WO2004070802A1 - 処理システム及び処理システムの稼働方法 - Google Patents
処理システム及び処理システムの稼働方法 Download PDFInfo
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- WO2004070802A1 WO2004070802A1 PCT/JP2004/001110 JP2004001110W WO2004070802A1 WO 2004070802 A1 WO2004070802 A1 WO 2004070802A1 JP 2004001110 W JP2004001110 W JP 2004001110W WO 2004070802 A1 WO2004070802 A1 WO 2004070802A1
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- Prior art keywords
- temperature
- reaction vessel
- cleaning
- gas
- exhaust
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Definitions
- the present invention relates to a processing system such as a vacuum CVD (chemical vapor deposition) apparatus for periodically cleaning the inside of a reaction vessel with a cleaning gas and a method of operating the processing system.
- a processing system such as a vacuum CVD (chemical vapor deposition) apparatus for periodically cleaning the inside of a reaction vessel with a cleaning gas and a method of operating the processing system.
- LP-CVD low pressure chemical vapor deposition
- SiH 2 C 12 dichlorosilane
- NH 3 ammonia
- NH 4 C1 ammonium chloride
- the silicon nitride film adheres not only to the film forming surface of a semiconductor wafer (hereinafter referred to as a wafer) but also to the inner wall of the reaction vessel and a mounting jig for holding the wafer.
- a wafer a semiconductor wafer
- the cumulative film thickness of the silicon nitride film reaches a certain thickness, the film is peeled off, and the amount of contamination and dust increases.
- changes in the emissivity of the internal components of the reaction vessel can affect the temperature stability in the reaction vessel. These factors can reduce product yield.
- a corrosive etching gas such as chlorine trifluoride (C1F 3 ) is introduced into the LP-CVD apparatus, and a chemical reaction between the corrosive etching gas and the silicon nitride film is used.
- the dry etching method is widely used (see, for example, JP-A-2000-77391).
- C1F 3 gas are being limited use in view of environmental issues.
- a cleaning gas containing F 2 gas for example, a mixed gas of fluorine (F 2 ) gas and hydrogen fluoride (HF) gas has been studied.
- the reactant of stainless steel and fluorine also acts as a catalyst for silicon nitride film formation. Therefore, abnormal growth of the silicon nitride film may occur at the position where the reactant has adhered. This can significantly impair the uniformity of the silicon nitride film formed on the wafer surface within the wafer surface.
- the present invention relates to a member (for example, an exhaust passage) that is heated to suppress the adhesion of a reaction by-product.
- the above problems that the processing system (for example, LP-CVD equipment that generates a silicon nitride film) had a possibility of corroding when a corrosive cleaning gas was flowed into the equipment.
- the present invention has been made in view of the above points, and an object thereof is to provide a processing system capable of minimizing corrosion of a stainless steel part of an exhaust passage member, and an operation method of the processing system.
- the temperature of the exhaust path member can be changed, and the cleaning is automatically terminated in accordance with the reaction state between the stainless steel part of the exhaust path member and the cleaning gas.
- the purpose of the present invention is to provide a processing system to operate and a method of operating the processing system. '
- the present invention provides a reaction container in which a substrate to be processed is placed, a processing gas supply mechanism for supplying a processing gas into the reaction container at the time of substrate processing, and a cleaning device having a corrosive property in the reaction container during cleaning.
- a cleaning gas supply mechanism for supplying a gas, an exhaust path member connected to the reaction vessel, a heating unit for heating a specific portion of the reaction vessel and the exhaust path member, and a temperature of the specific section.
- Temperature detecting means for detecting Temperature controlling means for controlling the heating member such that a part of the specified temperature becomes a predetermined target temperature based on a detection value detected by the temperature detecting means, A temperature changing unit that changes between the time of substrate processing and the time of cleaning, wherein the target temperature is determined by the temperature changing unit during the substrate processing. While adhesion of reaction by-products into the portion is a temperature which can be suppressed, at the time of Cree-learning is a process system that feature to be a temperature at which corrosion of the specific part can be suppressed.
- adhesion of reaction by-products at the time of treatment is performed on a specific portion (the exhaust gas path member, the lid closing the opening of the reaction vessel, etc.) of the reaction vessel and the exhaust path member.
- corrosion during cleaning can also be suppressed. Therefore, the service life of the portion can be extended.
- the processing system further comprises cooling means for cooling said specific portion)
- the processing system further includes a reaction detection unit that detects a reaction between the specific part and the cleaning gas during cleaning.
- a reaction detection unit that detects a reaction between the specific part and the cleaning gas during cleaning.
- the temperature changing means changes the target temperature at the time of cleaning to a lower target temperature. Further, it is preferable that the supply of the cleaning gas by the cleaning gas supply mechanism is stopped when the temperature changing means changes the target temperature during cleaning to a predetermined lower limit temperature.
- the processing system further includes: a device control unit that controls the processing of the substrate by the processing gas; and a management control unit that performs overall process management. It is preferable that they are provided integrally.
