CN1411076A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
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- CN1411076A CN1411076A CN02145800A CN02145800A CN1411076A CN 1411076 A CN1411076 A CN 1411076A CN 02145800 A CN02145800 A CN 02145800A CN 02145800 A CN02145800 A CN 02145800A CN 1411076 A CN1411076 A CN 1411076A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 118
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 118
- 238000005530 etching Methods 0.000 claims description 97
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 79
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- 239000000243 solution Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
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Abstract
Description
Claims (20)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001308429 | 2001-10-04 | ||
JP2001308429 | 2001-10-04 | ||
JP2002256229A JP4628644B2 (ja) | 2001-10-04 | 2002-08-30 | 半導体装置の製造方法 |
JP2002256229 | 2002-08-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1411076A true CN1411076A (zh) | 2003-04-16 |
CN1303698C CN1303698C (zh) | 2007-03-07 |
Family
ID=26623690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021458006A Expired - Fee Related CN1303698C (zh) | 2001-10-04 | 2002-10-08 | 半导体器件及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US6800909B2 (zh) |
JP (1) | JP4628644B2 (zh) |
KR (1) | KR100862816B1 (zh) |
CN (1) | CN1303698C (zh) |
TW (1) | TW565938B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100452302C (zh) * | 2003-11-13 | 2009-01-14 | 国际商业机器公司 | 在晶体管栅极结构上使用抗蚀刻衬里的方法和结构 |
CN101452853B (zh) * | 2007-12-07 | 2010-09-29 | 中芯国际集成电路制造(上海)有限公司 | Mos晶体管的形成方法 |
CN101621006B (zh) * | 2008-07-03 | 2011-01-12 | 中芯国际集成电路制造(上海)有限公司 | 利用锗预非晶处理来形成p-型轻度掺杂的漏极区的方法 |
CN113223965A (zh) * | 2021-04-19 | 2021-08-06 | 杭州电子科技大学 | 一种补偿负电容晶体管内部栅电势损失的方法 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3975099B2 (ja) * | 2002-03-26 | 2007-09-12 | 富士通株式会社 | 半導体装置の製造方法 |
EP1986240B1 (en) * | 2003-10-23 | 2016-03-09 | Fujitsu Semiconductor Limited | Semiconductor device and method for manufacturing semiconductor device |
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CN100452302C (zh) * | 2003-11-13 | 2009-01-14 | 国际商业机器公司 | 在晶体管栅极结构上使用抗蚀刻衬里的方法和结构 |
CN101452853B (zh) * | 2007-12-07 | 2010-09-29 | 中芯国际集成电路制造(上海)有限公司 | Mos晶体管的形成方法 |
CN101621006B (zh) * | 2008-07-03 | 2011-01-12 | 中芯国际集成电路制造(上海)有限公司 | 利用锗预非晶处理来形成p-型轻度掺杂的漏极区的方法 |
CN113223965A (zh) * | 2021-04-19 | 2021-08-06 | 杭州电子科技大学 | 一种补偿负电容晶体管内部栅电势损失的方法 |
CN113223965B (zh) * | 2021-04-19 | 2023-02-24 | 杭州电子科技大学 | 一种补偿负电容晶体管内部栅电势损失的方法 |
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KR20030029024A (ko) | 2003-04-11 |
US20040224517A1 (en) | 2004-11-11 |
CN1303698C (zh) | 2007-03-07 |
TW565938B (en) | 2003-12-11 |
JP2003179227A (ja) | 2003-06-27 |
US6800909B2 (en) | 2004-10-05 |
US7109128B2 (en) | 2006-09-19 |
KR100862816B1 (ko) | 2008-10-13 |
US20030067045A1 (en) | 2003-04-10 |
JP4628644B2 (ja) | 2011-02-09 |
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