CN1433082A - 异质结双极型晶体管和利用它构成的半导体集成电路器件 - Google Patents
异质结双极型晶体管和利用它构成的半导体集成电路器件 Download PDFInfo
- Publication number
- CN1433082A CN1433082A CN02129843A CN02129843A CN1433082A CN 1433082 A CN1433082 A CN 1433082A CN 02129843 A CN02129843 A CN 02129843A CN 02129843 A CN02129843 A CN 02129843A CN 1433082 A CN1433082 A CN 1433082A
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- Prior art keywords
- collector layer
- collector
- layer
- semiconductor
- transistor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 57
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 9
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 230000000630 rising effect Effects 0.000 abstract description 6
- 230000000593 degrading effect Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 30
- 239000002019 doping agent Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 13
- 230000008901 benefit Effects 0.000 description 6
- 238000005036 potential barrier Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 5
- 230000007850 degeneration Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 240000002329 Inga feuillei Species 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002010456A JP3573737B2 (ja) | 2002-01-18 | 2002-01-18 | ヘテロ接合バイポーラ・トランジスタおよび半導体集積回路 |
JP010456/2002 | 2002-01-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1433082A true CN1433082A (zh) | 2003-07-30 |
CN1213486C CN1213486C (zh) | 2005-08-03 |
Family
ID=19191591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021298432A Expired - Fee Related CN1213486C (zh) | 2002-01-18 | 2002-08-15 | 异质结双极型晶体管和利用它构成的半导体集成电路器件 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6881988B2 (zh) |
EP (1) | EP1329959A1 (zh) |
JP (1) | JP3573737B2 (zh) |
KR (1) | KR100508894B1 (zh) |
CN (1) | CN1213486C (zh) |
TW (1) | TW554448B (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100454573C (zh) * | 2003-11-18 | 2009-01-21 | 恩益禧电子股份有限公司 | 半导体器件 |
CN100474615C (zh) * | 2005-01-26 | 2009-04-01 | 索尼株式会社 | 半导体器件 |
US7728357B2 (en) | 2005-12-22 | 2010-06-01 | Panasonic Corporation | Heterojunction bipolar transistor and manufacturing method thereof |
CN104395993A (zh) * | 2012-06-20 | 2015-03-04 | 独立行政法人产业技术综合研究所 | 半导体装置 |
CN105074872A (zh) * | 2013-03-14 | 2015-11-18 | 威斯康星州男校友研究基金会 | 晶格失配的异质结结构和由其制备的器件 |
CN106653826A (zh) * | 2016-12-26 | 2017-05-10 | 厦门市三安集成电路有限公司 | 一种化合物半导体异质接面双极晶体管 |
CN109671770A (zh) * | 2017-10-17 | 2019-04-23 | 全新光电科技股份有限公司 | 具有能隙渐变的电洞阻隔层的异质接面双极性晶体管结构 |
CN113130694A (zh) * | 2021-04-02 | 2021-07-16 | 上海科技大学 | 一种850nm波段零偏压工作的光电探测器的外延结构 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4134715B2 (ja) * | 2002-12-19 | 2008-08-20 | 住友電気工業株式会社 | バイポーラトランジスタ |
US7038250B2 (en) * | 2003-05-28 | 2006-05-02 | Kabushiki Kaisha Toshiba | Semiconductor device suited for a high frequency amplifier |
JP2005039169A (ja) * | 2003-06-30 | 2005-02-10 | Matsushita Electric Ind Co Ltd | ヘテロ接合バイポーラトランジスタ及びその製造方法 |
JP4818985B2 (ja) * | 2003-06-30 | 2011-11-16 | パナソニック株式会社 | ヘテロ接合バイポーラトランジスタ |