- the management control unit is configured to determine the introduction time of the cleaning gas based on information sent from the device control unit, and the temperature changing unit is configured to perform the operation until the introduction time. Then, the target temperature is changed.
- the cleaning gas includes a fluorine gas.
- the specific part is a part or all of the exhaust path member.
- the specific part is a part of the reaction vessel.
- the present invention also provides a reaction vessel in which a substrate to be processed is placed, a processing gas supply mechanism for supplying a processing gas into the reaction vessel during substrate processing, and a corrosive property in the reaction vessel during cleaning.
- a cleaning gas supply mechanism for supplying a cleaning gas having the same, an exhaust path member connected to the reaction vessel, and heating means for heating a specific part of the reaction vessel and the exhaust path member.
- An operation method of a processing system wherein a step of carrying a substrate into the reaction vessel, and a step of heating the specific part to a temperature at which adhesion of a reaction by-product to the specific part can be suppressed, Supplying the processing gas into the reaction vessel to perform a process on the substrate; unloading the substrate from the reaction vessel; A step of setting a temperature at which corrosion by the cleaning gas can be suppressed, and a step of supplying the cleaning gas into the reaction vessel to clean the reaction vessel. is there.
- a specific part (exhaust) of the reaction vessel and the exhaust path member is provided.
- corrosion in cleaning can also be suppressed in airway members and lids that close the opening of the reaction vessel. Therefore, the service life of the portion can be extended.
- the step of setting the specific portion to a temperature at which corrosion of the specific portion by the cleaning gas can be suppressed includes a step of forcibly cooling the specific portion.
- the step of supplying the cleaning gas into the reaction vessel to clean the reaction vessel includes a step of monitoring a reaction between the specific portion and the cleaning gas.
- the step of supplying the cleaning gas into the reaction vessel to clean the reaction vessel includes the step of: detecting a reaction between the specific portion and the cleaning gas. Includes the step of further reducing the temperature of some parts.
- the step of supplying the cleaning gas into the reaction vessel to clean the reaction vessel includes the step of cleaning the reaction vessel when the temperature of the specific portion is reduced to a predetermined lower limit temperature. And stopping the supply of the cleaning gas by the cleaning gas supply mechanism.
- FIG. 1 is an overall configuration diagram illustrating a processing system according to an embodiment of the present invention.
- FIG. 2 is a configuration diagram illustrating a control system of the processing system according to an embodiment of the present invention.
- FIG. 3 is a flowchart showing the operation of the processing system according to the embodiment of the present invention.
- FIG. 4 is a flowchart showing the operation of the processing system according to the embodiment of the present invention.
- FIG. 5 is an explanatory diagram showing a target temperature of the exhaust part of the processing system according to the embodiment of the present invention.
- optimal temperature control is performed on the exhaust unit (exhaust path member) of the LP-CVD device that generates a silicon nitride film.
- the time information of the cleaning process can be obtained from the device control unit that controls the main unit of the LP-CVD system.
- the heat output data can be obtained from the exhaust unit of the LP-CVD system
- the exhaust unit Temperature detection data can be obtained from the temperature detection means described above
- analysis data can be obtained from the exhaust gas component analyzer attached to the LP-CVD system.
- the exhaust temperature control operation determining unit performs the optimal temperature control of the exhaust unit in accordance with the exhaust temperature control operation determining program.
- FIG. 1 shows the overall processing system of the present embodiment. It is a block diagram.
- a reaction tube 1 has a double structure including an inner tube 1a and an outer tube 1b made of, for example, quartz.
- a cylindrical manifold 11 made of metal, for example, stainless steel is provided at the lower side of the reaction tube 1.
- the upper end of the inner pipe 1a is open, and the inner pipe la is supported on the inner side of the manifold 11.
- the upper end of the outer tube 1 b is closed, and the lower end is airtightly joined to the upper end of the manifold 11.
- a reaction vessel is constituted by the reaction tube 1 and the manifold 11.
- the reaction tube c the reaction tube 1 the wafer W indicates a state of being carried as the substrate in 1, a plurality of wafers W are spaced vertically at each horizontal state It is placed in a shelf shape on a quartz wafer boat 12 as a holder.
- the wafer boat 12 is supported by a rotating shaft 15 extending above the lid 13.
- the rotation shaft 15 is surrounded by a heat insulation unit 14 made of quartz.
- the heat insulation unit 14 is made of, for example, a heat insulation unit such as a quartz fin.
- the lid 13 is mounted on a boat elevator 16 for loading and unloading the wafer boat 12 into and out of the reaction tube 1. When the lid 13 is at the upper limit position, the lower end of the manifold 11 is Has the role of closing the opening.
- the rotating shaft 15 is rotated by a drive unit 17 provided on a boat elevator 16 below the lid 13. As a result, the wafer port 12 rotates.
