JP2003332257A - 半導体結晶化方法及び装置 - Google Patents

半導体結晶化方法及び装置

Info

Publication number
JP2003332257A
JP2003332257A JP2002143032A JP2002143032A JP2003332257A JP 2003332257 A JP2003332257 A JP 2003332257A JP 2002143032 A JP2002143032 A JP 2002143032A JP 2002143032 A JP2002143032 A JP 2002143032A JP 2003332257 A JP2003332257 A JP 2003332257A
Authority
JP
Japan
Prior art keywords
stage
semiconductor
stage member
laser
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002143032A
Other languages
English (en)
Japanese (ja)
Inventor
Nobuo Sasaki
伸夫 佐々木
Tatsuya Uzuka
達也 宇塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON LASER KK
Fujitsu Ltd
Original Assignee
NIPPON LASER KK
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON LASER KK, Fujitsu Ltd filed Critical NIPPON LASER KK
Priority to JP2002143032A priority Critical patent/JP2003332257A/ja
Priority to US10/436,673 priority patent/US6977775B2/en
Priority to TW092113102A priority patent/TWI258810B/zh
Priority to CNB2005100790843A priority patent/CN100369189C/zh
Priority to CNB2005100790877A priority patent/CN100380578C/zh
Priority to CNB031311628A priority patent/CN1238885C/zh
Priority to KR1020030031064A priority patent/KR100799001B1/ko
Priority to CNB2005100790881A priority patent/CN100355018C/zh
Priority to CNB2005100790839A priority patent/CN100394541C/zh
Priority to CNB2005100790858A priority patent/CN100385616C/zh
Priority to CNB2005100790862A priority patent/CN100369190C/zh
Publication of JP2003332257A publication Critical patent/JP2003332257A/ja
Priority to US11/147,879 priority patent/US7410508B2/en
Priority to US11/147,610 priority patent/US20050282408A1/en
Priority to US11/147,556 priority patent/US7115457B2/en
Priority to US11/148,050 priority patent/US7660042B2/en
Priority to US11/147,897 priority patent/US20050227504A1/en
Priority to US11/147,611 priority patent/US7927935B2/en
Priority to US11/483,897 priority patent/US7541230B2/en
Priority to KR1020070050603A priority patent/KR100742481B1/ko
Priority to KR1020070050604A priority patent/KR100808337B1/ko
Priority to US11/980,287 priority patent/US7528023B2/en
Priority to KR1020070117118A priority patent/KR100809813B1/ko
Pending legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
JP2002143032A 2002-05-17 2002-05-17 半導体結晶化方法及び装置 Pending JP2003332257A (ja)

Priority Applications (22)

Application Number Priority Date Filing Date Title
JP2002143032A JP2003332257A (ja) 2002-05-17 2002-05-17 半導体結晶化方法及び装置
US10/436,673 US6977775B2 (en) 2002-05-17 2003-05-13 Method and apparatus for crystallizing semiconductor with laser beams
TW092113102A TWI258810B (en) 2002-05-17 2003-05-14 Method and apparatus for crystallizing semiconductor with laser beams
CNB2005100790862A CN100369190C (zh) 2002-05-17 2003-05-16 用于通过激光束使半导体结晶化的装置
CNB2005100790877A CN100380578C (zh) 2002-05-17 2003-05-16 用于通过激光束使半导体结晶化的装置
CNB2005100790843A CN100369189C (zh) 2002-05-17 2003-05-16 用于通过激光束使半导体结晶化的装置
CNB031311628A CN1238885C (zh) 2002-05-17 2003-05-16 用于通过激光束使半导体结晶化的方法和装置
KR1020030031064A KR100799001B1 (ko) 2002-05-17 2003-05-16 레이저 빔을 이용한 반도체 결정화 방법 및 장치
CNB2005100790881A CN100355018C (zh) 2002-05-17 2003-05-16 用于通过激光束使半导体结晶化的方法
CNB2005100790839A CN100394541C (zh) 2002-05-17 2003-05-16 用于通过激光束使半导体结晶化的方法
CNB2005100790858A CN100385616C (zh) 2002-05-17 2003-05-16 用于通过激光束使半导体结晶化的方法
US11/147,879 US7410508B2 (en) 2002-05-17 2005-06-08 Apparatus for crystallizing semiconductor with laser beams
US11/147,611 US7927935B2 (en) 2002-05-17 2005-06-08 Method for crystallizing semiconductor with laser beams
US11/147,610 US20050282408A1 (en) 2002-05-17 2005-06-08 Method for crystallizing semiconductor with laser beams
US11/147,556 US7115457B2 (en) 2002-05-17 2005-06-08 Method for crystallizing semiconductor with laser beams
US11/148,050 US7660042B2 (en) 2002-05-17 2005-06-08 Apparatus for crystallizing semiconductor with laser beams
US11/147,897 US20050227504A1 (en) 2002-05-17 2005-06-08 Method for crystallizing semiconductor with laser beams
US11/483,897 US7541230B2 (en) 2002-05-17 2006-07-10 Method and apparatus for crystallizing semiconductor with laser beams
KR1020070050603A KR100742481B1 (ko) 2002-05-17 2007-05-25 레이저 빔을 이용한 반도체 결정화 방법 및 장치
KR1020070050604A KR100808337B1 (ko) 2002-05-17 2007-05-25 레이저 빔을 이용한 반도체 결정화 방법 및 장치
US11/980,287 US7528023B2 (en) 2002-05-17 2007-10-30 Apparatus for crystallizing semiconductor with laser beams
KR1020070117118A KR100809813B1 (ko) 2002-05-17 2007-11-16 레이저 빔을 이용한 반도체 결정화 방법 및 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002143032A JP2003332257A (ja) 2002-05-17 2002-05-17 半導体結晶化方法及び装置

