CN1320657C - 带有不同硅厚度的绝缘膜上硅装置 - Google Patents

带有不同硅厚度的绝缘膜上硅装置 Download PDF

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Publication number
CN1320657C
CN1320657C CNB028255488A CN02825548A CN1320657C CN 1320657 C CN1320657 C CN 1320657C CN B028255488 A CNB028255488 A CN B028255488A CN 02825548 A CN02825548 A CN 02825548A CN 1320657 C CN1320657 C CN 1320657C
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China
Prior art keywords
silicon layer
layer
silicon
source
transistor
Prior art date
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Expired - Fee Related
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CNB028255488A
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English (en)
Chinese (zh)
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CN1606807A (zh
Inventor
D·A·尚
W·G·恩
J·G·佩尔兰
M·W·米歇尔
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GlobalFoundries Inc
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Advanced Micro Devices Inc
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Publication of CN1606807A publication Critical patent/CN1606807A/zh
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Publication of CN1320657C publication Critical patent/CN1320657C/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

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  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
CNB028255488A 2001-12-20 2002-12-19 带有不同硅厚度的绝缘膜上硅装置 Expired - Fee Related CN1320657C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/023,350 US6764917B1 (en) 2001-12-20 2001-12-20 SOI device with different silicon thicknesses
US10/023,350 2001-12-20

Publications (2)

Publication Number Publication Date
CN1606807A CN1606807A (zh) 2005-04-13
CN1320657C true CN1320657C (zh) 2007-06-06

Family

ID=21814574

Family Applications (1)

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CNB028255488A Expired - Fee Related CN1320657C (zh) 2001-12-20 2002-12-19 带有不同硅厚度的绝缘膜上硅装置

Country Status (8)

Country Link
US (1) US6764917B1 (enExample)
JP (1) JP2005514770A (enExample)
KR (1) KR100948938B1 (enExample)
CN (1) CN1320657C (enExample)
AU (1) AU2002357367A1 (enExample)
DE (1) DE10297583B4 (enExample)
GB (1) GB2407703B (enExample)
WO (1) WO2003054966A1 (enExample)

Families Citing this family (20)

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JP2003124345A (ja) * 2001-10-11 2003-04-25 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
US6764917B1 (en) 2001-12-20 2004-07-20 Advanced Micro Devices, Inc. SOI device with different silicon thicknesses
US6835983B2 (en) * 2002-10-25 2004-12-28 International Business Machines Corporation Silicon-on-insulator (SOI) integrated circuit (IC) chip with the silicon layers consisting of regions of different thickness
KR100489802B1 (ko) * 2002-12-18 2005-05-16 한국전자통신연구원 고전압 및 저전압 소자의 구조와 그 제조 방법
US6861716B1 (en) * 2003-10-31 2005-03-01 International Business Machines Corporation Ladder-type gate structure for four-terminal SOI semiconductor device
WO2006038164A1 (en) * 2004-10-08 2006-04-13 Koninklijke Philips Electronics N.V. Semiconductor device having substrate comprising layer with different thicknesses and method of manufacturing the same
US7666735B1 (en) * 2005-02-10 2010-02-23 Advanced Micro Devices, Inc. Method for forming semiconductor devices with active silicon height variation
JP5003857B2 (ja) * 2005-11-02 2012-08-15 セイコーエプソン株式会社 半導体装置の製造方法
US7986029B2 (en) * 2005-11-08 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Dual SOI structure
US7402477B2 (en) * 2006-03-30 2008-07-22 Freescale Semiconductor, Inc. Method of making a multiple crystal orientation semiconductor device
JP5548356B2 (ja) * 2007-11-05 2014-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7939389B2 (en) * 2008-04-18 2011-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20160071947A1 (en) * 2014-09-10 2016-03-10 Globalfoundries Inc. Method including a replacement of a dummy gate structure with a gate structure including a ferroelectric material
FR3051973B1 (fr) * 2016-05-24 2018-10-19 X-Fab France Procede de formation de transistors pdsoi et fdsoi sur un meme substrat
US10141229B2 (en) * 2016-09-29 2018-11-27 Globalfoundries Inc. Process for forming semiconductor layers of different thickness in FDSOI technologies
JP2018148123A (ja) * 2017-03-08 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び半導体装置の製造方法
FR3080486B1 (fr) * 2018-04-24 2020-03-27 X-Fab France Procede de formation d'un dispositif microelectronique
US11004867B2 (en) * 2018-06-28 2021-05-11 Taiwan Semiconductor Manufacturing Co., Ltd. Embedded ferroelectric memory in high-k first technology
US10748934B2 (en) 2018-08-28 2020-08-18 Qualcomm Incorporated Silicon on insulator with multiple semiconductor thicknesses using layer transfer
US11348944B2 (en) 2020-04-17 2022-05-31 Taiwan Semiconductor Manufacturing Company Limited Semiconductor wafer with devices having different top layer thicknesses

