CN1755945B - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN1755945B CN1755945B CN200510113350.XA CN200510113350A CN1755945B CN 1755945 B CN1755945 B CN 1755945B CN 200510113350 A CN200510113350 A CN 200510113350A CN 1755945 B CN1755945 B CN 1755945B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 239000012535 impurity Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims description 33
- 238000009792 diffusion process Methods 0.000 claims description 28
- 229910021332 silicide Inorganic materials 0.000 claims description 26
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 238000002955 isolation Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 abstract description 15
- 239000010410 layer Substances 0.000 description 158
- 150000002500 ions Chemical class 0.000 description 32
- 239000011229 interlayer Substances 0.000 description 19
- 229940090044 injection Drugs 0.000 description 14
- 238000002347 injection Methods 0.000 description 14
- 239000007924 injection Substances 0.000 description 14
- 238000005468 ion implantation Methods 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 208000005189 Embolism Diseases 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- -1 boron ion Chemical class 0.000 description 3
- 229910008484 TiSi Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000000116 mitigating effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66484—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with multiple gate, at least one gate being an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-282240 | 2004-09-28 | ||
JP2004282240A JP4836427B2 (ja) | 2004-09-28 | 2004-09-28 | 半導体装置及びその製造方法 |
JP2004282240 | 2004-09-28 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101619475A Division CN101414563B (zh) | 2004-09-28 | 2005-09-28 | 形成半导体器件的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1755945A CN1755945A (zh) | 2006-04-05 |
CN1755945B true CN1755945B (zh) | 2012-05-30 |
Family
ID=36098041
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101619475A Expired - Fee Related CN101414563B (zh) | 2004-09-28 | 2005-09-28 | 形成半导体器件的方法 |
CN200510113350.XA Expired - Fee Related CN1755945B (zh) | 2004-09-28 | 2005-09-28 | 半导体器件 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101619475A Expired - Fee Related CN101414563B (zh) | 2004-09-28 | 2005-09-28 | 形成半导体器件的方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US20060065928A1 (zh) |
JP (1) | JP4836427B2 (zh) |
CN (2) | CN101414563B (zh) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5031996B2 (ja) * | 2005-03-28 | 2012-09-26 | ラピスセミコンダクタ株式会社 | 半導体装置及びその製造方法 |
JP2007317903A (ja) * | 2006-05-26 | 2007-12-06 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JPWO2008136270A1 (ja) | 2007-04-26 | 2010-07-29 | 日本電気株式会社 | 表示素子及び電界効果型トランジスタ |
JP5502468B2 (ja) * | 2007-04-27 | 2014-05-28 | ローム株式会社 | 半導体装置の製造方法および半導体装置 |
JP5443978B2 (ja) * | 2007-04-27 | 2014-03-19 | ローム株式会社 | 半導体装置の製造方法および半導体装置 |
KR101438136B1 (ko) | 2007-12-20 | 2014-09-05 | 삼성전자주식회사 | 고전압 트랜지스터 |
JP4503080B2 (ja) * | 2008-02-29 | 2010-07-14 | Okiセミコンダクタ株式会社 | 半導体装置の製造方法。 |
