KR20030045644A - 절연막 에칭장치 - Google Patents

절연막 에칭장치 Download PDF

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Publication number
KR20030045644A
KR20030045644A KR1020020076272A KR20020076272A KR20030045644A KR 20030045644 A KR20030045644 A KR 20030045644A KR 1020020076272 A KR1020020076272 A KR 1020020076272A KR 20020076272 A KR20020076272 A KR 20020076272A KR 20030045644 A KR20030045644 A KR 20030045644A
Authority
KR
South Korea
Prior art keywords
plasma
substrate
etching
process chamber
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020020076272A
Other languages
English (en)
Korean (ko)
Inventor
사고야스미
오가하라요네이치
미야마에마사노리
Original Assignee
아네르바 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아네르바 가부시키가이샤 filed Critical 아네르바 가부시키가이샤
Publication of KR20030045644A publication Critical patent/KR20030045644A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
KR1020020076272A 2001-12-04 2002-12-03 절연막 에칭장치 Ceased KR20030045644A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00370771 2001-12-04
JP2001370771A JP3971603B2 (ja) 2001-12-04 2001-12-04 絶縁膜エッチング装置及び絶縁膜エッチング方法

Publications (1)

Publication Number Publication Date
KR20030045644A true KR20030045644A (ko) 2003-06-11

Family

ID=19179938

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020076272A Ceased KR20030045644A (ko) 2001-12-04 2002-12-03 절연막 에칭장치

Country Status (6)

Country Link
US (1) US7025855B2 (enExample)
EP (1) EP1324374B1 (enExample)
JP (1) JP3971603B2 (enExample)
KR (1) KR20030045644A (enExample)
CN (1) CN1296977C (enExample)
TW (1) TW569344B (enExample)

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JP3971603B2 (ja) * 2001-12-04 2007-09-05 キヤノンアネルバ株式会社 絶縁膜エッチング装置及び絶縁膜エッチング方法
JP4043488B2 (ja) * 2003-02-04 2008-02-06 東京エレクトロン株式会社 処理システム及び処理システムの稼動方法
US7009281B2 (en) * 2003-03-14 2006-03-07 Lam Corporation Small volume process chamber with hot inner surfaces
US7049052B2 (en) * 2003-05-09 2006-05-23 Lam Research Corporation Method providing an improved bi-layer photoresist pattern
US20040244949A1 (en) * 2003-05-30 2004-12-09 Tokyo Electron Limited Temperature controlled shield ring
US7993460B2 (en) * 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
JP4413084B2 (ja) * 2003-07-30 2010-02-10 シャープ株式会社 プラズマプロセス装置及びそのクリーニング方法
JP4540953B2 (ja) * 2003-08-28 2010-09-08 キヤノンアネルバ株式会社 基板加熱装置及びマルチチャンバー基板処理装置
US20060000552A1 (en) * 2004-07-05 2006-01-05 Tokyo Electron Limited Plasma processing apparatus and cleaning method thereof
JP4629421B2 (ja) * 2004-12-06 2011-02-09 パナソニック株式会社 ドライエッチング方法及びドライエッチング装置
US20060218680A1 (en) * 2005-03-28 2006-09-28 Bailey Andrew D Iii Apparatus for servicing a plasma processing system with a robot
KR100757347B1 (ko) * 2006-08-30 2007-09-10 삼성전자주식회사 이온 주입 장치
JP4646880B2 (ja) * 2006-09-08 2011-03-09 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP4884180B2 (ja) * 2006-11-21 2012-02-29 東京エレクトロン株式会社 基板処理装置および基板処理方法
TWI319610B (en) * 2006-12-29 2010-01-11 Winbond Electronics Corp Method of manufacturing openings and via openings
KR20100022146A (ko) * 2008-08-19 2010-03-02 삼성전자주식회사 플라즈마 공정장치 및 그 방법
KR101097738B1 (ko) * 2009-10-09 2011-12-22 에스엔유 프리시젼 주식회사 기판 처리 장치 및 방법
KR100996210B1 (ko) * 2010-04-12 2010-11-24 세메스 주식회사 가스 분사 유닛 및 이를 이용한 박막 증착 장치 및 방법
CN103189957B (zh) * 2010-10-05 2016-01-20 欧瑞康先进科技股份公司 用于真空加工聚合物基板的原位调节
JP5666248B2 (ja) * 2010-11-02 2015-02-12 キヤノンアネルバ株式会社 磁気記録媒体の製造装置
KR101260939B1 (ko) * 2011-03-09 2013-05-06 엘아이지에이디피 주식회사 점착 모듈, 이를 포함하는 기판 합착 장치 및 점착 패드의 제조방법
TWI585837B (zh) * 2011-10-12 2017-06-01 歐瑞康先進科技股份有限公司 濺鍍蝕刻室及濺鍍方法
JP6607795B2 (ja) * 2016-01-25 2019-11-20 東京エレクトロン株式会社 基板処理装置
CN107808838A (zh) * 2017-11-13 2018-03-16 武汉华星光电半导体显示技术有限公司 干刻蚀装置及干刻蚀方法
JP7304261B2 (ja) * 2019-10-07 2023-07-06 キヤノントッキ株式会社 成膜装置、成膜方法および電子デバイスの製造方法
CN114899759B (zh) * 2022-06-24 2024-01-19 国网湖北省电力有限公司超高压公司 机器人带电更换高压输电线路绝缘子操作方法

