CN1741249A - 半导体制造装置以及化学试剂交换方法 - Google Patents
半导体制造装置以及化学试剂交换方法 Download PDFInfo
- Publication number
- CN1741249A CN1741249A CNA2005100930887A CN200510093088A CN1741249A CN 1741249 A CN1741249 A CN 1741249A CN A2005100930887 A CNA2005100930887 A CN A2005100930887A CN 200510093088 A CN200510093088 A CN 200510093088A CN 1741249 A CN1741249 A CN 1741249A
- Authority
- CN
- China
- Prior art keywords
- chemical reagent
- temperature
- waste
- heat exchanger
- new
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 5
- 238000000034 method Methods 0.000 title claims description 24
- 239000000126 substance Substances 0.000 title abstract description 10
- 239000002699 waste material Substances 0.000 claims abstract description 147
- 239000007788 liquid Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000007599 discharging Methods 0.000 claims abstract description 24
- 238000004140 cleaning Methods 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 238000002156 mixing Methods 0.000 claims abstract description 13
- 230000007246 mechanism Effects 0.000 claims abstract description 9
- 239000003153 chemical reaction reagent Substances 0.000 claims description 409
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 56
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 31
- 238000010790 dilution Methods 0.000 claims description 17
- 239000012895 dilution Substances 0.000 claims description 17
- 238000003860 storage Methods 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- 230000008520 organization Effects 0.000 claims description 8
- 230000001052 transient effect Effects 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 2
- 150000007524 organic acids Chemical class 0.000 claims description 2
- 150000007530 organic bases Chemical class 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims 1
- 230000000630 rising effect Effects 0.000 description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 208000028659 discharge Diseases 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000012544 monitoring process Methods 0.000 description 5
- 239000002894 chemical waste Substances 0.000 description 4
- 229960002163 hydrogen peroxide Drugs 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 241001672694 Citrus reticulata Species 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000002440 industrial waste Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/14—Removing waste, e.g. labels, from cleaning liquid; Regenerating cleaning liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004248970A JP2006066727A (ja) | 2004-08-27 | 2004-08-27 | 半導体製造装置及び薬液交換方法 |
JP248970/2004 | 2004-08-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1741249A true CN1741249A (zh) | 2006-03-01 |
CN100390932C CN100390932C (zh) | 2008-05-28 |
Family
ID=35941389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100930887A Expired - Fee Related CN100390932C (zh) | 2004-08-27 | 2005-08-25 | 半导体制造装置以及化学试剂交换方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060042756A1 (zh) |
JP (1) | JP2006066727A (zh) |
KR (1) | KR100693238B1 (zh) |
CN (1) | CN100390932C (zh) |
TW (1) | TWI279833B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9120616B2 (en) | 2006-06-13 | 2015-09-01 | Advanced Technology Materials, Inc. | Liquid dispensing systems encompassing gas removal |
CN110918550A (zh) * | 2018-09-20 | 2020-03-27 | 台湾积体电路制造股份有限公司 | 冷却系统及冷却方法 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008016620A (ja) * | 2006-07-05 | 2008-01-24 | Toshiba Corp | 半導体製造装置及び半導体製造方法 |
KR100794585B1 (ko) * | 2006-08-01 | 2008-01-17 | 세메스 주식회사 | 습식 세정 장치 및 방법 |
KR100812545B1 (ko) * | 2006-10-23 | 2008-03-13 | 주식회사 케이씨텍 | 반도체 웨이퍼 세정장치 및 그 세정장치의 세정 약액공급방법 |
JP4878986B2 (ja) * | 2006-11-07 | 2012-02-15 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法、プログラムおよび記録媒体 |
KR101388110B1 (ko) * | 2007-10-22 | 2014-04-22 | 주식회사 케이씨텍 | 습식세정장치 및 그 운용방법 |
JP2009189905A (ja) * | 2008-02-12 | 2009-08-27 | Kurita Water Ind Ltd | 熱回収型洗浄装置 |
JP5313647B2 (ja) * | 2008-03-25 | 2013-10-09 | 大日本スクリーン製造株式会社 | 基板処理装置及び基板処理方法 |
