CN1274013C - 半导体器件和设计掩模的方法 - Google Patents
半导体器件和设计掩模的方法 Download PDFInfo
- Publication number
- CN1274013C CN1274013C CNB008110158A CN00811015A CN1274013C CN 1274013 C CN1274013 C CN 1274013C CN B008110158 A CNB008110158 A CN B008110158A CN 00811015 A CN00811015 A CN 00811015A CN 1274013 C CN1274013 C CN 1274013C
- Authority
- CN
- China
- Prior art keywords
- feature
- features
- dummy features
- active
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/06—Planarisation of inorganic insulating materials
- H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/926—Dummy metallization
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/340,697 US6396158B1 (en) | 1999-06-29 | 1999-06-29 | Semiconductor device and a process for designing a mask |
| US09/340,697 | 1999-06-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1365516A CN1365516A (zh) | 2002-08-21 |
| CN1274013C true CN1274013C (zh) | 2006-09-06 |
Family
ID=23334550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB008110158A Expired - Lifetime CN1274013C (zh) | 1999-06-29 | 2000-05-24 | 半导体器件和设计掩模的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6396158B1 (https=) |
| EP (1) | EP1196948A2 (https=) |
| JP (2) | JP5249483B2 (https=) |
| KR (1) | KR100722177B1 (https=) |
| CN (1) | CN1274013C (https=) |
| TW (1) | TW523831B (https=) |
| WO (1) | WO2001001469A2 (https=) |
Families Citing this family (61)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2001249109A1 (en) * | 2000-03-07 | 2001-09-17 | Werner Juengling | Methods for making nearly planar dielectric films in integrated circuits |
| JP4843129B2 (ja) * | 2000-06-30 | 2011-12-21 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP3806016B2 (ja) * | 2000-11-30 | 2006-08-09 | 富士通株式会社 | 半導体集積回路 |
| US6486066B2 (en) * | 2001-02-02 | 2002-11-26 | Matrix Semiconductor, Inc. | Method of generating integrated circuit feature layout for improved chemical mechanical polishing |
| KR100378195B1 (ko) * | 2001-02-21 | 2003-03-29 | 삼성전자주식회사 | 패턴의 밀도에 연속적으로 조절되는 밀도를 갖는 더미패턴군들을 포함하는 마스크용 데이터 생성 방법 및그러한 생성 방법이 저장된 기록매체 |
| US6611045B2 (en) | 2001-06-04 | 2003-08-26 | Motorola, Inc. | Method of forming an integrated circuit device using dummy features and structure thereof |
| US7014955B2 (en) * | 2001-08-28 | 2006-03-21 | Synopsys, Inc. | System and method for indentifying dummy features on a mask layer |
| US6875682B1 (en) * | 2001-09-04 | 2005-04-05 | Taiwan Semiconductor Manufacturing Company | Mesh pad structure to eliminate IMD crack on pad |
| JP2003218244A (ja) * | 2002-01-24 | 2003-07-31 | Seiko Epson Corp | 半導体装置の製造方法 |
| US6613688B1 (en) * | 2002-04-26 | 2003-09-02 | Motorola, Inc. | Semiconductor device and process for generating an etch pattern |
| US7393755B2 (en) * | 2002-06-07 | 2008-07-01 | Cadence Design Systems, Inc. | Dummy fill for integrated circuits |
| AU2003274370A1 (en) * | 2002-06-07 | 2003-12-22 | Praesagus, Inc. | Characterization adn reduction of variation for integrated circuits |
| US20030229875A1 (en) * | 2002-06-07 | 2003-12-11 | Smith Taber H. | Use of models in integrated circuit fabrication |
| US7124386B2 (en) * | 2002-06-07 | 2006-10-17 | Praesagus, Inc. | Dummy fill for integrated circuits |
| US7712056B2 (en) * | 2002-06-07 | 2010-05-04 | Cadence Design Systems, Inc. | Characterization and verification for integrated circuit designs |
| US7152215B2 (en) * | 2002-06-07 | 2006-12-19 | Praesagus, Inc. | Dummy fill for integrated circuits |
| US7853904B2 (en) * | 2002-06-07 | 2010-12-14 | Cadence Design Systems, Inc. | Method and system for handling process related variations for integrated circuits based upon reflections |
| US7774726B2 (en) * | 2002-06-07 | 2010-08-10 | Cadence Design Systems, Inc. | Dummy fill for integrated circuits |
