CN113130694A - 一种850nm波段零偏压工作的光电探测器的外延结构 - Google Patents

一种850nm波段零偏压工作的光电探测器的外延结构 Download PDF

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CN113130694A
CN113130694A CN202110361770.9A CN202110361770A CN113130694A CN 113130694 A CN113130694 A CN 113130694A CN 202110361770 A CN202110361770 A CN 202110361770A CN 113130694 A CN113130694 A CN 113130694A
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陈佰乐
谢治阳
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Abstract

本发明公开了一种850nm波段零偏压工作的光电探测器的外延结构。所述光电探测器的外延结构从下到上依次包括半绝缘GaAs衬底、缓冲层、阴极接触层、集电层、过渡层、耗尽GaAs吸收层、非耗尽GaAs吸收层、覆盖层和阳极接触层。本发明的外延结构用于光电探测器中，具有低暗电流、高响应度、高响应带宽和在零偏压下工作的特点，能够满足850nm波段短距离光互联系统的需求。

Description

一种850nm波段零偏压工作的光电探测器的外延结构
技术领域
本发明涉及一种850nm波段零偏压工作的光电探测器的外延结构，属于光电探测技术领域。
背景技术
在一些例如药物研发、环境气候变化模拟等领域的高性能计算系统中，对系统的数据传输速度具有很高的带宽需求。在这种短距离数据传输系统中，相较于传统的电互联，使用光互连的方式在能耗比、成本以及可靠性中更能体现出优势。现今的短距离光互联系统主要由工作在850nm波段的垂直腔面发射激光器(Vertical Cavity Surface EmittingLaser，VCSEL)，多模光纤(Multi-Mode Fiber，MMF)和光电探测器构成，对光电探测器的性能要求主要包括高响应度，低噪声，以及高频率响应带宽等，工作在零偏压下的光电探测器可以在一定程度上减少系统的能耗和复杂度。目前常用的850nm PIN探测器通常需要高响应度和高带宽之间做取舍，无法两者兼顾，并且带宽受到偏压变化的影响较大。
发明内容
本发明所要解决的技术问题是：现有850nm波段光电探测器无法在零偏压下同时满足高响应度和高响应带宽等性能。
为了解决上述技术问题，本发明提供了一种850nm波段零偏压工作的光电探测器的外延结构，从下到上依次包括半绝缘GaAs衬底、GaAs缓冲层、AlxGa1-xAs阴极接触层、AlxGa1-x As集电层、渐变AlxGa1-xAs过渡层、耗尽GaAs吸收层、非耗尽GaAs吸收层、AlxGa1-xAs覆盖层和GaAs阳极接触层。所述的耗尽GaAs吸收层和非耗尽GaAs吸收层用于吸收波长在850nm波段的光子；所述的AlxGa1-xAs阴极接触层、AlxGa1-xAs集电层、渐变AlxGa1-xAs过渡层和AlxGa1-xAs覆盖层均采用AlGaAs材料，对波长在850nm波段的光子透明，AlxGa1-xAs阴极接触层用于使半导体主体与阴极之间形成欧姆接触，GaAs阳极接触层用于使半导体主体与阳极之间形成欧姆接触。
优选地，所述耗尽GaAs吸收层为本征GaAs层；所述非耗尽GaAs吸收层包括具有阶梯掺杂浓度的多层p型GaAs层；所述AlxGa1-x As集电层为本征Al0.15Ga0.85As层。
优选地，所述耗尽GaAs吸收层和AlxGa1-x As集电层的掺杂浓度均为1×1015cm-3以下。
优选地，所述非耗尽GaAs吸收层包括掺杂浓度依次为2×1017cm-3、5×1017cm-3、1×1018cm-3和2×1018cm-3的四层p型GaAs层。
优选地，所述GaAs缓冲层为掺杂浓度＜1×1015cm-3的本征GaAs层；所述AlxGa1-xAs阴极接触层包括掺杂浓度依次为3×1018cm-3和1×1018cm-3的两层n型Al0.15Ga0.85As层；所述渐变AlxGa1-xAs过渡层依次包括掺杂浓度均为1×1015cm-3以下的本征Al0.10Ga0.90As层和本征Al0.05Ga0.95As层；所述AlxGa1-xAs覆盖层为掺杂浓度等于2×1018cm-3的p型Al0.15Ga0.85As层；所述GaAs阳极接触层为掺杂浓度等于1×1019cm-3的p型GaAs层。
