2000-06-22 | 2003-01-30 | 삼성전자 주식회사 | 전자 및 mems 소자의 표면실장형 칩 규모 패키징 방법 |
JP2002033628A (ja) | 2000-07-14 | 2002-01-31 | Hitachi Ltd | 高周波電力増幅器 |
US6355498B1 (en) | 2000-08-11 | 2002-03-12 | Agere Systems Guartian Corp. | Thin film resonators fabricated on membranes created by front side releasing |
US6420820B1 (en) * | 2000-08-31 | 2002-07-16 | Agilent Technologies, Inc. | Acoustic wave resonator and method of operating the same to maintain resonance when subjected to temperature variations |
US6377137B1 (en) * | 2000-09-11 | 2002-04-23 | Agilent Technologies, Inc. | Acoustic resonator filter with reduced electromagnetic influence due to die substrate thickness |
US6530515B1 (en) | 2000-09-26 | 2003-03-11 | Amkor Technology, Inc. | Micromachine stacked flip chip package fabrication method |
US6486751B1 (en) | 2000-09-26 | 2002-11-26 | Agere Systems Inc. | Increased bandwidth thin film resonator having a columnar structure |
US6621137B1 (en) | 2000-10-12 | 2003-09-16 | Intel Corporation | MEMS device integrated chip package, and method of making same |
US6542055B1 (en) * | 2000-10-31 | 2003-04-01 | Agilent Technologies, Inc. | Integrated filter balun |
EP1202455A3 (en) | 2000-10-31 | 2004-09-15 | Agilent Technologies, Inc. (a Delaware corporation) | A packaging methodology for duplexers using fbars |
US6492883B2 (en) | 2000-11-03 | 2002-12-10 | Paratek Microwave, Inc. | Method of channel frequency allocation for RF and microwave duplexers |
US6515558B1 (en) * | 2000-11-06 | 2003-02-04 | Nokia Mobile Phones Ltd | Thin-film bulk acoustic resonator with enhanced power handling capacity |
GB0029090D0 (en) * | 2000-11-29 | 2001-01-10 | Univ Cranfield | Improvements in or relating to filters |
KR100398363B1 (ko) | 2000-12-05 | 2003-09-19 | 삼성전기주식회사 | Fbar 소자 및 그 제조방법 |
US6550664B2 (en) * | 2000-12-09 | 2003-04-22 | Agilent Technologies, Inc. | Mounting film bulk acoustic resonators in microwave packages using flip chip bonding technology |
US6366006B1 (en) | 2000-12-15 | 2002-04-02 | Clark Davis Boyd | Composite piezoelectric transformer |
US6424237B1 (en) | 2000-12-21 | 2002-07-23 | Agilent Technologies, Inc. | Bulk acoustic resonator perimeter reflection system |
US6496085B2 (en) | 2001-01-02 | 2002-12-17 | Nokia Mobile Phones Ltd | Solidly mounted multi-resonator bulk acoustic wave filter with a patterned acoustic mirror |
US6518860B2 (en) * | 2001-01-05 | 2003-02-11 | Nokia Mobile Phones Ltd | BAW filters having different center frequencies on a single substrate and a method for providing same |
US6407649B1 (en) * | 2001-01-05 | 2002-06-18 | Nokia Corporation | Monolithic FBAR duplexer and method of making the same |
US6469909B2 (en) | 2001-01-09 | 2002-10-22 | 3M Innovative Properties Company | MEMS package with flexible circuit interconnect |
US6512300B2 (en) | 2001-01-10 | 2003-01-28 | Raytheon Company | Water level interconnection |
JP2002217676A (ja) | 2001-01-17 | 2002-08-02 | Murata Mfg Co Ltd | 圧電フィルタ |
CA2369060C (en) | 2001-01-24 | 2005-10-04 | Nissin Electric Co., Ltd. | Dc-dc-converter and bi-directional dc-dc converter and method of controlling the same |
US6462631B2 (en) | 2001-02-14 | 2002-10-08 | Agilent Technologies, Inc. | Passband filter having an asymmetrical filter response |
