CN1302327A - 用于去除抗光蚀剂和蚀刻残留物的含有氟化物的酸性组合物 - Google Patents

用于去除抗光蚀剂和蚀刻残留物的含有氟化物的酸性组合物 Download PDF

Info

Publication number
CN1302327A
CN1302327A CN00800080A CN00800080A CN1302327A CN 1302327 A CN1302327 A CN 1302327A CN 00800080 A CN00800080 A CN 00800080A CN 00800080 A CN00800080 A CN 00800080A CN 1302327 A CN1302327 A CN 1302327A
Authority
CN
China
Prior art keywords
composition
acid
water
substrate
acetate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN00800080A
Other languages
English (en)
Other versions
CN1176199C (zh
Inventor
达里尔·W·彼得斯
伊尔·E·沃德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ashland Inc
Original Assignee
Ashland Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ashland Inc filed Critical Ashland Inc
Publication of CN1302327A publication Critical patent/CN1302327A/zh
Application granted granted Critical
Publication of CN1176199C publication Critical patent/CN1176199C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D9/00—Compositions of detergents based essentially on soap
    • C11D9/04—Compositions of detergents based essentially on soap containing compounding ingredients other than soaps
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • C11D7/30—Halogenated hydrocarbons
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3263—Amides or imides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5013—Organic solvents containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D9/00—Compositions of detergents based essentially on soap
    • C11D9/04—Compositions of detergents based essentially on soap containing compounding ingredients other than soaps
    • C11D9/06—Inorganic compounds
    • C11D9/08—Water-soluble compounds
    • C11D9/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D9/00—Compositions of detergents based essentially on soap
    • C11D9/04—Compositions of detergents based essentially on soap containing compounding ingredients other than soaps
    • C11D9/22—Organic compounds, e.g. vitamins
    • C11D9/26—Organic compounds, e.g. vitamins containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D9/00—Compositions of detergents based essentially on soap
    • C11D9/04—Compositions of detergents based essentially on soap containing compounding ingredients other than soaps
    • C11D9/22—Organic compounds, e.g. vitamins
    • C11D9/26—Organic compounds, e.g. vitamins containing oxygen
    • C11D9/265—Organic compounds, e.g. vitamins containing oxygen containing glycerol
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D9/00—Compositions of detergents based essentially on soap
    • C11D9/04—Compositions of detergents based essentially on soap containing compounding ingredients other than soaps
    • C11D9/22—Organic compounds, e.g. vitamins
    • C11D9/30—Organic compounds, e.g. vitamins containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D9/00—Compositions of detergents based essentially on soap
    • C11D9/04—Compositions of detergents based essentially on soap containing compounding ingredients other than soaps
    • C11D9/22—Organic compounds, e.g. vitamins
    • C11D9/38—Products in which the composition is not well defined
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D9/00—Compositions of detergents based essentially on soap
    • C11D9/04—Compositions of detergents based essentially on soap containing compounding ingredients other than soaps
    • C11D9/44—Perfumes; Colouring materials; Brightening agents ; Bleaching agents
    • C11D9/442—Perfumes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/267—Heterocyclic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/038—Post-treatment of the bonding area
    • H01L2224/0381—Cleaning, e.g. oxide removal step, desmearing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Emergency Medicine (AREA)
  • Inorganic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

本发明涉及用于去除抗光蚀剂和有机和无机残留物的组合物,和除去抗光蚀剂和蚀刻残留物的方法。该组合物是含有氟化物和有机极性溶剂的酸性水基组合物。该组合物不含二元醇并具有低的表面张力和粘度。腐蚀抑制剂可选择性地存在于该组合物中。