- a heating means such as a resistance heating element is There is a tier 2 Around the heat sink 2, a furnace body (not shown) is provided.
- the first film-forming gas supply pipe 21 and the second film-forming gas supply pipe 22 are used for supplying dichlorsilane (SiH 2 C 12) gas and ammonia (NH 3 ) gas, respectively. It is connected to a gas supply source (not shown).
- V1 to V3 are valves, for example, air valves for supplying and stopping the supply of gas.
- Reference numerals 24 to 27 denote mass flow controllers for adjusting the gas flow rate.
- An exhaust pipe 3 is connected to the manifold 11 so as to exhaust air from between the inner pipe 1a and the outer pipe 1b. I have.
- the exhaust pipe 3 is connected to a vacuum pump 31 serving as a vacuum exhaust means. Further, the exhaust pipe 3 has a main valve 32 in the middle. By opening and closing the main valve 32, the inside of the outer tube 1b and the vacuum pump 31 can be communicated or shut off. Also, by adjusting the degree of the main valve 32, the pressure in the reaction vessel can be controlled. The gas discharged from the vacuum pump 31 is released to the atmosphere via the abatement device 3 ⁇ .
- a tape-shaped exhaust portion 33 which is a heating means capable of heating the inner wall of the exhaust pipe 3, is provided in a wound state. Power is supplied from the power supply section 34 to the exhaust section 3.
- a cooling fluid for cooling the exhaust pipe 3 is provided on the outer periphery of the exhaust pipe 3 from the manifold 11 side to the vacuum pump 31 side, that is, from the upstream side to the downstream side of the exhaust path.
- a cooling pipe 41 as a flow path member is provided so as to flow therethrough. Cooling fluid, as the c cooling fluid by flickering one Yunidzuto 4 2 is adapted to be cooled to a predetermined temperature, for example, water is used, a variety of other cooling fluid, for example H 2, He, oil, air, etc. may be used.
- the first cooling means (the outer cooling means) for cooling the outside of the exhaust pipe 3 by the cooling pipe 41 and the chiller unit 42 is described.
- (Stage) 100 constitutes.
- a cooling gas is supplied into the exhaust pipe 3.
- a cooling gas line 43 may be provided as the second cooling means (inside cooling means) 200.
- the supply port of the cooling gas line 43 can be arranged at a position near the upstream end of the exhaust pipe 3.
- an inert gas such as H 2 , He, or N 2 can be used.
- the base end side of the cooling gas line 43 is connected to a gas supply source 45 via a valve V4 and a flow rate adjusting unit 44.
- the second cooling means 200 can be used except for the closed state of the main valve 32.
- the exhaust pipe 3 is provided with a plurality of exhaust-portion thermocouples 35 as temperature detecting means for detecting the temperature of the exhaust pipe 3, for example, along the exhaust direction.
- the thermocouple 35 can be substituted with various other temperature measuring devices, such as a thermometer and a pyrometer.
- the processing system of the present invention is provided with a quadrupole mass spectrometer as a reaction detecting means so as to be able to monitor a reaction between a stainless steel member constituting the exhaust pipe 3 and a cleaning gas which is a corrosive etching gas.
- Q_mass a quadrupole mass spectrometer
- the gas at the position immediately upstream of the main valve 32 is collected by the sampling pipe 37.
- the Q-mass 36 analyzes the concentration information of the components contained in the gas in the exhaust pipe 3, for example, CrF 2 , in the form of ion current, and stores the gas in the exhaust pipe in real time in a storage unit (recording medium) described later. It has a function to transmit as component data.
- Q-mass is used as a gas analyzer as a reaction detecting means.
- the reaction analysis of the inner wall of the exhaust pipe 3 may be performed by using a device for estimating the reaction state based on the reaction heat.
- the inside of the exhaust pipe 3 is heated by the heating means, the exhaust pipe 3 is cooled by the cooling means, and the reaction state between the stainless steel member of the exhaust pipe 3 and the gas is monitored.
- heating and cooling are performed not only on the exhaust pipe 3 itself, but also on the entire exhaust path member, that is, on the exhaust pipe and also on intervening devices such as the main valve 32.
- the reaction with the gas may be detected.
- FIG. 2 is a configuration diagram illustrating a control system of the processing system according to the present embodiment.
- an apparatus control unit 5 composed of, for example, a computer includes a process recipe, a cleaning recipe, and the like. In these recipes, for example, the target temperature of the inner wall of the exhaust pipe 3 is included.
- the apparatus control section 5 controls the process temperature, process pressure, gas flow rate, etc. of the LP-CVD apparatus main body 300 during the process and during cleaning, while the target temperature of the inner wall of the exhaust pipe 3 ⁇ the cleaning start time. And a function of transmitting information such as the end time and the like to a control unit 6 described later.
- the cleaning start time is a time at which a cleaning recipe is selected and the apparatus main body 300 starts operating toward processing conditions such as pressure and temperature determined by the recipe.