US6583374B2 (en) * | 2001-02-20 | 2003-06-24 | Rockwell Automation Technologies, Inc. | Microelectromechanical system (MEMS) digital electrical isolator |
US6714102B2 (en) * | 2001-03-01 | 2004-03-30 | Agilent Technologies, Inc. | Method of fabricating thin film bulk acoustic resonator (FBAR) and FBAR structure embodying the method |
US6566979B2 (en) * | 2001-03-05 | 2003-05-20 | Agilent Technologies, Inc. | Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method |
US6787048B2 (en) | 2001-03-05 | 2004-09-07 | Agilent Technologies, Inc. | Method for producing thin bulk acoustic resonators (FBARs) with different frequencies on the same substrate by subtracting method and apparatus embodying the method |
US6874211B2 (en) * | 2001-03-05 | 2005-04-05 | Agilent Technologies, Inc. | Method for producing thin film bulk acoustic resonators (FBARs) with different frequencies on the same substrate by subtracting method and apparatus embodying the method |
US6617249B2 (en) | 2001-03-05 | 2003-09-09 | Agilent Technologies, Inc. | Method for making thin film bulk acoustic resonators (FBARS) with different frequencies on a single substrate and apparatus embodying the method |
US6483229B2 (en) | 2001-03-05 | 2002-11-19 | Agilent Technologies, Inc. | Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method |
US6469597B2 (en) | 2001-03-05 | 2002-10-22 | Agilent Technologies, Inc. | Method of mass loading of thin film bulk acoustic resonators (FBAR) for creating resonators of different frequencies and apparatus embodying the method |
JP4058970B2 (ja) * | 2001-03-21 | 2008-03-12 | セイコーエプソン株式会社 | ニオブ酸カリウム圧電薄膜を有する表面弾性波素子、周波数フィルタ、発振器、電子回路、及び電子機器 |
EP1371135B1 (en) | 2001-03-23 | 2005-11-30 | Infineon Technologies AG | Filter device |
JP3973915B2 (ja) | 2001-03-30 | 2007-09-12 | 株式会社日立メディアエレクトロニクス | 高周波フィルタ、高周波回路、アンテナ共用器及び無線端末 |
DE10118285A1 (de) | 2001-04-12 | 2002-11-07 | Philips Corp Intellectual Pty | Schaltung zur Umwandlung von Wechselspannung in Gleichspannung |
US6548943B2 (en) * | 2001-04-12 | 2003-04-15 | Nokia Mobile Phones Ltd. | Method of producing thin-film bulk acoustic wave devices |
US6472954B1 (en) | 2001-04-23 | 2002-10-29 | Agilent Technologies, Inc. | Controlled effective coupling coefficients for film bulk acoustic resonators |
US6668618B2 (en) | 2001-04-23 | 2003-12-30 | Agilent Technologies, Inc. | Systems and methods of monitoring thin film deposition |
US6476536B1 (en) | 2001-04-27 | 2002-11-05 | Nokia Corporation | Method of tuning BAW resonators |
US6441702B1 (en) | 2001-04-27 | 2002-08-27 | Nokia Mobile Phones Ltd. | Method and system for wafer-level tuning of bulk acoustic wave resonators and filters |
US6489688B1 (en) | 2001-05-02 | 2002-12-03 | Zeevo, Inc. | Area efficient bond pad placement |
US6601276B2 (en) | 2001-05-11 | 2003-08-05 | Agere Systems Inc. | Method for self alignment of patterned layers in thin film acoustic devices |
JP2005236337A (ja) * | 2001-05-11 | 2005-09-02 | Ube Ind Ltd | 薄膜音響共振器及びその製造方法 |
US7545532B2 (en) | 2001-06-07 | 2009-06-09 | Fujifilm Corporation | Image processing apparatus and image processing program storage medium |
KR100398365B1 (ko) * | 2001-06-25 | 2003-09-19 | 삼성전기주식회사 | 폭방향 파동이 억제되는 박막 공진기 |
