CN1417856A - 半导体封装及其制造方法 - Google Patents

半导体封装及其制造方法 Download PDF

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CN1417856A
CN1417856A CN02146445A CN02146445A CN1417856A CN 1417856 A CN1417856 A CN 1417856A CN 02146445 A CN02146445 A CN 02146445A CN 02146445 A CN02146445 A CN 02146445A CN 1417856 A CN1417856 A CN 1417856A
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installing hole
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饭岛隆广
六川昭雄
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Shinko Electric Industries Co Ltd
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Abstract

一种高频特性优越的半导体封装，能容易安装大尺寸的电容器，由此能够抑制电源电压的波动，并且能够减少连接电容器和连接端的布线部分的电感，即，一种半导体封装，安装有电容器用于抑制电源电压波动，其中在厚度方向中穿过板的安装孔中，电容器由以下组成：一端连接到半导体芯片连接端的导线、以预定厚度覆盖导线的高介电常数材料、以及设置在高介电常数材料外周边和安装孔内壁之间的导体层，具有导线作为它的中心的同轴结构，并且提供一种半导体封装的制造方法。

Description

半导体封装及其制造方法
发明领域
本发明涉及半导体封装及其制造方法，特别涉及高频特性优越的半导体封装及其制造方法。
相关技术介绍
在处理微处理器等的高频信号的半导体封装中，信号传输路径中的频率特性成为问题。因此，通过使特性阻抗匹配或尽可能使信号线缩短等措施防止输入和输出端处的信号反射。例如，作为使特性阻抗匹配的方法，有使信号传输路径形状上共面实质上形成同轴电缆的方法，有在电路板中提供凹槽并将同轴电缆插入凹槽中得到同轴结构的方法(日本待审专利公开(Kokai)No.5-167258)等。此外，作为缩短信号线的方法，实践中将芯片电容器和其它电路部分设置得尽可能靠近半导体芯片的连接端。
然而，如果半导体封装处理的信号频率变为高达1GHz，电源中的波动会影响频率特性，所以实践中将大尺寸的电容器连接到电源线，以抑制传输信号时电源中的任何压降。对于由安装在电路板上的半导体芯片组成的现有技术的半导体器件，通过将芯片电容器设置在与半导体芯片的安装表面相对的电路板的表面上或将芯片电容器设置在半导体芯片附近，将电容器安装在电路上。这样将芯片电容器设置得尽可能靠近半导体芯片的连接端，由此尽可能地减少了传输路径的电感。
然而，半导体器件的工作频率变得较高。如果需要满足工作时将电感值减小到不超过几pH的条件，甚至将芯片电容器设置在与安装半导体芯片的位置相对的表面上尽可能靠近半导体芯片的位置处的方法也产生问题，根据板的厚度或芯片电容器的尺寸，在与电极连接部分处的电感上升超过需要的值，不再能得到半导体器件的需要性能。
发明概述
本发明的一个目的是提供一种高频特性优越的半导体封装，能容易安装大尺寸的电容器，由此能够抑制电源电压的波动，并且能够减少连接电容器和连接端的布线部分的电感，并且提供一种半导体封装的制造方法。
为实现以上目的，根据本发明的第一目的，提供一种半导体封装，安装有电容器用于抑制电源电压波动，其中在厚度方向中穿过板的安装孔中，电容器由以下组成：一端连接到半导体芯片连接端的导线、以预定厚度覆盖导线的高介电常数材料、以及设置在高介电常数材料外周边和安装孔内壁之间的导体层，具有导线作为它的中心的同轴结构。
优选，在厚度方向中穿过板的安装孔中，提供在板上的至少一个信号线由中心的信号线、低介电常数材料、以及导体层组成，形成匹配阻抗的同轴电缆部分。
根据本发明的第二方案，提供一种半导体封装的制造方法，半导体封装安装有电容器用于抑制电源电压波动，该方法包括提供在厚度方向中穿过板的安装孔并将电容器电缆按压到安装孔内，由此将电容器安装到板，电容器电缆由中心的导线、以预定厚度同轴地覆盖导线的高介电常数材料、以及覆盖高介电常数材料外周边的导体包皮组成。
根据本发明的第三方案，提供一种半导体封装的制造方法，半导体封装安装有电容器用于抑制电源电压波动，该方法包括提供在厚度方向中穿过板的安装孔，在安装孔的内壁上形成导体层，并将电容器电缆压入到形成有导体层的安装孔内，由此将电容器安装到板，电容器电缆由中心的导线、以预定厚度同轴地覆盖导线的高介电常数材料组成。
附图简介
从下面参考附图给出的优选实施例的说明中，本发明的这些和其它目的和特点将变得很显然，其中：
图1为根据本发明安装半导体芯片的半导体封装的剖面图；
图2A到2D为根据本发明的半导体封装的制造工艺的剖面图；以及
图3A和3B为制造半导体封装使用的电容器电缆的透视图。
优选实施例的说明
下面参考附图详细介绍本发明的优选实施例。
图1为根据本发明的一个实施例的半导体封装结构的剖面图。图中示出了其上安装有半导体芯片10的半导体封装20。本实施例的半导体封装的特点在于电容器30穿过半导体封装20的板22，与半导体芯片10的连接端10a的设置位置匹配。