US9299643B2 (en) * | 2008-09-29 | 2016-03-29 | Cypress Semiconductor Corporation | Ruthenium interconnect with high aspect ratio and method of fabrication thereof |
CN101770952B (zh) * | 2008-12-31 | 2012-01-25 | 中芯国际集成电路制造(上海)有限公司 | 金属氧化物半导体场效应晶体管及其形成方法 |
JP2011066165A (ja) * | 2009-09-16 | 2011-03-31 | Sharp Corp | 半導体装置及びその製造方法 |
JP2011100761A (ja) * | 2009-11-04 | 2011-05-19 | Sanken Electric Co Ltd | 半導体装置、半導体集積回路装置及び半導体装置の製造方法 |
JP2012109425A (ja) * | 2010-11-18 | 2012-06-07 | Panasonic Corp | 半導体装置及びその製造方法 |
KR20120124788A (ko) * | 2011-05-04 | 2012-11-14 | 삼성전자주식회사 | 반도체 소자 |
CN102315132B (zh) * | 2011-09-28 | 2016-09-14 | 上海华虹宏力半导体制造有限公司 | 高压晶体管及其制作方法 |
TWI506790B (zh) * | 2013-02-07 | 2015-11-01 | Vanguard Int Semiconduct Corp | 高電壓半導體元件及其製造方法 |
EP2983210A1 (en) * | 2014-08-05 | 2016-02-10 | Nxp B.V. | Semiconductor device |
CN104362176B (zh) * | 2014-09-30 | 2017-05-17 | 北京大学 | 高开关比的自对准双栅小带隙半导体晶体管及制备方法 |
US9391196B1 (en) | 2015-07-22 | 2016-07-12 | United Microelectronics Corp. | High-voltage metal-oxide-semiconductor transistor device and manufacturing method thereof |
CN106783999B (zh) * | 2015-11-24 | 2019-11-01 | 世界先进积体电路股份有限公司 | 半导体装置 |
KR102490091B1 (ko) * | 2016-07-08 | 2023-01-18 | 삼성전자주식회사 | 반도체 소자 |
TWI619248B (zh) * | 2017-01-04 | 2018-03-21 | 立錡科技股份有限公司 | 具有凹槽結構的金屬氧化半導體元件及其製造方法 |
FR3074961A1 (fr) * | 2017-12-13 | 2019-06-14 | Stmicroelectronics Sa | Dispositif electronique de protection contre les decharges electrostatiques |
JP2020155562A (ja) * | 2019-03-20 | 2020-09-24 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置および半導体装置の製造方法 |
CN110148630B (zh) * | 2019-04-23 | 2020-10-16 | 北京大学 | 一种双栅小带隙半导体晶体管及其制备方法 |
CN110534563B (zh) * | 2019-07-16 | 2020-09-18 | 北京大学 | 一种具有自对准反馈栅的晶体管及其制备方法 |
US11152381B1 (en) * | 2020-04-13 | 2021-10-19 | HeFeChip Corporation Limited | MOS transistor having lower gate-to-source/drain breakdown voltage and one-time programmable memory device using the same |
US11437082B2 (en) | 2020-05-17 | 2022-09-06 | HeFeChip Corporation Limited | Physically unclonable function circuit having lower gate-to-source/drain breakdown voltage |
US11894459B2 (en) * | 2020-07-23 | 2024-02-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dual gate structures for semiconductor devices |
Citations (3)
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CN1123957A (zh) * | 1994-07-25 | 1996-06-05 | 现代电子产业株式会社 | 半导体器件及其制造方法 |
US5736446A (en) * | 1997-05-21 | 1998-04-07 | Powerchip Semiconductor Corp. | Method of fabricating a MOS device having a gate-side air-gap structure |
US6096616A (en) * | 1998-05-18 | 2000-08-01 | Advanced Micro Devices, Inc. | Fabrication of a non-ldd graded p-channel mosfet |
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US4837173A (en) * | 1987-07-13 | 1989-06-06 | Motorola, Inc. | N-channel MOS transistors having source/drain regions with germanium |
JPH0666329B2 (ja) * | 1988-06-30 | 1994-08-24 | 株式会社東芝 | 半導体装置の製造方法 |
US5317179A (en) * | 1991-09-23 | 1994-05-31 | Integrated Silicon Solution, Inc. | Non-volatile semiconductor memory cell |
JPH0870122A (ja) * | 1994-08-30 | 1996-03-12 | Oki Electric Ind Co Ltd | Mosトランジスタ及びその製造方法 |