US7135809B2 (en) | 2001-06-27 | 2006-11-14 | Koninklijke Philips Electronics, N.V. | Ultrasound transducer |
JP3903842B2 (ja) * | 2001-07-03 | 2007-04-11 | 株式会社村田製作所 | 圧電共振子、フィルタおよび電子通信機器 |
US6710681B2 (en) * | 2001-07-13 | 2004-03-23 | Agilent Technologies, Inc. | Thin film bulk acoustic resonator (FBAR) and inductor on a monolithic substrate and method of fabricating the same |
US6958566B2 (en) | 2001-08-16 | 2005-10-25 | The Regents Of The University Of Michigan | Mechanical resonator device having phenomena-dependent electrical stiffness |
US6936954B2 (en) | 2001-08-29 | 2005-08-30 | Honeywell International Inc. | Bulk resonator |
US6803835B2 (en) | 2001-08-30 | 2004-10-12 | Agilent Technologies, Inc. | Integrated filter balun |
US6559530B2 (en) | 2001-09-19 | 2003-05-06 | Raytheon Company | Method of integrating MEMS device with low-resistivity silicon substrates |
DE10147075A1 (de) | 2001-09-25 | 2003-04-30 | Infineon Technologies Ag | Piezoelektrisches Bauelement und Verfahren zu dessen Herstellung |
DE10149542A1 (de) | 2001-10-08 | 2003-04-17 | Infineon Technologies Ag | BAW-Resonator |
JP3922428B2 (ja) | 2001-10-16 | 2007-05-30 | Tdk株式会社 | 圧電振動子、圧電振動部品及びそれらの製造方法 |
US6593870B2 (en) | 2001-10-18 | 2003-07-15 | Rockwell Automation Technologies, Inc. | MEMS-based electrically isolated analog-to-digital converter |
GB0125529D0 (en) | 2001-10-24 | 2001-12-12 | The Technology Partnership Plc | Sensing apparatus |
US6630753B2 (en) | 2001-10-29 | 2003-10-07 | International Business Machines Corporation | Low cost redundant AC to DC power supply |
US6808955B2 (en) | 2001-11-02 | 2004-10-26 | Intel Corporation | Method of fabricating an integrated circuit that seals a MEMS device within a cavity |
US6720844B1 (en) * | 2001-11-16 | 2004-04-13 | Tfr Technologies, Inc. | Coupled resonator bulk acoustic wave filter |
US6710508B2 (en) * | 2001-11-27 | 2004-03-23 | Agilent Technologies, Inc. | Method for adjusting and stabilizing the frequency of an acoustic resonator |
TWI281277B (en) * | 2001-11-29 | 2007-05-11 | Matsushita Electric Ind Co Ltd | Driving circuit of piezoelectric transformer, cold cathode tube light-emitting device, liquid crystal panel and electronic machine mounted with liquid crystal panel |
DE10160617A1 (de) * | 2001-12-11 | 2003-06-12 | Epcos Ag | Akustischer Spiegel mit verbesserter Reflexion |
US6970365B2 (en) | 2001-12-12 | 2005-11-29 | Jpmorgan Chase Bank, N.A. | Controlled frequency power factor correction circuit and method |
US6600390B2 (en) | 2001-12-13 | 2003-07-29 | Agilent Technologies, Inc. | Differential filters with common mode rejection and broadband rejection |
US20030111439A1 (en) | 2001-12-14 | 2003-06-19 | Fetter Linus Albert | Method of forming tapered electrodes for electronic devices |
US6906451B2 (en) | 2002-01-08 | 2005-06-14 | Murata Manufacturing Co., Ltd. | Piezoelectric resonator, piezoelectric filter, duplexer, communication apparatus, and method for manufacturing piezoelectric resonator |
US6670866B2 (en) | 2002-01-09 | 2003-12-30 | Nokia Corporation | Bulk acoustic wave resonator with two piezoelectric layers as balun in filters and duplexers |
US20030132809A1 (en) | 2002-01-17 | 2003-07-17 | Chinnugounder Senthilkumar | Oscillator with tunable capacitor |
