CN1266262C - 蚀刻设备组件的清洗方法 - Google Patents
蚀刻设备组件的清洗方法 Download PDFInfo
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- 238000004140 cleaning Methods 0.000 title description 3
- 239000000203 mixture Substances 0.000 claims abstract description 35
- 230000002378 acidificating effect Effects 0.000 claims abstract description 10
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000006210 lotion Substances 0.000 claims description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 23
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 21
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- 238000005260 corrosion Methods 0.000 claims description 17
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- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 7
- 239000007853 buffer solution Substances 0.000 claims description 7
- 239000003495 polar organic solvent Substances 0.000 claims description 7
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 claims description 6
- 239000005695 Ammonium acetate Substances 0.000 claims description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- 229940043376 ammonium acetate Drugs 0.000 claims description 6
- 235000019257 ammonium acetate Nutrition 0.000 claims description 6
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 6
- -1 4Be hydrogen, alcohol radical Chemical class 0.000 claims description 5
- BCNBMSZKALBQEF-UHFFFAOYSA-N 1,3-dimethylpyrrolidin-2-one Chemical compound CC1CCN(C)C1=O BCNBMSZKALBQEF-UHFFFAOYSA-N 0.000 claims description 4
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 4
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 claims description 4
- 150000003863 ammonium salts Chemical class 0.000 claims description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 229940074391 gallic acid Drugs 0.000 claims description 3
- 235000004515 gallic acid Nutrition 0.000 claims description 3
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 claims description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical group NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 2
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical group OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 claims description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 2
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 2
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 2
- 125000003545 alkoxy group Chemical group 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000872 buffer Substances 0.000 claims description 2
