CN1309049C - 制造闪存装置的方法 - Google Patents

制造闪存装置的方法 Download PDF

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Publication number
CN1309049C
CN1309049C CNB2004100565681A CN200410056568A CN1309049C CN 1309049 C CN1309049 C CN 1309049C CN B2004100565681 A CNB2004100565681 A CN B2004100565681A CN 200410056568 A CN200410056568 A CN 200410056568A CN 1309049 C CN1309049 C CN 1309049C
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CN
China
Prior art keywords
film
polysilicon
polysilicon film
oxidation
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004100565681A
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English (en)
Chinese (zh)
Other versions
CN1591831A (zh
Inventor
李圣勋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
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Hynix Semiconductor Inc
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Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of CN1591831A publication Critical patent/CN1591831A/zh
Application granted granted Critical
Publication of CN1309049C publication Critical patent/CN1309049C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
CNB2004100565681A 2003-09-05 2004-08-10 制造闪存装置的方法 Expired - Fee Related CN1309049C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2003-0062073A KR100537278B1 (ko) 2003-09-05 2003-09-05 플래쉬 메모리소자의 제조방법
KR62073/03 2003-09-05
KR62073/2003 2003-09-05

Publications (2)

Publication Number Publication Date
CN1591831A CN1591831A (zh) 2005-03-09
CN1309049C true CN1309049C (zh) 2007-04-04

Family

ID=33516455

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100565681A Expired - Fee Related CN1309049C (zh) 2003-09-05 2004-08-10 制造闪存装置的方法

Country Status (6)

Country Link
US (1) US6835620B1 (de)
JP (1) JP4624014B2 (de)
KR (1) KR100537278B1 (de)
CN (1) CN1309049C (de)
DE (1) DE102004031516A1 (de)
TW (1) TWI255016B (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006302950A (ja) * 2005-04-15 2006-11-02 Renesas Technology Corp 不揮発性半導体装置および不揮発性半導体装置の製造方法
KR100751687B1 (ko) * 2005-06-30 2007-08-23 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조방법
JP5526162B2 (ja) * 2012-01-16 2014-06-18 ルネサスエレクトロニクス株式会社 不揮発性半導体装置および不揮発性半導体装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1262998A (zh) * 1999-02-10 2000-08-16 李韫言 高传热效率的热汽喷墨打印头
US6180454B1 (en) * 1999-10-29 2001-01-30 Advanced Micro Devices, Inc. Method for forming flash memory devices
US6437417B1 (en) * 2000-08-16 2002-08-20 Micron Technology, Inc. Method for making shallow trenches for isolation
CN1428846A (zh) * 2001-12-22 2003-07-09 海力士半导体有限公司 制造闪存单元的方法

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Publication number Priority date Publication date Assignee Title
JPS5177079A (ja) * 1974-12-27 1976-07-03 Fujitsu Ltd Handotaisochinoseizohoho
JPS5389375A (en) * 1977-01-17 1978-08-05 Nec Corp Production of semiconductor device
JPS5544725A (en) * 1978-09-27 1980-03-29 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device and its manufacture
JPS61176114A (ja) * 1985-01-31 1986-08-07 Fujitsu Ltd 半導体装置の製造方法
JP3207505B2 (ja) * 1992-03-27 2001-09-10 株式会社半導体エネルギー研究所 多孔質珪素部材の作製方法
JPH07235691A (ja) * 1994-02-24 1995-09-05 Nippon Steel Corp 発光素子
JPH07288337A (ja) * 1994-04-15 1995-10-31 Nippon Steel Corp 発光素子
US5510633A (en) * 1994-06-08 1996-04-23 Xerox Corporation Porous silicon light emitting diode arrays and method of fabrication
US5599727A (en) * 1994-12-15 1997-02-04 Sharp Kabushiki Kaisha Method for producing a floating gate memory device including implanting ions through an oxidized portion of the silicon film from which the floating gate is formed
JP3344162B2 (ja) * 1995-04-28 2002-11-11 ソニー株式会社 電界効果型半導体装置の製造方法
JP3490903B2 (ja) * 1997-09-11 2004-01-26 Ｋｄｄｉ株式会社 半導体発光素子およびその製造方法
JP3867378B2 (ja) * 1997-12-09 2007-01-10 ソニー株式会社 半導体不揮発性記憶装置の製造方法
US6635914B2 (en) * 2000-09-08 2003-10-21 Axon Technologies Corp. Microelectronic programmable device and methods of forming and programming the same
JP4423576B2 (ja) * 1998-12-10 2010-03-03 富士通マイクロエレクトロニクス株式会社 半導体記憶装置及びその製造方法
JP2000223596A (ja) * 1999-02-03 2000-08-11 Sony Corp 半導体不揮発性記憶装置およびその製造方法
CN1205685C (zh) * 1999-11-17 2005-06-08 尼电源系统公司 具有硅基片的燃料电池
JP4109845B2 (ja) * 2001-08-10 2008-07-02 株式会社東芝 不揮発性半導体記憶装置の製造方法
KR100436289B1 (ko) * 2002-07-18 2004-06-16 주식회사 하이닉스반도체 플래시 메모리 셀의 게이트 구조와 그 형성방법 및유전체막 형성방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1262998A (zh) * 1999-02-10 2000-08-16 李韫言 高传热效率的热汽喷墨打印头
US6180454B1 (en) * 1999-10-29 2001-01-30 Advanced Micro Devices, Inc. Method for forming flash memory devices
US6437417B1 (en) * 2000-08-16 2002-08-20 Micron Technology, Inc. Method for making shallow trenches for isolation
CN1428846A (zh) * 2001-12-22 2003-07-09 海力士半导体有限公司 制造闪存单元的方法

Also Published As

Publication number Publication date
JP2005086198A (ja) 2005-03-31
TW200516724A (en) 2005-05-16
JP4624014B2 (ja) 2011-02-02
CN1591831A (zh) 2005-03-09
DE102004031516A1 (de) 2005-03-31
KR20050024852A (ko) 2005-03-11
US6835620B1 (en) 2004-12-28
KR100537278B1 (ko) 2005-12-19
TWI255016B (en) 2006-05-11

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Granted publication date: 20070404

Termination date: 20130810