JP2003222636A (ja) | 2002-01-31 | 2003-08-08 | Fujitsu Media Device Kk | 加速度センサ |
US20030141946A1 (en) | 2002-01-31 | 2003-07-31 | Ruby Richard C. | Film bulk acoustic resonator (FBAR) and the method of making the same |
US6873529B2 (en) * | 2002-02-26 | 2005-03-29 | Kyocera Corporation | High frequency module |
US6603182B1 (en) | 2002-03-12 | 2003-08-05 | Lucent Technologies Inc. | Packaging micromechanical devices |
EP1345323B1 (en) * | 2002-03-15 | 2005-02-09 | Matsushita Electric Industrial Co., Ltd. | Balanced high-frequency device and balance-characteristics improving method and balanced high-frequency circuit using the same |
US6549394B1 (en) | 2002-03-22 | 2003-04-15 | Agilent Technologies, Inc. | Micromachined parallel-plate variable capacitor with plate suspension |
US6673697B2 (en) | 2002-04-03 | 2004-01-06 | Intel Corporation | Packaging microelectromechanical structures |
US6635509B1 (en) | 2002-04-12 | 2003-10-21 | Dalsa Semiconductor Inc. | Wafer-level MEMS packaging |
TW540173B (en) | 2002-05-03 | 2003-07-01 | Asia Pacific Microsystems Inc | Bulk acoustic device having integrated fine-tuning and trimming devices |
KR100506729B1 (ko) | 2002-05-21 | 2005-08-08 | 삼성전기주식회사 | 박막 벌크 어코스틱 공진기(FBARs)소자 및 그제조방법 |
US7276994B2 (en) | 2002-05-23 | 2007-10-02 | Murata Manufacturing Co., Ltd. | Piezoelectric thin-film resonator, piezoelectric filter, and electronic component including the piezoelectric filter |
JP2004072715A (ja) | 2002-06-11 | 2004-03-04 | Murata Mfg Co Ltd | 圧電薄膜共振子、圧電フィルタ、およびそれを有する電子部品 |
AU2003244319A1 (en) | 2002-06-20 | 2004-01-06 | Ube Industries, Ltd. | Thin film piezoelectric oscillator, thin film piezoelectric device, and manufacturing method thereof |
EP1549937B1 (de) | 2002-07-19 | 2013-03-20 | Siemens Aktiengesellschaft | Vorrichtung und Verfahren zur Detektion einer Substanz mithilfe eines piezoelektrischen Dünnfilmresonators |
JP4039322B2 (ja) * | 2002-07-23 | 2008-01-30 | 株式会社村田製作所 | 圧電フィルタ、デュプレクサ、複合圧電共振器および通信装置、並びに、圧電フィルタの周波数調整方法 |
US20040017130A1 (en) | 2002-07-24 | 2004-01-29 | Li-Peng Wang | Adjusting the frequency of film bulk acoustic resonators |
US20040016995A1 (en) | 2002-07-25 | 2004-01-29 | Kuo Shun Meen | MEMS control chip integration |
US6828713B2 (en) | 2002-07-30 | 2004-12-07 | Agilent Technologies, Inc | Resonator with seed layer |
EP1547189A4 (en) | 2002-08-03 | 2006-11-08 | Siverta Inc | INTEGRATED AND SEALED SWITCH FOR MICRO-ELECTRO-MECHANICAL SYSTEMS |
US6713314B2 (en) | 2002-08-14 | 2004-03-30 | Intel Corporation | Hermetically packaging a microelectromechanical switch and a film bulk acoustic resonator |
JP3879643B2 (ja) | 2002-09-25 | 2007-02-14 | 株式会社村田製作所 | 圧電共振子、圧電フィルタ、通信装置 |
JP4128836B2 (ja) | 2002-09-27 | 2008-07-30 | Tdk株式会社 | 薄膜圧電共振子、それを用いたフィルタ及びデュプレクサ |
DE10246791B4 (de) | 2002-10-08 | 2017-10-19 | Snaptrack, Inc. | Mit akustischen Volumenwellen arbeitender Resonator und Schaltung mit dem Resonator |
JP2004147246A (ja) | 2002-10-28 | 2004-05-20 | Matsushita Electric Ind Co Ltd | 圧電振動子、それを用いたフィルタ及び圧電振動子の調整方法 |
US6944432B2 (en) * | 2002-11-12 | 2005-09-13 | Nokia Corporation | Crystal-less oscillator transceiver |
