CN1741277A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN1741277A
CN1741277A CNA2005100976414A CN200510097641A CN1741277A CN 1741277 A CN1741277 A CN 1741277A CN A2005100976414 A CNA2005100976414 A CN A2005100976414A CN 200510097641 A CN200510097641 A CN 200510097641A CN 1741277 A CN1741277 A CN 1741277A
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CN
China
Prior art keywords
semiconductor
insulating film
semiconductor layer
silicide
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005100976414A
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English (en)
Chinese (zh)
Inventor
一法师隆志
岩松俊明
前川繁登
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Publication of CN1741277A publication Critical patent/CN1741277A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
CNA2005100976414A 2004-08-27 2005-08-29 半导体装置及其制造方法 Pending CN1741277A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP248181/04 2004-08-27
JP2004248181A JP2006066691A (ja) 2004-08-27 2004-08-27 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
CN1741277A true CN1741277A (zh) 2006-03-01

Family

ID=35941866

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005100976414A Pending CN1741277A (zh) 2004-08-27 2005-08-29 半导体装置及其制造方法

Country Status (5)

Country Link
US (2) US7402865B2 (enExample)
JP (1) JP2006066691A (enExample)
KR (1) KR20060053097A (enExample)
CN (1) CN1741277A (enExample)
TW (1) TW200625648A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102522365A (zh) * 2012-01-12 2012-06-27 重庆大学 碲基复合薄膜作为soi材料的应用及其功率器件
CN102598273A (zh) * 2009-10-06 2012-07-18 国际商业机器公司 用于soi mosfet中的面积高效型主体接触的分层浅沟槽隔离
CN103210493A (zh) * 2010-11-10 2013-07-17 国际商业机器公司 邻接的soi结隔离结构和器件以及制造方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006015076B4 (de) * 2006-03-31 2014-03-20 Advanced Micro Devices, Inc. Halbleiterbauelement mit SOI-Transistoren und Vollsubstrattransistoren und ein Verfahren zur Herstellung
JP5171232B2 (ja) * 2006-12-15 2013-03-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100857229B1 (ko) 2007-05-28 2008-09-05 삼성전자주식회사 반도체 소자 및 그 형성방법
JP5286701B2 (ja) 2007-06-27 2013-09-11 ソニー株式会社 半導体装置および半導体装置の製造方法
JP2009032962A (ja) * 2007-07-27 2009-02-12 Panasonic Corp 半導体装置及びその製造方法
US7910995B2 (en) * 2008-04-24 2011-03-22 Fairchild Semiconductor Corporation Structure and method for semiconductor power devices
US7964897B2 (en) * 2008-07-22 2011-06-21 Honeywell International Inc. Direct contact to area efficient body tie process flow
US7999320B2 (en) * 2008-12-23 2011-08-16 International Business Machines Corporation SOI radio frequency switch with enhanced signal fidelity and electrical isolation
JP5736808B2 (ja) * 2011-02-02 2015-06-17 富士通セミコンダクター株式会社 半導体装置及びその製造方法
KR20140026846A (ko) 2012-08-23 2014-03-06 삼성전자주식회사 광소자
KR20150047285A (ko) * 2013-10-24 2015-05-04 에스케이하이닉스 주식회사 반도체 장치와 이의 제조방법 및 동작방법
US9177968B1 (en) 2014-09-19 2015-11-03 Silanna Semiconductor U.S.A., Inc. Schottky clamped radio frequency switch
KR102556027B1 (ko) 2015-09-10 2023-07-17 삼성디스플레이 주식회사 디스플레이장치 및 이의 제조방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3184348B2 (ja) 1992-12-28 2001-07-09 三菱電機株式会社 半導体装置およびその製造方法
US5559368A (en) * 1994-08-30 1996-09-24 The Regents Of The University Of California Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation
US5573961A (en) * 1995-11-09 1996-11-12 Taiwan Semiconductor Manufacturing Company Ltd. Method of making a body contact for a MOSFET device fabricated in an SOI layer
US5753955A (en) * 1996-12-19 1998-05-19 Honeywell Inc. MOS device having a gate to body connection with a body injection current limiting feature for use on silicon on insulator substrates
JP3216591B2 (ja) * 1997-10-29 2001-10-09 日本電気株式会社 電界効果型トランジスタ
TW362258B (en) * 1998-03-20 1999-06-21 United Microelectronics Corp Silicon trench contact structure on the insulation layer
JP4540146B2 (ja) * 1998-12-24 2010-09-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2001077368A (ja) * 1999-09-03 2001-03-23 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2002033484A (ja) * 2000-07-18 2002-01-31 Mitsubishi Electric Corp 半導体装置
US6664598B1 (en) * 2002-09-05 2003-12-16 International Business Machines Corporation Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102598273A (zh) * 2009-10-06 2012-07-18 国际商业机器公司 用于soi mosfet中的面积高效型主体接触的分层浅沟槽隔离
CN102598273B (zh) * 2009-10-06 2016-01-13 国际商业机器公司 用于soi mosfet中的面积高效型主体接触的分层浅沟槽隔离
CN103210493A (zh) * 2010-11-10 2013-07-17 国际商业机器公司 邻接的soi结隔离结构和器件以及制造方法
US9105718B2 (en) 2010-11-10 2015-08-11 International Business Machines Corporation Butted SOI junction isolation structures and devices and method of fabrication
CN103210493B (zh) * 2010-11-10 2016-01-06 国际商业机器公司 邻接的soi结隔离结构和器件以及制造方法
CN102522365A (zh) * 2012-01-12 2012-06-27 重庆大学 碲基复合薄膜作为soi材料的应用及其功率器件
CN102522365B (zh) * 2012-01-12 2013-12-11 重庆大学 碲基复合薄膜作为soi材料的应用及其功率器件

Also Published As

Publication number Publication date
KR20060053097A (ko) 2006-05-19
JP2006066691A (ja) 2006-03-09
US20080261387A1 (en) 2008-10-23
US20060043494A1 (en) 2006-03-02
US7402865B2 (en) 2008-07-22
TW200625648A (en) 2006-07-16

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