Description

用于去除抗光蚀剂和蚀刻残留物的含有氟化物的酸性组合物
                    发明背景
本申请涉及低表面张力、低粘性的含有氟化物和有机极性溶剂的酸性水基组合物，其用于去除抗光蚀剂和有机和无机蚀刻或灰烬残留物，和涉及用于去除抗光蚀剂和蚀刻或灰烬残留物的方法。更具体地说，本发明涉及被缓冲的具有pH值约3-6的组合物和其在室温或以上温度下操作的工艺中，用于去除抗光蚀剂和蚀刻残留物的用途。本发明组合物一般不含有二元醇，特别是亚烷基二醇和聚氧亚烷基二醇。在制备半导体和半导体微电路中，通常需要用有机聚合材料涂覆基片材料。一些基片材料的例子包括铝、钛、铜、二氧化硅涂覆的硅晶片，其任选地含有铝、钛或铜金属等成份。一般，有机聚合材料是抗光蚀剂材料。这种材料当铺展暴露于光后将形成蚀刻膜。在后续的加工步骤中，这种有机聚合材料(抗光蚀剂)必须从基片的表面除去。从基片除去抗光蚀剂的一种普通方法是采用湿化学方法。被配制的用于从基片除去抗光蚀剂的湿化学组合物必须不侵蚀、溶解或钝化任何金属电路的表面；化学改变无机基片；或破坏其基片。除去抗光蚀剂的另一种方法是采用干粉法，其中采用应用氧或形成气体(氢气)的等离子体灰烬来除去抗光蚀剂。在许多情况下，等离子体灰烬法留下了残留物或副产物。残留物或副产品可以是抗光蚀剂本身或抗光蚀剂、底层基片和蚀刻气体的混合物。这些残留物或副产物通常指的是侧壁的聚合物、遮蔽物或栅栏物。
湿化学法除去抗光蚀剂和有机和无机蚀刻残留物所使用的各种组合物是现有技术已知的。US5,698,503公开了一种去除抗光蚀剂和残留物的组合物，其含有多元醇、氟化铵、有机极性溶剂、水和酸性缓冲化合物，并且乙酸的用量足以使pH大于约4和小于7。该专利公开了丙二醇和聚氧亚烷基二醇作为多元醇，各组份例如二甲基亚砜、二甲基乙酰胺、N-甲基吡咯烷酮和γ-丁内酯作为极性溶剂。US5676760公开了用氯化铵、乙酸铵、氟化铵、硝酸铵、溴化铵、碘化铵、硫酸铵、草酸铵、碳酸铵、柠檬酸铵、HCl、或氨和其与去离子水的混合物的电解质溶液处理半导体基片。US5,571,447公开了去除抗光蚀剂和残留物的组合物，其含有多元醇、氟硼酸、含氟的化合物和极性溶剂。组合物的pH低于5。该发明公开了丙二醇和聚氧亚烷基二醇作为多元醇，极性溶剂优选水和/或二甲基亚砜。US5,320,709公开了一种方法，其能选择去除有机金属残留物、天然氧化硅或在将基片与溶解在多元醇中的氟化铵盐的基本上无水的组合物接触的加工过程中产生的受损氧化硅。该专利仅公开了二元醇作为多元醇的例子。
诸如以上描述的那些组合物表现出多种缺陷。含有DMSO和氟化物(例如氟化铵，HF等)的溶剂混合物使用户的健康冒有危险，这是由于DMSO具有将溶解的物质通过皮肤传递的能力。含有二元醇和氟化物的这些溶剂组合物具有高的表面张力(＞40mN/m)和高粘性(＞40cps)，引起基片润湿、喷溅或整体分布的困难。此外，含有氟化物的许多已知组合物在室温和高温下不能有效地除去抗光蚀剂，表现出不可接受的高氧化和金属蚀刻速度。这些组合物不能以接触或连接量使用，这是由于它们有高氧化物蚀刻速度并损失了关键的对模板的控制。本发明的目的是提供对人类和环境表现出少的毒性的组合物；提供了更大和更有效的灵活应用；使敏感金属例如铝、铜、钛等的腐蚀减至最少；并能在较低温度下除去抗光蚀剂和残留物。
                    发明概述
本发明组合物是pH为约3-6的水基缓冲液，其含有有机极性溶剂、氟化物、酸性缓冲溶液和水。在本发明组合物中不存在二元醇，DMSO不是优选的溶剂，因为在其与本发明含氟化物的组合物结合使用下，伴随着对健康的危害。本发明组合物任选地包括腐蚀抑制剂。本发明组合物用于去除在加工基片过程中形成的抗光蚀剂和/或灰烬或蚀刻残留物，所述基片用于生产半导体和微电子器件。使用本发明组合物的去除方法是通过将在表面上具有抗光蚀剂和/或蚀刻或灰烬残留物的基片与本发明组合物接触进行的。该方法的实际条件取决于基片的类型和被除去的物质等。除去抗光蚀剂和/或蚀刻或灰烬残留物的一般方法由以下步骤组成：在至少室温的温度下，将基片与本发明的组合物接触；将基片与组合物间的接触保持预定的时间；用水冲洗；和用惰性气体干燥。
                  发明详述
本发明涉及酸性的水基缓冲组合物和从半导体或微电子器件的基片表面除去抗光蚀剂和/或蚀刻或灰烬残留物的方法。该组合物基本上由酸性缓冲溶液、可以任何比例混溶在水中的极性溶剂、氟化物和水组成。该组合物被调至pH为约3-6；并任选地包括腐蚀抑制剂和本领域技术人员公知的一般用于除去抗光蚀剂和/或蚀刻或灰烬残留物的组合物中的其他添加剂。在25℃下测定，能提高表面张力至40mN/m或更高和增加组合物的粘度至40cps或更高的二元醇和其它溶剂不包括在本发明组合物中。二甲基亚砜由于附带的健康问题，不是优选的溶剂。
优选，本发明组合物基本组成为：使组合物的pH达到3-6所需量的酸性缓冲溶液；30％-90％重量的可以任何比例混溶于水中的有机极性溶剂；0.1％-20％重量的氟化铵；0.5％-40％重量的水；和可高至15％重量的腐蚀抑制剂。pH为约3-9会使最敏感的金属钝化，具有最小的腐蚀。然而除去大量无机蚀刻残留物和氧化物涂膜需要略酸性的pH。本发明组合物的pH被调节至约3-6，能最有效地清洗蚀刻残留物和钝化金属。本发明组合物的pH用酸性缓冲溶液调节至所需的约3-6范围。优选pH范围是约3-6。优选的缓冲液含有羧酸或多价酸的铵盐。这种铵盐的实例是乙酸铵或磷酸铵。特别优选的是乙酸铵和乙酸的水溶液。制备缓冲溶液的方法是现有技术已知的。酸性缓冲溶液当加入本发明组合物中时，提供了具有被调节的pH的缓冲组合物，其使敏感金属例如铝、铜、钛等的腐蚀减至最小。加入所需量的酸性缓冲溶液得到所需的pH。加入酸性缓冲溶液抑制了pH变动，这是由于被水稀释或掺杂了碱或酸的结果。
用于本发明的有机极性溶剂是可以任何比例混溶到水中的那些溶剂。二甲基亚砜对于本发明目的而言，由于引起的附带的健康问题，不是优选的溶剂。可接受的有机极性溶剂的例子包括二甲基乙酰胺(DMAC)、-乙醇胺、n-甲基乙醇胺、甲酰胺、n-甲基甲酰胺、γ-丁内酯、N-甲基吡咯烷酮等。优选使用DMAC。加入DMAC能导致组合物的表面张力＜30mN/m和粘度＜10厘泊。这提供了较好的基片润湿、更灵活的冲洗性，并有助于喷涂应用和在室温下的整体分布。另外，特别是在水存在下使用DMAC使得能够在室温下除去抗光蚀剂(包括酚醛清漆树脂抗光蚀剂)。