电容器30由导线32、以预定厚度覆盖导线32的高介电常数材料34、以及覆盖高介电常数材料34的外周边作为导电层的导体包皮36组成。导线32和导体包皮36同心地设置。由导线32、高介电常数材料34和导体包皮36形成的电容器30具有同轴结构。高介电常数材料34用于在导线32和导体包皮36之间获得需要的静电电容量。导线32和导体包皮36作为电容器30的电极。高介电常数材料34由钛酸锶、钛酸钡或其它高介电常数材料或有机材料形成，其中混合高介电常数材料作为填料以获得需要的静电电容量。
在本实施例的半导体封装中，电容器30用于抑制电源电压的波动，由此导线32连接到电源线，覆盖高介电常数材料34外周边的导体包皮36连接到地线变成地电位。由此，电容器30提供在电子电路的电源线和地线之间。
如图1所示，电容器30装入厚度方向中穿过板22的安装孔中作为同轴结构。导线32直接连接到半导体芯片10的连接端10a。设置导线32垂直地穿过电容器30。这既是电容器30的结构部分也是连接连接端10a和电源的布线。为此，连接端10a和电容器以最短的距离连接，同时布线中没有任何弯路。连接电容器30和连接端10a的布线长度最短，并且布线部分的电感最小。因此，当处理几GHz的高频信号时，可以有效地抑制特性失真。在普通的半导体封装结构中，电感为200到300pH，但根据本结构，电感可以减小到10到50pH。
在图1中，参考数字40是提供在信号线的连接部分用于阻抗匹配的同轴电缆。参考数字41为作为信号线的导线，42是低介电常数材料，43是覆盖低介电常数材料42外周边的导体包皮。导体包皮43连接到地线并且变为地电位。同轴电缆部分40的特点为形成同轴结构，将形成信号线的导线41的输入/输出端处的阻抗与特性阻抗匹配。低介电常数材料42是匹配50Ω的特性阻抗使用的介质材料。形成电容器30的介质材料具有30到40的特定介电常数，而低介电常数材料42具有约为3的特定的低介电常数。
在示出的半导体封装的例子中，参考数字45表示类似于导线41的信号线，但没有形成同轴结构，这是由于该信号线用于本实施例的半导体封装中的低频信号的输入/输出。
参考数字46为地线。通过提供在板22内层的互连图形47，地线46电连接到导体包皮36和43，由此导体包皮36和43变成地电位。参考数字50为提供在板22底部的外部连接端子。通过焊料球与板22表面上形成的焊盘52结合形成外部连接端50。
图2A到2D示出了以上半导体封装的制造工艺。
图2A示出了用形成信号线45和地线46以及互连图形47的导线形成的板22。板22可以形成为多层板，由树脂制成的芯板组成，在它的两面上穿过绝缘层叠置有互连层。
图2B示出了在厚度方向中穿过板22形成的安装孔60和62。通过在形成以上提到的电容器30和高频信号使用的同轴电缆部分40的部分处钻孔形成安装孔60和62。形成安装孔60和62，具有的内部直径尺寸与要安装到板22的电容器30和同轴电缆部分40的外部直径尺寸匹配。
图2C示出了电容器30和同轴电缆部分40安装到板22中形成的安装孔60和62中的状态。要将电容器30安装到安装孔60，将预先形成的圆柱形的电容器电缆插入到安装孔60内。
图3A为电容器电缆30a的透视图。电容器电缆30a由以上提到的导线32、高介电常数材料34、以及形成长同轴电缆形的导体包皮36组成。通过将切成预定长度的电容器电缆30a按压到板22的安装孔60内安装电容器30。
通过将电容器30插入到安装孔60内，导体包皮36接触在安装孔60的内壁露出的互连图形47，由此互连图形47和导体包皮36电连接。
注意作为将电容器30安装到安装孔60的方法，除使用图3A所示的电容器电缆30a的方法之外，还可以使用图3B所示的电容器电缆30b的方法。图3B所示的电容器电缆30b没有图3A所示电容器电缆30a的导体包皮36。
当使用图3B所示的电容器电缆30b将电容器30安装到板22时，首先在板22中形成安装孔60，然后镀安装孔60的内壁在安装孔60的内壁形成导体层，接着将图3B所示的电容器电缆30b按压在安装孔60中。此时，导体层变成地电位，提供在安装孔60内壁的导体层的功能与图3A所示用于形成电容器30的电容器电缆30a的导体包皮36的功能相同。
用作板22的信号线的同轴电缆部分40的安装方法与将电容器30安装在板22的方法类似。即，通过按与图3A或3B所示电容器电缆30a或30b相同的方式形成的同轴电缆按压到提供在板22中的安装孔62内，安装图2C所示的同轴电缆部分40。形成的同轴电缆可以带有低介电常数材料42外表面的导体包皮，或不带有导体包皮。当低介电常数材料42外表面不形成导体包皮时，按上面介绍的相同方式镀安装孔62的内壁形成导电层就足够了。
图2D示出了在板22上形成电容器30和同轴电缆部分40之后在板22表面上形成互连图形的状态。通过电镀等在板22的上表面和下表面上形成导体层，然后腐蚀导体层形成预定图形得到互连图形。参考数字52为与外部连接端连接的焊盘，而参考数字54为连接半导体芯片10的突点的焊盘。
以此方式，可以得到安装有在厚度方向中穿过板22的电容器30的半导体封装。如上所述，本发明的半导体封装具有形成电源线作为电容器30一部分的导线32，并且导线32直接连接到连接端10a，电源线的长度最短，由此实现了抑制电源电压波动和减少电感，形成的封装具有极好的高频特性。此外，对于传输高频信号的信号线，通过与特性阻抗匹配，可以改善高频特性。由此，可以得到高频特性优越的半导体封装。
根据本发明的半导体封装及其制造方法，可以容易地将电容器安装到板，由此抑制了电源电压的波动，并且可以使连接电容器和连接端的布线长度最短，以降低电感。因此，可以提供高频特性极优越的半导体封装。
虽然参考为了示例选择的特定实施例介绍了本发明，显然本领域的技术人员可以不脱离本发明的基本概念和范围进行多种修改。