- a control unit 6 composed of a computer separate from the device control unit 5 includes a bus 61, a CPU (central processing unit) 62, a first storage unit (recording medium) 63, It has a section temperature control operation determination program (recording section for storing) 64 and a second storage section 65.
- the control unit 6 is connected to the Q-mass 36 and an exhaust unit temperature controller 7 as an exhaust unit temperature control unit.
- the control unit 6 uses a variety of information communication networks and a data base together to develop a series of processes related to the development of devices to be formed on wafers, processing of substrates, assembly of equipment, and other related processes. It can be configured as a management control unit that comprehensively manages information and.
- a communication unit (not shown) for exchanging information with one or more devices in which a process before or after the process performed by the LP-CVD device shown in FIG. 1 is performed.
- the exhaust unit temperature controller 7 controls the power supply unit 3 4 based on the target temperature and the temperature detection value from the thermocouple 35 so that the inner wall of the exhaust pipe 3 becomes higher than the sublimation temperature when the silicon nitride film is formed.
- PID control is performed on the exhaust section 33 via the. That is, the difference between the detected temperature value and the temperature set value corresponding to the target temperature is subjected to PID control by the PID calculation circuit, and is used to determine the power supply to the exhaust part 33.
- a table 66 is stored which is information in which each of the process and the cleaning corresponds to the target temperature of the inner wall of the exhaust pipe 3 (exit section target temperature).
- This table 66 is, for example, created in advance by the device control unit 5, The data is fetched from the device control unit 5 or is created by the control unit 6 based on the data obtained from the device control unit 5.
- the respective values of the first portion and the second portion are described as the exhaust portion target temperature. If the inner wall of the exhaust pipe 3 is divided into a plurality of parts in the exhaust direction, for example, if it is divided into a part close to the reaction vessel and a part far from the reaction vessel, heating means (for example, heater) and temperature detecting means for each part
- thermocouple for example, a thermocouple
- power supply unit and an exhaust unit are provided to perform temperature control independently.
- the target temperature is set by setting the part near the reaction vessel as the first part and the part far from the reaction vessel as the second part. Since the first portion is a portion into which the gas heated in the reaction vessel enters, for example, a temperature lower than that of the second portion is set. For example, the target temperature of the first part and the target temperature of the second part at the time of cleaning are set to 20 ° C. and 25 ° C., respectively. During the process, the target temperature of the first portion and the target temperature of the second portion are set to, for example, 180 ° C. and 200 ° C., respectively.
- exhaust target temperatures can be determined according to the type of gas to be used, the material of the exhaust pipe 3 (particularly, the material of the coating on the inner surface), and the like. Can be entered via the remote control panel.
- These exhaust-portion target temperatures are read out, for example, in accordance with the processing performed in the reaction vessel according to the exhaust-portion temperature control operation determination program 64, and sent to the exhaust-portion temperature controller 7.
- the control unit 6 as the exhaust temperature control operation determining unit determines the target temperature of the inner wall of the exhaust pipe 3 as the exhaust unit according to the exhaust temperature control operation determining program 64. In other words, a change is made from the target temperature at the time of the film forming process to the target temperature appropriate for the cleaning.
- the exhaust-port temperature controller 7 operates the exhaust port 33 to conform to the target temperature. In this example, the target temperature is changed by reading the target temperature in the table 66.
- the exhaust temperature control operation determination program 64, the CPU 62, and the One bull 66 constitutes a temperature changing means for changing the target temperature of the inner wall of the exhaust pipe 3.
- the detected temperature value of the thermocouple 35 is sent to the exhaust temperature controller 7, sampled periodically (every 10 seconds in this embodiment) by the control unit 6, and stored in the storage unit 63. .
- the exhaust unit temperature controller 7 operates the first cooling means 100 accordingly. Specifically, for example, a flow instruction is sent to the chiller unit 42. Upon receiving the flow instruction, the chiller unit 42 flows the fluid into the cooling pipe 41 surrounding the exhaust pipe 3. This lowers the temperature of the exhaust pipe 3 to a lower temperature. It does not matter if any fluid is used as long as it has a high thermal conductivity. In this embodiment, for example, water having a temperature of 5 [° C] and a flow rate of 5 to 15 [1 / min] is flowed.
- the storage unit 63 stores the cleaning start time and the cleaning end time transmitted from the device control unit 5, the exhaust gas component data transmitted from the Q-mass 36, and the exhaust thermocouple 35. It stores information such as the temperature detection value sent and the output of heat from the exhaust heater 33.
- the exhaust part temperature control operation determination program 64 determines the exhaust part target temperature based on the above-mentioned information sent to the storage part 63 and stored. If necessary, the exhaust temperature control operation determination program 64 creates a cooling operation instruction in the first cooling means 100. When the second cooling means 200 is provided, a cooling operation instruction for the second cooling means 200 may be created based on the above-mentioned information.
