CN1296977C - 绝缘膜刻蚀装置 - Google Patents

绝缘膜刻蚀装置 Download PDF

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Publication number
CN1296977C
CN1296977C CNB021399832A CN02139983A CN1296977C CN 1296977 C CN1296977 C CN 1296977C CN B021399832 A CNB021399832 A CN B021399832A CN 02139983 A CN02139983 A CN 02139983A CN 1296977 C CN1296977 C CN 1296977C
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CN
China
Prior art keywords
substrate
plasma
substrate holder
etching
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB021399832A
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English (en)
Chinese (zh)
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CN1427457A (zh
Inventor
佐护康实
小河原米一
宫前昌典
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ANNEWHA Co Ltd
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ANNEWHA Co Ltd
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Publication date
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Publication of CN1427457A publication Critical patent/CN1427457A/zh
Application granted granted Critical
Publication of CN1296977C publication Critical patent/CN1296977C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
CNB021399832A 2001-12-04 2002-12-04 绝缘膜刻蚀装置 Expired - Fee Related CN1296977C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP370771/01 2001-12-04
JP370771/2001 2001-12-04
JP2001370771A JP3971603B2 (ja) 2001-12-04 2001-12-04 絶縁膜エッチング装置及び絶縁膜エッチング方法

Publications (2)

Publication Number Publication Date
CN1427457A CN1427457A (zh) 2003-07-02
CN1296977C true CN1296977C (zh) 2007-01-24

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ID=19179938

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021399832A Expired - Fee Related CN1296977C (zh) 2001-12-04 2002-12-04 绝缘膜刻蚀装置

Country Status (6)

Country Link
US (1) US7025855B2 (enExample)
EP (1) EP1324374B1 (enExample)
JP (1) JP3971603B2 (enExample)
KR (1) KR20030045644A (enExample)
CN (1) CN1296977C (enExample)
TW (1) TW569344B (enExample)

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JP3971603B2 (ja) * 2001-12-04 2007-09-05 キヤノンアネルバ株式会社 絶縁膜エッチング装置及び絶縁膜エッチング方法
JP4043488B2 (ja) * 2003-02-04 2008-02-06 東京エレクトロン株式会社 処理システム及び処理システムの稼動方法
US7009281B2 (en) * 2003-03-14 2006-03-07 Lam Corporation Small volume process chamber with hot inner surfaces
US7049052B2 (en) 2003-05-09 2006-05-23 Lam Research Corporation Method providing an improved bi-layer photoresist pattern
US20040244949A1 (en) * 2003-05-30 2004-12-09 Tokyo Electron Limited Temperature controlled shield ring
US7993460B2 (en) * 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
JP4413084B2 (ja) * 2003-07-30 2010-02-10 シャープ株式会社 プラズマプロセス装置及びそのクリーニング方法
JP4540953B2 (ja) * 2003-08-28 2010-09-08 キヤノンアネルバ株式会社 基板加熱装置及びマルチチャンバー基板処理装置
US20060000552A1 (en) * 2004-07-05 2006-01-05 Tokyo Electron Limited Plasma processing apparatus and cleaning method thereof
JP4629421B2 (ja) * 2004-12-06 2011-02-09 パナソニック株式会社 ドライエッチング方法及びドライエッチング装置
US20060218680A1 (en) * 2005-03-28 2006-09-28 Bailey Andrew D Iii Apparatus for servicing a plasma processing system with a robot
KR100757347B1 (ko) * 2006-08-30 2007-09-10 삼성전자주식회사 이온 주입 장치
JP4646880B2 (ja) * 2006-09-08 2011-03-09 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP4884180B2 (ja) * 2006-11-21 2012-02-29 東京エレクトロン株式会社 基板処理装置および基板処理方法
TWI319610B (en) * 2006-12-29 2010-01-11 Winbond Electronics Corp Method of manufacturing openings and via openings
KR20100022146A (ko) * 2008-08-19 2010-03-02 삼성전자주식회사 플라즈마 공정장치 및 그 방법
KR101097738B1 (ko) * 2009-10-09 2011-12-22 에스엔유 프리시젼 주식회사 기판 처리 장치 및 방법
KR100996210B1 (ko) * 2010-04-12 2010-11-24 세메스 주식회사 가스 분사 유닛 및 이를 이용한 박막 증착 장치 및 방법
KR101864132B1 (ko) * 2010-10-05 2018-07-13 에바텍 아크티엔게젤샤프트 폴리머 기판의 진공 처리를 위한 현장 컨디셔닝
JP5666248B2 (ja) * 2010-11-02 2015-02-12 キヤノンアネルバ株式会社 磁気記録媒体の製造装置
KR101260939B1 (ko) * 2011-03-09 2013-05-06 엘아이지에이디피 주식회사 점착 모듈, 이를 포함하는 기판 합착 장치 및 점착 패드의 제조방법
TWI585837B (zh) * 2011-10-12 2017-06-01 歐瑞康先進科技股份有限公司 濺鍍蝕刻室及濺鍍方法
JP6607795B2 (ja) * 2016-01-25 2019-11-20 東京エレクトロン株式会社 基板処理装置
CN107808838A (zh) * 2017-11-13 2018-03-16 武汉华星光电半导体显示技术有限公司 干刻蚀装置及干刻蚀方法
JP7304261B2 (ja) * 2019-10-07 2023-07-06 キヤノントッキ株式会社 成膜装置、成膜方法および電子デバイスの製造方法
CN114899759B (zh) * 2022-06-24 2024-01-19 国网湖北省电力有限公司超高压公司 机器人带电更换高压输电线路绝缘子操作方法