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- HCPOCMMGKBZWSJ-UHFFFAOYSA-N ethyl 3-hydrazinyl-3-oxopropanoate Chemical compound CCOC(=O)CC(=O)NN HCPOCMMGKBZWSJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000001530 fumaric acid Substances 0.000 claims description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 claims description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N malic acid Chemical compound OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Natural products C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 2
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 claims description 2
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 claims description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 2
- RWZYAGGXGHYGMB-UHFFFAOYSA-N anthranilic acid Chemical group NC1=CC=CC=C1C(O)=O RWZYAGGXGHYGMB-UHFFFAOYSA-N 0.000 claims 2
- 239000000243 solution Substances 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 1
- 150000002334 glycols Chemical class 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 229960000583 acetic acid Drugs 0.000 description 7
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- 238000005530 etching Methods 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 5
- MHABMANUFPZXEB-UHFFFAOYSA-N O-demethyl-aloesaponarin I Natural products O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=C(O)C(C(O)=O)=C2C MHABMANUFPZXEB-UHFFFAOYSA-N 0.000 description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 238000002242 deionisation method Methods 0.000 description 3
- 239000012362 glacial acetic acid Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 230000003245 working effect Effects 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 239000004254 Ammonium phosphate Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- 229920001795 coordination polymer Polymers 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
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- 239000004576 sand Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/835—Mixtures of non-ionic with cationic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/28—Organic compounds containing halogen
- C11D7/30—Halogenated hydrocarbons
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/20—Industrial or commercial equipment, e.g. reactors, tubes or engines
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/40—Specific cleaning or washing processes
- C11D2111/46—Specific cleaning or washing processes applying energy, e.g. irradiation
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
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- C11D7/3218—Alkanolamines or alkanolimines
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- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3263—Amides or imides
