JP2006066691A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP2006066691A
JP2006066691A JP2004248181A JP2004248181A JP2006066691A JP 2006066691 A JP2006066691 A JP 2006066691A JP 2004248181 A JP2004248181 A JP 2004248181A JP 2004248181 A JP2004248181 A JP 2004248181A JP 2006066691 A JP2006066691 A JP 2006066691A
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JP
Japan
Prior art keywords
body contact
semiconductor
silicide
insulating film
layer
Prior art date
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Pending
Application number
JP2004248181A
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English (en)
Japanese (ja)
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JP2006066691A5 (enExample
Inventor
Takashi Ipposhi
隆志 一法師
Toshiaki Iwamatsu
俊明 岩松
Shigeto Maekawa
繁登 前川
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Renesas Technology Corp
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Renesas Technology Corp
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Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2004248181A priority Critical patent/JP2006066691A/ja
Priority to TW094127840A priority patent/TW200625648A/zh
Priority to KR1020050075625A priority patent/KR20060053097A/ko
Priority to US11/210,666 priority patent/US7402865B2/en
Priority to CNA2005100976414A priority patent/CN1741277A/zh
Publication of JP2006066691A publication Critical patent/JP2006066691A/ja
Publication of JP2006066691A5 publication Critical patent/JP2006066691A5/ja
Priority to US12/143,868 priority patent/US20080261387A1/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP2004248181A 2004-08-27 2004-08-27 半導体装置およびその製造方法 Pending JP2006066691A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2004248181A JP2006066691A (ja) 2004-08-27 2004-08-27 半導体装置およびその製造方法
TW094127840A TW200625648A (en) 2004-08-27 2005-08-16 Semiconductor device and method of manufacturing the same
KR1020050075625A KR20060053097A (ko) 2004-08-27 2005-08-18 반도체장치 및 그 제조방법
US11/210,666 US7402865B2 (en) 2004-08-27 2005-08-25 Semiconductor device including a contact connected to the body and method of manufacturing the same
CNA2005100976414A CN1741277A (zh) 2004-08-27 2005-08-29 半导体装置及其制造方法
US12/143,868 US20080261387A1 (en) 2004-08-27 2008-06-23 Semiconductor device and method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004248181A JP2006066691A (ja) 2004-08-27 2004-08-27 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2006066691A true JP2006066691A (ja) 2006-03-09
JP2006066691A5 JP2006066691A5 (enExample) 2007-10-11

Family

ID=35941866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004248181A Pending JP2006066691A (ja) 2004-08-27 2004-08-27 半導体装置およびその製造方法

Country Status (5)