JP4933024B2 (ja) * | 2003-11-26 | 2012-05-16 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
JP2005197440A (ja) | 2004-01-07 | 2005-07-21 | Matsushita Electric Ind Co Ltd | 半導体装置 |
US7687886B2 (en) * | 2004-08-19 | 2010-03-30 | Microlink Devices, Inc. | High on-state breakdown heterojunction bipolar transistor |
JP2006303222A (ja) * | 2005-04-21 | 2006-11-02 | Mitsubishi Electric Corp | ヘテロ接合バイポーラトランジスタおよびそれを備える増幅器 |
JP2007005406A (ja) * | 2005-06-21 | 2007-01-11 | Matsushita Electric Ind Co Ltd | ヘテロ接合バイポーラトランジスタ及び製造方法 |
US7462892B2 (en) * | 2005-07-26 | 2008-12-09 | Sony Corporation | Semiconductor device |
JP2007103784A (ja) * | 2005-10-06 | 2007-04-19 | Matsushita Electric Ind Co Ltd | ヘテロ接合バイポーラトランジスタ |
JP5160071B2 (ja) * | 2006-11-16 | 2013-03-13 | ルネサスエレクトロニクス株式会社 | ヘテロ接合バイポーラトランジスタ |
US7868289B2 (en) * | 2007-04-30 | 2011-01-11 | Ionics Mass Spectrometry Group Inc. | Mass spectrometer ion guide providing axial field, and method |
JP5576272B2 (ja) | 2007-07-03 | 2014-08-20 | マイクロリンク デバイセズ インコーポレイテッド | Iii−v化合物薄膜太陽電池 |
JP2010056250A (ja) * | 2008-08-27 | 2010-03-11 | Nec Electronics Corp | 半導体装置及び半導体装置の製造方法 |
JP5628681B2 (ja) | 2008-10-21 | 2014-11-19 | ルネサスエレクトロニクス株式会社 | バイポーラトランジスタ |
CN102246283B (zh) * | 2008-10-21 | 2014-08-06 | 瑞萨电子株式会社 | 双极晶体管 |
US9425351B2 (en) | 2014-10-06 | 2016-08-23 | Wisconsin Alumni Research Foundation | Hybrid heterostructure light emitting devices |
US9899556B2 (en) | 2015-09-14 | 2018-02-20 | Wisconsin Alumni Research Foundation | Hybrid tandem solar cells with improved tunnel junction structures |
JP2018137259A (ja) | 2017-02-20 | 2018-08-30 | 株式会社村田製作所 | ヘテロ接合バイポーラトランジスタ |
KR102299465B1 (ko) | 2017-03-24 | 2021-09-07 | 위스콘신 얼럼나이 리서어치 화운데이션 | 다층 p형 접촉자를 갖는 III-V족 질화물계 발광 소자 |
US10217897B1 (en) | 2017-10-06 | 2019-02-26 | Wisconsin Alumni Research Foundation | Aluminum nitride-aluminum oxide layers for enhancing the efficiency of group III-nitride light-emitting devices |
US10497817B1 (en) | 2018-07-09 | 2019-12-03 | Wisconsin Alumni Research Foundation | P-n diodes and p-n-p heterojunction bipolar transistors with diamond collectors and current tunneling layers |
CN113130638B (zh) * | 2020-01-14 | 2024-08-20 | 全新光电科技股份有限公司 | 高坚固性的异质结双极型晶体管 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04221834A (ja) | 1990-12-21 | 1992-08-12 | Nippon Telegr & Teleph Corp <Ntt> | ダブルヘテロバイポーラトランジスタ |
US5171697A (en) * | 1991-06-28 | 1992-12-15 | Texas Instruments Incorporated | Method of forming multiple layer collector structure for bipolar transistors |
JP3292894B2 (ja) | 1993-05-12 | 2002-06-17 | 日本電信電話株式会社 | 集積化受光回路 |
JPH07161727A (ja) | 1993-12-02 | 1995-06-23 | Hitachi Ltd | ヘテロバイポーラトランジスタ |
JP2692558B2 (ja) | 1993-12-27 | 1997-12-17 | 日本電気株式会社 | ヘテロ接合型バイポーラトランジスタ |
JPH09246281A (ja) | 1996-03-14 | 1997-09-19 | Toshiba Corp | ヘテロ接合バイポーラトランジスタ |
JP3347947B2 (ja) | 1996-08-01 | 2002-11-20 | 日本電信電話株式会社 | 半導体装置の製造方法 |
KR100337942B1 (ko) * | 1999-12-03 | 2002-05-24 | 김효근 | 이중 이종접합 쌍극성 트랜지스터 |