| US7363099B2 (en) * | 2002-06-07 | 2008-04-22 | Cadence Design Systems, Inc. | Integrated circuit metrology |
| US7309618B2 (en) * | 2002-06-28 | 2007-12-18 | Lam Research Corporation | Method and apparatus for real time metal film thickness measurement |
| US7128803B2 (en) * | 2002-06-28 | 2006-10-31 | Lam Research Corporation | Integration of sensor based metrology into semiconductor processing tools |
| US20040011462A1 (en) * | 2002-06-28 | 2004-01-22 | Lam Research Corporation | Method and apparatus for applying differential removal rates to a surface of a substrate |
| FR2843232B1 (fr) * | 2002-07-31 | 2004-11-05 | Xyalis | Procede d'homogeneisation de l'epaisseur d'un depot sur une couche comportant des motifs |
| FR2844096A1 (fr) * | 2002-08-30 | 2004-03-05 | St Microelectronics Sa | Procede de fabrication d'un circuit electrique comprenant une etape de polissage |
| US6748579B2 (en) * | 2002-08-30 | 2004-06-08 | Lsi Logic Corporation | Method of using filler metal for implementing changes in an integrated circuit design |
| US6812069B2 (en) * | 2002-12-17 | 2004-11-02 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for improving semiconductor process wafer CMP uniformity while avoiding fracture |
| US6730950B1 (en) | 2003-01-07 | 2004-05-04 | Texas Instruments Incorporated | Local interconnect using the electrode of a ferroelectric |
| US6989229B2 (en) | 2003-03-27 | 2006-01-24 | Freescale Semiconductor, Inc. | Non-resolving mask tiling method for flare reduction |
| US6905967B1 (en) * | 2003-03-31 | 2005-06-14 | Amd, Inc. | Method for improving planarity of shallow trench isolation using multiple simultaneous tiling systems |
| US7089522B2 (en) | 2003-06-11 | 2006-08-08 | Chartered Semiconductor Manufacturing, Ltd. | Device, design and method for a slot in a conductive area |
| US7175941B2 (en) * | 2003-09-08 | 2007-02-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Phase shift assignments for alternate PSM |
| US20050066739A1 (en) * | 2003-09-26 | 2005-03-31 | Lam Research Corporation | Method and apparatus for wafer mechanical stress monitoring and wafer thermal stress monitoring |
| US7481818B2 (en) * | 2003-10-20 | 2009-01-27 | Lifescan | Lancing device with a floating probe for control of penetration depth |
| US20050096686A1 (en) * | 2003-10-31 | 2005-05-05 | Allen John J. | Lancing device with trigger mechanism for penetration depth control |
| US7226839B1 (en) * | 2004-06-04 | 2007-06-05 | Spansion Llc | Method and system for improving the topography of a memory array |
| JP4401874B2 (ja) | 2004-06-21 | 2010-01-20 | 株式会社ルネサステクノロジ | 半導体装置 |
| US7226857B2 (en) | 2004-07-30 | 2007-06-05 | Micron Technology, Inc. | Front-end processing of nickel plated bond pads |
| US7476920B2 (en) | 2004-12-15 | 2009-01-13 | Infineon Technologies Ag | 6F2 access transistor arrangement and semiconductor memory device |
| US7475382B2 (en) * | 2005-02-24 | 2009-01-06 | Synopsys, Inc. | Method and apparatus for determining an improved assist feature configuration in a mask layout |
| JP5147167B2 (ja) * | 2005-07-29 | 2013-02-20 | キヤノン株式会社 | 決定方法及びプログラム |
| US7741221B2 (en) * | 2005-12-14 | 2010-06-22 | Freescale Semiconductor, Inc. | Method of forming a semiconductor device having dummy features |
| WO2007068281A1 (en) * | 2005-12-14 | 2007-06-21 | Freescale Semiconductor, Inc. | Method of forming a semiconductor device having a dummy feature |
| US7475368B2 (en) * | 2006-01-20 | 2009-01-06 | International Business Machines Corporation | Deflection analysis system and method for circuit design |
| US7767570B2 (en) * | 2006-03-22 | 2010-08-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dummy vias for damascene process |
| JP2007287928A (ja) * | 2006-04-17 | 2007-11-01 | Nec Electronics Corp | 半導体集積回路およびその製造方法ならびにマスク |