FR2848036B1 (fr) * | 2002-11-28 | 2005-08-26 | St Microelectronics Sa | Support pour resonateur acoustique, resonateur acoustique et circuit integre correspondant |
DE10256937B4 (de) | 2002-12-05 | 2018-02-01 | Snaptrack, Inc. | Mit akustischen Volumenwellen arbeitendes Bauelement mit unsymmetrisch/symmetrischer Beschaltung |
JP3889351B2 (ja) * | 2002-12-11 | 2007-03-07 | Tdk株式会社 | デュプレクサ |
DE10258422A1 (de) * | 2002-12-13 | 2004-06-24 | Epcos Ag | Mit akustischen Volumenwellen arbeitendes Bauelement mit gekoppelten Resonatoren |
JP4342174B2 (ja) | 2002-12-27 | 2009-10-14 | 新光電気工業株式会社 | 電子デバイス及びその製造方法 |
JP3841049B2 (ja) | 2002-12-27 | 2006-11-01 | ヤマハ株式会社 | 電源回路 |
DE10301261B4 (de) | 2003-01-15 | 2018-03-22 | Snaptrack, Inc. | Mit akustischen Volumenwellen arbeitendes Bauelement und Verfahren zur Herstellung |
KR100455127B1 (ko) | 2003-01-24 | 2004-11-06 | 엘지전자 주식회사 | 박막 용적 탄성파 공진기를 이용한 물질 센서 모듈 |
US7026876B1 (en) | 2003-02-21 | 2006-04-11 | Dynalinear Technologies, Inc. | High linearity smart HBT power amplifiers for CDMA/WCDMA application |
KR100486627B1 (ko) * | 2003-02-21 | 2005-05-03 | 엘지전자 주식회사 | 반도체 패키지 |
US20040166603A1 (en) | 2003-02-25 | 2004-08-26 | Carley L. Richard | Micromachined assembly with a multi-layer cap defining a cavity |
US7275292B2 (en) | 2003-03-07 | 2007-10-02 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method for fabricating an acoustical resonator on a substrate |
US6922102B2 (en) | 2003-03-28 | 2005-07-26 | Andrew Corporation | High efficiency amplifier |
JP2004304704A (ja) | 2003-04-01 | 2004-10-28 | Matsushita Electric Ind Co Ltd | 薄膜音響共振子、及び、薄膜音響共振子回路 |
DE10317969B4 (de) | 2003-04-17 | 2005-06-16 | Epcos Ag | Duplexer mit erweiterter Funktionalität |
EP1469599B1 (en) | 2003-04-18 | 2010-11-03 | Samsung Electronics Co., Ltd. | Air gap type FBAR, duplexer using the FBAR, and fabricating methods thereof |
KR100599083B1 (ko) | 2003-04-22 | 2006-07-12 | 삼성전자주식회사 | 캔틸레버 형태의 압전 박막 공진 소자 및 그 제조방법 |
DE10319554B4 (de) * | 2003-04-30 | 2018-05-09 | Snaptrack, Inc. | Mit akustischen Volumenwellen arbeitendes Bauelement mit gekoppelten Resonatoren |
US6943648B2 (en) | 2003-05-01 | 2005-09-13 | Intel Corporation | Methods for forming a frequency bulk acoustic resonator with uniform frequency utilizing multiple trimming layers and structures formed thereby |
FR2854745B1 (fr) | 2003-05-07 | 2005-07-22 | Centre Nat Rech Scient | Circuit electronique a transformateur piezo-electrique integre |
US6927651B2 (en) | 2003-05-12 | 2005-08-09 | Agilent Technologies, Inc. | Acoustic resonator devices having multiple resonant frequencies and methods of making the same |
US6954121B2 (en) | 2003-06-09 | 2005-10-11 | Agilent Technologies, Inc. | Method for controlling piezoelectric coupling coefficient in film bulk acoustic resonators and apparatus embodying the method |
US6853534B2 (en) | 2003-06-09 | 2005-02-08 | Agilent Technologies, Inc. | Tunable capacitor |
EP1489740A3 (en) * | 2003-06-18 | 2006-06-28 | Matsushita Electric Industrial Co., Ltd. | Electronic component and method for manufacturing the same |
US6924717B2 (en) | 2003-06-30 | 2005-08-02 | Intel Corporation | Tapered electrode in an acoustic resonator |
JP4757026B2 (ja) | 2003-08-04 | 2011-08-24 | 株式会社村田製作所 | 加速度センサの特性調整方法 |