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
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Abstract
本发明涉及一种用于从蚀刻设备组件上去除蚀刻残留物的方法。所用组合物为含水酸性组合物，其中含有氟化物和极性有机溶剂。该组合物不含乙二醇和羟胺，且表面张力和粘度都较低。
Description
技术领域
本发明涉及蚀刻设备组件的清洗方法。具体地说，本发明涉及一种通过将蚀刻设备组件浸入水性洗液而去除蚀刻设备上形成的蚀刻残留物的方法。
背景技术
在半导体器件的制备中往往需要将各种材料从基底上去除。等离子蚀刻、活性离子蚀刻、离子抛光等方法正越来越多地被用于从基底上去除材料。在这些去除操作中会形成各种副产物。这些副产物是由等离子气体、基底和抗蚀材料相互反应的结果。这些副产物的形成还受到蚀刻设备的类型和处理条件的影响。这些蚀刻残留物除了重新沉积在基底上，还会在蚀刻设备的暴露表面上形成不希望的沉积。为了延长蚀刻设备的使用寿命，人们想出各种办法来去除蚀刻设备的暴露表面上的不希望的残留物。例如有一种方法包括使用小颗粒，如沙子或玻璃小球通过喷砂处理来去除蚀刻设备组件上的不希望的残留物。其他的方法需要将蚀刻设备组件浸泡在洗液中，美国专利No.5,334,332公开的方法就是一个例子。根据该专利文献，蚀刻设备组件被浸泡在一种含有羟胺、链烷醇胺、水和邻苯二酚的洗液中。
发明内容
本发明涉及一种去除蚀刻设备上的蚀刻残留物而又不损坏设备表面的方法。本发明方法所用组合物为水性，且不含羟胺。该水性组合物含有一种酸性缓冲溶液、一种可以任意比溶于水的极性有机溶剂和一种氟化物。所述组合物的pH值介于3到6之间。
具体实施方式
本发明涉及一种通过将蚀刻设备组件浸入水性洗液而去除蚀刻设备上形成的蚀刻残留物的方法，其中包括：
A.一种酸性缓冲溶液，
B.一种可以任意比溶于水的极性有机溶剂，和
C.一种氟化物。
所述组合物的pH值介于3到6之间，且不含羟胺。
根据本发明，蚀刻设备组件被浸入一含有水性清洁组合物的洗液中。典型地，洗液温度保持在20℃至40℃之间。尽管温度高于40℃的洗液也可以使用，但水分的蒸发会缩短洗液的使用寿命。蚀刻设备组件在洗液中泡够规定的时间之后，将其取出，通过喷洗或浸泡将其彻底冲洗干净。通常3到5分钟便可以将洗液残留物彻底冲掉。蚀刻设备组件在惰性气体流中或通过加热干燥。可以选择性地使用声波(强声波或超声波)来搅动洗液。
本方法所用组合物优选含有足够量的酸性缓冲溶液以便将组合物的pH值保持在大约3到6之间；含有30重量％到90重量％的一种可以任意比溶于水的极性有机溶剂；含有0.1重量％到20重量％的氟化铵；含有0.5重量％到40重量％的水；和不高于15重量％的抗腐蚀剂。所有的重量比都基于水性洗液的总重量算得。
介于约3到9之间的pH值环境将使得大多数易腐蚀金属对轻微腐蚀表现出惰性。然而，在某些情况下，为了去除高度无机化的蚀刻残留物，可能会使用略显酸性的pH环境。本发明方法通过使用一种酸性缓冲溶液将所用的洗液组合物的pH范围调整在理想的范围。优选的缓冲溶液含有一种羧酸或多元酸的铵盐。此类铵盐的一个例子是醋酸铵或磷酸铵。特别优选的是由醋酸铵和醋酸形成的酸性水溶液。缓冲溶液的配制方法为本领域所公知。在水性洗液中加入酸性缓冲溶液使得洗液组合物能够缓冲pH的波动，并且使其不易于对那些用于蚀刻设备组件的易腐蚀的金属，例如铝造成腐蚀。本发明所用极性有机溶剂可以任意比溶于水。二甲基亚砜由于对健康不利，不是本发明的优选极性有机溶剂。可用于本发明的溶剂包括例如二甲基乙酰胺(DMAC)、二甲基吡咯烷酮(DMPD)、单乙醇胺、N-甲基乙醇胺、甲酰胺、N-甲基甲酰胺、N-甲基吡咯烷酮(NMP)以及类似化合物。优选DMAC。DMAC的使用会形成一种组合物，其表面张力小于30mN/m，粘度约为10厘泊。这将更易润湿和冲洗。
氟化物是洗液组合物中的一个重要成分。含氟组合物包括那些具有通式R1R2R3R4NF的化合物，其中R1、R2、R3和R4独立地为氢、醇基、烷氧基、烷基或者它们的混合。这样的组合物的例子包括氟化铵、氟化四甲基铵和氟化四乙基铵。还可以使用氟硼酸。优选氟化铵，可以商购获得该化合物的40％水溶液。
水可以其他组分的一部分的形式出现，例如在氟化铵水溶液中，也可以单独加入。在无机蚀刻残留物的去除中，水的加入改善了氟化铵在洗液和酸中的溶解度。
乙二醇和其它溶剂的加入将使得组合物在25℃下的表面张力大于40mN/m，而粘度也会高于40厘泊，这些溶剂不包括在本发明的洗液中。
本发明的水性洗液优选具有小于或等于30mN/m的表面张力和小于或等于15厘泊的粘度。
可以在水性洗液中加入不高于15重量％的抗腐蚀剂。优选抗腐蚀剂的含量在0.5重量％到8重量％之间。本领域所熟知的抗腐蚀剂，如在此用作参考文献的美国专利No.5,417,877中所公开的抗腐蚀剂，均可使用。据发现，在pH值小于6的体系中，pKa大于6的抗腐蚀剂不如pKa小于6的抗腐蚀剂好用。因此，优选的抗腐蚀剂组合物是那些pKa小于6的抗腐蚀剂。优选的抗腐蚀剂包括(邻)氨基苯甲酸、没食子酸、苯甲酸、p-甲基苯磺酸、十二烷基苯磺酸、异酞酸、马来酸、富马酸、D，L-苹果酸、丙二酸，邻苯二甲酸、马来酸酐、邻苯二甲酸酐等。可用但非优选的抗腐蚀剂如邻苯二酚、焦酚、没食子酸的酯。
本发明用于去除蚀刻残留物的水性洗液对蚀刻设备组件无腐蚀，不易燃并且低毒。该水性洗液组合物在20℃下即可有效去除蚀刻残留物，并且由于其低的表面张力和粘度而易于从蚀刻设备组件上冲去。
本发明方法的实施是将带有以薄膜或残留物形式存在的有机或金属有机聚合物、无机盐、氧化物、氢氧化物或者这些成分的复合或混合物的蚀刻设备组件与所公开的水性洗液相接触。温度、时间等实际的条件取决于所要清除的蚀刻残余物的特点和厚度。一般而言，要除去蚀刻残余物，需要将设备组件浸入一个装有水性洗液的容器，洗液温度保持在约20℃到80℃，优选在约20℃到40℃，持续时间可以是7分钟，也可以超过二十四小时，决定于所要清除的蚀刻残余物的类型和沉积的量。