- the flow state of the cooling fluid or gas and the flow stoppage are controlled based on the target temperature and / or the detected temperature value. Instead of selecting the state, the flow rate may be controlled.
- step S1 at the time of film formation, the target temperature of the exhaust part, for example, the target temperature of the inner wall of the exhaust pipe 3 is equal to or higher than the sublimation temperature of the reaction by-product by the exhaust part temperature control operation program 64 of the control part 6.
- the target temperature is set to the exhaust temperature controller 7 Is output to The exhaust gas temperature controller 7 performs PID control of the output of the exhaust gas heater 33 based on the target temperature.
- the film forming process is a process for forming a silicon nitride film by reacting dichlorosilane (SiH 2 C 12) and ammonia (NH 3 ). Therefore, the sublimation temperature of ammonium chloride (NH 4 C 1), which is a reaction by-product, is 150 ° C., and the target temperature is set to, for example, 200 ° C.
- the exhaust-port thermocouple 35 transmits the temperature of the exhaust pipe 3 to the exhaust-port temperature controller 7. c
- the exhaust-port temperature controller 33 is controlled based on a signal sent by the exhaust-port temperature controller 7.
- the first cooling means 100 does not normally operate during film formation.
- the Q-mass 36 transmits the exhaust gas component data at the time of film formation to the storage unit 63 periodically (in this embodiment, every 10 seconds).
- step S2 a predetermined number of wafers, which are substrates on which a film is to be formed, are transferred and held on a wafer boat 12 and the reaction tube is raised by raising the boat elevator 17. It is carried into the reaction vessel formed by 1 and manifold 11. The lower end opening (furnace opening) of the manifold 11 is closed by the lid 13.
- the main valve 32 is opened, and the inside of the reaction vessel is evacuated by the vacuum pump 31.
- the pressure inside the reaction vessel reaches a predetermined pressure, for example, about 0.1 Pa, the main valve 32 is closed, and it is confirmed whether the pressure inside the reaction vessel as a closed space has increased.
- a predetermined pressure for example, about 0.1 Pa
- the main valve 32 is closed, and it is confirmed whether the pressure inside the reaction vessel as a closed space has increased.
- the atmosphere will be entrained during the film formation. In this case, a desired silicon nitride film cannot be obtained.
- the temperature of the inside of the reaction vessel is raised to a predetermined process temperature, for example, a temperature selected from a range of about 500 ° C. to 800 ° C. by the heating 2.
- the processing gas is introduced from the processing gas supply pipe.
- Processing gas supply pipes are always prepared according to the type of processing gas to be introduced.
- dichlorosilane and ammonia are generally used.
- these gases are supplied into the reaction vessel from the processing gas supply pipes 21 and 22, respectively, and the film is formed for a predetermined time.
- ammonium chloride a reaction by-product, is generated and flows into the exhaust gas.
- the temperature in the exhaust pipe 3 is higher than the sublimation temperature of ammonium chloride. Since it is heated to a temperature of, the ammonium chloride is exhausted without adhering to the exhaust pipe 3 and captured by a trap (not shown).
- the residual gas remaining in the reaction vessel is purged using, for example, N 2 gas flowing through a gas supply pipe (not shown). Thereafter, the boat elevator 17 is lowered and the wafer boat 12 is carried out.
- the silicon nitride film may adhere and deposit on portions exposed to the internal atmosphere of the reaction vessel, such as the wafer boat 12, the inner wall of the outer tube lb, and the inner tube la.
- the thickness of this silicon nitride film is increased.
- Such silicon nitride film may cause problems with correct configuration evening mineralocorticoid one Chillon and dust, thus c leads to quality deterioration of the products, such as film forming plaques and conductive inhibit or insulation failure (device), deterioration of the quality of such devices To prevent this, it is necessary to periodically clean the LP-CVD equipment for nitride films.
- the apparatus control unit 5 determines whether it is time to perform cleaning, for example, whether the cumulative thickness of the silicon nitride film has reached a set value. If the set value has been reached, for example, a cleaning recipe is automatically selected and cleaning is started. Alternatively, a message indicating that cleaning has been performed is displayed on the operation screen of the apparatus. Alternatively, an alarm is generated, and cleaning is prompted immediately after the operation.
- step S4 for example, when a cleaning recipe is selected by the device control unit 5 and the operation according to the cleaning recipe starts, the cleaning start time is transmitted from the device control unit 5 to the control unit 6, and the storage unit is stored. 63 is stored (step S5). Then, the control unit 6 acts as the exhaust temperature control operation determination unit and performs the cleaning execution time (when the cleaning gas is changed) based on the cleaning start time (the time when the above-described cleaning recipe is selected) according to the exhaust temperature control operation determination program 64.
- Step S 6 The time of introduction
- Step S 7 The target temperature of the inner wall of the exhaust pipe 3, which is an exhaust part
- the target temperature after the change is transmitted from the control unit 6 to the exhaust unit temperature controller 7. Specifically, a target temperature corresponding to the cleaning is read from the table 66 and transmitted to the exhaust temperature controller 7.