氟化物是本发明组合物的必要组份。含有氟化物的组份包括通式为R1R2R3R4NF的那些，其中R1,R2,R3和R4独立地为氢、醇基、烷氧基、烷基或其混合物。这种组份的实例是氟化铵、四甲基氟化铵、四乙基氟化铵。氟硼酸也可用作氟化物组份。优选氟化物的含量为0.1％-20％重量。氟化铵是优选的。氟化铵可以40％水溶液商购。
水作为本发明的组份存在。其同时可作为本发明其他组份的成份存在，例如氟化铵水溶液或酸性缓冲水溶液，或其可单独加入。优选，水的含量为0.5％-40％重量。水的存在还改善了本发明组合物中的氟化铵的溶解性并有助于除去抗光蚀剂和清洗无机蚀刻残留物。
可向本发明组合物中加入高达15％重量的腐蚀抑制剂。优选，抑制剂的浓度为约0.5％-8％重量。现有技术已知的用于类似应用的任何腐蚀抑制剂都可使用，例如在US5417877中公开的那些，该文献在本文引用作参考。然而，已发现在pH为约3-6的体系中，pKa大于6的抑制剂组份不如pKa低于约6的抑制剂组份的功效好。因此，优选的抑制剂组份是pKa低于约6的那些。优选的抑制剂组份的实例包括氨基苯甲酸、没食子酸、苯甲酸、异邻苯二甲酸、马来酸、富马酸、D,L-苹果酸、丙二酸、邻苯二甲酸、马来酸酐、邻苯二甲酸酐等。可使用的，但非优选的腐蚀抑制剂的实例包括儿茶酚、焦酚和没食子酸酯。
本发明组合物由于多种以下所述的原因而特别有用和有利。该组合物是水溶性的、对基片无腐蚀、非可燃性和低毒性。该组合物在低至20℃时能有效地去除抗光蚀剂和蚀刻残留物。该组合物特别适用于蚀刻的模板，除去蚀刻残留物和抗光蚀剂，同时保持严格的尺寸。由于它们具有低表面张力和粘度，本发明组合物容易从基片上冲洗掉并给基片提供了良好的润湿。
本发明方法的实施是通过将带有作为膜或残留物存在的有机或金属有机聚合物、无机盐、氧化物、氢氧化物或它们的复合物或组合物的基片与所述的组合物接触。实际的条件，例如温度、时间等取决于被去除的物质的性质和厚度。一般，当需要除去抗光蚀剂时，将基片接触或浸入含有优选在20℃-80℃，更优选20℃-60℃，最优选20℃-40℃的组合物的容器中，接触1-15分钟；用水冲洗并干燥。干燥一般在惰性气氛下进行。
用本发明组合物除去的物质包括现有技术已知的抗光蚀剂，例如酚醛清漆树脂和基于丙烯酸的抗蚀剂；和现有技术已知的加工残留物，例如侧壁的聚合物、遮蔽物、栅栏蚀刻残留物、灰烬残留物等。
在描述了本发明后，提供以下实施例进一步说明本发明，但不意味着限制本发明。
在以下实施例中，pH的测定是在室温下使用5％水溶液进行，表面张力和粘度的测定是在25℃下进行。
实施例1
将以下组份混合制备根据本发明的组合物：
组份                          重量％
乙酸(冰醋酸)                   12.0
乙酸铵                         15.2
DMAC                           57.5
氟化铵(40％水溶液)              2.5
水(去离子)                     12.4该组合物的pH为4.75。组合物的表面张力为28mN/m，粘度为10cps。
实施例2(比较)
将以下组份混合制备根据US5698503中的实施例2的组合物。
组份                          重量％
乙酸(冰醋酸)                   4.0
乙酸铵                         5.2
丙二醇                        73.0
DMSO                          12.3
氟化铵(40％水溶液)             5.0
儿茶酚                         0.5该组合物的pH为4.8。表面张力为45mN/M，粘度为40cps。以上组合物在20℃或40℃下不能除去抗光蚀剂。在20℃、40℃和60℃下测定Al/Cu合金、钛、钨、TiN合金和热氧化物在含有上述组合物的水浴中的蚀刻速度。使用实施例3的浸渍水浴法。使用Veeco FPP-5000四点探针体系对热氧化物上覆盖的金属膜测定金属蚀刻速度。使用nanospec AFT光学厚度测量仪来测定热氧化物蚀刻速度。蚀刻速度是用埃/分钟表示。结果给在表Ⅰ中。
                    表Ⅰ
              (蚀刻速度/分钟)温度(℃)  Al/Cu合金    钛    钨     TiN合金  热氧化物
20       9         0     0         0        9
40       2         4     0         0       46
60       3        14     0         4      层离
实施例3
使用实施例1的制剂在室温(20℃)和40℃下从基片上除去灰烬和蚀刻残留物，该基片有0.28微米条纹和0.14微米间隔。该方法包括将基片样品浸入含有实施例Ⅰ组合物的水浴中；从水浴中取出基片样品；用去离子水冲洗；并在氮气吹扫下干燥。在室温下，浸渍时间是20分钟。在40℃下，浸渍时间是10分钟。在这两种温度下除去灰烬和蚀刻残留物没有减少金属条纹的宽度(Al/Si/Cu合金)。该制剂在20℃的氧化物蚀刻速度为约0.3埃/分钟，在40℃时为约2.0埃/分钟。
实施例4
使用实施例1的制剂从蚀刻的通路模板上除去酚醛清漆树脂抗光蚀剂和蚀刻残留物。将蚀刻的通路板浸入在含有实施例1组合物的在20℃平衡的水浴中。浸渍时间是15分钟。然后用去离子水洗涤该蚀刻的通路模板并在氮气下干燥。除去抗光蚀剂和蚀刻残留物，没有测到通路尺寸改变。实施例5
在20℃、40℃和60℃下测定Al/Cu合金、钛、钨、TiN合金和热氧化物在含有实施例1组合物的水浴中的蚀刻速度。使用实施例3的浸渍水浴法。使用Veeco FPP-5000四点探针体系对热氧化物上覆盖的金属膜测定金属蚀刻速度。使用nanospec AFT光学厚度测量仪来测定热氧化物蚀刻速度。蚀刻速度是用埃/分钟表示。结果给在表Ⅱ中。
                      表Ⅱ
                 (蚀刻速度/分钟)温度(℃)  Al/Cu合金    钛    钨     TiN合金  热氧化物
20        2       ＜1    ＜1        0       0.3
40        3         6    ＜1        0       2
60        3        15    ＜1        0       17.5