优选地，所述GaAs缓冲层的厚度为200nm，所述AlxGa1-xAs阴极接触层的厚度为1100nm，所述AlxGa1-xAs集电层的厚度为300nm，所述渐变AlxGa1-xAs过渡层的厚度为20nm，所述耗尽GaAs吸收层的厚度为1400nm，所述非耗尽GaAs吸收层的厚度为200nm，所述AlxGa1- xAs覆盖层的厚度为400nm，所述GaAs阳极接触层的厚度为50nm。
更优选地，所述非耗尽GaAs吸收层中，四层p型GaAs层的厚度均为50nm。
更优选地，所述的AlxGa1-xAs阴极接触层中，两层n型Al0.15Ga0.85As层的厚度依次为1000nm和100nm。
更优选地，所述渐变AlxGa1-xAs过渡层中，本征Al0.10Ga0.90As层和本征Al0.05Ga0.95As层的厚度均为10nm。
本发明的技术原理：本发明的850nm波段零偏压工作的光电探测器的外延结构，以本征GaAs层和p型掺杂GaAs层作为吸收区，其吸收谱能够覆盖850nm波段，因此具有高响应度，吸收区上下的覆盖层、过渡层、集电层和阴极接触层均采用不吸收850nm光子的AlGaAs，拥有较大的带隙，在不减少响应度的同时保证光生载流子拥有较小的渡越时间和RC时间，即拥有较大的响应带宽；除此之外，p型GaAs材料的非耗尽吸收层采用梯度状的渐变掺杂结构会产生内建电场，加速载流子在非耗尽GaAs吸收层的扩散作用，进一步保证了高响应度和高响应带宽。
与现有技术相比，本发明的有益效果在于：
本发明的850nm波段零偏压工作的光电探测器的外延结构用于光电探测器中，具有低暗电流、高响应度、高响应带宽的特点，能够满足850nm波段短距离光互联系统的需求。
附图说明
图1为本发明的850nm波段零偏压工作的光电探测器的外延结构的结构示意图。
具体实施方式
为使本发明更明显易懂，兹以优选实施例，并配合附图作详细说明如下。
实施例1
一种850nm波段零偏压工作的光电探测器的外延结构：
利用金属有机化学气相沉积方法在半绝缘GaAs衬底a上依次生长出缓冲层b、阴极接触层c、集电层d、过渡层e、耗尽GaAs吸收层f、非耗尽GaAs吸收层g、覆盖层h和阳极接触层i，即为850nm波段零偏压工作的光电探测器的外延结构，其结构示意图如图1所示。其中，缓冲层b的厚度为200nm，采用掺杂浓度为1×1015cm-3以下的本征GaAs层；阴极接触层c的厚度为1100nm，由一层掺杂浓度为3×1018cm-3的n型AlxGa1-xAs层和一层掺杂浓度为1×1018cm-3的n型AlxGa1-xAs层组成，其中，x＝0.15，后者用于减少杂质离子向GaAs吸收层扩散；集电层d的厚度为300nm,采用掺杂浓度为1×1015cm-3以下的本征AlxGa1-x As层，其中，x＝0.15；过渡层e由两层厚度均为10nm、掺杂浓度为1×1015cm-3以下的本征AlxGa1-xAs层组成，其中，x依次为：x＝0.10和x＝0.05；耗尽GaAs吸收层f的厚度为1400nm，采用掺杂浓度为1×1015cm-3以下的本征GaAs层；非耗尽GaAs吸收层g的结构为：4层厚度均为50nm的GaAs层，掺杂类型均为p型掺杂，其中掺杂浓度依次为2×1017cm-3，5×1017cm-3，1×1018cm-3，2×1018cm-3；覆盖层h的厚度为400nm，掺杂类型为p型掺杂的AlxGa1-xAs，掺杂浓度为1×1019cm-3，其中，x＝0.15；阳极接触层i的厚度为50nm，采用掺杂浓度为2×1019cm-3的p型掺杂的GaAs层；各层的参数如表1所示。
表1 850nm波段零偏压工作的光电探测器的外延结构的组成和参数
Figure BDA0003005825900000031
Figure BDA0003005825900000041
性能测试：
将实施例1的850nm波段零偏压工作的光电探测器的外延结构用于光电探测器(光电探测器的直径为40μm)中，进行直流伏安特性测试，用半导体器件参数分析仪(KeysightB1500A Semiconductor Device Analyzer)给予光电探测器直流偏置并测得暗电流。测试得到在-2V偏压下暗电流能够达到约75fA。
对直径为40μm的光电探测器进行频率响应测试和响应度测试。测试得到的3dB带宽值在零偏压下为13.3GHz，-2V偏压下达到19.1GHz，在850nm波长的响应度为0.5A/W，且大小基本不随偏压影响。
对直径为40μm的光电探测器进行眼图测试。用任意波形发生器(AWG)和有源光模块(HGTECH 25G SFP28 AOC)产生25.8Gbp/s的光信号，通过光电探测器转化产生的射频电信号，再经过+23dB的射频功率放大器进行放大，测试得到光电探测器在零偏压下可以得到清晰的眼图。
尽管上述实施例对本发明做出了详尽的描述，但它仅仅是本发明一部分实施例，而不是全部实施例，并非对本发明任何形式上和实质上的限制，应当指出，对于本技术领域的普通技术人员，在不脱离本发明的前提下，还将可以做出若干改进和补充，这些改进和补充也应视为本发明的保护范围。

