JP4506605B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4506605B2 JP4506605B2 JP2005218224A JP2005218224A JP4506605B2 JP 4506605 B2 JP4506605 B2 JP 4506605B2 JP 2005218224 A JP2005218224 A JP 2005218224A JP 2005218224 A JP2005218224 A JP 2005218224A JP 4506605 B2 JP4506605 B2 JP 4506605B2
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- 239000004065 semiconductor Substances 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 239000000463 material Substances 0.000 claims description 104
- 238000000034 method Methods 0.000 claims description 98
- 238000000576 coating method Methods 0.000 claims description 73
- 239000000758 substrate Substances 0.000 claims description 73
- 239000011248 coating agent Substances 0.000 claims description 70
- 238000007639 printing Methods 0.000 claims description 37
- 238000004049 embossing Methods 0.000 claims description 17
- 239000007788 liquid Substances 0.000 claims description 15
- 238000003825 pressing Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 74
- 239000010408 film Substances 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 20
- 239000011347 resin Substances 0.000 description 17
- 229920005989 resin Polymers 0.000 description 17
- 239000010409 thin film Substances 0.000 description 14
- 238000007650 screen-printing Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000004033 plastic Substances 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- 230000002940 repellent Effects 0.000 description 3
- 239000005871 repellent Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000000813 microcontact printing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1258—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by using a substrate provided with a shape pattern, e.g. grooves, banks, resist pattern
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
- H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/821—Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
- H05K2203/013—Inkjet printing, e.g. for printing insulating material or resist
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
図1は、第1実施形態の製造方法を説明するための断面工程図である。また、図2はここで作製する薄膜トランジスタの平面図である。以下、図1の断面工程図に基づき、図2を参照しつつ、本発明をトップゲート型の薄膜トランジスタの作製に適用した第1実施形態を説明する。
図3は、第2実施形態の製造方法を説明するための断面工程図である。この図に示す第2実施形態の製造方法が第1実施形態と異なるところは、基板1’の構成と凹状パターン1a’の形成手順にあり、その後の工程は、第1実施形態と同様であることとする。
図4は、第3実施形態の製造方法を説明するための断面工程図である。以下、図4の断面工程図に基づき、本発明をトップゲート型の薄膜トランジスタの作製に適用した他の実施形態として第3実施形態を説明する。尚、ここで作製する薄膜トランジスタの平面図は、第1実施形態で用いた図2と同様である。
図5は、第4実施形態の製造方法を説明するための断面工程図である。また、図6はここで作製する薄膜トランジスタの平面図である。以下、図5の断面工程図に基づき、図6を参照しつつ、本発明をボトムゲート型の薄膜トランジスタの作製に適用した第4実施形態を説明する。
Claims (3)
- 凹凸形状を有するスタンパを押し圧するエンボス加工によって基板の表面に凹状パターンを形成する第1工程と、
前記凹状パターン内に、有機半導体材料からなる塗布系材料を印刷供給する第2工程と、
前記印刷供給された塗布系材料を固化させる第3工程とを含み、
前記第1工程の前に、前記基板上にゲート電極を形成する工程を行い、
前記第1工程では、前記ゲート電極の一部に重なるように前記凹状パターンを形成し、
前記第1工程と第2工程との間に、前記凹状パターンの内壁を覆う状態で前記基板上に絶縁膜を形成し、
前記第2工程では、前記絶縁膜で覆われた前記凹状パターン内に前記塗布系材料として活性層を構成する有機半導体材料を塗布供給する
半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記第2工程では、前記凹状パターン内に塗布ノズルから前記塗布系材料を滴下供給する
半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記第1工程と第2工程との間に、前記凹状パターンの外側における前記基板の表面部分に、前記塗布系材料に対する撥液性を選択的に付与する処理を行う
半導体装置の製造方法。
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005218224A JP4506605B2 (ja) | 2005-07-28 | 2005-07-28 | 半導体装置の製造方法 |
DE602006019670T DE602006019670D1 (de) | 2005-07-28 | 2006-06-28 | Halbleitervorrichtung und deren Herstellung |
EP06013356A EP1748502B1 (en) | 2005-07-28 | 2006-06-28 | Semiconductor device and process for producing same |
TW095123978A TW200707744A (en) | 2005-07-28 | 2006-06-30 | Semiconductor device and process for producing the same |
KR1020060063755A KR20070014971A (ko) | 2005-07-28 | 2006-07-07 | 반도체 장치의 제조 방법 및 반도체 장치 |
US11/458,573 US7718465B2 (en) | 2005-07-28 | 2006-07-19 | Semiconductor device and process for producing same |
CN2009101496338A CN101577312B (zh) | 2005-07-28 | 2006-07-28 | 半导体器件及其制造工艺 |
CNA2006101100197A CN1905131A (zh) | 2005-07-28 | 2006-07-28 | 半导体器件及其制造工艺 |
US12/372,452 US20090152540A1 (en) | 2005-07-28 | 2009-02-17 | Semiconductor device and process for producing same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005218224A JP4506605B2 (ja) | 2005-07-28 | 2005-07-28 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007035981A JP2007035981A (ja) | 2007-02-08 |
JP4506605B2 true JP4506605B2 (ja) | 2010-07-21 |
Family
