TW200625648A - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same

Info

Publication number
TW200625648A
TW200625648A TW094127840A TW94127840A TW200625648A TW 200625648 A TW200625648 A TW 200625648A TW 094127840 A TW094127840 A TW 094127840A TW 94127840 A TW94127840 A TW 94127840A TW 200625648 A TW200625648 A TW 200625648A
Authority
TW
Taiwan
Prior art keywords
soi layer
manufacturing
same
semiconductor device
barrier metal
Prior art date
Application number
TW094127840A
Other languages
English (en)
Chinese (zh)
Inventor
Takashi Ipposhi
Toshiaki Iwamatsu
Shigeto Maegawa
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200625648A publication Critical patent/TW200625648A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
TW094127840A 2004-08-27 2005-08-16 Semiconductor device and method of manufacturing the same TW200625648A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004248181A JP2006066691A (ja) 2004-08-27 2004-08-27 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW200625648A true TW200625648A (en) 2006-07-16

Family

ID=35941866

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094127840A TW200625648A (en) 2004-08-27 2005-08-16 Semiconductor device and method of manufacturing the same

Country Status (5)

Country Link
US (2) US7402865B2 (enExample)
JP (1) JP2006066691A (enExample)
KR (1) KR20060053097A (enExample)
CN (1) CN1741277A (enExample)
TW (1) TW200625648A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI462222B (zh) * 2008-12-23 2014-11-21 萬國商業機器公司 具增強訊號保真度與電氣絕緣之絕緣層上半導體射頻開關

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006015076B4 (de) * 2006-03-31 2014-03-20 Advanced Micro Devices, Inc. Halbleiterbauelement mit SOI-Transistoren und Vollsubstrattransistoren und ein Verfahren zur Herstellung
JP5171232B2 (ja) * 2006-12-15 2013-03-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100857229B1 (ko) 2007-05-28 2008-09-05 삼성전자주식회사 반도체 소자 및 그 형성방법
JP5286701B2 (ja) 2007-06-27 2013-09-11 ソニー株式会社 半導体装置および半導体装置の製造方法
JP2009032962A (ja) * 2007-07-27 2009-02-12 Panasonic Corp 半導体装置及びその製造方法
US7910995B2 (en) * 2008-04-24 2011-03-22 Fairchild Semiconductor Corporation Structure and method for semiconductor power devices
US7964897B2 (en) * 2008-07-22 2011-06-21 Honeywell International Inc. Direct contact to area efficient body tie process flow
US8680617B2 (en) * 2009-10-06 2014-03-25 International Business Machines Corporation Split level shallow trench isolation for area efficient body contacts in SOI MOSFETS
US8741725B2 (en) 2010-11-10 2014-06-03 International Business Machines Corporation Butted SOI junction isolation structures and devices and method of fabrication
JP5736808B2 (ja) * 2011-02-02 2015-06-17 富士通セミコンダクター株式会社 半導体装置及びその製造方法
CN102522365B (zh) * 2012-01-12 2013-12-11 重庆大学 碲基复合薄膜作为soi材料的应用及其功率器件
KR20140026846A (ko) 2012-08-23 2014-03-06 삼성전자주식회사 광소자
KR20150047285A (ko) * 2013-10-24 2015-05-04 에스케이하이닉스 주식회사 반도체 장치와 이의 제조방법 및 동작방법
US9177968B1 (en) 2014-09-19 2015-11-03 Silanna Semiconductor U.S.A., Inc. Schottky clamped radio frequency switch
KR102556027B1 (ko) 2015-09-10 2023-07-17 삼성디스플레이 주식회사 디스플레이장치 및 이의 제조방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3184348B2 (ja) 1992-12-28 2001-07-09 三菱電機株式会社 半導体装置およびその製造方法
US5559368A (en) * 1994-08-30 1996-09-24 The Regents Of The University Of California Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation
US5573961A (en) * 1995-11-09 1996-11-12 Taiwan Semiconductor Manufacturing Company Ltd. Method of making a body contact for a MOSFET device fabricated in an SOI layer
US5753955A (en) * 1996-12-19 1998-05-19 Honeywell Inc. MOS device having a gate to body connection with a body injection current limiting feature for use on silicon on insulator substrates
JP3216591B2 (ja) * 1997-10-29 2001-10-09 日本電気株式会社 電界効果型トランジスタ
TW362258B (en) * 1998-03-20 1999-06-21 United Microelectronics Corp Silicon trench contact structure on the insulation layer
JP4540146B2 (ja) * 1998-12-24 2010-09-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2001077368A (ja) * 1999-09-03 2001-03-23 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2002033484A (ja) * 2000-07-18 2002-01-31 Mitsubishi Electric Corp 半導体装置
US6664598B1 (en) * 2002-09-05 2003-12-16 International Business Machines Corporation Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI462222B (zh) * 2008-12-23 2014-11-21 萬國商業機器公司 具增強訊號保真度與電氣絕緣之絕緣層上半導體射頻開關

Also Published As

Publication number Publication date
KR20060053097A (ko) 2006-05-19
JP2006066691A (ja) 2006-03-09
US20080261387A1 (en) 2008-10-23
US20060043494A1 (en) 2006-03-02
CN1741277A (zh) 2006-03-01
US7402865B2 (en) 2008-07-22

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