Citations (8)

* Cited by examiner, † Cited by third party
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US4624214A (en) * 1982-10-08 1986-11-25 Hitachi, Ltd. Dry-processing apparatus
JPH05243190A (ja) * 1992-03-02 1993-09-21 Tokyo Electron Yamanashi Kk プラズマ装置
CN1108768A (zh) * 1993-12-28 1995-09-20 松下电器产业株式会社 干刻蚀装置
US5622918A (en) * 1994-08-26 1997-04-22 Sumitomo Electric Industries, Ltd. Process and apparatus for preparing YBaCuO superconducting films
CN1148105A (zh) * 1995-07-10 1997-04-23 兰姆研究有限公司 利用等离子体约束装置的等离子体蚀刻装置
CN1209908A (zh) * 1996-01-26 1999-03-03 松下电子工业株式会社 半导体器件的制造装置
JPH11340208A (ja) * 1998-05-26 1999-12-10 Tokyo Electron Ltd プラズマ処理方法
US6171438B1 (en) * 1995-03-16 2001-01-09 Hitachi, Ltd. Plasma processing apparatus and plasma processing method

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JP3247270B2 (ja) * 1994-08-25 2002-01-15 東京エレクトロン株式会社 処理装置及びドライクリーニング方法
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Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4624214A (en) * 1982-10-08 1986-11-25 Hitachi, Ltd. Dry-processing apparatus
JPH05243190A (ja) * 1992-03-02 1993-09-21 Tokyo Electron Yamanashi Kk プラズマ装置
CN1108768A (zh) * 1993-12-28 1995-09-20 松下电器产业株式会社 干刻蚀装置
US5622918A (en) * 1994-08-26 1997-04-22 Sumitomo Electric Industries, Ltd. Process and apparatus for preparing YBaCuO superconducting films
US6171438B1 (en) * 1995-03-16 2001-01-09 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
CN1148105A (zh) * 1995-07-10 1997-04-23 兰姆研究有限公司 利用等离子体约束装置的等离子体蚀刻装置
CN1209908A (zh) * 1996-01-26 1999-03-03 松下电子工业株式会社 半导体器件的制造装置
JPH11340208A (ja) * 1998-05-26 1999-12-10 Tokyo Electron Ltd プラズマ処理方法

Also Published As

Publication number Publication date
TW200300981A (en) 2003-06-16
EP1324374A3 (en) 2006-04-19
US7025855B2 (en) 2006-04-11
JP3971603B2 (ja) 2007-09-05
TW569344B (en) 2004-01-01
US20030159779A1 (en) 2003-08-28
EP1324374A2 (en) 2003-07-02
EP1324374B1 (en) 2009-11-11
KR20030045644A (ko) 2003-06-11
JP2003174012A (ja) 2003-06-20
CN1427457A (zh) 2003-07-02

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Termination date: 20211204