CN1278429C - 晶体管、集成电路、电光装置、电子设备及其制造方法 - Google Patents

晶体管、集成电路、电光装置、电子设备及其制造方法 Download PDF

Info

Publication number
CN1278429C
CN1278429C CNB2003101195206A CN200310119520A CN1278429C CN 1278429 C CN1278429 C CN 1278429C CN B2003101195206 A CNB2003101195206 A CN B2003101195206A CN 200310119520 A CN200310119520 A CN 200310119520A CN 1278429 C CN1278429 C CN 1278429C
Authority
CN
China
Prior art keywords
insulating film
film
semiconductor film
silicon fiml
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2003101195206A
Other languages
English (en)
Chinese (zh)
Other versions
CN1505172A (zh
Inventor
汤田坂一夫
古沢昌宏
青木敬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of CN1505172A publication Critical patent/CN1505172A/zh
Application granted granted Critical
Publication of CN1278429C publication Critical patent/CN1278429C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6725—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having supplementary regions or layers for improving the flatness of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
CNB2003101195206A 2002-12-03 2003-12-01 晶体管、集成电路、电光装置、电子设备及其制造方法 Expired - Fee Related CN1278429C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002351112 2002-12-03
JP2002351112A JP4356309B2 (ja) 2002-12-03 2002-12-03 トランジスタ、集積回路、電気光学装置、電子機器

Publications (2)

Publication Number Publication Date
CN1505172A CN1505172A (zh) 2004-06-16
CN1278429C true CN1278429C (zh) 2006-10-04

Family

ID=32753117

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2003101195206A Expired - Fee Related CN1278429C (zh) 2002-12-03 2003-12-01 晶体管、集成电路、电光装置、电子设备及其制造方法

Country Status (5)

Country Link
US (1) US7084428B2 (enExample)
JP (1) JP4356309B2 (enExample)
KR (1) KR100594835B1 (enExample)
CN (1) CN1278429C (enExample)
TW (1) TWI238531B (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7439086B2 (en) * 2003-11-14 2008-10-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing liquid crystal display device
WO2005048222A1 (en) * 2003-11-14 2005-05-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting display device, method for manufacturing the same, and tv set
JP2005259848A (ja) * 2004-03-10 2005-09-22 Toshiba Corp 半導体装置及びその製造方法
KR100611886B1 (ko) * 2004-06-25 2006-08-11 삼성에스디아이 주식회사 개량된 구조의 트랜지스터를 구비한 화소 회로 및 유기발광 표시장치
KR101186966B1 (ko) * 2004-11-09 2012-10-02 코닌클리케 필립스 일렉트로닉스 엔.브이. 유기 트랜지스터를 제조하기 위한 자체-정렬 공정
JP4865999B2 (ja) * 2004-11-19 2012-02-01 株式会社日立製作所 電界効果トランジスタの作製方法
JP2006195142A (ja) * 2005-01-13 2006-07-27 Future Vision:Kk 配線パターンを有する基板及びそれを用いた液晶表示装置
JP4455517B2 (ja) 2005-03-04 2010-04-21 三星モバイルディスプレイ株式會社 薄膜トランジスタの製造方法
KR100647695B1 (ko) * 2005-05-27 2006-11-23 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 그의 제조방법과 이를 구비한평판표시장치
KR101209046B1 (ko) * 2005-07-27 2012-12-06 삼성디스플레이 주식회사 박막트랜지스터 기판과 박막트랜지스터 기판의 제조방법
JP4506605B2 (ja) 2005-07-28 2010-07-21 ソニー株式会社 半導体装置の製造方法
KR101240656B1 (ko) 2005-08-01 2013-03-08 삼성디스플레이 주식회사 평판표시장치와 평판표시장치의 제조방법
JP5259977B2 (ja) * 2006-04-28 2013-08-07 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US7608892B2 (en) * 2006-04-28 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP5500771B2 (ja) * 2006-12-05 2014-05-21 株式会社半導体エネルギー研究所 半導体装置及びマイクロプロセッサ
JP5325465B2 (ja) * 2008-06-03 2013-10-23 株式会社日立製作所 薄膜トランジスタおよびそれを用いた装置
CN102687275B (zh) * 2010-02-05 2016-01-27 株式会社半导体能源研究所 半导体装置
KR20180020327A (ko) 2010-03-08 2018-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치를 제작하는 방법
JP5567886B2 (ja) * 2010-04-09 2014-08-06 株式会社半導体エネルギー研究所 半導体装置
US8207025B2 (en) * 2010-04-09 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR101809661B1 (ko) * 2011-06-03 2017-12-18 삼성디스플레이 주식회사 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 유기 발광 표시 장치
CN103000692A (zh) * 2011-09-14 2013-03-27 鸿富锦精密工业（深圳）有限公司 薄膜晶体管结构及其制造方法
US8952379B2 (en) * 2011-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013039126A1 (en) 2011-09-16 2013-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013042562A1 (en) * 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102089505B1 (ko) * 2011-09-23 2020-03-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2013047629A1 (en) 2011-09-29 2013-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5806905B2 (ja) * 2011-09-30 2015-11-10 株式会社半導体エネルギー研究所 半導体装置
JP5912394B2 (ja) * 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 半導体装置
US8637864B2 (en) * 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
KR20130040706A (ko) * 2011-10-14 2013-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
IN2014DN03274A (enExample) 2011-10-14 2015-05-22 Semiconductor Energy Lab
KR20130055521A (ko) * 2011-11-18 2013-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자, 및 반도체 소자의 제작 방법, 및 반도체 소자를 포함하는 반도체 장치
KR102103913B1 (ko) * 2012-01-10 2020-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US9768254B2 (en) * 2015-07-30 2017-09-19 International Business Machines Corporation Leakage-free implantation-free ETSOI transistors
KR20200069446A (ko) * 2018-12-06 2020-06-17 삼성디스플레이 주식회사 박막트랜지스터와 그것을 구비한 디스플레이 장치 및 그들의 제조방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104439A (ja) 1992-09-18 1994-04-15 Fujitsu Ltd 薄膜トランジスタおよびその製造方法
US6683350B1 (en) * 1993-02-05 2004-01-27 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same
JPH086025A (ja) * 1994-04-20 1996-01-12 Sharp Corp 液晶電気光学装置、それを用いた投射型表示システムおよび液晶電気光学装置の駆動方法
JPH1032337A (ja) 1996-07-12 1998-02-03 Seiko Epson Corp 薄膜トランジスタとそれを用いた半導体集積回路および液晶表示装置ならびに薄膜トランジスタの製造方法
KR100295687B1 (ko) 1999-05-25 2001-07-12 김영환 모스 트랜지스터 제조방법
GB9919536D0 (en) * 1999-08-19 1999-10-20 Koninkl Philips Electronics Nv Active matrix electroluminescent display device
US6420218B1 (en) * 2000-04-24 2002-07-16 Advanced Micro Devices, Inc. Ultra-thin-body SOI MOS transistors having recessed source and drain regions
CN1423841A (zh) * 2000-12-21 2003-06-11 皇家菲利浦电子有限公司 薄膜晶体管
US6870225B2 (en) * 2001-11-02 2005-03-22 International Business Machines Corporation Transistor structure with thick recessed source/drain structures and fabrication process of same
US20030227014A1 (en) * 2002-06-11 2003-12-11 Xerox Corporation. Process for forming semiconductor layer of micro-and nano-electronic devices
US6890868B2 (en) * 2002-10-17 2005-05-10 Xerox Corporation Process for depositing gelable composition that includes dissolving gelable composition in liquid with agitating to disrupt gelling