Claims (17)

1．一种低表面张力、低粘度的水基组合物，其基本上由以下的物质组成：
a．酸性的缓冲溶液，
b．可以任何比例混溶于水中的极性有机溶剂，
c．氟化物，和
d．水，
其中该水基组合物的pH为约3-6，并且不含二元醇。
2．权利要求1的组合物，其基本组成还有腐蚀抑制剂。
3．权利要求1的组合物，其中酸性缓冲溶液含有羧酸或多价酸的铵盐。
4．权利要求1的组合物，其中极性溶剂是-乙醇胺、n-甲基乙醇胺、甲酰胺、n-甲基甲酰胺、二甲基乙酰胺、γ-丁内酯、N-甲基吡咯烷酮或它们的混合物。
5．权利要求1的组合物，其中氟化物具有通式R1R2R3R4NF，其中R1,R2,R3和R4独立地为氢、醇基、烷氧基、烷基或其混合物。
6．权利要求2的组合物，其中腐蚀抑制剂的pKa低于约6。
7．权利要求2的组合物，其中腐蚀抑制剂是氨基苯甲酸、没食子酸、苯甲酸、丙二酸、马来酸、富马酸、D,L-苹果酸、异邻苯二甲酸、邻苯二甲酸、马来酸酐、邻苯二甲酸酐或它们的混合物。
8．权利要求3的组合物，其中酸性缓冲剂是乙酸铵和乙酸的溶液。
9．权利要求1的组合物，其中氟化物是氟硼酸。
10．权利要求5的组合物，其中氟化物是氟化铵、四甲基氟化铵或四乙基氟化铵。
11．权利要求1的组合物，其在25℃下表面张力低于或等于30mN/m，粘度低于或等于15厘泊。
12．一种低表面张力、低粘度的组合物，其基本上由以下物质组成：
a．含有乙酸和乙酸铵的酸性缓冲溶液，
b．30％-90％重量的可以任何比例混溶于水中的极性有机溶剂，
c．0.1％-20％重量的氟化铵，和
d．0.5％-40％重量的水，和
f．可高至15％重量的腐蚀抑制剂，
其中该组合物的pH为3-6，并且不含二元醇。
13．一种低表面张力、低粘度的水基组合物，其基本上由以下物质组成：
a．乙酸铵；
b．二甲基乙酰胺，
c．乙酸，
d．40％氟化铵水溶液，和
e．去离子水，
其中该组合物的pH为约3-6，并且不含二元醇。
14．一种从基片上去除抗光蚀剂或残留物的方法，包括：在20℃-80℃下将权利要求1的组合物施用到基片上，经足够长的时间，从基片上去除该涂层。
15．权利要求14的方法，其中温度为20℃-60℃。
16．权利要求14的方法，其中温度为20℃-约40℃。
17．权利要求14的方法，其中温度是20℃。
CNB008000808A 1999-01-27 2000-01-04 用于去除抗光蚀剂和蚀刻残留物的含有氟化物的酸性组合物 Expired - Lifetime CN1176199C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/238,851 US6828289B2 (en) 1999-01-27 1999-01-27 Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
US09/238,851 1999-01-27