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JPS5950179A (ja) 1982-09-16 1984-03-23 Ulvac Corp 真空槽のクリ−ニング方法
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US5252178A (en) * 1992-06-24 1993-10-12 Texas Instruments Incorporated Multi-zone plasma processing method and apparatus
JPH06310588A (ja) 1993-04-26 1994-11-04 Fuji Electric Co Ltd プラズマ処理装置および該装置におけるドライクリーニング方法
US5474647A (en) * 1993-11-15 1995-12-12 Hughes Aircraft Company Wafer flow architecture for production wafer processing
JPH07201818A (ja) * 1993-12-28 1995-08-04 Matsushita Electric Ind Co Ltd ドライエッチング装置
US5514246A (en) * 1994-06-02 1996-05-07 Micron Technology, Inc. Plasma reactors and method of cleaning a plasma reactor
JP3277209B2 (ja) 1994-06-08 2002-04-22 日本電信電話株式会社 ドライエッチング装置のドライ洗浄方法
JP3247270B2 (ja) * 1994-08-25 2002-01-15 東京エレクトロン株式会社 処理装置及びドライクリーニング方法
JPH0867968A (ja) * 1994-08-26 1996-03-12 Sumitomo Electric Ind Ltd 酸化物薄膜の作製方法
JPH0897147A (ja) * 1994-09-29 1996-04-12 Mitsubishi Electric Corp エピタキシャル結晶成長装置
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JP3350264B2 (ja) 1994-12-22 2002-11-25 松下電器産業株式会社 プラズマクリーニング方法
JP3257328B2 (ja) * 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US5534751A (en) * 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
WO1997027622A1 (fr) * 1996-01-26 1997-07-31 Matsushita Electronics Corporation Appareil de fabrication de semiconducteurs
JP3597330B2 (ja) 1996-10-04 2004-12-08 アネルバ株式会社 表面処理装置
JPH10144498A (ja) 1996-11-12 1998-05-29 Kokusai Electric Co Ltd プラズマ処理装置およびプラズマ処理方法
US6443165B1 (en) * 1996-11-14 2002-09-03 Tokyo Electron Limited Method for cleaning plasma treatment device and plasma treatment system
JPH10154696A (ja) 1996-11-22 1998-06-09 Nittetsu Semiconductor Kk ドライエッチング装置プロセスチャンバーのドライクリーニング方法
JPH10178003A (ja) 1996-12-17 1998-06-30 Kokusai Electric Co Ltd プラズマ処理装置
JPH1140502A (ja) 1997-07-15 1999-02-12 Hitachi Ltd 半導体製造装置のドライクリーニング方法
JP3676919B2 (ja) 1997-10-09 2005-07-27 株式会社アルバック 反応性イオンエッチング装置
JP3566522B2 (ja) 1997-12-17 2004-09-15 株式会社日立製作所 プラズマ処理装置内のプラズマクリーニング方法
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JP3238137B2 (ja) 1999-03-23 2001-12-10 株式会社日立製作所 プラズマ処理室のクリーニング方法
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TW478026B (en) * 2000-08-25 2002-03-01 Hitachi Ltd Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield
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US6852242B2 (en) * 2001-02-23 2005-02-08 Zhi-Wen Sun Cleaning of multicompositional etchant residues
JP3971603B2 (ja) * 2001-12-04 2007-09-05 キヤノンアネルバ株式会社 絶縁膜エッチング装置及び絶縁膜エッチング方法

Also Published As

Publication number Publication date
CN1427457A (zh) 2003-07-02
JP2003174012A (ja) 2003-06-20
CN1296977C (zh) 2007-01-24
TW200300981A (en) 2003-06-16
EP1324374B1 (en) 2009-11-11
EP1324374A3 (en) 2006-04-19
JP3971603B2 (ja) 2007-09-05
US20030159779A1 (en) 2003-08-28
EP1324374A2 (en) 2003-07-02
TW569344B (en) 2004-01-01
US7025855B2 (en) 2006-04-11

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