TWI358327B (en) * | 2008-11-19 | 2012-02-21 | Inotera Memories Inc | Chemical treatment apparatus |
CN102122608B (zh) * | 2010-12-31 | 2012-08-15 | 北京七星华创电子股份有限公司 | 化学制剂处理系统 |
JP5766453B2 (ja) * | 2011-01-31 | 2015-08-19 | 三菱重工業株式会社 | 温水洗浄システムおよび温水洗浄方法 |
JP2013141613A (ja) * | 2012-01-06 | 2013-07-22 | Toshiba Carrier Corp | 産業用加熱装置 |
CN103377972B (zh) * | 2012-04-30 | 2016-12-28 | 细美事有限公司 | 基板处理装置和供给处理溶液的方法 |
JP6118719B2 (ja) * | 2013-12-16 | 2017-04-19 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法並びに基板処理プログラムを記録したコンピュータ読み取り可能な記録媒体 |
US9498799B2 (en) | 2014-03-11 | 2016-11-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for removing non-bonding compound from polycrystalline materials on solar panel |
CN104391433A (zh) * | 2014-12-05 | 2015-03-04 | 合肥鑫晟光电科技有限公司 | 一种喷淋系统及其使用方法 |
JP6858036B2 (ja) * | 2017-02-28 | 2021-04-14 | 株式会社Screenホールディングス | 基板処理装置 |
JP6786429B2 (ja) * | 2017-03-22 | 2020-11-18 | 株式会社Screenホールディングス | 基板処理装置、基板処理システム、および基板処理方法 |
JP2022178121A (ja) * | 2021-05-19 | 2022-12-02 | 株式会社Screenホールディングス | 基板処理システム |
JP2023131679A (ja) | 2022-03-09 | 2023-09-22 | 芝浦メカトロニクス株式会社 | 基板処理装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3508371A1 (de) * | 1985-03-08 | 1986-09-11 | Wacker Chemie Gmbh | Verfahren zur nachreinigung von chlorwasserstoff aus einer 1,2-dichlorethan-pyrolyse |
US5273589A (en) * | 1992-07-10 | 1993-12-28 | Griswold Bradley L | Method for low pressure rinsing and drying in a process chamber |
US5820689A (en) * | 1996-12-04 | 1998-10-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wet chemical treatment system and method for cleaning such system |
KR100252221B1 (ko) * | 1997-06-25 | 2000-04-15 | 윤종용 | 반도체장치 제조용 습식 식각장치 및 습식 식각장치내의 식각액 순환방법 |
US6039055A (en) * | 1998-01-08 | 2000-03-21 | International Business Machines Corporation | Wafer cleaning with dissolved gas concentration control |
JP2000266496A (ja) * | 1999-03-15 | 2000-09-29 | Komatsu Electronics Kk | 流体加熱装置 |
US6399517B2 (en) * | 1999-03-30 | 2002-06-04 | Tokyo Electron Limited | Etching method and etching apparatus |
US6295998B1 (en) * | 1999-05-25 | 2001-10-02 | Infineon Technologies North America Corp. | Temperature controlled gassification of deionized water for megasonic cleaning of semiconductor wafers |
JP4602540B2 (ja) * | 2000-12-12 | 2010-12-22 | オメガセミコン電子株式会社 | 基板処理装置 |
-
2004
- 2004-08-27 JP JP2004248970A patent/JP2006066727A/ja active Pending
-
2005
- 2005-08-16 TW TW094127946A patent/TWI279833B/zh not_active IP Right Cessation
- 2005-08-23 KR KR1020050077129A patent/KR100693238B1/ko active IP Right Grant
- 2005-08-25 CN CNB2005100930887A patent/CN100390932C/zh not_active Expired - Fee Related
- 2005-08-26 US US11/211,748 patent/US20060042756A1/en not_active Abandoned
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9120616B2 (en) | 2006-06-13 | 2015-09-01 | Advanced Technology Materials, Inc. | Liquid dispensing systems encompassing gas removal |
CN103101867B (zh) * | 2006-06-13 | 2017-07-28 | 恩特格里斯公司 | 流体分配系统及方法、连接器、微电子产品制造设备 |
CN110918550A (zh) * | 2018-09-20 | 2020-03-27 | 台湾积体电路制造股份有限公司 | 冷却系统及冷却方法 |
US11227780B2 (en) | 2018-09-20 | 2022-01-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for operating the same |
US11721567B2 (en) | 2018-09-20 | 2023-08-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for operating the same |
Also Published As
Publication number | Publication date |
---|---|
TWI279833B (en) | 2007-04-21 |
US20060042756A1 (en) | 2006-03-02 |
KR100693238B1 (ko) | 2007-03-12 |
CN100390932C (zh) | 2008-05-28 |
TW200625390A (en) | 2006-07-16 |
JP2006066727A (ja) | 2006-03-09 |
KR20060050557A (ko) | 2006-05-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SEIKO EPSON CORP. Free format text: FORMER OWNER: TOSHIBA CORPORATION; APPLICANT Effective date: 20070126 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070126 Address after: Tokyo, Japan, Japan Applicant after: Seiko Epson Corp. Address before: Tokyo, Japan, Japan Applicant before: Toshiba Corp Co-applicant before: Seiko Epson Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080528 Termination date: 20190825 |