CN1309049C - 制造闪存装置的方法 - Google Patents
制造闪存装置的方法 Download PDFInfo
- Publication number
- CN1309049C CN1309049C CNB2004100565681A CN200410056568A CN1309049C CN 1309049 C CN1309049 C CN 1309049C CN B2004100565681 A CNB2004100565681 A CN B2004100565681A CN 200410056568 A CN200410056568 A CN 200410056568A CN 1309049 C CN1309049 C CN 1309049C
- Authority
- CN
- China
- Prior art keywords
- film
- polysilicon
- polysilicon film
- oxidation
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 54
- 229920005591 polysilicon Polymers 0.000 claims abstract description 54
- 238000007667 floating Methods 0.000 claims abstract description 35
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 150000004767 nitrides Chemical class 0.000 claims abstract description 18
- 229910021426 porous silicon Inorganic materials 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000000059 patterning Methods 0.000 claims abstract description 5
- 230000003647 oxidation Effects 0.000 claims description 34
- 230000004888 barrier function Effects 0.000 claims description 19
- 238000011282 treatment Methods 0.000 claims description 12
- 230000000052 comparative effect Effects 0.000 claims description 5
- 238000009279 wet oxidation reaction Methods 0.000 claims description 3
- 239000008151 electrolyte solution Substances 0.000 claims description 2
- 238000002955 isolation Methods 0.000 abstract 4
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 3
- 229910021342 tungsten silicide Inorganic materials 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0062073A KR100537278B1 (ko) | 2003-09-05 | 2003-09-05 | 플래쉬 메모리소자의 제조방법 |
KR62073/03 | 2003-09-05 | ||
KR62073/2003 | 2003-09-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1591831A CN1591831A (zh) | 2005-03-09 |
CN1309049C true CN1309049C (zh) | 2007-04-04 |
Family
ID=33516455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100565681A Expired - Fee Related CN1309049C (zh) | 2003-09-05 | 2004-08-10 | 制造闪存装置的方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6835620B1 (de) |
JP (1) | JP4624014B2 (de) |
KR (1) | KR100537278B1 (de) |
CN (1) | CN1309049C (de) |
DE (1) | DE102004031516A1 (de) |
TW (1) | TWI255016B (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006302950A (ja) * | 2005-04-15 | 2006-11-02 | Renesas Technology Corp | 不揮発性半導体装置および不揮発性半導体装置の製造方法 |
KR100751687B1 (ko) * | 2005-06-30 | 2007-08-23 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자의 제조방법 |
JP5526162B2 (ja) * | 2012-01-16 | 2014-06-18 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体装置および不揮発性半導体装置の製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1262998A (zh) * | 1999-02-10 | 2000-08-16 | 李韫言 | 高传热效率的热汽喷墨打印头 |
US6180454B1 (en) * | 1999-10-29 | 2001-01-30 | Advanced Micro Devices, Inc. | Method for forming flash memory devices |
US6437417B1 (en) * | 2000-08-16 | 2002-08-20 | Micron Technology, Inc. | Method for making shallow trenches for isolation |
CN1428846A (zh) * | 2001-12-22 | 2003-07-09 | 海力士半导体有限公司 | 制造闪存单元的方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5177079A (ja) * | 1974-12-27 | 1976-07-03 | Fujitsu Ltd | Handotaisochinoseizohoho |
JPS5389375A (en) * | 1977-01-17 | 1978-08-05 | Nec Corp | Production of semiconductor device |
JPS5544725A (en) * | 1978-09-27 | 1980-03-29 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor device and its manufacture |
JPS61176114A (ja) * | 1985-01-31 | 1986-08-07 | Fujitsu Ltd | 半導体装置の製造方法 |
JP3207505B2 (ja) * | 1992-03-27 | 2001-09-10 | 株式会社半導体エネルギー研究所 | 多孔質珪素部材の作製方法 |
JPH07235691A (ja) * | 1994-02-24 | 1995-09-05 | Nippon Steel Corp | 発光素子 |
JPH07288337A (ja) * | 1994-04-15 | 1995-10-31 | Nippon Steel Corp | 発光素子 |
US5510633A (en) * | 1994-06-08 | 1996-04-23 | Xerox Corporation | Porous silicon light emitting diode arrays and method of fabrication |
US5599727A (en) * | 1994-12-15 | 1997-02-04 | Sharp Kabushiki Kaisha | Method for producing a floating gate memory device including implanting ions through an oxidized portion of the silicon film from which the floating gate is formed |
JP3344162B2 (ja) * | 1995-04-28 | 2002-11-11 | ソニー株式会社 | 電界効果型半導体装置の製造方法 |
JP3490903B2 (ja) * | 1997-09-11 | 2004-01-26 | Kddi株式会社 | 半導体発光素子およびその製造方法 |
JP3867378B2 (ja) * | 1997-12-09 | 2007-01-10 | ソニー株式会社 | 半導体不揮発性記憶装置の製造方法 |
US6635914B2 (en) * | 2000-09-08 | 2003-10-21 | Axon Technologies Corp. | Microelectronic programmable device and methods of forming and programming the same |
JP4423576B2 (ja) * | 1998-12-10 | 2010-03-03 | 富士通マイクロエレクトロニクス株式会社 | 半導体記憶装置及びその製造方法 |
JP2000223596A (ja) * | 1999-02-03 | 2000-08-11 | Sony Corp | 半導体不揮発性記憶装置およびその製造方法 |
CN1205685C (zh) * | 1999-11-17 | 2005-06-08 | 尼电源系统公司 | 具有硅基片的燃料电池 |
JP4109845B2 (ja) * | 2001-08-10 | 2008-07-02 | 株式会社東芝 | 不揮発性半導体記憶装置の製造方法 |
KR100436289B1 (ko) * | 2002-07-18 | 2004-06-16 | 주식회사 하이닉스반도체 | 플래시 메모리 셀의 게이트 구조와 그 형성방법 및유전체막 형성방법 |
-
2003
- 2003-09-05 KR KR10-2003-0062073A patent/KR100537278B1/ko not_active IP Right Cessation
-
2004
- 2004-06-28 JP JP2004189668A patent/JP4624014B2/ja not_active Expired - Fee Related
- 2004-06-29 DE DE102004031516A patent/DE102004031516A1/de not_active Withdrawn
- 2004-06-30 TW TW093119289A patent/TWI255016B/zh not_active IP Right Cessation
- 2004-06-30 US US10/881,461 patent/US6835620B1/en not_active Expired - Lifetime
- 2004-08-10 CN CNB2004100565681A patent/CN1309049C/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1262998A (zh) * | 1999-02-10 | 2000-08-16 | 李韫言 | 高传热效率的热汽喷墨打印头 |
US6180454B1 (en) * | 1999-10-29 | 2001-01-30 | Advanced Micro Devices, Inc. | Method for forming flash memory devices |
US6437417B1 (en) * | 2000-08-16 | 2002-08-20 | Micron Technology, Inc. | Method for making shallow trenches for isolation |
CN1428846A (zh) * | 2001-12-22 | 2003-07-09 | 海力士半导体有限公司 | 制造闪存单元的方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2005086198A (ja) | 2005-03-31 |
TW200516724A (en) | 2005-05-16 |
JP4624014B2 (ja) | 2011-02-02 |
CN1591831A (zh) | 2005-03-09 |
DE102004031516A1 (de) | 2005-03-31 |
KR20050024852A (ko) | 2005-03-11 |
US6835620B1 (en) | 2004-12-28 |
KR100537278B1 (ko) | 2005-12-19 |
TWI255016B (en) | 2006-05-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070404 Termination date: 20130810 |