JP3971603B2 - 絶縁膜エッチング装置及び絶縁膜エッチング方法 - Google Patents

絶縁膜エッチング装置及び絶縁膜エッチング方法 Download PDF

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Publication number
JP3971603B2
JP3971603B2 JP2001370771A JP2001370771A JP3971603B2 JP 3971603 B2 JP3971603 B2 JP 3971603B2 JP 2001370771 A JP2001370771 A JP 2001370771A JP 2001370771 A JP2001370771 A JP 2001370771A JP 3971603 B2 JP3971603 B2 JP 3971603B2
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Japan
Prior art keywords
substrate
etching
plasma
process chamber
gas
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Expired - Fee Related
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JP2001370771A
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English (en)
Japanese (ja)
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JP2003174012A5 (enExample
JP2003174012A (ja
Inventor
康実 佐護
米一 小河原
昌典 宮前
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Canon Anelva Corp
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Canon Anelva Corp
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Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to JP2001370771A priority Critical patent/JP3971603B2/ja
Priority to TW091133170A priority patent/TW569344B/zh
Priority to KR1020020076272A priority patent/KR20030045644A/ko
Priority to EP02258328A priority patent/EP1324374B1/en
Priority to US10/310,685 priority patent/US7025855B2/en
Priority to CNB021399832A priority patent/CN1296977C/zh
Publication of JP2003174012A publication Critical patent/JP2003174012A/ja
Publication of JP2003174012A5 publication Critical patent/JP2003174012A5/ja
Application granted granted Critical
Publication of JP3971603B2 publication Critical patent/JP3971603B2/ja
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Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
JP2001370771A 2001-12-04 2001-12-04 絶縁膜エッチング装置及び絶縁膜エッチング方法 Expired - Fee Related JP3971603B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001370771A JP3971603B2 (ja) 2001-12-04 2001-12-04 絶縁膜エッチング装置及び絶縁膜エッチング方法
TW091133170A TW569344B (en) 2001-12-04 2002-11-12 Insulation-film etching system
EP02258328A EP1324374B1 (en) 2001-12-04 2002-12-03 Etching System for an insulation-film
KR1020020076272A KR20030045644A (ko) 2001-12-04 2002-12-03 절연막 에칭장치
US10/310,685 US7025855B2 (en) 2001-12-04 2002-12-04 Insulation-film etching system
CNB021399832A CN1296977C (zh) 2001-12-04 2002-12-04 绝缘膜刻蚀装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001370771A JP3971603B2 (ja) 2001-12-04 2001-12-04 絶縁膜エッチング装置及び絶縁膜エッチング方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006333816A Division JP4469364B2 (ja) 2006-12-11 2006-12-11 絶縁膜エッチング装置

Publications (3)

Publication Number Publication Date
JP2003174012A JP2003174012A (ja) 2003-06-20
JP2003174012A5 JP2003174012A5 (enExample) 2005-11-04
JP3971603B2 true JP3971603B2 (ja) 2007-09-05

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JP2001370771A Expired - Fee Related JP3971603B2 (ja) 2001-12-04 2001-12-04 絶縁膜エッチング装置及び絶縁膜エッチング方法

Country Status (6)

Country Link
US (1) US7025855B2 (enExample)
EP (1) EP1324374B1 (enExample)
JP (1) JP3971603B2 (enExample)
KR (1) KR20030045644A (enExample)
CN (1) CN1296977C (enExample)
TW (1) TW569344B (enExample)

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KR101864132B1 (ko) * 2010-10-05 2018-07-13 에바텍 아크티엔게젤샤프트 폴리머 기판의 진공 처리를 위한 현장 컨디셔닝
JP5666248B2 (ja) * 2010-11-02 2015-02-12 キヤノンアネルバ株式会社 磁気記録媒体の製造装置
KR101260939B1 (ko) * 2011-03-09 2013-05-06 엘아이지에이디피 주식회사 점착 모듈, 이를 포함하는 기판 합착 장치 및 점착 패드의 제조방법
TWI585837B (zh) * 2011-10-12 2017-06-01 歐瑞康先進科技股份有限公司 濺鍍蝕刻室及濺鍍方法
JP6607795B2 (ja) * 2016-01-25 2019-11-20 東京エレクトロン株式会社 基板処理装置
CN107808838A (zh) * 2017-11-13 2018-03-16 武汉华星光电半导体显示技术有限公司 干刻蚀装置及干刻蚀方法
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Also Published As

Publication number Publication date
CN1296977C (zh) 2007-01-24
TW200300981A (en) 2003-06-16
EP1324374A3 (en) 2006-04-19
US7025855B2 (en) 2006-04-11
TW569344B (en) 2004-01-01
US20030159779A1 (en) 2003-08-28
EP1324374A2 (en) 2003-07-02
EP1324374B1 (en) 2009-11-11
KR20030045644A (ko) 2003-06-11
JP2003174012A (ja) 2003-06-20
CN1427457A (zh) 2003-07-02

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