Also Published As

Publication number Publication date
JP4356309B2 (ja) 2009-11-04
TWI238531B (en) 2005-08-21
TW200425520A (en) 2004-11-16
US7084428B2 (en) 2006-08-01
CN1505172A (zh) 2004-06-16
KR20040048829A (ko) 2004-06-10
KR100594835B1 (ko) 2006-06-30
US20050029591A1 (en) 2005-02-10
JP2004186393A (ja) 2004-07-02

Similar Documents

Publication Publication Date Title
CN1278429C (zh) 晶体管、集成电路、电光装置、电子设备及其制造方法
JP3725169B2 (ja) 塗布膜を有する薄膜デバイスの製造方法
CN1165988C (zh) 半导体器件
CN1755943B (zh) 具有半导体元件的显示器件及其制造方法
US8541785B2 (en) Display device
KR100614074B1 (ko) 박막 디바이스의 제조 방법 및 트랜지스터의 제조 방법
CN1359139A (zh) 半导体器件及其制造方法
US20080191279A1 (en) Thin film transistor, electronic device having the same, and method for manufacturing the same
CN1398007A (zh) 有机半导体器件及其制造工艺
JP2006041457A (ja) 薄膜トランジスター構造及び製作方法
JP2003318193A (ja) デバイス、その製造方法及び電子装置
CN1765009A (zh) 半导体装置及其制造方法
CN1877448A (zh) 蚀刻剂及使用蚀刻剂制造布线及薄膜晶体管基板的方法
CN1897270A (zh) 布线结构、制造布线的方法、薄膜晶体管基板及其制造方法
CN101051671A (zh) 晶体管、像素电极基板、电光装置、电子装置和半导体元件的制造方法
CN101236973B (zh) 半导体装置以及其制造方法
CN1310339C (zh) 薄膜晶体管及其生产方法
CN1536620A (zh) 低温多晶硅薄膜晶体管及其多晶硅层的制造方法
CN1441501A (zh) 薄膜晶体管及具有该薄膜晶体管之显示装置
CN115084198A (zh) 显示装置
CN1808221A (zh) 液晶显示屏板和液晶显示装置
CN1842745A (zh) 薄膜晶体管、薄膜晶体管的制造方法、以及显示器件的制造方法
CN1154488A (zh) 有非发光型显示器的电子装置
CN107481938B (zh) 显示面板、显示装置及低温多晶硅薄膜晶体管的制备方法
JP2004304022A (ja) トランジスタの製造方法、トランジスタ、トランジスタを用いた集積回路、電気光学装置及び電子機器

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20061004

Termination date: 20151201

EXPY Termination of patent right or utility model