Publications (2)

Publication Number Publication Date
CN1302327A true CN1302327A (zh) 2001-07-04
CN1176199C CN1176199C (zh) 2004-11-17

Family

ID=22899590

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB008000808A Expired - Lifetime CN1176199C (zh) 1999-01-27 2000-01-04 用于去除抗光蚀剂和蚀刻残留物的含有氟化物的酸性组合物

Country Status (12)

Country Link
US (2) US6828289B2 (zh)
EP (1) EP1066365B1 (zh)
JP (1) JP3842557B2 (zh)
KR (1) KR100641780B1 (zh)
CN (1) CN1176199C (zh)
AT (1) ATE438704T1 (zh)
AU (1) AU2598900A (zh)
DE (1) DE60042673D1 (zh)
IL (1) IL138706A (zh)
MY (1) MY127401A (zh)
TW (1) TW500984B (zh)
WO (1) WO2000044867A1 (zh)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007056919A1 (fr) * 2005-11-15 2007-05-24 Anji Microelectronics (Shanghai) Co., Ltd Composition detergente aqueuse
CN1322105C (zh) * 2004-04-27 2007-06-20 恩益禧电子股份有限公司 半导体器件的清洗液和制造方法
CN101024882B (zh) * 2006-01-17 2010-05-26 三星电子株式会社 硅表面清洁溶液以及用其制造半导体器件的方法
CN102026931A (zh) * 2009-02-26 2011-04-20 Ppt研究公司 腐蚀抑制组合物
CN102338994A (zh) * 2010-07-23 2012-02-01 安集微电子（上海）有限公司 一种光刻胶的清洗液
CN101548242B (zh) * 2006-12-15 2013-07-10 安集微电子（上海）有限公司 清洗厚膜光刻胶的清洗剂
CN107678253A (zh) * 2017-09-26 2018-02-09 合肥新汇成微电子有限公司 一种用于半导体晶圆等离子蚀刻残留物的清洗液
CN114716972A (zh) * 2020-12-22 2022-07-08 中国石油化工股份有限公司 一种油气抑制剂组合物和抑制液态有机烃挥发的方法