JP2005057332A (ja) * | 2003-08-04 | 2005-03-03 | Tdk Corp | フィルタ装置およびそれを用いた分波器 |
US6777263B1 (en) | 2003-08-21 | 2004-08-17 | Agilent Technologies, Inc. | Film deposition to enhance sealing yield of microcap wafer-level package with vias |
EP1517443B1 (en) | 2003-09-12 | 2011-06-29 | Panasonic Corporation | Thin film bulk acoustic resonator, method for producing the same, filter, composite electronic component device, and communication device |
JP2005117641A (ja) * | 2003-09-17 | 2005-04-28 | Matsushita Electric Ind Co Ltd | 圧電体共振器、それを用いたフィルタ及び共用器 |
EP1528677B1 (en) | 2003-10-30 | 2006-05-10 | Agilent Technologies, Inc. | Film acoustically-coupled transformer with two reverse c-axis piezoelectric elements |
US6946928B2 (en) * | 2003-10-30 | 2005-09-20 | Agilent Technologies, Inc. | Thin-film acoustically-coupled transformer |
US7362198B2 (en) * | 2003-10-30 | 2008-04-22 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd | Pass bandwidth control in decoupled stacked bulk acoustic resonator devices |
US7242270B2 (en) | 2003-10-30 | 2007-07-10 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Decoupled stacked bulk acoustic resonator-based band-pass filter |
US7019605B2 (en) | 2003-10-30 | 2006-03-28 | Larson Iii John D | Stacked bulk acoustic resonator band-pass filter with controllable pass bandwidth |
DE602004002363T2 (de) | 2003-10-30 | 2007-09-20 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Akustisch gekoppelter Dünnschicht-Transformator mit piezoelektrischem Material, welches entgegengesetzte C-Axen Orientierung besitzt |
US7358831B2 (en) * | 2003-10-30 | 2008-04-15 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator (FBAR) devices with simplified packaging |
US7294919B2 (en) | 2003-11-26 | 2007-11-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Device having a complaint element pressed between substrates |
TWI228869B (en) | 2003-12-30 | 2005-03-01 | Ind Tech Res Inst | Noise reduction method of filter |
JP2006166390A (ja) | 2004-02-05 | 2006-06-22 | Seiko Epson Corp | 圧電振動片、圧電振動子及び圧電発振器 |
GB0403481D0 (en) | 2004-02-17 | 2004-03-24 | Transense Technologies Plc | Interrogation method for passive sensor monitoring system |
JP2005286992A (ja) | 2004-03-02 | 2005-10-13 | Seiko Epson Corp | 圧電振動片、圧電振動子および圧電発振器 |
US7084553B2 (en) | 2004-03-04 | 2006-08-01 | Ludwiczak Damian R | Vibrating debris remover |
DE602004013534D1 (de) | 2004-03-09 | 2008-06-19 | Infineon Technologies Ag | Akustischer Volumenwellen - Filter und Verfahren zur Vermeidung unerwünschter Seitendurchgänge |
JP4078555B2 (ja) | 2004-03-17 | 2008-04-23 | セイコーエプソン株式会社 | ニオブ酸カリウム堆積体の製造方法 |
US6963257B2 (en) | 2004-03-19 | 2005-11-08 | Nokia Corporation | Coupled BAW resonator based duplexers |
JP3875240B2 (ja) | 2004-03-31 | 2007-01-31 | 株式会社東芝 | 電子部品の製造方法 |
US7161448B2 (en) | 2004-06-14 | 2007-01-09 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator performance enhancements using recessed region |
WO2006018788A1 (en) | 2004-08-20 | 2006-02-23 | Philips Intellectual Property & Standards Gmbh | Narrow band bulk acoustic wave filter |
TWI365603B (en) * | 2004-10-01 | 2012-06-01 | Avago Technologies Wireless Ip | A thin film bulk acoustic resonator with a mass loaded perimeter |
