KR100948938B1 - 다른 실리콘 두께를 갖는 ｓｏｉ 소자 - Google Patents

다른 실리콘 두께를 갖는 ｓｏｉ 소자 Download PDF

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Publication number
KR100948938B1
KR100948938B1 KR1020047009734A KR20047009734A KR100948938B1 KR 100948938 B1 KR100948938 B1 KR 100948938B1 KR 1020047009734 A KR1020047009734 A KR 1020047009734A KR 20047009734 A KR20047009734 A KR 20047009734A KR 100948938 B1 KR100948938 B1 KR 100948938B1
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South Korea
Prior art keywords
silicon layer
transistor
silicon
source
layer
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Expired - Fee Related
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English (en)
Korean (ko)
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KR20040069186A (ko
Inventor
찬다린에이.
엔윌리엄지.
펠러린존지.
마이클마크더블유.
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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Publication of KR20040069186A publication Critical patent/KR20040069186A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

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  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020047009734A 2001-12-20 2002-12-19 다른 실리콘 두께를 갖는 ｓｏｉ 소자 Expired - Fee Related KR100948938B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/023,350 US6764917B1 (en) 2001-12-20 2001-12-20 SOI device with different silicon thicknesses
US10/023,350 2001-12-20
PCT/US2002/041102 WO2003054966A1 (en) 2001-12-20 2002-12-19 Soi device with different silicon thicknesses

Publications (2)

Publication Number Publication Date
KR20040069186A KR20040069186A (ko) 2004-08-04
KR100948938B1 true KR100948938B1 (ko) 2010-03-23

Family

ID=21814574

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047009734A Expired - Fee Related KR100948938B1 (ko) 2001-12-20 2002-12-19 다른 실리콘 두께를 갖는 ｓｏｉ 소자

Country Status (8)

Country Link
US (1) US6764917B1 (enExample)
JP (1) JP2005514770A (enExample)
KR (1) KR100948938B1 (enExample)
CN (1) CN1320657C (enExample)
AU (1) AU2002357367A1 (enExample)
DE (1) DE10297583B4 (enExample)
GB (1) GB2407703B (enExample)
WO (1) WO2003054966A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003124345A (ja) * 2001-10-11 2003-04-25 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
US6764917B1 (en) 2001-12-20 2004-07-20 Advanced Micro Devices, Inc. SOI device with different silicon thicknesses
US6835983B2 (en) * 2002-10-25 2004-12-28 International Business Machines Corporation Silicon-on-insulator (SOI) integrated circuit (IC) chip with the silicon layers consisting of regions of different thickness
KR100489802B1 (ko) * 2002-12-18 2005-05-16 한국전자통신연구원 고전압 및 저전압 소자의 구조와 그 제조 방법
US6861716B1 (en) * 2003-10-31 2005-03-01 International Business Machines Corporation Ladder-type gate structure for four-terminal SOI semiconductor device
WO2006038164A1 (en) * 2004-10-08 2006-04-13 Koninklijke Philips Electronics N.V. Semiconductor device having substrate comprising layer with different thicknesses and method of manufacturing the same
US7666735B1 (en) * 2005-02-10 2010-02-23 Advanced Micro Devices, Inc. Method for forming semiconductor devices with active silicon height variation
JP5003857B2 (ja) * 2005-11-02 2012-08-15 セイコーエプソン株式会社 半導体装置の製造方法
US7986029B2 (en) * 2005-11-08 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Dual SOI structure
US7402477B2 (en) * 2006-03-30 2008-07-22 Freescale Semiconductor, Inc. Method of making a multiple crystal orientation semiconductor device
JP5548356B2 (ja) * 2007-11-05 2014-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7939389B2 (en) * 2008-04-18 2011-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20160071947A1 (en) * 2014-09-10 2016-03-10 Globalfoundries Inc. Method including a replacement of a dummy gate structure with a gate structure including a ferroelectric material
FR3051973B1 (fr) * 2016-05-24 2018-10-19 X-Fab France Procede de formation de transistors pdsoi et fdsoi sur un meme substrat
US10141229B2 (en) * 2016-09-29 2018-11-27 Globalfoundries Inc. Process for forming semiconductor layers of different thickness in FDSOI technologies
JP2018148123A (ja) * 2017-03-08 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び半導体装置の製造方法
FR3080486B1 (fr) * 2018-04-24 2020-03-27 X-Fab France Procede de formation d'un dispositif microelectronique
US11004867B2 (en) * 2018-06-28 2021-05-11 Taiwan Semiconductor Manufacturing Co., Ltd. Embedded ferroelectric memory in high-k first technology
US10748934B2 (en) 2018-08-28 2020-08-18 Qualcomm Incorporated Silicon on insulator with multiple semiconductor thicknesses using layer transfer
US11348944B2 (en) 2020-04-17 2022-05-31 Taiwan Semiconductor Manufacturing Company Limited Semiconductor wafer with devices having different top layer thicknesses