Families Citing this family (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7534752B2 (en) * 1996-07-03 2009-05-19 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US6703319B1 (en) * 1999-06-17 2004-03-09 Micron Technology, Inc. Compositions and methods for removing etch residue
US6762132B1 (en) * 2000-08-31 2004-07-13 Micron Technology, Inc. Compositions for dissolution of low-K dielectric films, and methods of use
US6656894B2 (en) * 2000-12-07 2003-12-02 Ashland Inc. Method for cleaning etcher parts
US7179774B2 (en) * 2002-06-19 2007-02-20 Henkel Kommanditgesellschaft Auf Aktien Flushing solutions for coatings removal
JP2002237481A (ja) * 2001-02-09 2002-08-23 Kobe Steel Ltd 微細構造体の洗浄方法
US20030022800A1 (en) * 2001-06-14 2003-01-30 Peters Darryl W. Aqueous buffered fluoride-containing etch residue removers and cleaners
US6773873B2 (en) * 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
US6677286B1 (en) * 2002-07-10 2004-01-13 Air Products And Chemicals, Inc. Compositions for removing etching residue and use thereof
WO2004016827A1 (fr) * 2002-08-19 2004-02-26 Merk-Kanto Advanced Chemical Ltd. Solution decapante
US7018937B2 (en) * 2002-08-29 2006-03-28 Micron Technology, Inc. Compositions for removal of processing byproducts and method for using same
WO2004100245A1 (en) * 2003-05-02 2004-11-18 Ekc Technology, Inc. Removal of post-etch residues in semiconductor processing
KR100672933B1 (ko) 2003-06-04 2007-01-23 삼성전자주식회사 세정 용액 및 이를 이용한 반도체 소자의 세정 방법
US20040256354A1 (en) * 2003-06-18 2004-12-23 Raluca Dinu Method of removing etch veils from microstructures
JP4190364B2 (ja) * 2003-08-26 2008-12-03 東京応化工業株式会社 ホトリソグラフィー用リンス液および基板の処理方法
TWI362415B (en) * 2003-10-27 2012-04-21 Wako Pure Chem Ind Ltd Novel detergent and method for cleaning
EP1680806A4 (en) * 2003-10-28 2008-07-30 Sachem Inc CLEANING SOLUTIONS AND MEDICAMENTS AND METHOD FOR THEIR USE
US20060003910A1 (en) * 2004-06-15 2006-01-05 Hsu Jiun Y Composition and method comprising same for removing residue from a substrate
US8030263B2 (en) 2004-07-01 2011-10-04 Air Products And Chemicals, Inc. Composition for stripping and cleaning and use thereof
US9217929B2 (en) * 2004-07-22 2015-12-22 Air Products And Chemicals, Inc. Composition for removing photoresist and/or etching residue from a substrate and use thereof
US8119537B2 (en) * 2004-09-02 2012-02-21 Micron Technology, Inc. Selective etching of oxides to metal nitrides and metal oxides
US20060116313A1 (en) * 2004-11-30 2006-06-01 Denise Geitz Compositions comprising tannic acid as corrosion inhibitor
TWI259523B (en) * 2004-12-13 2006-08-01 United Microelectronics Corp Method for forming photoresist pattern and method for trimming photoresist pattern
US7682458B2 (en) * 2005-02-03 2010-03-23 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
US7888302B2 (en) * 2005-02-03 2011-02-15 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
US7867779B2 (en) 2005-02-03 2011-01-11 Air Products And Chemicals, Inc. System and method comprising same for measurement and/or analysis of particles in gas stream
US20060183055A1 (en) * 2005-02-15 2006-08-17 O'neill Mark L Method for defining a feature on a substrate
US20060194142A1 (en) * 2005-02-25 2006-08-31 Benjamin Szu-Min Lin Immersion lithography without using a topcoat
EP1701218A3 (en) * 2005-03-11 2008-10-15 Rohm and Haas Electronic Materials LLC Polymer remover
JP4678673B2 (ja) * 2005-05-12 2011-04-27 東京応化工業株式会社 ホトレジスト用剥離液
TWI339780B (en) * 2005-07-28 2011-04-01 Rohm & Haas Elect Mat Stripper
US8197865B2 (en) * 2005-08-09 2012-06-12 Access Business Group International Llc Methods and compositions for modulating hair growth or regrowth
US7858572B2 (en) * 2005-12-26 2010-12-28 Liquid Technology Co., Ltd. Composition for removing polymer residue of photosensitive etching-resistant layer
US7534753B2 (en) 2006-01-12 2009-05-19 Air Products And Chemicals, Inc. pH buffered aqueous cleaning composition and method for removing photoresist residue
JP4816250B2 (ja) * 2006-05-25 2011-11-16 三菱瓦斯化学株式会社 エッチング液組成物及びエッチング方法
US7943562B2 (en) 2006-06-19 2011-05-17 Samsung Electronics Co., Ltd. Semiconductor substrate cleaning methods, and methods of manufacture using same
CN101126053A (zh) * 2006-08-17 2008-02-20 安集微电子（上海）有限公司 用于半导体工业中等离子刻蚀残留物的清洗液组合物
KR100823714B1 (ko) * 2006-08-24 2008-04-21 삼성전자주식회사 폴리머 제거용 세정액 및 이를 이용한 폴리머 제거방법
JP4499751B2 (ja) * 2006-11-21 2010-07-07 エア プロダクツ アンド ケミカルズ インコーポレイテッド フォトレジスト、エッチ残留物及びｂａｒｃを除去するための配合物及び同配合物を含む方法
US7879783B2 (en) * 2007-01-11 2011-02-01 Air Products And Chemicals, Inc. Cleaning composition for semiconductor substrates
FR2912151B1 (fr) * 2007-02-05 2009-05-08 Arkema France Formulation de dimethylsulfoxyde en melange avec un additif permettant d'abaisser le point de cristallisation de ce dernier, et applications de ce melange
US20080234162A1 (en) * 2007-03-21 2008-09-25 General Chemical Performance Products Llc Semiconductor etch residue remover and cleansing compositions
CN101286016A (zh) * 2007-04-13 2008-10-15 安集微电子（上海）有限公司 低蚀刻性光刻胶清洗剂
CN101286017A (zh) * 2007-04-13 2008-10-15 安集微电子（上海）有限公司 厚膜光刻胶清洗剂
CN101290482A (zh) * 2007-04-19 2008-10-22 安集微电子（上海）有限公司 一种清洗等离子刻蚀残留物的清洗液
CN101364056A (zh) * 2007-08-10 2009-02-11 安集微电子（上海）有限公司 一种光刻胶清洗剂
US20090096106A1 (en) 2007-10-12 2009-04-16 Air Products And Chemicals, Inc. Antireflective coatings
US8987039B2 (en) 2007-10-12 2015-03-24 Air Products And Chemicals, Inc. Antireflective coatings for photovoltaic applications
US7531047B1 (en) * 2007-12-12 2009-05-12 Lexmark International, Inc. Method of removing residue from a substrate after a DRIE process
US8168577B2 (en) * 2008-02-29 2012-05-01 Avantor Performance Materials, Inc. Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion
US20090229629A1 (en) * 2008-03-14 2009-09-17 Air Products And Chemicals, Inc. Stripper For Copper/Low k BEOL Clean
JP5206177B2 (ja) * 2008-07-09 2013-06-12 三菱瓦斯化学株式会社 レジスト剥離液組成物およびそれを用いた半導体素子の製造方法
KR20100052638A (ko) * 2008-11-11 2010-05-20 주식회사 동부하이텍 이미지 센서의 제조 방법
US20100151206A1 (en) 2008-12-11 2010-06-17 Air Products And Chemicals, Inc. Method for Removal of Carbon From An Organosilicate Material
CN101928650B (zh) * 2009-06-23 2016-02-17 安集微电子（上海）有限公司 一种含氟组合物及其应用
JP2011105814A (ja) * 2009-11-13 2011-06-02 Tosoh Corp 電子デバイスの洗浄方法
US8101561B2 (en) * 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
CN102073226B (zh) * 2009-11-20 2014-03-26 安集微电子（上海）有限公司 一种厚膜光刻胶清洗液及其清洗方法
CN102346383B (zh) * 2010-08-06 2016-03-16 安集微电子（上海）有限公司 一种光刻胶的清洗液
CN102399648B (zh) * 2010-09-10 2015-04-15 安集微电子（上海）有限公司 一种含氟清洗液
TW201224138A (en) * 2010-12-10 2012-06-16 Anji Microelectronics Co Ltd Thick-film photoresist stripper solution
CN102109777B (zh) * 2010-12-15 2012-08-22 绵阳艾萨斯电子材料有限公司 一种等离子显示用障壁浆料的再生液
CN102566331B (zh) * 2010-12-21 2016-08-03 安集微电子（上海）有限公司 一种厚膜光刻胶清洗液
CN102540774A (zh) * 2010-12-21 2012-07-04 安集微电子（上海）有限公司 一种厚膜光刻胶清洗剂
WO2012083587A1 (zh) * 2010-12-21 2012-06-28 安集微电子（上海）有限公司 一种厚膜光刻胶清洗液
US8889609B2 (en) * 2011-03-16 2014-11-18 Air Products And Chemicals, Inc. Cleaning formulations and method of using the cleaning formulations
WO2012148967A2 (en) 2011-04-25 2012-11-01 Air Products And Chemicals, Inc. Cleaning lead-frames to improve wirebonding process
TW201311884A (zh) * 2011-09-13 2013-03-16 Anji Microelectronics Co Ltd 光阻（光刻）膠的清洗液
TW201311883A (zh) * 2011-09-13 2013-03-16 Anji Microelectronics Co Ltd 光阻（光刻）膠的清洗液
US8987181B2 (en) * 2011-11-08 2015-03-24 Dynaloy, Llc Photoresist and post etch residue cleaning solution
KR20130072664A (ko) 2011-12-22 2013-07-02 에스케이하이닉스 주식회사 반도체 메모리 소자의 제조방법
CN103809393A (zh) * 2012-11-12 2014-05-21 安集微电子科技(上海)有限公司 一种去除光阻残留物的清洗液
CN103809394B (zh) * 2012-11-12 2019-12-31 安集微电子科技（上海）股份有限公司 一种去除光阻蚀刻残留物的清洗液
US10189712B2 (en) 2013-03-15 2019-01-29 International Business Machines Corporation Oxidation of porous, carbon-containing materials using fuel and oxidizing agent
JP6707451B2 (ja) * 2013-12-11 2020-06-10 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 表面の残留物を除去するための洗浄配合物
US9365809B1 (en) 2014-03-12 2016-06-14 710-Cleaner, Llc Cleaning solution for smoking paraphernalia and method therefor
US10073351B2 (en) * 2014-12-23 2018-09-11 Versum Materials Us, Llc Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation
KR102464723B1 (ko) * 2015-04-13 2022-11-08 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 웨이퍼를 재생하기 위한 탄소함유 실리콘 산화물을 포함하는 재료의 세정액 및 세정방법
TWI818893B (zh) 2015-07-14 2023-10-21 美商富士軟片電子材料美國股份有限公司 清潔組成物及其使用方法
EP3487975A1 (en) 2016-07-19 2019-05-29 Ecolab USA Inc. Methods and cleaning solutions for removing chewing gum and other sticky food substances
WO2020080060A1 (ja) * 2018-10-16 2020-04-23 昭和電工株式会社 組成物、接着性ポリマーの洗浄方法、デバイスウェハの製造方法、及び支持ウェハの再生方法
WO2023049688A1 (en) * 2021-09-23 2023-03-30 Versum Materials Us, Llc Post-dry etching photoresist and metal containing residue removal formulation
CN115368898A (zh) * 2022-07-12 2022-11-22 张家港安储科技有限公司 一种含氟离子的氧化硅蚀刻液及其应用