US7388454B2 (en) | 2004-10-01 | 2008-06-17 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using alternating frame structure |
US7280007B2 (en) * | 2004-11-15 | 2007-10-09 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Thin film bulk acoustic resonator with a mass loaded perimeter |
US20060087199A1 (en) * | 2004-10-22 | 2006-04-27 | Larson John D Iii | Piezoelectric isolating transformer |
US7098758B2 (en) | 2004-11-03 | 2006-08-29 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustically coupled thin-film resonators having an electrode with a tapered edge |
DE102004054895B4 (de) | 2004-11-12 | 2007-04-19 | Infineon Technologies Ag | Dünnschicht-BAW-Filter sowie Verfahren zur Herstellung eines Dünnschicht-BAW-Filters |
US8981876B2 (en) | 2004-11-15 | 2015-03-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters having frame elements |
US7791434B2 (en) * | 2004-12-22 | 2010-09-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric |
TWI256194B (en) | 2004-12-30 | 2006-06-01 | Delta Electronics Inc | Filter assembly with unbalanced to balanced conversion |
US7427819B2 (en) | 2005-03-04 | 2008-09-23 | Avago Wireless Ip Pte Ltd | Film-bulk acoustic wave resonator with motion plate and method |
US7138889B2 (en) | 2005-03-22 | 2006-11-21 | Triquint Semiconductor, Inc. | Single-port multi-resonator acoustic resonator device |
US7369013B2 (en) | 2005-04-06 | 2008-05-06 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using filled recessed region |
JPWO2006134959A1 (ja) | 2005-06-17 | 2009-01-08 | 松下電器産業株式会社 | 多重モード薄膜弾性波共振器フィルタ |
US7562429B2 (en) | 2005-06-20 | 2009-07-21 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Suspended device and method of making |
DE102005028927B4 (de) | 2005-06-22 | 2007-02-15 | Infineon Technologies Ag | BAW-Vorrichtung |
US7875483B2 (en) | 2005-08-10 | 2011-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of microelectromechanical system |
US7391286B2 (en) | 2005-10-06 | 2008-06-24 | Avago Wireless Ip Pte Ltd | Impedance matching and parasitic capacitor resonance of FBAR resonators and coupled filters |
US7737807B2 (en) * | 2005-10-18 | 2010-06-15 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating series-connected decoupled stacked bulk acoustic resonators |
US7675390B2 (en) * | 2005-10-18 | 2010-03-09 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating single decoupled stacked bulk acoustic resonator |
US7525398B2 (en) * | 2005-10-18 | 2009-04-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustically communicating data signals across an electrical isolation barrier |
US20070085632A1 (en) * | 2005-10-18 | 2007-04-19 | Larson John D Iii | Acoustic galvanic isolator |
US7425787B2 (en) * | 2005-10-18 | 2008-09-16 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating single insulated decoupled stacked bulk acoustic resonator with acoustically-resonant electrical insulator |
US7600371B2 (en) * | 2005-10-18 | 2009-10-13 | The Boeing Company | Thrust reversers including support members for inhibiting deflection |
US7423503B2 (en) * | 2005-10-18 | 2008-09-09 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic galvanic isolator incorporating film acoustically-coupled transformer |
