CN1705099A - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN1705099A CN1705099A CNA2005100743166A CN200510074316A CN1705099A CN 1705099 A CN1705099 A CN 1705099A CN A2005100743166 A CNA2005100743166 A CN A2005100743166A CN 200510074316 A CN200510074316 A CN 200510074316A CN 1705099 A CN1705099 A CN 1705099A
- Authority
- CN
- China
- Prior art keywords
- semiconductor chip
- power line
- circuit part
- opening
- conductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 197
- 239000004020 conductor Substances 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 239000004332 silver Substances 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 14
- 230000006641 stabilisation Effects 0.000 description 6
- 238000011105 stabilization Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 208000034189 Sclerosis Diseases 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004164857 | 2004-06-02 | ||
JP2004164857A JP4904670B2 (ja) | 2004-06-02 | 2004-06-02 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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CN1705099A true CN1705099A (zh) | 2005-12-07 |
CN100392843C CN100392843C (zh) | 2008-06-04 |
Family
ID=35479722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100743166A Expired - Fee Related CN100392843C (zh) | 2004-06-02 | 2005-06-01 | 半导体器件 |
Country Status (5)
Country | Link |
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US (1) | US7361980B2 (zh) |
JP (1) | JP4904670B2 (zh) |
KR (1) | KR100662070B1 (zh) |
CN (1) | CN100392843C (zh) |
TW (1) | TWI271829B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101154658B (zh) * | 2006-09-30 | 2011-06-08 | 台湾积体电路制造股份有限公司 | 有数个模块单元的芯片和有数个功能区块的存储器芯片 |
CN102163577A (zh) * | 2010-01-29 | 2011-08-24 | 瑞萨电子株式会社 | 半导体器件和半导体器件的制造方法 |
CN104617000A (zh) * | 2013-11-01 | 2015-05-13 | 爱思开海力士有限公司 | 半导体封装体及其制造方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7906424B2 (en) | 2007-08-01 | 2011-03-15 | Advanced Micro Devices, Inc. | Conductor bump method and apparatus |
US20090032941A1 (en) * | 2007-08-01 | 2009-02-05 | Mclellan Neil | Under Bump Routing Layer Method and Apparatus |
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-
2005
- 2005-05-25 KR KR1020050043947A patent/KR100662070B1/ko active IP Right Grant
- 2005-05-26 TW TW094117246A patent/TWI271829B/zh not_active IP Right Cessation
- 2005-05-26 US US11/137,697 patent/US7361980B2/en not_active Expired - Fee Related
- 2005-06-01 CN CNB2005100743166A patent/CN100392843C/zh not_active Expired - Fee Related
Cited By (5)
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CN101154658B (zh) * | 2006-09-30 | 2011-06-08 | 台湾积体电路制造股份有限公司 | 有数个模块单元的芯片和有数个功能区块的存储器芯片 |
CN102163577A (zh) * | 2010-01-29 | 2011-08-24 | 瑞萨电子株式会社 | 半导体器件和半导体器件的制造方法 |
CN102163577B (zh) * | 2010-01-29 | 2015-06-17 | 瑞萨电子株式会社 | 半导体器件和半导体器件的制造方法 |
CN104617000A (zh) * | 2013-11-01 | 2015-05-13 | 爱思开海力士有限公司 | 半导体封装体及其制造方法 |
CN104617000B (zh) * | 2013-11-01 | 2018-08-21 | 爱思开海力士有限公司 | 半导体封装体及其制造方法 |
Also Published As
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TW200603352A (en) | 2006-01-16 |
JP2005347488A (ja) | 2005-12-15 |
JP4904670B2 (ja) | 2012-03-28 |
KR100662070B1 (ko) | 2006-12-27 |
TWI271829B (en) | 2007-01-21 |
CN100392843C (zh) | 2008-06-04 |
KR20060046166A (ko) | 2006-05-17 |
US7361980B2 (en) | 2008-04-22 |
US20050280034A1 (en) | 2005-12-22 |
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