CN1826424A - 由钛和钛氧化物和低氧化物物理气相沉积的能量转换和储存膜和器件 - Google Patents
由钛和钛氧化物和低氧化物物理气相沉积的能量转换和储存膜和器件 Download PDFInfo
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- CN1826424A CN1826424A CNA2004800210786A CN200480021078A CN1826424A CN 1826424 A CN1826424 A CN 1826424A CN A2004800210786 A CNA2004800210786 A CN A2004800210786A CN 200480021078 A CN200480021078 A CN 200480021078A CN 1826424 A CN1826424 A CN 1826424A
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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Abstract
Description
方法 | Vbd(Mv/cm) | K | FM |
反应溅射 | 0.46~1.35 | 34~65.9 | 19~50 |
偏压下的PDC物理气相沉积 | 3.48 | 83 | 288 |
膜厚度(nm) | k | Vbd(MV/cm) | FM | C(pF/mm2) | 击穿电压(V) | 膜形态 |
969 | 63 | 3.6 | 227 | 540 | 348 | 双层 |
1036 | 62 | 6.4 | 396 | 538 | 660 | 无定形 |
2020 | 98 | 3.5 | 335 | 429 | 705 | 双层 |
2322 | 98 | 5.5 | 539 | 429 | 1110 | 无定形 |
厚度 | 退火前 | 退火(℃) | 退火后 |
5000 | 6704 | 150 | 5809 |
5000 | 6493 | 200 | 4042 |
5000 | 6669 | 250 | 2736 |
5000 | 6493 | 300 | 3983 |
1μm | 6884 | 150 | 6743 |
1μm | 5197 | 200 | 3685 |
1μm | 6253 | 250 | 3612 |
1μm | 5324 | 300 | 3381 |
Claims (86)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US47337503P | 2003-05-23 | 2003-05-23 | |
US60/473,375 | 2003-05-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1826424A true CN1826424A (zh) | 2006-08-30 |
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Application Number | Title | Priority Date | Filing Date |
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CNA2004800210786A Pending CN1826424A (zh) | 2003-05-23 | 2004-05-21 | 由钛和钛氧化物和低氧化物物理气相沉积的能量转换和储存膜和器件 |
Country Status (5)
Country | Link |
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US (2) | US7238628B2 (zh) |
EP (1) | EP1633902B1 (zh) |
CN (1) | CN1826424A (zh) |
TW (1) | TWI338338B (zh) |
WO (1) | WO2004106582A2 (zh) |
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- 2004-05-21 TW TW093114518A patent/TWI338338B/zh not_active IP Right Cessation
- 2004-05-21 WO PCT/US2004/014524 patent/WO2004106582A2/en active Application Filing
- 2004-05-21 EP EP04751754A patent/EP1633902B1/en not_active Expired - Lifetime
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2007
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101978431B (zh) * | 2008-03-25 | 2012-09-26 | 旭硝子株式会社 | 导电体及其制造方法 |
CN103397302A (zh) * | 2013-07-01 | 2013-11-20 | 复旦大学 | 一种上转换发光的Er/Yb共掺杂TiO2薄膜的制备方法 |
CN103397302B (zh) * | 2013-07-01 | 2015-06-17 | 复旦大学 | 一种上转换发光的Er/Yb共掺杂TiO2薄膜的制备方法 |
WO2017127995A1 (en) * | 2016-01-25 | 2017-08-03 | Schott Glass Technologies (Suzhou) Co. Ltd. | Article with high capacity per area and use of such article in finger-print sensors |
Also Published As
Publication number | Publication date |
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EP1633902B1 (en) | 2012-12-26 |
WO2004106582A3 (en) | 2005-04-07 |
US20070172681A1 (en) | 2007-07-26 |
TW200507118A (en) | 2005-02-16 |
US8076005B2 (en) | 2011-12-13 |
TWI338338B (en) | 2011-03-01 |
WO2004106582A2 (en) | 2004-12-09 |
EP1633902A2 (en) | 2006-03-15 |
US20040259305A1 (en) | 2004-12-23 |
US7238628B2 (en) | 2007-07-03 |
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