- a cooling operation instruction is transmitted from the control unit 6 to the exhaust unit temperature controller 7 so that the temperature of the inner wall of the exhaust pipe 3 serving as the exhaust unit decreases to the target temperature.
- the exhaust-portion temperature controller 7 issues an instruction to cool and flow the cooling water to, for example, the channel unit 42 so that the first cooling means 100 performs the cooling operation (step S8).
- the cleaning execution time is estimated based on the program 64
- the exhaust gas is exhausted based on the temperature of the inner wall of the exhaust pipe 3, the target temperature, and the cooling state (coolant temperature, flow rate, etc.) at that time.
- the second cooling means 200 is used in addition to the first cooling means 100.
- an instruction to increase the flow rate of the refrigerant is given to the chiller unit 42.
- the first cooling means 100 When receiving the cooling operation instruction, the first cooling means 100 starts the cooling operation. That is, the cooling water flows through the cooling pipe 41 to forcibly cool the exhaust pipe 3.
- the control unit 6 When the temperature detected by the exhaust-portion thermocouple 35 drops to, for example, a temperature near the target temperature, the control unit 6 outputs a cooling operation stop instruction to the exhaust-portion temperature controller 7 (step S9). Thereby, the cooling operation by the first cooling means 100, for example, the flow of the cooling water, is stopped.
- a cooling instruction is given to the second cooling means 200 in addition to the first cooling means 100, and the cooling gas is supplied from the cooling gas line 43 into the exhaust pipe 3. You may make it.
- Step S10 the temperature in the reaction vessel is raised to a cleaning temperature, for example, 300 °, by the first heating 2.
- a cleaning gas dry etching gas
- a fluorine gas and a hydrogen fluoride gas for example, a fluorine gas and a hydrogen fluoride gas
- the Q-mass 36 monitors the concentration of a component serving as an index indicating the degree of corrosion of the exhaust pipe 3 in the gas flowing through the exhaust pipe 3.
- the concentration of CrF 2 which is a reaction product of stainless steel as the material of the exhaust pipe 3 and the cleaning gas, is detected as an ion current corresponding to CrF 2 .
- This detected value is stored in the storage unit 63 of the control unit 6 periodically, for example, at intervals of 10 seconds (step S11).
- step S13 If the concentration of CrF 2 is equal to or less than the preset concentration, it is determined whether or not a cleaning end signal has been output (step S13). If not, steps S11 and S12 are repeated. If the cleaning end signal has been output, the apparatus control section 5 closes the valve V3 provided in the cleaning gas supply pipe 23 to end the cleaning (step S14).
- step S12 determines whether the concentration of CrF 2 exceeds the preset concentration.
- the exhaust temperature control operation determination program 64 sends the target temperature controller 7 to the exhaust temperature controller 7. Is given by a predetermined temperature, for example, 5 ° C., that is, a target temperature lower by 5 ° C. is output (step S15).
- the exhaust temperature controller 7 is newly provided as the first cooling means 100.
- a cooling operation instruction is transmitted (step S16).
- the operation of the first cooling means 100 is corrected, the temperature of the exhaust pipe 3 is further reduced. Thereby, the reaction in the exhaust pipe 3 can be suppressed.
- the target temperature of each heating section is lowered by 5 ° C. Be changed.
- step S16 it is determined in step S17 whether a cleaning end signal has been output. If the cleaning end signal has been output, the process proceeds to step S14 to end the cleaning. If the cleaning end signal has not been output, for example, it is determined whether or not a predetermined time has elapsed since step S15 in which the instruction to lower the target temperature by 5 ° C. was issued (step S18).
- step S19 it is determined again in step S19 whether or not the concentration of CrF 2 is lower than a preset concentration.
- the concentration of CrF 2 is equal to or less than the preset concentration, the process proceeds to step S13. If the concentration of CrF 2 is still higher than the preset concentration, the exhaust temperature control operation determination program 64 of the control unit 6 repeats the operation of further reducing the exhaust target temperature by a predetermined temperature, for example, 5 ° C.
- step S19 it is determined whether or not the exhaust-portion target temperature has dropped to a predetermined lower limit temperature (step S20). If the temperature has not been lowered to the predetermined lower limit temperature, the process returns to step S15, and the target temperature is lowered, for example, by 5 ° C. If the temperature has been lowered to the predetermined lower limit temperature, the cleaning is stopped in step S21.
- a preset lower limit temperature for example, a temperature 10 ° C higher than the temperature of the cooling fluid of the first cooling means 100, if the concentration of CrF 2 is lower than the set value.
- the cleaning is stopped by the exhaust temperature control operation determination program 64 transmitting a cleaning abort instruction to the device control unit 5 and a cooling stop instruction to the first cooling unit 100, respectively.
- the device controller 5 receives the cleaning abort instruction.