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5463238A (en) * 1992-02-25 1995-10-31 Seiko Instruments Inc. CMOS structure with parasitic channel prevention
US5574292A (en) * 1992-05-13 1996-11-12 Seiko Instruments Inc. Semiconductor device with monosilicon layer
CN1215229A (zh) * 1997-06-05 1999-04-28 日本电气株式会社 一种半导体器件的制造方法
US5940691A (en) * 1997-08-20 1999-08-17 Micron Technology, Inc. Methods of forming SOI insulator layers and methods of forming transistor devices

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
EP0173953B1 (en) * 1984-08-28 1991-07-17 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device having a gate electrode
US5306942A (en) * 1989-10-11 1994-04-26 Nippondenso Co., Ltd. Semiconductor device having a shield which is maintained at a reference potential
JPH07106579A (ja) * 1993-10-08 1995-04-21 Hitachi Ltd 半導体装置とその製造方法
US6060748A (en) * 1996-12-26 2000-05-09 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device using a silicon-on-insulator substrate
US5909400A (en) * 1997-08-22 1999-06-01 International Business Machines Corporation Three device BICMOS gain cell
JPH11176925A (ja) 1997-12-05 1999-07-02 Asahi Kasei Micro Syst Co Ltd 半導体装置の製造方法
JP2000049237A (ja) * 1998-07-28 2000-02-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4493153B2 (ja) * 2000-04-19 2010-06-30 シャープ株式会社 窒化物系半導体発光素子
US6537891B1 (en) * 2000-08-29 2003-03-25 Micron Technology, Inc. Silicon on insulator DRAM process utilizing both fully and partially depleted devices
US6764917B1 (en) 2001-12-20 2004-07-20 Advanced Micro Devices, Inc. SOI device with different silicon thicknesses
US20060110765A1 (en) * 2004-11-23 2006-05-25 Wang Xiao B Detection of nucleic acid variation by cleavage-amplification (CleavAmp) method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5463238A (en) * 1992-02-25 1995-10-31 Seiko Instruments Inc. CMOS structure with parasitic channel prevention
US5574292A (en) * 1992-05-13 1996-11-12 Seiko Instruments Inc. Semiconductor device with monosilicon layer
CN1215229A (zh) * 1997-06-05 1999-04-28 日本电气株式会社 一种半导体器件的制造方法
US5940691A (en) * 1997-08-20 1999-08-17 Micron Technology, Inc. Methods of forming SOI insulator layers and methods of forming transistor devices
US6110765A (en) * 1997-08-20 2000-08-29 Micron Technology, Inc. Semiconductor devices and assemblies

Also Published As

Publication number Publication date
JP2005514770A (ja) 2005-05-19
GB2407703A (en) 2005-05-04
KR100948938B1 (ko) 2010-03-23
US6764917B1 (en) 2004-07-20
AU2002357367A1 (en) 2003-07-09
GB2407703B (en) 2005-11-30
GB0416018D0 (en) 2004-08-18
CN1606807A (zh) 2005-04-13
DE10297583T5 (de) 2004-11-11
WO2003054966A1 (en) 2003-07-03
DE10297583B4 (de) 2010-10-14
KR20040069186A (ko) 2004-08-04

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