CN100385616C - 用于通过激光束使半导体结晶化的方法 - Google Patents
用于通过激光束使半导体结晶化的方法 Download PDFInfo
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- CN100385616C CN100385616C CNB2005100790858A CN200510079085A CN100385616C CN 100385616 C CN100385616 C CN 100385616C CN B2005100790858 A CNB2005100790858 A CN B2005100790858A CN 200510079085 A CN200510079085 A CN 200510079085A CN 100385616 C CN100385616 C CN 100385616C
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- laser
- scanning
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- laser scanning
- crystallization
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Abstract
Description
Claims (7)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP143097/2002 | 2002-05-17 | ||
JP143070/2002 | 2002-05-17 | ||
JP2002143032A JP2003332257A (ja) | 2002-05-17 | 2002-05-17 | 半導体結晶化方法及び装置 |
JP143032/2002 | 2002-05-17 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031311628A Division CN1238885C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的方法和装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1702831A CN1702831A (zh) | 2005-11-30 |
CN100385616C true CN100385616C (zh) | 2008-04-30 |
Family
ID=29703149
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100790877A Expired - Fee Related CN100380578C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的装置 |
CNB2005100790881A Expired - Fee Related CN100355018C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的方法 |
CNB2005100790862A Expired - Fee Related CN100369190C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的装置 |
CNB2005100790839A Expired - Fee Related CN100394541C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的方法 |
CNB2005100790858A Expired - Fee Related CN100385616C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的方法 |
CNB2005100790843A Expired - Fee Related CN100369189C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的装置 |
Family Applications Before (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100790877A Expired - Fee Related CN100380578C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的装置 |
CNB2005100790881A Expired - Fee Related CN100355018C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的方法 |
CNB2005100790862A Expired - Fee Related CN100369190C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的装置 |
CNB2005100790839A Expired - Fee Related CN100394541C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100790843A Expired - Fee Related CN100369189C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的装置 |
Country Status (2)
Country | Link |
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JP (1) | JP2003332257A (zh) |
CN (6) | CN100380578C (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006135251A (ja) | 2004-11-09 | 2006-05-25 | Hitachi Ltd | レーザ結晶化装置 |
JP2007142167A (ja) * | 2005-11-18 | 2007-06-07 | Hitachi Displays Ltd | 表示装置およびその製造方法 |
CN102097368A (zh) * | 2010-11-08 | 2011-06-15 | 昆山工研院新型平板显示技术中心有限公司 | 一种低温多晶硅薄膜晶体管阵列基板的制造方法 |
CN106216832B (zh) * | 2016-08-29 | 2019-01-29 | 华南理工大学 | 一种多光束阵列振镜扫描系统 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5604360A (en) * | 1992-12-04 | 1997-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor |
US5904550A (en) * | 1992-02-28 | 1999-05-18 | Casio Computer Co., Ltd. | Method of producing a semiconductor device |
US6008101A (en) * | 1994-11-29 | 1999-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method of semiconductor device |
JP2000275668A (ja) * | 1999-03-19 | 2000-10-06 | Fujitsu Ltd | レーザアニーリング装置、液晶表示装置及びその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4511220A (en) * | 1982-12-23 | 1985-04-16 | The United States Of America As Represented By The Secretary Of The Air Force | Laser target speckle eliminator |
DE4127840A1 (de) * | 1991-08-22 | 1993-02-25 | Thomson Brandt Gmbh | Optische abtastvorrichtung |
DE69324633T2 (de) * | 1992-07-30 | 1999-12-16 | Sumitomo Electric Industries | Verfahren zur Herstellung eines einkristallinen Dünnfilmes |
EP0652308B1 (en) * | 1993-10-14 | 2002-03-27 | Neuralsystems Corporation | Method of and apparatus for forming single-crystalline thin film |
US5970368A (en) * | 1996-09-30 | 1999-10-19 | Kabushiki Kaisha Toshiba | Method for manufacturing polycrystal semiconductor film |
JPH11186163A (ja) * | 1997-12-18 | 1999-07-09 | Matsushita Electric Ind Co Ltd | 薄膜形成方法および薄膜形成装置 |
US6081381A (en) * | 1998-10-26 | 2000-06-27 | Polametrics, Inc. | Apparatus and method for reducing spatial coherence and for improving uniformity of a light beam emitted from a coherent light source |
TW473783B (en) * | 1999-08-13 | 2002-01-21 | Semiconductor Energy Lab | Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device |
US6347176B1 (en) * | 2000-06-15 | 2002-02-12 | Ultratech Stepper, Inc. | Acousto-optical light tunnel apparatus and method |
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2002
- 2002-05-17 JP JP2002143032A patent/JP2003332257A/ja active Pending
-
2003
- 2003-05-16 CN CNB2005100790877A patent/CN100380578C/zh not_active Expired - Fee Related
- 2003-05-16 CN CNB2005100790881A patent/CN100355018C/zh not_active Expired - Fee Related
- 2003-05-16 CN CNB2005100790862A patent/CN100369190C/zh not_active Expired - Fee Related
- 2003-05-16 CN CNB2005100790839A patent/CN100394541C/zh not_active Expired - Fee Related
- 2003-05-16 CN CNB2005100790858A patent/CN100385616C/zh not_active Expired - Fee Related
- 2003-05-16 CN CNB2005100790843A patent/CN100369189C/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5904550A (en) * | 1992-02-28 | 1999-05-18 | Casio Computer Co., Ltd. | Method of producing a semiconductor device |
US5604360A (en) * | 1992-12-04 | 1997-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor |
US6008101A (en) * | 1994-11-29 | 1999-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method of semiconductor device |
JP2000275668A (ja) * | 1999-03-19 | 2000-10-06 | Fujitsu Ltd | レーザアニーリング装置、液晶表示装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1702833A (zh) | 2005-11-30 |
CN100380578C (zh) | 2008-04-09 |
JP2003332257A (ja) | 2003-11-21 |
CN100369190C (zh) | 2008-02-13 |
CN100355018C (zh) | 2007-12-12 |
CN1702834A (zh) | 2005-11-30 |
CN1702830A (zh) | 2005-11-30 |
CN100394541C (zh) | 2008-06-11 |
CN1702829A (zh) | 2005-11-30 |
CN1702831A (zh) | 2005-11-30 |
CN1702832A (zh) | 2005-11-30 |
CN100369189C (zh) | 2008-02-13 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CI01 | Correction of invention patent gazette |
Correction item: Inventor Correct: Sasaki Nobuo False: Sasaki Nobuo|woo Zhong Wu|Ooki Xiaoi Number: 18 Page: 1254 Volume: 24 |
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CI03 | Correction of invention patent |
Correction item: Inventor Correct: Sasaki Nobuo False: Sasaki Nobuo|woo Zhong Wu|Ooki Xiaoi Number: 18 Volume: 24 |
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COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: SASAKI KNOB ^ YU TATSUYA ^ KOICHI OKI TO: SASAKI KNOB ^ YU TATSUYA |
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ERR | Gazette correction |
Free format text: CORRECT: INVENTOR; FROM: SASAKI KNOB ^ YU TATSUYA ^ KOICHI OKI TO: SASAKI KNOB ^ YU TATSUYA |
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C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080430 Termination date: 20120516 |