ID=36940212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005218224A Expired - Fee Related JP4506605B2 (ja) | 2005-07-28 | 2005-07-28 | 半導体装置の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7718465B2 (ja) |
EP (1) | EP1748502B1 (ja) |
JP (1) | JP4506605B2 (ja) |
KR (1) | KR20070014971A (ja) |
CN (2) | CN101577312B (ja) |
DE (1) | DE602006019670D1 (ja) |
TW (1) | TW200707744A (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008075625A1 (ja) | 2006-12-18 | 2008-06-26 | Panasonic Corporation | 半導体デバイス |
JP2008251888A (ja) * | 2007-03-30 | 2008-10-16 | Sony Corp | パターン形成方法および電子素子の製造方法 |
US8057656B2 (en) * | 2008-01-30 | 2011-11-15 | Hewlett-Packard Development Company, Lp | Crossover |
JP5459570B2 (ja) * | 2008-02-05 | 2014-04-02 | セイコーエプソン株式会社 | 半導体装置の製造方法、電気光学装置の製造方法、および電子機器の製造方法 |
WO2009101862A1 (ja) | 2008-02-12 | 2009-08-20 | Konica Minolta Holdings, Inc. | 有機半導体層の成膜方法、および有機薄膜トランジスタの製造方法 |
WO2010061035A1 (en) * | 2008-11-27 | 2010-06-03 | Upm-Kymmene Corporation | Embossing of electronic thin-film components |
JP5739257B2 (ja) * | 2010-08-05 | 2015-06-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
CN103548115A (zh) * | 2011-05-20 | 2014-01-29 | 住友商事株式会社 | 图案构造体的制造方法 |
CN106876277B (zh) * | 2017-02-20 | 2020-03-17 | 武汉华星光电技术有限公司 | 薄膜晶体管的制备方法、显示面板的制备方法 |
CN109860207B (zh) * | 2019-02-27 | 2022-07-19 | 合肥鑫晟光电科技有限公司 | 一种阵列基板、其制作方法、显示面板及显示装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004158815A (ja) * | 2002-09-12 | 2004-06-03 | Seiko Epson Corp | 成膜方法、光学素子、半導体素子および電子機器、電気光学装置の製造方法、カラーフィルターの製造方法 |
JP2004186393A (ja) * | 2002-12-03 | 2004-07-02 | Seiko Epson Corp | トランジスタ、集積回路、電気光学装置、電子機器、並びにトランジスタの製造方法 |
JP2004241397A (ja) * | 2003-01-23 | 2004-08-26 | Dainippon Printing Co Ltd | 薄膜トランジスタおよびその製造方法 |
WO2004111729A1 (en) * | 2003-06-19 | 2004-12-23 | Avantone Oy | A method and an apparatus for manufacturing an electronic thin-film component and an electronic thin-film component |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6517995B1 (en) * | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
GB0024294D0 (en) * | 2000-10-04 | 2000-11-15 | Univ Cambridge Tech | Solid state embossing of polymer devices |
GB0207134D0 (en) * | 2002-03-27 | 2002-05-08 | Cambridge Display Tech Ltd | Method of preparation of organic optoelectronic and electronic devices and devices thereby obtained |
US6946677B2 (en) * | 2002-06-14 | 2005-09-20 | Nokia Corporation | Pre-patterned substrate for organic thin film transistor structures and circuits and related method for making same |
GB0229191D0 (en) * | 2002-12-14 | 2003-01-22 | Plastic Logic Ltd | Embossing of polymer devices |
GB0324189D0 (en) * | 2003-10-16 | 2003-11-19 | Univ Cambridge Tech | Short-channel transistors |
-
2005
- 2005-07-28 JP JP2005218224A patent/JP4506605B2/ja not_active Expired - Fee Related
-
2006
- 2006-06-28 DE DE602006019670T patent/DE602006019670D1/de active Active
- 2006-06-28 EP EP06013356A patent/EP1748502B1/en not_active Not-in-force
- 2006-06-30 TW TW095123978A patent/TW200707744A/zh not_active IP Right Cessation
- 2006-07-07 KR KR1020060063755A patent/KR20070014971A/ko active IP Right Grant
- 2006-07-19 US US11/458,573 patent/US7718465B2/en not_active Expired - Fee Related
- 2006-07-28 CN CN2009101496338A patent/CN101577312B/zh not_active Expired - Fee Related
- 2006-07-28 CN CNA2006101100197A patent/CN1905131A/zh active Pending
-
2009
- 2009-02-17 US US12/372,452 patent/US20090152540A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004158815A (ja) * | 2002-09-12 | 2004-06-03 | Seiko Epson Corp | 成膜方法、光学素子、半導体素子および電子機器、電気光学装置の製造方法、カラーフィルターの製造方法 |
JP2004186393A (ja) * | 2002-12-03 | 2004-07-02 | Seiko Epson Corp | トランジスタ、集積回路、電気光学装置、電子機器、並びにトランジスタの製造方法 |
JP2004241397A (ja) * | 2003-01-23 | 2004-08-26 | Dainippon Printing Co Ltd | 薄膜トランジスタおよびその製造方法 |
WO2004111729A1 (en) * | 2003-06-19 | 2004-12-23 | Avantone Oy | A method and an apparatus for manufacturing an electronic thin-film component and an electronic thin-film component |
Also Published As
Publication number | Publication date |
---|---|
EP1748502B1 (en) | 2011-01-19 |
JP2007035981A (ja) | 2007-02-08 |
US20090152540A1 (en) | 2009-06-18 |
CN1905131A (zh) | 2007-01-31 |
CN101577312A (zh) | 2009-11-11 |
US7718465B2 (en) | 2010-05-18 |
EP1748502A1 (en) | 2007-01-31 |
TWI364841B (ja) | 2012-05-21 |
CN101577312B (zh) | 2011-09-28 |
TW200707744A (en) | 2007-02-16 |
DE602006019670D1 (de) | 2011-03-03 |
KR20070014971A (ko) | 2007-02-01 |
US20070026554A1 (en) | 2007-02-01 |
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