| US8003539B2 (en) | 2007-01-04 | 2011-08-23 | Freescale Semiconductor, Inc. | Integrated assist features for epitaxial growth |
| US7565639B2 (en) * | 2007-01-04 | 2009-07-21 | Freescale Semiconductor, Inc. | Integrated assist features for epitaxial growth bulk tiles with compensation |
| US8741743B2 (en) * | 2007-01-05 | 2014-06-03 | Freescale Semiconductor, Inc. | Integrated assist features for epitaxial growth |
| US7470624B2 (en) * | 2007-01-08 | 2008-12-30 | Freescale Semiconductor, Inc. | Integrated assist features for epitaxial growth bulk/SOI hybrid tiles with compensation |
| DE102007004953A1 (de) * | 2007-01-26 | 2008-07-31 | Tesa Ag | Heizelement |
| US7988794B2 (en) * | 2007-02-07 | 2011-08-02 | Infineon Technologies Ag | Semiconductor device and method |
| US7926006B2 (en) * | 2007-02-23 | 2011-04-12 | International Business Machines Corporation | Variable fill and cheese for mitigation of BEOL topography |
| US20090191468A1 (en) * | 2008-01-29 | 2009-07-30 | International Business Machines Corporation | Contact Level Mask Layouts By Introducing Anisotropic Sub-Resolution Assist Features |
| US20090250760A1 (en) * | 2008-04-02 | 2009-10-08 | International Business Machines Corporation | Methods of forming high-k/metal gates for nfets and pfets |
| JP5309728B2 (ja) * | 2008-06-27 | 2013-10-09 | 富士通セミコンダクター株式会社 | レチクルデータ作成方法及びレチクルデータ作成装置 |
| US7975246B2 (en) * | 2008-08-14 | 2011-07-05 | International Business Machines Corporation | MEEF reduction by elongation of square shapes |
| US9768182B2 (en) | 2015-10-20 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and method for forming the same |
| US10872852B2 (en) * | 2016-10-12 | 2020-12-22 | Micron Technology, Inc. | Wafer level package utilizing molded interposer |
| US10386714B2 (en) * | 2017-01-09 | 2019-08-20 | Globalfoundries Inc. | Creating knowledge base for optical proximity correction to reduce sub-resolution assist feature printing |
| US11257816B2 (en) * | 2019-08-20 | 2022-02-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for manufacturing semiconductor device including dummy gate electrodes |
| US11658103B2 (en) * | 2020-09-11 | 2023-05-23 | Qualcomm Incorporated | Capacitor interposer layer (CIL) chiplet design with conformal die edge pattern around bumps |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59186342A (ja) | 1983-04-06 | 1984-10-23 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPS6474547A (en) | 1987-09-14 | 1989-03-20 | Motorola Inc | Manufacture of semiconductor for compensating strain between pattern on semiconductor body and mask for obtaining pattern |
| US5285017A (en) | 1991-12-31 | 1994-02-08 | Intel Corporation | Embedded ground plane and shielding structures using sidewall insulators in high frequency circuits having vias |
| US5278105A (en) | 1992-08-19 | 1994-01-11 | Intel Corporation | Semiconductor device with dummy features in active layers |
| TW272310B (en) * | 1994-11-09 | 1996-03-11 | At & T Corp | Process for producing multi-level metallization in an integrated circuit |
| TW299458B (https=) | 1994-11-10 | 1997-03-01 | Intel Corp | |
| US5665633A (en) | 1995-04-06 | 1997-09-09 | Motorola, Inc. | Process for forming a semiconductor device having field isolation |
| US5981384A (en) * | 1995-08-14 | 1999-11-09 | Micron Technology, Inc. | Method of intermetal dielectric planarization by metal features layout modification |
| US5747380A (en) * | 1996-02-26 | 1998-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Robust end-point detection for contact and via etching |
| JPH1027799A (ja) * | 1996-04-22 | 1998-01-27 | Toshiba Corp | 半導体装置及びその製造方法 |
| US5885856A (en) | 1996-08-21 | 1999-03-23 | Motorola, Inc. | Integrated circuit having a dummy structure and method of making |