US5658808A (en) * | 1996-08-14 | 1997-08-19 | Industrial Technology Research Institute | Method of fabricating polycrystalline silicon thin-film transistor having symmetrical lateral resistors |
DE19711482C2 (de) * | 1997-03-19 | 1999-01-07 | Siemens Ag | Verfahren zur Herstellung eines vertikalen MOS-Transistors |
JP3142057B2 (ja) * | 1997-11-13 | 2001-03-07 | 日本電気株式会社 | 半導体装置とその製造方法、及び駆動装置 |
KR100263480B1 (ko) * | 1998-01-13 | 2000-09-01 | 김영환 | 이에스디 보호회로 및 그 제조방법 |
TW387151B (en) * | 1998-02-07 | 2000-04-11 | United Microelectronics Corp | Field effect transistor structure of integrated circuit and the manufacturing method thereof |
US6259142B1 (en) * | 1998-04-07 | 2001-07-10 | Advanced Micro Devices, Inc. | Multiple split gate semiconductor device and fabrication method |
JP3973819B2 (ja) * | 1999-03-08 | 2007-09-12 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
DE19957533A1 (de) * | 1999-11-30 | 2001-06-07 | Infineon Technologies Ag | Halbleiterschaltungsanordnung und Verfahren zur Herstellung |
US6660603B2 (en) * | 2000-09-21 | 2003-12-09 | Texas Instruments Incorporated | Higher voltage drain extended MOS transistors with self-aligned channel and drain extensions |
JP4147765B2 (ja) * | 2001-06-01 | 2008-09-10 | ソニー株式会社 | 不揮発性半導体メモリ装置およびその電荷注入方法 |
US6580120B2 (en) * | 2001-06-07 | 2003-06-17 | Interuniversitair Microelektronica Centrum (Imec Vzw) | Two bit non-volatile electrically erasable and programmable memory structure, a process for producing said memory structure and methods for programming, reading and erasing said memory structure |
DE10137343C1 (de) * | 2001-07-31 | 2002-09-12 | Infineon Technologies Ag | Halbleiterstruktur mit Feldplatte |
US6710416B1 (en) * | 2003-05-16 | 2004-03-23 | Agere Systems Inc. | Split-gate metal-oxide-semiconductor device |
US7274076B2 (en) * | 2003-10-20 | 2007-09-25 | Micron Technology, Inc. | Threshold voltage adjustment for long channel transistors |
JP2005142475A (ja) * | 2003-11-10 | 2005-06-02 | Oki Electric Ind Co Ltd | 半導体装置および半導体装置の製造方法 |
-
2004
- 2004-09-28 JP JP2004282240A patent/JP4836427B2/ja not_active Expired - Fee Related
-
2005
- 2005-09-16 US US11/227,085 patent/US20060065928A1/en not_active Abandoned
- 2005-09-28 CN CN2008101619475A patent/CN101414563B/zh not_active Expired - Fee Related
- 2005-09-28 CN CN200510113350.XA patent/CN1755945B/zh not_active Expired - Fee Related
-
2008
- 2008-03-06 US US12/073,488 patent/US20080188048A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1123957A (zh) * | 1994-07-25 | 1996-06-05 | 现代电子产业株式会社 | 半导体器件及其制造方法 |
US5736446A (en) * | 1997-05-21 | 1998-04-07 | Powerchip Semiconductor Corp. | Method of fabricating a MOS device having a gate-side air-gap structure |
US6096616A (en) * | 1998-05-18 | 2000-08-01 | Advanced Micro Devices, Inc. | Fabrication of a non-ldd graded p-channel mosfet |
Non-Patent Citations (1)
Title |
---|
JP特开平11-204792 1999.07.30 |
Also Published As
Publication number | Publication date |
---|---|
JP4836427B2 (ja) | 2011-12-14 |
CN101414563B (zh) | 2011-04-13 |
JP2006100404A (ja) | 2006-04-13 |
US20080188048A1 (en) | 2008-08-07 |
CN101414563A (zh) | 2009-04-22 |
CN1755945A (zh) | 2006-04-05 |
US20060065928A1 (en) | 2006-03-30 |
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