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6492311B2 (en) * 1990-11-05 2002-12-10 Ekc Technology, Inc. Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process
US5320709A (en) 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
NZ277438A (en) * 1993-12-10 1998-11-25 Armor All Prod Corp Vehicle wheel cleaner, acid fluoride salts in aqueous composition
JP2743823B2 (ja) 1994-03-25 1998-04-22 日本電気株式会社 半導体基板のウエット処理方法
US5571447A (en) 1995-03-20 1996-11-05 Ashland Inc. Stripping and cleaning composition
JP3236220B2 (ja) * 1995-11-13 2001-12-10 東京応化工業株式会社 レジスト用剥離液組成物
ATE312895T1 (de) * 1996-07-25 2005-12-15 Dupont Air Prod Nanomaterials Zusammensetzung und verfahren zum chemisch- mechanischen polieren
JPH1055993A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
US6245155B1 (en) * 1996-09-06 2001-06-12 Arch Specialty Chemicals, Inc. Method for removing photoresist and plasma etch residues
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US5709756A (en) * 1996-11-05 1998-01-20 Ashland Inc. Basic stripping and cleaning composition
US5698503A (en) * 1996-11-08 1997-12-16 Ashland Inc. Stripping and cleaning composition
US5968848A (en) * 1996-12-27 1999-10-19 Tokyo Ohka Kogyo Co., Ltd. Process for treating a lithographic substrate and a rinse solution for the treatment
JP2001508239A (ja) * 1997-01-09 2001-06-19 アドバンスド ケミカル システムズ インターナショナル，インコーポレイテッド 水性フッ化アンモニウムおよびアミンを用いた、半導体ウエハ洗浄組成物および方法
US5798323A (en) * 1997-05-05 1998-08-25 Olin Microelectronic Chemicals, Inc. Non-corrosive stripping and cleaning composition
JPH1167632A (ja) * 1997-08-18 1999-03-09 Mitsubishi Gas Chem Co Inc 半導体装置用洗浄剤
US6849200B2 (en) 2002-07-23 2005-02-01 Advanced Technology Materials, Inc. Composition and process for wet stripping removal of sacrificial anti-reflective material