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5463238A (en) * 1992-02-25 1995-10-31 Seiko Instruments Inc. CMOS structure with parasitic channel prevention
JPH11176925A (ja) * 1997-12-05 1999-07-02 Asahi Kasei Micro Syst Co Ltd 半導体装置の製造方法
US5940691A (en) * 1997-08-20 1999-08-17 Micron Technology, Inc. Methods of forming SOI insulator layers and methods of forming transistor devices
US20060110765A1 (en) * 2004-11-23 2006-05-25 Wang Xiao B Detection of nucleic acid variation by cleavage-amplification (CleavAmp) method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0173953B1 (en) * 1984-08-28 1991-07-17 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device having a gate electrode
US5306942A (en) * 1989-10-11 1994-04-26 Nippondenso Co., Ltd. Semiconductor device having a shield which is maintained at a reference potential
TW214603B (en) * 1992-05-13 1993-10-11 Seiko Electron Co Ltd Semiconductor device
JPH07106579A (ja) * 1993-10-08 1995-04-21 Hitachi Ltd 半導体装置とその製造方法
US6060748A (en) * 1996-12-26 2000-05-09 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device using a silicon-on-insulator substrate
JP3114654B2 (ja) * 1997-06-05 2000-12-04 日本電気株式会社 半導体装置の製造方法
US5909400A (en) * 1997-08-22 1999-06-01 International Business Machines Corporation Three device BICMOS gain cell
JP2000049237A (ja) * 1998-07-28 2000-02-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4493153B2 (ja) * 2000-04-19 2010-06-30 シャープ株式会社 窒化物系半導体発光素子
US6537891B1 (en) * 2000-08-29 2003-03-25 Micron Technology, Inc. Silicon on insulator DRAM process utilizing both fully and partially depleted devices
US6764917B1 (en) 2001-12-20 2004-07-20 Advanced Micro Devices, Inc. SOI device with different silicon thicknesses

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5463238A (en) * 1992-02-25 1995-10-31 Seiko Instruments Inc. CMOS structure with parasitic channel prevention
US5940691A (en) * 1997-08-20 1999-08-17 Micron Technology, Inc. Methods of forming SOI insulator layers and methods of forming transistor devices
US6110765A (en) * 1997-08-20 2000-08-29 Micron Technology, Inc. Semiconductor devices and assemblies
JPH11176925A (ja) * 1997-12-05 1999-07-02 Asahi Kasei Micro Syst Co Ltd 半導体装置の製造方法
US20060110765A1 (en) * 2004-11-23 2006-05-25 Wang Xiao B Detection of nucleic acid variation by cleavage-amplification (CleavAmp) method

Also Published As

Publication number Publication date
JP2005514770A (ja) 2005-05-19
GB2407703A (en) 2005-05-04
CN1320657C (zh) 2007-06-06
US6764917B1 (en) 2004-07-20
AU2002357367A1 (en) 2003-07-09
GB2407703B (en) 2005-11-30
GB0416018D0 (en) 2004-08-18
CN1606807A (zh) 2005-04-13
DE10297583T5 (de) 2004-11-11
WO2003054966A1 (en) 2003-07-03
DE10297583B4 (de) 2010-10-14
KR20040069186A (ko) 2004-08-04

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