JPS5546576A - Device for preventing semiconductor device from contaminating - Google Patents

Device for preventing semiconductor device from contaminating

Info

Publication number
JPS5546576A
JPS5546576A JP12076578A JP12076578A JPS5546576A JP S5546576 A JPS5546576 A JP S5546576A JP 12076578 A JP12076578 A JP 12076578A JP 12076578 A JP12076578 A JP 12076578A JP S5546576 A JPS5546576 A JP S5546576A
Authority
JP
Japan
Prior art keywords
trap
inlet
wafer
furnace
polluted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12076578A
Other languages
Japanese (ja)
Inventor
Yutaka Etsuno
Jiro Oshima
Hiroyuki Kino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12076578A priority Critical patent/JPS5546576A/en
Publication of JPS5546576A publication Critical patent/JPS5546576A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To prevent polluted material from adhering onto the inner wall of the inlet of a high temperature furnace for wafers mounting a trap having a low temperature portion within the inlet to adhere the polluted material evaporated from the interior of the furnace onto the surface of the trap.
CONSTITUTION: A high temeperature furnace 1 is provided at one end with a gas inlet 5 and at the other with an opening as a wafer inlet 8, and contains a wafer 2 carried on a boat 3 at a high temperature unit 6 of heater 7 provided externally. A trap 9 is engaged instead of a cap at the wafer inlet 8 to adhere the polluted material evaporated to the outer wall communicating with the outer atmosphere provided in the trap 9. Thus, the inner surface of the inlet 8 is cleaned when the trap 9 is removed to thereby prevent the wafer from being polluted when the wafer 2 is charged or discharged at the furnace. Or, inlet and outlet nozzles 11 and 12 are provided at the trap to forcibly cool the trap 10.
COPYRIGHT: (C)1980,JPO&Japio
JP12076578A 1978-09-30 1978-09-30 Device for preventing semiconductor device from contaminating Pending JPS5546576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12076578A JPS5546576A (en) 1978-09-30 1978-09-30 Device for preventing semiconductor device from contaminating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12076578A JPS5546576A (en) 1978-09-30 1978-09-30 Device for preventing semiconductor device from contaminating

Publications (1)

Publication Number Publication Date
JPS5546576A true JPS5546576A (en) 1980-04-01

Family

ID=14794435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12076578A Pending JPS5546576A (en) 1978-09-30 1978-09-30 Device for preventing semiconductor device from contaminating

Country Status (1)

Country Link
JP (1) JPS5546576A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5876954U (en) * 1981-11-16 1983-05-24 株式会社日立製作所 terminal device
JPS62130520A (en) * 1985-12-02 1987-06-12 Fuji Electric Co Ltd Diffusion with sealed pipe
US5571333A (en) * 1994-06-02 1996-11-05 Shin-Etsu Handotai Co. Ltd. Heat treatment furnace with an exhaust baffle
US7025855B2 (en) * 2001-12-04 2006-04-11 Anelva Corporation Insulation-film etching system
US11326697B2 (en) 2018-06-12 2022-05-10 Marco Systemanalyse Und Entwicklung Gmbh Jet valve

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5876954U (en) * 1981-11-16 1983-05-24 株式会社日立製作所 terminal device
JPS62130520A (en) * 1985-12-02 1987-06-12 Fuji Electric Co Ltd Diffusion with sealed pipe
US5571333A (en) * 1994-06-02 1996-11-05 Shin-Etsu Handotai Co. Ltd. Heat treatment furnace with an exhaust baffle
US7025855B2 (en) * 2001-12-04 2006-04-11 Anelva Corporation Insulation-film etching system
US11326697B2 (en) 2018-06-12 2022-05-10 Marco Systemanalyse Und Entwicklung Gmbh Jet valve

Similar Documents

Publication Publication Date Title
JPS56158873A (en) Dry etching method
JPS5546576A (en) Device for preventing semiconductor device from contaminating
JPS5691417A (en) Heating treatment device for wafer
JPS5572029A (en) Tray for semiconductor wafer
JPS57210630A (en) Removing device for dust
JPS57166033A (en) Applying device for resist with adjusting mechanism for quantity of exhaust gas
JPS5587435A (en) Method of producing semiconductor device
JPS5536944A (en) Method and device for washing rectangular substrate
JPS5742121A (en) Method and apparatus for drying wafer
JPS5394766A (en) Rotation-system processor of semiconductor wafer
JPS57122904A (en) Removal of accumulated substance in cold trap apparatus
JPS55154583A (en) Etching processing apparatus
JPH0319222Y2 (en)
JPS5559631A (en) Gas discharge displaying device
JPS52133687A (en) Device for attaching and detaching filter for air pressure feed powder transport vehicle
JPS555227A (en) Device for surface treatment
JPS5276761A (en) Manufacturing method of heat pipe
JPS5458362A (en) Dry etching method
JPS548456A (en) Wafer cleansing/drying device
JPS5496880A (en) Dust removal device
JPS5413459A (en) Removing apparatus for sulfur oxides in exhaust gas
JPS55109541A (en) Temperature controller of molding sand
JPS5713737A (en) Plasma vapor-phase method
JPS54146689A (en) Sample container
JPS5551223A (en) Combustion device