CN1238885C - 用于通过激光束使半导体结晶化的方法和装置 - Google Patents
用于通过激光束使半导体结晶化的方法和装置 Download PDFInfo
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- CN1238885C CN1238885C CNB031311628A CN03131162A CN1238885C CN 1238885 C CN1238885 C CN 1238885C CN B031311628 A CNB031311628 A CN B031311628A CN 03131162 A CN03131162 A CN 03131162A CN 1238885 C CN1238885 C CN 1238885C
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
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- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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Abstract
Description
Claims (2)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002143070A JP4668508B2 (ja) | 2002-05-17 | 2002-05-17 | 半導体結晶化方法 |
JP143097/2002 | 2002-05-17 | ||
JP143070/2002 | 2002-05-17 | ||
JP143032/2002 | 2002-05-17 | ||
JP2002143032A JP2003332257A (ja) | 2002-05-17 | 2002-05-17 | 半導体結晶化方法及び装置 |
JP2002143097A JP4212830B2 (ja) | 2002-05-17 | 2002-05-17 | シリコン結晶化方法 |
Related Child Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100790877A Division CN100380578C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的装置 |
CNB2005100790862A Division CN100369190C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的装置 |
CNB2005100790881A Division CN100355018C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的方法 |
CNB2005100790858A Division CN100385616C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的方法 |
CNB2005100790839A Division CN100394541C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的方法 |
CNB2005100790843A Division CN100369189C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1461045A CN1461045A (zh) | 2003-12-10 |
CN1238885C true CN1238885C (zh) | 2006-01-25 |
Family
ID=29424260
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031311628A Expired - Fee Related CN1238885C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的方法和装置 |
Country Status (4)
Country | Link |
---|---|
US (9) | US6977775B2 (zh) |
KR (4) | KR100799001B1 (zh) |
CN (1) | CN1238885C (zh) |
TW (1) | TWI258810B (zh) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100992120B1 (ko) * | 2003-03-13 | 2010-11-04 | 삼성전자주식회사 | 규소 결정화 시스템 및 규소 결정화 방법 |
JP4662411B2 (ja) * | 2003-03-14 | 2011-03-30 | 日立ビアメカニクス株式会社 | レーザ加工装置 |
DE10322344A1 (de) * | 2003-05-17 | 2004-12-02 | Mtu Aero Engines Gmbh | Verfahren zur Erwärmung von Bauteilen |
US7521651B2 (en) * | 2003-09-12 | 2009-04-21 | Orbotech Ltd | Multiple beam micro-machining system and method |
TWI359441B (en) | 2003-09-16 | 2012-03-01 | Univ Columbia | Processes and systems for laser crystallization pr |
JP2005144487A (ja) * | 2003-11-13 | 2005-06-09 | Seiko Epson Corp | レーザ加工装置及びレーザ加工方法 |
KR100972489B1 (ko) * | 2003-12-23 | 2010-07-26 | 엘지디스플레이 주식회사 | 레이저 결정화 장치 및 이를 이용한 결정화 방법 |
CN101677061B (zh) * | 2004-03-26 | 2013-04-03 | 株式会社半导体能源研究所 | 激光辐照方法和激光辐照装置 |
US7491909B2 (en) * | 2004-03-31 | 2009-02-17 | Imra America, Inc. | Pulsed laser processing with controlled thermal and physical alterations |
US7486705B2 (en) | 2004-03-31 | 2009-02-03 | Imra America, Inc. | Femtosecond laser processing system with process parameters, controls and feedback |
US7885311B2 (en) * | 2007-03-27 | 2011-02-08 | Imra America, Inc. | Beam stabilized fiber laser |
JP2006024735A (ja) * | 2004-07-08 | 2006-01-26 | Seiko Instruments Inc | 半導体膜の結晶化方法、及び、表示装置の製造方法 |
CN100530549C (zh) * | 2004-08-23 | 2009-08-19 | 株式会社半导体能源研究所 | 激光照射设备、照射方法和制备半导体器件的方法 |
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US20050264824A1 (en) | 2005-12-01 |
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US20080062498A1 (en) | 2008-03-13 |
KR100742481B1 (ko) | 2007-07-25 |
TWI258810B (en) | 2006-07-21 |
CN1461045A (zh) | 2003-12-10 |
KR100799001B1 (ko) | 2008-01-28 |
KR100809813B1 (ko) | 2008-03-04 |
US20050227460A1 (en) | 2005-10-13 |
US7927935B2 (en) | 2011-04-19 |
KR100808337B1 (ko) | 2008-02-27 |
US7528023B2 (en) | 2009-05-05 |
KR20030089490A (ko) | 2003-11-21 |
KR20070058424A (ko) | 2007-06-08 |
US7660042B2 (en) | 2010-02-09 |
TW200401346A (en) | 2004-01-16 |
US7410508B2 (en) | 2008-08-12 |
US20050233556A1 (en) | 2005-10-20 |
KR20070059041A (ko) | 2007-06-11 |
US20060252189A1 (en) | 2006-11-09 |
US20050225771A1 (en) | 2005-10-13 |
US20050227504A1 (en) | 2005-10-13 |
US7115457B2 (en) | 2006-10-03 |
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