Publications (1)

Publication Number Publication Date
JP2003332257A true JP2003332257A (ja) 2003-11-21

Family

ID=29703149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002143032A Pending JP2003332257A (ja) 2002-05-17 2002-05-17 半導体結晶化方法及び装置

Country Status (2)

Country Link
JP (1) JP2003332257A (zh)
CN (6) CN100385616C (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007142167A (ja) * 2005-11-18 2007-06-07 Hitachi Displays Ltd 表示装置およびその製造方法
KR101100441B1 (ko) 2004-11-09 2011-12-29 히다찌 컴퓨터 기끼 가부시끼가이샤 레이저 초기 결정화 장치

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102097368A (zh) * 2010-11-08 2011-06-15 昆山工研院新型平板显示技术中心有限公司 一种低温多晶硅薄膜晶体管阵列基板的制造方法
CN106216832B (zh) * 2016-08-29 2019-01-29 华南理工大学 一种多光束阵列振镜扫描系统

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4511220A (en) * 1982-12-23 1985-04-16 The United States Of America As Represented By The Secretary Of The Air Force Laser target speckle eliminator
DE4127840A1 (de) * 1991-08-22 1993-02-25 Thomson Brandt Gmbh Optische abtastvorrichtung
US5904550A (en) * 1992-02-28 1999-05-18 Casio Computer Co., Ltd. Method of producing a semiconductor device
DE69324633T2 (de) * 1992-07-30 1999-12-16 Sumitomo Electric Industries, Ltd. Verfahren zur Herstellung eines einkristallinen Dünnfilmes
US5604360A (en) * 1992-12-04 1997-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor
DE69430230T2 (de) * 1993-10-14 2002-10-31 Mega Chips Corp., Osaka Verfahren und Vorrichtung zur Herstellung eines Einkristallinen dünnen Films
US6008101A (en) * 1994-11-29 1999-12-28 Semiconductor Energy Laboratory Co., Ltd. Laser processing method of semiconductor device
US5970368A (en) * 1996-09-30 1999-10-19 Kabushiki Kaisha Toshiba Method for manufacturing polycrystal semiconductor film
JPH11186163A (ja) * 1997-12-18 1999-07-09 Matsushita Electric Ind Co Ltd 薄膜形成方法および薄膜形成装置
US6081381A (en) * 1998-10-26 2000-06-27 Polametrics, Inc. Apparatus and method for reducing spatial coherence and for improving uniformity of a light beam emitted from a coherent light source
JP2000275668A (ja) * 1999-03-19 2000-10-06 Fujitsu Ltd レーザアニーリング装置、液晶表示装置及びその製造方法
TW544743B (en) * 1999-08-13 2003-08-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US6347176B1 (en) * 2000-06-15 2002-02-12 Ultratech Stepper, Inc. Acousto-optical light tunnel apparatus and method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101100441B1 (ko) 2004-11-09 2011-12-29 히다찌 컴퓨터 기끼 가부시끼가이샤 레이저 초기 결정화 장치
JP2007142167A (ja) * 2005-11-18 2007-06-07 Hitachi Displays Ltd 表示装置およびその製造方法

Also Published As

Publication number Publication date
CN1702831A (zh) 2005-11-30
CN1702833A (zh) 2005-11-30
CN100380578C (zh) 2008-04-09
CN1702832A (zh) 2005-11-30
CN1702829A (zh) 2005-11-30
CN100355018C (zh) 2007-12-12
CN1702830A (zh) 2005-11-30
CN100394541C (zh) 2008-06-11
CN100369189C (zh) 2008-02-13
CN100385616C (zh) 2008-04-30
CN1702834A (zh) 2005-11-30
CN100369190C (zh) 2008-02-13

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