- the valve V3 of the cleaning gas supply pipe 23 is immediately closed to terminate the cleaning.
- the first cooling means 100 receives the cooling stop instruction, it immediately stops the cooling operation.
- the cleaning gas in the reaction vessel is replaced with, for example, a gas introduced through a gas supply pipe (not shown), for example, N 2 gas.
- the exhaust-portion temperature control operation program 64 changes the exhaust-portion target temperature to be equal to or higher than the sublimation temperature of the reaction by-product (Step S22).
- the exhaust target temperature after the change is output to the exhaust temperature controller 7.
- Fig. 5 shows the relationship between the target temperature of the exhaust section and the film forming process and the cleaning process.
- the target temperature of the exhaust unit is set to be equal to or higher than the sublimation temperature of the reaction by-product, so that the exhaust unit (specifically, the inner wall of the exhaust pipe 3 which is an exhaust passage member) is provided. While it is possible to prevent reaction by-products from adhering, at the time of cleaning, the target temperature is lowered to an appropriate temperature at which corrosion due to the stainless steel cleaning gas constituting the exhaust part is sufficiently suppressed. The service life of the is prolonged. In addition, by suppressing corrosion of the metal part, metal contamination on the wafer can be prevented.
- the temperature of the exhaust unit is decreased to a temperature suitable for cleaning by forcibly cooling the exhaust pipe 3 with a cooling fluid. It can be performed promptly, and therefore can quickly move to the cleaning process.
- the state of the reaction between the stainless steel member forming the exhaust part and the cleaning gas is monitored by the concentration of a predetermined component, for example, CrF 2 , in the gas flowing through the exhaust pipe 3, and the state of the reaction is monitored. Since the temperature of the exhaust pipe 3 is lowered when the concentration exceeds a predetermined concentration, it is possible to reliably suppress corrosion of the stainless steel member constituting the exhaust part. With such a configuration, even when stainless steel members such as the manifold 11 as well as the exhaust portion are corroded, it is possible to quickly detect the corrosion.
- a predetermined component for example, CrF 2
- Q_mass is used as a reaction detecting means for detecting a reaction state between the inner wall of the exhaust pipe 3 and the cleaning gas.
- the change in the output of the exhaust section H-33 causes the reaction state Can also be predicted.
- the storage unit 63 periodically stores, for example, 1 It is necessary to transmit the output of the exhaust port 33 every 0 seconds, and a program for monitoring the output of the exhaust port 33 and estimating the presence or absence of the reaction is required.
- a mixed gas of a fluorine gas and a hydrogen fluoride gas is used as the cleaning gas.
- the present invention is an effective technique when such a highly corrosive fluorine gas is used.
- the present invention is not limited to the case where such a gas is used as the cleaning gas, but is also applicable to the case where cleaning is performed using another gas.
- the present invention is not limited to such configurations.
- corrosion of the stainless steel member of the exhaust part due to the cleaning gas is suppressed, but the stainless steel used for the lid 13 or the manifold 11 for closing the furnace chamber of the LP-CVD apparatus is used.
- the present invention may be applied to suppress corrosion of members.
- the target temperatures of these members are described in the table 66 in addition to the exhaust-portion target temperatures for each process.
- control unit 6 serving as the management control unit is configured by a computer different from the device control unit 5.
- the device control unit 5 may also serve as the management control unit. In this case, the target temperature of the exhaust unit and the like is changed by the device control unit 5.
- the present invention has been described by taking LP-CVD for generating a silicon nitride film as an example, but the present invention is also applicable to, for example, plasma CVD for generating a silicon nitride film and aluminum etching.
- the present invention can be applied to an apparatus in which a member such as an exhaust portion needs to be heated in order to prevent adhesion of a reaction by-product, while the member is exposed to corrosive gas during cleaning.