Country Link
US (2) US7402865B2 (enExample)
JP (1) JP2006066691A (enExample)
KR (1) KR20060053097A (enExample)
CN (1) CN1741277A (enExample)
TW (1) TW200625648A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008172212A (ja) * 2006-12-15 2008-07-24 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
KR100857229B1 (ko) 2007-05-28 2008-09-05 삼성전자주식회사 반도체 소자 및 그 형성방법
JP2010045331A (ja) * 2008-07-22 2010-02-25 Honeywell Internatl Inc ボディ・タイの領域に効果的に直接コンタクトを設けるプロセスフロー
JP2012160652A (ja) * 2011-02-02 2012-08-23 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006015076B4 (de) * 2006-03-31 2014-03-20 Advanced Micro Devices, Inc. Halbleiterbauelement mit SOI-Transistoren und Vollsubstrattransistoren und ein Verfahren zur Herstellung
JP5286701B2 (ja) 2007-06-27 2013-09-11 ソニー株式会社 半導体装置および半導体装置の製造方法
JP2009032962A (ja) * 2007-07-27 2009-02-12 Panasonic Corp 半導体装置及びその製造方法
US7910995B2 (en) * 2008-04-24 2011-03-22 Fairchild Semiconductor Corporation Structure and method for semiconductor power devices
US7999320B2 (en) * 2008-12-23 2011-08-16 International Business Machines Corporation SOI radio frequency switch with enhanced signal fidelity and electrical isolation
US8680617B2 (en) * 2009-10-06 2014-03-25 International Business Machines Corporation Split level shallow trench isolation for area efficient body contacts in SOI MOSFETS
US8741725B2 (en) 2010-11-10 2014-06-03 International Business Machines Corporation Butted SOI junction isolation structures and devices and method of fabrication
CN102522365B (zh) * 2012-01-12 2013-12-11 重庆大学 碲基复合薄膜作为soi材料的应用及其功率器件
KR20140026846A (ko) 2012-08-23 2014-03-06 삼성전자주식회사 광소자
KR20150047285A (ko) * 2013-10-24 2015-05-04 에스케이하이닉스 주식회사 반도체 장치와 이의 제조방법 및 동작방법
US9177968B1 (en) 2014-09-19 2015-11-03 Silanna Semiconductor U.S.A., Inc. Schottky clamped radio frequency switch
KR102556027B1 (ko) 2015-09-10 2023-07-17 삼성디스플레이 주식회사 디스플레이장치 및 이의 제조방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11135795A (ja) * 1997-10-29 1999-05-21 Nec Corp 電界効果型トランジスタ
JP2000243973A (ja) * 1998-12-24 2000-09-08 Mitsubishi Electric Corp 半導体装置及びその製造方法並びに半導体装置の設計方法
JP2001077368A (ja) * 1999-09-03 2001-03-23 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2001506418A (ja) * 1996-12-19 2001-05-15 ハネウエル・インコーポレーテッド シリコン・オン・インシュレータ基板上で使用するためのボディ注入電流制限機能を備えたゲート―ボディ接続を有するｍｏｓデバイス
JP2002033484A (ja) * 2000-07-18 2002-01-31 Mitsubishi Electric Corp 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3184348B2 (ja) 1992-12-28 2001-07-09 三菱電機株式会社 半導体装置およびその製造方法
US5559368A (en) * 1994-08-30 1996-09-24 The Regents Of The University Of California Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation
US5573961A (en) * 1995-11-09 1996-11-12 Taiwan Semiconductor Manufacturing Company Ltd. Method of making a body contact for a MOSFET device fabricated in an SOI layer
TW362258B (en) * 1998-03-20 1999-06-21 United Microelectronics Corp Silicon trench contact structure on the insulation layer
US6664598B1 (en) * 2002-09-05 2003-12-16 International Business Machines Corporation Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001506418A (ja) * 1996-12-19 2001-05-15 ハネウエル・インコーポレーテッド シリコン・オン・インシュレータ基板上で使用するためのボディ注入電流制限機能を備えたゲート―ボディ接続を有するｍｏｓデバイス
JPH11135795A (ja) * 1997-10-29 1999-05-21 Nec Corp 電界効果型トランジスタ
JP2000243973A (ja) * 1998-12-24 2000-09-08 Mitsubishi Electric Corp 半導体装置及びその製造方法並びに半導体装置の設計方法
JP2001077368A (ja) * 1999-09-03 2001-03-23 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2002033484A (ja) * 2000-07-18 2002-01-31 Mitsubishi Electric Corp 半導体装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008172212A (ja) * 2006-12-15 2008-07-24 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
KR100857229B1 (ko) 2007-05-28 2008-09-05 삼성전자주식회사 반도체 소자 및 그 형성방법
US8367533B2 (en) 2007-05-28 2013-02-05 Samsung Electronics Co., Ltd. Semiconductor devices including doped metal silicide patterns and related methods of forming such devices
JP2010045331A (ja) * 2008-07-22 2010-02-25 Honeywell Internatl Inc ボディ・タイの領域に効果的に直接コンタクトを設けるプロセスフロー
JP2012160652A (ja) * 2011-02-02 2012-08-23 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
KR20060053097A (ko) 2006-05-19
US20080261387A1 (en) 2008-10-23
US20060043494A1 (en) 2006-03-02
CN1741277A (zh) 2006-03-01
US7402865B2 (en) 2008-07-22
TW200625648A (en) 2006-07-16

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