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1322105C (zh) * 2004-04-27 2007-06-20 恩益禧电子股份有限公司 半导体器件的清洗液和制造方法
WO2007056919A1 (fr) * 2005-11-15 2007-05-24 Anji Microelectronics (Shanghai) Co., Ltd Composition detergente aqueuse
CN1966636B (zh) * 2005-11-15 2011-08-03 安集微电子（上海）有限公司 清洗液组合物
CN101024882B (zh) * 2006-01-17 2010-05-26 三星电子株式会社 硅表面清洁溶液以及用其制造半导体器件的方法
CN101548242B (zh) * 2006-12-15 2013-07-10 安集微电子（上海）有限公司 清洗厚膜光刻胶的清洗剂
CN102026931A (zh) * 2009-02-26 2011-04-20 Ppt研究公司 腐蚀抑制组合物
CN102338994A (zh) * 2010-07-23 2012-02-01 安集微电子（上海）有限公司 一种光刻胶的清洗液
CN102338994B (zh) * 2010-07-23 2014-12-31 安集微电子（上海）有限公司 一种光刻胶的清洗液
CN107678253A (zh) * 2017-09-26 2018-02-09 合肥新汇成微电子有限公司 一种用于半导体晶圆等离子蚀刻残留物的清洗液
CN114716972A (zh) * 2020-12-22 2022-07-08 中国石油化工股份有限公司 一种油气抑制剂组合物和抑制液态有机烃挥发的方法

Also Published As

Publication number Publication date
DE60042673D1 (de) 2009-09-17
US7361631B2 (en) 2008-04-22
IL138706A0 (en) 2001-10-31
EP1066365B1 (en) 2009-08-05
IL138706A (en) 2004-02-08
CN1176199C (zh) 2004-11-17
JP2002535732A (ja) 2002-10-22
KR100641780B1 (ko) 2006-11-06
EP1066365A4 (en) 2002-10-09
AU2598900A (en) 2000-08-18
EP1066365A1 (en) 2001-01-10
US20030148910A1 (en) 2003-08-07
JP3842557B2 (ja) 2006-11-08
US6828289B2 (en) 2004-12-07
KR20010034677A (ko) 2001-04-25
TW500984B (en) 2002-09-01
WO2000044867A1 (en) 2000-08-03
MY127401A (en) 2006-11-30
ATE438704T1 (de) 2009-08-15
US20050119143A1 (en) 2005-06-02

Similar Documents

Publication Publication Date Title
CN1176199C (zh) 用于去除抗光蚀剂和蚀刻残留物的含有氟化物的酸性组合物
KR100595024B1 (ko) 박리제 조성물
EP1470207B1 (en) Aqueous stripping and cleaning composition
CN1266262C (zh) 蚀刻设备组件的清洗方法
TWI416282B (zh) 用以移除殘餘光阻及聚合物的組合物及使用該組合物的殘餘物移除製程
JP4741315B2 (ja) ポリマー除去組成物
JP4766115B2 (ja) 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
EP1610185A2 (en) Composition and method using same for removing residue from a substrate
CN1503838A (zh) 清洁组合物
CN102138202B (zh) 残渣剥离液组合物及使用其的半导体元件的洗涤方法
KR20100080321A (ko) 반도체 소자용 세정액 조성물 및 이를 이용한 반도체 소자의 세정 방법
JP4667147B2 (ja) 基板洗浄液
CN102498197A (zh) 清洗组成物
JP2004029276A (ja) 銅配線基板向け含フッ素レジスト剥離液
JP4296320B2 (ja) レジスト剥離剤組成物及びその使用方法
KR20080111268A (ko) 세정액 조성물 및 이를 이용한 세정방법
JP5278434B2 (ja) 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
JP2003035963A (ja) フォトレジスト残渣除去液組成物
JP2007311729A (ja) 基板洗浄液
JP4223621B2 (ja) レジスト剥離剤組成物の使用方法
KR20030082767A (ko) 수용액에서의 전해질의 전기전도도가 높은 물질을 이용한레지스트 박리액 조성물
WO2023049688A1 (en) Post-dry etching photoresist and metal containing residue removal formulation
KR20100066837A (ko) 평판표시장치용 세정제 조성물 이를 이용한 평판표시장치의세정방법
KR20060122188A (ko) 반도체 공정용 잔사제거액 조성물
KR20150117148A (ko) 구리 평탄화 후 표면의 유무기 오염물 세정액 조성물

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: AIR PRODUCTS AND CHEMICALS CO., LTD.

Free format text: FORMER OWNER: ASHLAND INC.

Effective date: 20040611

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20040611

Address after: Pennsylvania

Applicant after: Ashland Inc

Address before: ohio

Applicant before: Ashland Inc.

C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20041117

CX01 Expiry of patent term