| JPH10144635A (ja) | 1996-11-11 | 1998-05-29 | Sony Corp | 平坦化研磨における研磨後の段差予測方法およびダミーパターン配置方法 |
| KR100243272B1 (ko) * | 1996-12-20 | 2000-03-02 | 윤종용 | 반도체 소자의 콘택 플러그 형성방법 |
| US5923563A (en) * | 1996-12-20 | 1999-07-13 | International Business Machines Corporation | Variable density fill shape generation |
| JP3743120B2 (ja) * | 1997-02-21 | 2006-02-08 | ソニー株式会社 | 露光用マスクのマスクパターン設計方法、並びに半導体集積回路の作製方法 |
| US5959320A (en) * | 1997-03-18 | 1999-09-28 | Lsi Logic Corporation | Semiconductor die having on-die de-coupling capacitance |
| KR100230421B1 (ko) * | 1997-04-22 | 1999-11-15 | 윤종용 | 반도체장치의 더미패턴 형성방법 |
| JP3767154B2 (ja) * | 1997-06-17 | 2006-04-19 | セイコーエプソン株式会社 | 電気光学装置用基板、電気光学装置、電子機器及び投写型表示装置 |
| JP3299486B2 (ja) | 1997-10-08 | 2002-07-08 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
| JP3488606B2 (ja) | 1997-10-22 | 2004-01-19 | 株式会社東芝 | 半導体装置の設計方法 |
| US6087733A (en) * | 1998-06-12 | 2000-07-11 | Intel Corporation | Sacrificial erosion control features for chemical-mechanical polishing process |
| US6232231B1 (en) * | 1998-08-31 | 2001-05-15 | Cypress Semiconductor Corporation | Planarized semiconductor interconnect topography and method for polishing a metal layer to form interconnect |
-
1999
- 1999-06-29 US US09/340,697 patent/US6396158B1/en not_active Expired - Lifetime
-
2000
- 2000-05-24 JP JP2001506596A patent/JP5249483B2/ja not_active Expired - Lifetime
- 2000-05-24 CN CNB008110158A patent/CN1274013C/zh not_active Expired - Lifetime
- 2000-05-24 WO PCT/US2000/014293 patent/WO2001001469A2/en not_active Ceased
- 2000-05-24 EP EP00939336A patent/EP1196948A2/en not_active Ceased
- 2000-05-24 KR KR1020017016903A patent/KR100722177B1/ko not_active Expired - Lifetime
- 2000-05-25 TW TW089110149A patent/TW523831B/zh not_active IP Right Cessation
-
2001
- 2001-07-17 US US09/906,874 patent/US6593226B2/en not_active Expired - Lifetime
-
2011
- 2011-08-10 JP JP2011174607A patent/JP2011228750A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20020012298A (ko) | 2002-02-15 |
| WO2001001469A3 (en) | 2001-12-27 |
| JP2011228750A (ja) | 2011-11-10 |
| TW523831B (en) | 2003-03-11 |
| KR100722177B1 (ko) | 2007-05-29 |
| CN1365516A (zh) | 2002-08-21 |
| EP1196948A2 (en) | 2002-04-17 |
| US6593226B2 (en) | 2003-07-15 |
| US6396158B1 (en) | 2002-05-28 |
| JP2003503847A (ja) | 2003-01-28 |
| US20020050655A1 (en) | 2002-05-02 |
| WO2001001469A2 (en) | 2001-01-04 |
| JP5249483B2 (ja) | 2013-07-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: FREEDOM SEMICONDUCTORS CO. Free format text: FORMER OWNER: MOTOROLA, INC. Effective date: 20040820 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20040820 Address after: Texas in the United States Applicant after: FreeScale Semiconductor Address before: Illinois Instrunment Applicant before: Motorola, Inc. |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: FISICAL SEMICONDUCTOR INC. Free format text: FORMER NAME: FREEDOM SEMICONDUCTOR CORP. |
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| CP01 | Change in the name or title of a patent holder |
Address after: Texas in the United States Patentee after: FREESCALE SEMICONDUCTOR, Inc. Address before: Texas in the United States Patentee before: FreeScale Semiconductor |
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| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: Delaware Patentee after: NXP American Corp. Address before: Texas in the United States Patentee before: FREESCALE SEMICONDUCTOR, Inc. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170512 Address after: Delaware Patentee after: VLSI Technology Co.,Ltd. Address before: Delaware Patentee before: NXP American Corp. |
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| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20060906 |