有了上面这些对本发明的描述，下面将通过实施例来进一步说明而不是限定本发明。在下面的实施例中，通过使用5％的水溶液在室温下确定pH值。表面张力和粘度的测量是在25℃下进行的。在室温下混合如下组分得到组合物。
实施例
实施例1
组分 重量％
DMAC 57.5
水(去离子) 12.4
氟化铵(40％水溶液) 2.5
醋酸(冰醋酸) 12.0
醋酸铵 15.6
组合物的pH值为4.75。组合物表面张力为28mN/m，粘度为10厘泊。
实施例2
组分 重量％
NMP 57.5
水(去离子) 12.4
氟化铵(40％水溶液) 2.5
醋酸(冰醋酸) 12.0
醋酸铵 15.6
组合物的pH值为4.75。组合物表面张力为42.2mN/m，粘度为12.0厘泊。
实施例3
组分 重量％
DMPD 57.5
水(去离子) 12.4
氟化铵(40％水溶液) 2.5
醋酸(冰醋酸) 12.0
醋酸铵 15.6
组合物的pH值为4.75。组合物表面张力为31.5mN/m，粘度为18.0厘泊。
Claims (10)
1.一种用于从蚀刻设备组件上去除蚀刻残留物的方法，该方法包括：将蚀刻设备组件放入水性洗液中，该水性洗液含有：
A.一种酸性缓冲溶液，
B.一种可以任意比溶于水的极性有机溶剂，和
C.一种氟化物，其选自氟硼酸和具有通式R1R2R3R4NF的氟化物，在所述通式中，R1、R2、R3和R4独立地为氢、醇基、烷氧基、烷基、或它们的混合物；
直至蚀刻残留物被清除，其中，所述洗液的pH值保持在3到6之间，且所述洗液不含羟胺，并不含乙二醇以及使洗液在25℃的表面张力大于40mN/m且粘度高于40厘泊的溶剂。
2.权利要求1所述方法，其中水性洗液还包含一抗腐蚀剂。
3.权利要求1所述方法，其中酸性缓冲溶液含有羧酸或多元酸的铵盐。
4.权利要求1所述方法，其中极性有机溶剂为单乙醇胺、N-甲基乙醇胺、甲酰胺、N-甲基甲酰胺、二甲基乙酰胺、二甲基吡咯烷酮、N-甲基吡咯烷酮或它们的混合物。
5.权利要求2所述方法，其中抗腐蚀剂的pKa小于6。
6.权利要求2所述方法，其中抗腐蚀剂为邻氨基苯甲酸、没食子酸、苯甲酸、p-甲基苯磺酸、十二烷基苯磺酸、马来酸、富马酸、D，L-苹果酸、异酞酸、丙二酸，邻苯二甲酸、马来酸酐、邻苯二甲酸酐，或它们的混合物。
7.权利要求3所述方法，其中酸性缓冲液为醋酸与醋酸铵的溶液。
8.权利要求1所述方法，其中氟化物为氟化铵、氟化四甲基铵或氟化四乙基铵。
9.权利要求1所述方法，其中水性洗液的表面张力小于或等于30mN/m，粘度小于或等于15厘泊。
10.权利要求1所述方法，其中水性洗液被搅动。
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| US09/732,414 US6656894B2 (en) | 2000-12-07 | 2000-12-07 | Method for cleaning etcher parts |
| US09/732,414 | 2000-12-07 |
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| US20030022800A1 (en) * | 2001-06-14 | 2003-01-30 | Peters Darryl W. | Aqueous buffered fluoride-containing etch residue removers and cleaners |
| US7521366B2 (en) * | 2001-12-12 | 2009-04-21 | Lg Display Co., Ltd. | Manufacturing method of electro line for liquid crystal display device |
| US6943142B2 (en) * | 2002-01-09 | 2005-09-13 | Air Products And Chemicals, Inc. | Aqueous stripping and cleaning composition |
| KR100455503B1 (ko) * | 2002-06-17 | 2004-11-06 | 동부전자 주식회사 | 반도체 소자의 콘택홀 세정 방법 |
| US6677286B1 (en) * | 2002-07-10 | 2004-01-13 | Air Products And Chemicals, Inc. | Compositions for removing etching residue and use thereof |
| JP4352880B2 (ja) * | 2003-12-02 | 2009-10-28 | セイコーエプソン株式会社 | 洗浄方法および洗浄装置 |
| US7148072B2 (en) * | 2004-05-28 | 2006-12-12 | Hitachi Global Storage Technologies Netherlands B.V. | Method and apparatus for oxidizing conductive redeposition in TMR sensors |
| US7442114B2 (en) * | 2004-12-23 | 2008-10-28 | Lam Research Corporation | Methods for silicon electrode assembly etch rate and etch uniformity recovery |
| US7247579B2 (en) | 2004-12-23 | 2007-07-24 | Lam Research Corporation | Cleaning methods for silicon electrode assembly surface contamination removal |
| US7507670B2 (en) * | 2004-12-23 | 2009-03-24 | Lam Research Corporation | Silicon electrode assembly surface decontamination by acidic solution |