Claims (4)

1.一种半导体封装，安装有电容器用于抑制电源电压波动，其中在厚度方向中穿过板的安装孔中，电容器由以下组成：一端连接到半导体芯片连接端的导线、以预定厚度覆盖导线的高介电常数材料、以及设置在高介电常数材料外周边和安装孔内壁之间的导体层，具有导线作为它的中心的同轴结构。
2.根据权利要求1所述的半导体封装，其中在厚度方向中穿过所述板的安装孔中，提供在所述板上的至少一个信号线由中心的信号线、低介电常数材料、以及导体层组成，形成匹配阻抗的同轴电缆部分。
3.一种半导体封装的制造方法，半导体封装安装有电容器用于抑制电源电压波动，包括：
提供在厚度方向中穿过板的安装孔，以及
将电容器电缆按压到所述安装孔内，由此将电容器安装到所述板，电容器电缆由中心的导线、以预定厚度同轴地覆盖导线的高介电常数材料、以及覆盖高介电常数材料外周边的导体包皮组成。
4.一种半导体封装的制造方法，半导体封装安装有电容器用于抑制电源电压波动，包括：
提供在厚度方向中穿过板的安装孔，
在安装孔的内壁上形成导体层，以及
将电容器电缆压入所述形成有所述导体层的安装孔内，由此将电容器安装到所述板，电容器电缆由中心的导线、以预定厚度同轴地覆盖导线的高介电常数材料组成。
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