US7514844B2 (en) | 2006-01-23 | 2009-04-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic data coupling system and method |
US7586392B2 (en) | 2006-01-23 | 2009-09-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Dual path acoustic data coupling system and method |
US7612636B2 (en) | 2006-01-30 | 2009-11-03 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Impedance transforming bulk acoustic wave baluns |
US7629865B2 (en) | 2006-05-31 | 2009-12-08 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters |
US7515018B2 (en) | 2006-08-31 | 2009-04-07 | Martin Handtmann | Acoustic resonator |
US7825749B2 (en) | 2007-05-31 | 2010-11-02 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Integrated coupled resonator filter and bulk acoustic wave devices |
US8258894B2 (en) | 2007-05-31 | 2012-09-04 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Coupled resonator filter with a filter section |
-
2005
- 2005-04-06 US US11/100,311 patent/US7369013B2/en active Active
- 2005-11-29 CN CN2005101242969A patent/CN1845453B/zh not_active Expired - Fee Related
-
2006
- 2006-03-15 GB GB0605222A patent/GB2425008B/en not_active Expired - Fee Related
- 2006-04-04 KR KR1020060030614A patent/KR101209961B1/ko active IP Right Grant
- 2006-04-05 JP JP2006103882A patent/JP5089907B2/ja not_active Expired - Fee Related
-
2007
- 2007-11-09 US US11/938,078 patent/US8230562B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20060107323A (ko) | 2006-10-13 |
US20060226932A1 (en) | 2006-10-12 |
CN1845453B (zh) | 2012-03-07 |
US8230562B2 (en) | 2012-07-31 |
KR101209961B1 (ko) | 2012-12-07 |
US7369013B2 (en) | 2008-05-06 |
US20080060181A1 (en) | 2008-03-13 |
JP2006295924A (ja) | 2006-10-26 |
CN1845453A (zh) | 2006-10-11 |
GB0605222D0 (en) | 2006-04-26 |
GB2425008A (en) | 2006-10-11 |
GB2425008B (en) | 2009-04-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5089907B2 (ja) | 充填された凹部領域を用いた音響共振器の性能向上 | |
JP4963379B2 (ja) | 交互配列の縁部構造を利用した音響共振器の性能向上 | |
US7791434B2 (en) | Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric | |
JP4661958B2 (ja) | 圧電共振子及び圧電フィルタ | |
JP4760908B2 (ja) | 弾性表面波装置 | |
CN103780219B (zh) | 具有带集成横向特征的复合电极的声共振器 | |
US7161448B2 (en) | Acoustic resonator performance enhancements using recessed region | |
WO2017212774A1 (ja) | 弾性波装置及びその製造方法 | |
KR100698985B1 (ko) | 필터 및 필터의 제조 방법 | |
JP4775445B2 (ja) | 薄膜圧電共振器および薄膜圧電フィルタ | |
CN109167585A (zh) | 体声波谐振器及其制作方法、滤波器 | |
WO2013172287A1 (ja) | 弾性波装置 | |
JP2008182543A (ja) | 薄膜圧電共振器とそれを用いた薄膜圧電フィルタ | |
JP5110091B2 (ja) | 弾性表面波装置 | |
CN116155227A (zh) | 一种声表面波滤波器及其制备方法 | |
KR100502569B1 (ko) | 선택형 블라그 반사층을 이용한 fbar 필터 | |
JP2008079328A (ja) | 圧電薄膜共振子及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090326 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20111101 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111108 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120529 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120822 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120911 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120912 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150921 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5089907 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |