CN1290194C - 电容元件、半导体存储器及其制备方法 - Google Patents
电容元件、半导体存储器及其制备方法 Download PDFInfo
- Publication number
- CN1290194C CN1290194C CN02124394.8A CN02124394A CN1290194C CN 1290194 C CN1290194 C CN 1290194C CN 02124394 A CN02124394 A CN 02124394A CN 1290194 C CN1290194 C CN 1290194C
- Authority
- CN
- China
- Prior art keywords
- barrier layer
- film
- insulating properties
- lower electrode
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001191524 | 2001-06-25 | ||
JP2001191524 | 2001-06-25 | ||
JP2001-191524 | 2001-06-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1393931A CN1393931A (zh) | 2003-01-29 |
CN1290194C true CN1290194C (zh) | 2006-12-13 |
Family
ID=19030134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN02124394.8A Expired - Fee Related CN1290194C (zh) | 2001-06-25 | 2002-06-21 | 电容元件、半导体存储器及其制备方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6730951B2 (fr) |
EP (2) | EP2172964A3 (fr) |
CN (1) | CN1290194C (fr) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AR028948A1 (es) * | 2000-06-20 | 2003-05-28 | Astrazeneca Ab | Compuestos novedosos |
JP3931113B2 (ja) * | 2002-06-10 | 2007-06-13 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
JP3836052B2 (ja) * | 2002-06-25 | 2006-10-18 | 沖電気工業株式会社 | 半導体素子及びその製造方法 |
KR100536590B1 (ko) * | 2002-09-11 | 2005-12-14 | 삼성전자주식회사 | 강유전체 커패시터 및 그 제조 방법 |
TWI229935B (en) * | 2002-11-13 | 2005-03-21 | Matsushita Electric Ind Co Ltd | Semiconductor device and method for fabricating the same |
US6746877B1 (en) * | 2003-01-07 | 2004-06-08 | Infineon Ag | Encapsulation of ferroelectric capacitors |
US7042705B2 (en) * | 2003-01-30 | 2006-05-09 | Infineon Technologies Ag | Sidewall structure and method of fabrication for reducing oxygen diffusion to contact plugs during CW hole reactive ion etch processing |
US6933549B2 (en) * | 2003-02-28 | 2005-08-23 | Infineon Technologies Aktiengesellschaft | Barrier material |
JP2004281965A (ja) * | 2003-03-19 | 2004-10-07 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2004281956A (ja) * | 2003-03-19 | 2004-10-07 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US7642583B2 (en) * | 2003-04-25 | 2010-01-05 | Panasonic Corporation | Ferroelectric memory device |
CN100470806C (zh) * | 2003-05-27 | 2009-03-18 | 松下电器产业株式会社 | 半导体器件的制造方法 |
JP2004356464A (ja) * | 2003-05-30 | 2004-12-16 | Oki Electric Ind Co Ltd | 強誘電体素子の製造方法、強誘電体素子及びFeRAM |
JP4313628B2 (ja) * | 2003-08-18 | 2009-08-12 | パナソニック株式会社 | 半導体レーザおよびその製造方法 |
CN100377357C (zh) * | 2003-10-22 | 2008-03-26 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
KR100818267B1 (ko) * | 2003-10-27 | 2008-03-31 | 삼성전자주식회사 | 커패시터, 이를 구비한 반도체 소자 및 그 제조 방법 |
JP3810411B2 (ja) * | 2004-01-23 | 2006-08-16 | Necエレクトロニクス株式会社 | 集積回路装置 |
US6982448B2 (en) * | 2004-03-18 | 2006-01-03 | Texas Instruments Incorporated | Ferroelectric capacitor hydrogen barriers and methods for fabricating the same |
JP4800627B2 (ja) * | 2004-03-24 | 2011-10-26 | セイコーエプソン株式会社 | 強誘電体メモリ素子 |
JP4105656B2 (ja) * | 2004-05-13 | 2008-06-25 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2006005234A (ja) * | 2004-06-18 | 2006-01-05 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置 |
JP4042730B2 (ja) * | 2004-09-02 | 2008-02-06 | セイコーエプソン株式会社 | 強誘電体メモリおよびその製造方法 |
JP4375561B2 (ja) * | 2004-12-28 | 2009-12-02 | セイコーエプソン株式会社 | 半導体記憶装置及びその製造方法 |
JP2006203129A (ja) * | 2005-01-24 | 2006-08-03 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US7118959B2 (en) * | 2005-03-10 | 2006-10-10 | Texas Instruments Incorporated | Integrated circuit capacitor having antireflective dielectric |
JP4637733B2 (ja) * | 2005-11-30 | 2011-02-23 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
JP2007234743A (ja) * | 2006-02-28 | 2007-09-13 | Seiko Epson Corp | 半導体記憶装置および半導体記憶装置の製造方法 |
WO2007102483A1 (fr) * | 2006-03-08 | 2007-09-13 | Matsushita Electric Industrial Co., Ltd. | Element et dispositif de stockage non volatile et leur procede de fabrication |
JP4137994B2 (ja) * | 2006-11-20 | 2008-08-20 | 松下電器産業株式会社 | 不揮発性記憶素子、不揮発性記憶素子アレイおよびその製造方法 |
KR102184355B1 (ko) * | 2014-09-16 | 2020-11-30 | 삼성전자주식회사 | 반도체 소자 |
US10615176B2 (en) | 2017-11-22 | 2020-04-07 | International Business Machine Corporation | Ferro-electric complementary FET |
JP2022527654A (ja) * | 2019-04-08 | 2022-06-02 | ケプラー コンピューティング インコーポレイテッド | ドープされた極性層及びそれを組み込んだ半導体デバイス |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH118355A (ja) | 1997-06-16 | 1999-01-12 | Nec Corp | 強誘電体メモリ |
KR100269306B1 (ko) * | 1997-07-31 | 2000-10-16 | 윤종용 | 저온처리로안정화되는금속산화막으로구성된완충막을구비하는집적회로장치및그제조방법 |
JP3090198B2 (ja) * | 1997-08-21 | 2000-09-18 | 日本電気株式会社 | 半導体装置の構造およびその製造方法 |
JPH11126881A (ja) | 1997-10-23 | 1999-05-11 | Hitachi Ltd | 高強誘電体薄膜コンデンサを有する半導体装置及びその製造方法 |
JP3542704B2 (ja) * | 1997-10-24 | 2004-07-14 | シャープ株式会社 | 半導体メモリ素子 |
JP3212930B2 (ja) * | 1997-11-26 | 2001-09-25 | 日本電気株式会社 | 容量及びその製造方法 |
KR100436058B1 (ko) | 1997-12-27 | 2004-12-17 | 주식회사 하이닉스반도체 | 강유전체 캐패시터 형성 방법 |
KR100292819B1 (ko) * | 1998-07-07 | 2001-09-17 | 윤종용 | 커패시터및그의제조방법 |
US6509601B1 (en) * | 1998-07-31 | 2003-01-21 | Samsung Electronics Co., Ltd. | Semiconductor memory device having capacitor protection layer and method for manufacturing the same |
US6249014B1 (en) * | 1998-10-01 | 2001-06-19 | Ramtron International Corporation | Hydrogen barrier encapsulation techniques for the control of hydrogen induced degradation of ferroelectric capacitors in conjunction with multilevel metal processing for non-volatile integrated circuit memory devices |
US6225656B1 (en) * | 1998-12-01 | 2001-05-01 | Symetrix Corporation | Ferroelectric integrated circuit with protective layer incorporating oxygen and method for fabricating same |
JP3495955B2 (ja) * | 1999-03-26 | 2004-02-09 | シャープ株式会社 | 半導体メモリ装置及びその製造方法 |
TW454330B (en) | 1999-05-26 | 2001-09-11 | Matsushita Electronics Corp | Semiconductor apparatus and its manufacturing method |
DE10000005C1 (de) * | 2000-01-03 | 2001-09-13 | Infineon Technologies Ag | Verfahren zur Herstellung eines ferroelektrischen Halbleiterspeichers |
KR100500938B1 (ko) * | 2000-12-30 | 2005-07-14 | 주식회사 하이닉스반도체 | 캐패시터 제조 방법 |
KR100406536B1 (ko) * | 2001-03-28 | 2003-11-20 | 주식회사 하이닉스반도체 | 산소확산방지막으로서 알루미늄 산화막을 구비하는강유전체 메모리 소자 및 그 제조 방법 |
-
2002
- 2002-06-21 US US10/175,804 patent/US6730951B2/en not_active Expired - Lifetime
- 2002-06-21 CN CN02124394.8A patent/CN1290194C/zh not_active Expired - Fee Related
- 2002-06-24 EP EP10000358A patent/EP2172964A3/fr not_active Withdrawn
- 2002-06-24 EP EP02014103A patent/EP1271624A3/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
CN1393931A (zh) | 2003-01-29 |
EP1271624A2 (fr) | 2003-01-02 |
US20020195633A1 (en) | 2002-12-26 |
US6730951B2 (en) | 2004-05-04 |
EP2172964A3 (fr) | 2010-05-19 |
EP2172964A2 (fr) | 2010-04-07 |
EP1271624A3 (fr) | 2007-09-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20061213 Termination date: 20110621 |