Claims (10)

1.一种850nm波段零偏压工作的光电探测器的外延结构，其特征在于，从下到上依次包括半绝缘GaAs衬底、GaAs缓冲层、AlxGa1-xAs阴极接触层、AlxGa1-xAs集电层、渐变AlxGa1-xAs过渡层、耗尽GaAs吸收层、非耗尽GaAs吸收层、AlxGa1-xAs覆盖层和GaAs阳极接触层。
2.如权利要求1所述的850nm波段零偏压工作的光电探测器的外延结构，其特征在于，所述耗尽GaAs吸收层为本征GaAs层；所述非耗尽GaAs吸收层包括具有阶梯掺杂浓度的多层p型GaAs层；所述AlxGa1-xAs集电层为本征Al0.15Ga0.85As层。
3.如权利要求2所述的850nm波段零偏压工作的光电探测器的外延结构，其特征在于，所述耗尽GaAs吸收层和AlxGa1-xAs集电层的掺杂浓度均为1×1015cm-3以下。
4.如权利要求2所述的850nm波段零偏压工作的光电探测器的外延结构，其特征在于，所述非耗尽GaAs吸收层包括掺杂浓度依次为2×1017cm-3、5×1017cm-3、1×1018cm-3和2×1018cm-3的四层p型GaAs层。
5.如权利要求1所述的850nm波段零偏压工作的光电探测器的外延结构，其特征在于，所述GaAs缓冲层为掺杂浓度＜1×1015cm-3的本征GaAs层；所述AlxGa1-xAs阴极接触层包括掺杂浓度依次为3×1018cm-3和1×1018cm-3的两层n型Al0.15Ga0.85As层；所述渐变AlxGa1-xAs过渡层依次包括掺杂浓度均为1×1015cm-3以下的本征Al0.10Ga0.90As层和本征Al0.05Ga0.95As层；所述AlxGa1-xAs覆盖层为掺杂浓度等于2×1018cm-3的p型Al0.15Ga0.85As层；所述GaAs阳极接触层为掺杂浓度等于1×1019cm-3的p型GaAs层。
6.如权利要求1所述的850nm波段零偏压工作的光电探测器的外延结构，其特征在于，所述GaAs缓冲层的厚度为200nm，所述AlxGa1-xAs阴极接触层的厚度为1100nm，所述AlxGa1- xAs集电层的厚度为300nm，所述渐变AlxGa1-xAs过渡层的厚度为20nm，所述耗尽GaAs吸收层的厚度为1400nm，所述非耗尽GaAs吸收层的厚度为200nm，所述AlxGa1-xAs覆盖层的厚度为400nm，所述GaAs阳极接触层的厚度为50nm。
7.如权利要求4所述的850nm波段零偏压工作的光电探测器的外延结构，其特征在于，所述非耗尽GaAs吸收层中，四层p型GaAs层的厚度均为50nm。
8.如权利要求5所述的850nm波段零偏压工作的光电探测器的外延结构，其特征在于，所述AlxGa1-xAs阴极接触层中，两层n型Al0.15Ga0.85As层的厚度依次为1000nm和100nm。
9.如权利要求5所述的850nm波段零偏压工作的光电探测器的外延结构，其特征在于，所述的渐变AlxGa1-xAs过渡层中，本征Al0.10Ga0.90As层和本征Al0.05Ga0.95As层的厚度均为10nm。
10.权利要求1～9中任意一项所述的850nm波段零偏压工作的光电探测器的外延结构在光电探测器中的应用。
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