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- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
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Abstract
Description
Claims
Priority Applications (2)
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JP2005504849A JP4043488B2 (ja) | 2003-02-04 | 2004-02-04 | 処理システム及び処理システムの稼動方法 |
US11/196,398 US20050284575A1 (en) | 2003-02-04 | 2005-08-04 | Processing system and operating method of processing system |
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JP2003-027546 | 2003-02-04 | ||
JP2003027546 | 2003-02-04 |
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US11/196,398 Continuation US20050284575A1 (en) | 2003-02-04 | 2005-08-04 | Processing system and operating method of processing system |
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WO2004070802A1 true WO2004070802A1 (ja) | 2004-08-19 |
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PCT/JP2004/001110 WO2004070802A1 (ja) | 2003-02-04 | 2004-02-04 | 処理システム及び処理システムの稼働方法 |
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US (1) | US20050284575A1 (ja) |
JP (1) | JP4043488B2 (ja) |
KR (1) | KR100680863B1 (ja) |
WO (1) | WO2004070802A1 (ja) |
Cited By (12)
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JP2007084908A (ja) * | 2005-09-26 | 2007-04-05 | Tokyo Electron Ltd | 基板処理方法および記録媒体 |
JP2008227013A (ja) * | 2007-03-09 | 2008-09-25 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2008303452A (ja) * | 2007-06-11 | 2008-12-18 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2011146542A (ja) * | 2010-01-14 | 2011-07-28 | Tokyo Electron Ltd | 熱処理装置、熱処理方法及び記憶媒体 |
JP2012054541A (ja) * | 2010-08-05 | 2012-03-15 | Ebara Corp | 排気系システム |
JP2013525601A (ja) * | 2010-04-16 | 2013-06-20 | フラウンホーファー−ゲゼルシャフト ツル フェルデルング デル アンゲヴァンテン フォルシュング エー ファウ | プラズマ化学蒸着によって真空チャンバ内で基板を被覆する装置 |
JP2016012701A (ja) * | 2014-06-30 | 2016-01-21 | 株式会社日立国際電気 | クリーニング方法、半導体装置の製造方法、基板処理装置およびプログラム |
JP2018026460A (ja) * | 2016-08-10 | 2018-02-15 | 株式会社日立国際電気 | クリーニング方法、半導体装置の製造方法、基板処理装置、及びプログラム |
JP2020028851A (ja) * | 2018-08-22 | 2020-02-27 | キオクシア株式会社 | ファンスクラバおよびファンスクラバの制御方法 |
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JP2023035497A (ja) * | 2021-09-01 | 2023-03-13 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、プログラム及び基板処理方法 |
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US20070209683A1 (en) * | 2006-03-13 | 2007-09-13 | Macronix International Co., Ltd. | Method for cleaning reactor and method for manufacturing a chip thereof |
JP2009123795A (ja) * | 2007-11-13 | 2009-06-04 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
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JP2010080850A (ja) | 2008-09-29 | 2010-04-08 | Toshiba Corp | 半導体製造装置及びそのクリーニング方法 |
JP6391171B2 (ja) * | 2015-09-07 | 2018-09-19 | 東芝メモリ株式会社 | 半導体製造システムおよびその運転方法 |
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- 2004-02-04 KR KR1020057014229A patent/KR100680863B1/ko active IP Right Grant
- 2004-02-04 JP JP2005504849A patent/JP4043488B2/ja not_active Expired - Lifetime
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- 2005-08-04 US US11/196,398 patent/US20050284575A1/en not_active Abandoned
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JP2007084908A (ja) * | 2005-09-26 | 2007-04-05 | Tokyo Electron Ltd | 基板処理方法および記録媒体 |
JP2008227013A (ja) * | 2007-03-09 | 2008-09-25 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2008303452A (ja) * | 2007-06-11 | 2008-12-18 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2011146542A (ja) * | 2010-01-14 | 2011-07-28 | Tokyo Electron Ltd | 熱処理装置、熱処理方法及び記憶媒体 |
JP2013525601A (ja) * | 2010-04-16 | 2013-06-20 | フラウンホーファー−ゲゼルシャフト ツル フェルデルング デル アンゲヴァンテン フォルシュング エー ファウ | プラズマ化学蒸着によって真空チャンバ内で基板を被覆する装置 |
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JP2016012701A (ja) * | 2014-06-30 | 2016-01-21 | 株式会社日立国際電気 | クリーニング方法、半導体装置の製造方法、基板処理装置およびプログラム |
US9340872B2 (en) | 2014-06-30 | 2016-05-17 | Hitachi Kokusai Electric, Inc. | Cleaning method, manufacturing method of semiconductor device, substrate processing apparatus, and recording medium |
JP2018026460A (ja) * | 2016-08-10 | 2018-02-15 | 株式会社日立国際電気 | クリーニング方法、半導体装置の製造方法、基板処理装置、及びプログラム |
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JP2020028851A (ja) * | 2018-08-22 | 2020-02-27 | キオクシア株式会社 | ファンスクラバおよびファンスクラバの制御方法 |
JP7068101B2 (ja) | 2018-08-22 | 2022-05-16 | キオクシア株式会社 | ファンスクラバおよびファンスクラバの制御方法 |
JP2023035497A (ja) * | 2021-09-01 | 2023-03-13 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、プログラム及び基板処理方法 |
JP7317083B2 (ja) | 2021-09-01 | 2023-07-28 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、プログラム及び基板処理方法 |
US11942333B2 (en) | 2021-09-01 | 2024-03-26 | Kokusai Electric Corporation | Method of manufacturing semiconductor device, cleaning method, and non-transitory computer-readable recording medium |
US20230366081A1 (en) * | 2022-05-11 | 2023-11-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor processing tool and methods of operation |
Also Published As
Publication number | Publication date |
---|---|
KR100680863B1 (ko) | 2007-02-09 |
US20050284575A1 (en) | 2005-12-29 |
JPWO2004070802A1 (ja) | 2006-05-25 |
JP4043488B2 (ja) | 2008-02-06 |
KR20050097969A (ko) | 2005-10-10 |
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