| CA2608285A1 (en) * | 2005-05-13 | 2006-11-23 | Sachem, Inc. | Selective wet etching of oxides |
| TWI339780B (en) * | 2005-07-28 | 2011-04-01 | Rohm & Haas Elect Mat | Stripper |
| TW200722505A (en) * | 2005-09-30 | 2007-06-16 | Rohm & Haas Elect Mat | Stripper |
| CN1966636B (zh) * | 2005-11-15 | 2011-08-03 | 安集微电子（上海）有限公司 | 清洗液组合物 |
| US7534753B2 (en) * | 2006-01-12 | 2009-05-19 | Air Products And Chemicals, Inc. | pH buffered aqueous cleaning composition and method for removing photoresist residue |
| KR100678482B1 (ko) | 2006-01-17 | 2007-02-02 | 삼성전자주식회사 | 실리콘 표면의 세정용액 및 이를 사용하는 반도체 소자의제조방법들 |
| WO2008012231A2 (de) * | 2006-07-27 | 2008-01-31 | Basf Se | Verwendung von 1,5-dimethylpyrrolidon |
| KR100823714B1 (ko) * | 2006-08-24 | 2008-04-21 | 삼성전자주식회사 | 폴리머 제거용 세정액 및 이를 이용한 폴리머 제거방법 |
| US7879783B2 (en) | 2007-01-11 | 2011-02-01 | Air Products And Chemicals, Inc. | Cleaning composition for semiconductor substrates |
| US20080234162A1 (en) * | 2007-03-21 | 2008-09-25 | General Chemical Performance Products Llc | Semiconductor etch residue remover and cleansing compositions |
| US10391526B2 (en) | 2013-12-12 | 2019-08-27 | Lam Research Corporation | Electrostatic chuck cleaning fixture |
| US10894935B2 (en) | 2015-12-04 | 2021-01-19 | Samsung Electronics Co., Ltd. | Composition for removing silicone resins and method of thinning substrate by using the same |
| CN107034028B (zh) * | 2015-12-04 | 2021-05-25 | 三星电子株式会社 | 用于除去有机硅树脂的组合物、使用其薄化基材和制造半导体封装体的方法及使用其的系统 |
| CN106890816A (zh) * | 2015-12-21 | 2017-06-27 | 东莞新科技术研究开发有限公司 | 真空泵的清洗方法 |
| CN106289913A (zh) * | 2016-09-24 | 2017-01-04 | 中海油常州涂料化工研究院有限公司 | 一种用于无机富锌涂层表面腐蚀产物的脱膜液及其制备方法和使用方法 |
| CN106833962A (zh) * | 2016-12-26 | 2017-06-13 | 上海申和热磁电子有限公司 | 用于去除半导体蚀刻腔体陶瓷涂层零件污染物的清洗剂及其制备和应用 |
| CN106959590A (zh) * | 2017-04-11 | 2017-07-18 | 安徽高芯众科半导体有限公司 | 一种黄光制程光刻机零部件负光阻再生方法 |
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| US6235693B1 (en) * | 1999-07-16 | 2001-05-22 | Ekc Technology, Inc. | Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices |
| WO2001014510A1 (en) * | 1999-08-19 | 2001-03-01 | Ashland Inc. | Stripping and cleaning compositions |
| US6194366B1 (en) * | 1999-11-16 | 2001-02-27 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
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| KR20030070055A (ko) | 2003-08-27 |
| WO2002046344A1 (en) | 2002-06-13 |
| CN1479780A (zh) | 2004-03-03 |
| US20020107158A1 (en) | 2002-08-08 |
| EP1341883A4 (en) | 2004-06-02 |
| EP1341883A1 (en) | 2003-09-10 |
| US6656894B2 (en) | 2003-12-02 |
| AU2002216661A1 (en) | 2002-06-18 |
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