JP2001176881A (ja) * | 1999-12-17 | 2001-06-29 | Nippon Telegr & Teleph Corp <Ntt> | ヘテロ接合バイポーラトランジスタ |
-
2002
- 2002-01-18 JP JP2002010456A patent/JP3573737B2/ja not_active Expired - Lifetime
- 2002-08-14 US US10/218,775 patent/US6881988B2/en not_active Expired - Lifetime
- 2002-08-15 TW TW091118504A patent/TW554448B/zh not_active IP Right Cessation
- 2002-08-15 CN CNB021298432A patent/CN1213486C/zh not_active Expired - Fee Related
- 2002-08-16 EP EP02018499A patent/EP1329959A1/en not_active Ceased
- 2002-08-16 KR KR10-2002-0048437A patent/KR100508894B1/ko not_active IP Right Cessation
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100454573C (zh) * | 2003-11-18 | 2009-01-21 | 恩益禧电子股份有限公司 | 半导体器件 |
CN100474615C (zh) * | 2005-01-26 | 2009-04-01 | 索尼株式会社 | 半导体器件 |
US7728357B2 (en) | 2005-12-22 | 2010-06-01 | Panasonic Corporation | Heterojunction bipolar transistor and manufacturing method thereof |
CN1988172B (zh) * | 2005-12-22 | 2010-07-14 | 松下电器产业株式会社 | 异质结双极晶体管 |
CN104395993A (zh) * | 2012-06-20 | 2015-03-04 | 独立行政法人产业技术综合研究所 | 半导体装置 |
CN105074872A (zh) * | 2013-03-14 | 2015-11-18 | 威斯康星州男校友研究基金会 | 晶格失配的异质结结构和由其制备的器件 |
CN105074872B (zh) * | 2013-03-14 | 2018-09-11 | 威斯康星州男校友研究基金会 | 晶格失配的异质结结构和由其制备的器件 |
CN106653826A (zh) * | 2016-12-26 | 2017-05-10 | 厦门市三安集成电路有限公司 | 一种化合物半导体异质接面双极晶体管 |
CN106653826B (zh) * | 2016-12-26 | 2019-01-08 | 厦门市三安集成电路有限公司 | 一种化合物半导体异质接面双极晶体管 |
CN109671770A (zh) * | 2017-10-17 | 2019-04-23 | 全新光电科技股份有限公司 | 具有能隙渐变的电洞阻隔层的异质接面双极性晶体管结构 |
CN109671770B (zh) * | 2017-10-17 | 2022-04-05 | 全新光电科技股份有限公司 | 具有能隙渐变的电洞阻隔层的异质接面双极性晶体管结构 |
CN113130694A (zh) * | 2021-04-02 | 2021-07-16 | 上海科技大学 | 一种850nm波段零偏压工作的光电探测器的外延结构 |
Also Published As
Publication number | Publication date |
---|---|
JP2003218123A (ja) | 2003-07-31 |
EP1329959A1 (en) | 2003-07-23 |
CN1213486C (zh) | 2005-08-03 |
US20030136956A1 (en) | 2003-07-24 |
TW554448B (en) | 2003-09-21 |
JP3573737B2 (ja) | 2004-10-06 |
KR100508894B1 (ko) | 2005-08-18 |
US6881988B2 (en) | 2005-04-19 |
KR20030063075A (ko) | 2003-07-28 |
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NEC COMPUND SEMICONDUCTOR DEVICES CO LTD Effective date: 20060526 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20060526 Address after: Kanagawa Patentee after: NEC Corp. Address before: Kanagawa Patentee before: NEC Compund semiconductor Devices Co., Ltd. |
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Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER NAME: NEC CORP. |
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CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa Patentee after: Renesas Electronics Corporation Address before: Kanagawa Patentee before: NEC Corp. |
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CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa Patentee before: Renesas Electronics Corporation |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20050803 Termination date: 20180815 |