JP2003332257A - 半導体結晶化方法及び装置 - Google Patents
半導体結晶化方法及び装置Info
- Publication number
- JP2003332257A JP2003332257A JP2002143032A JP2002143032A JP2003332257A JP 2003332257 A JP2003332257 A JP 2003332257A JP 2002143032 A JP2002143032 A JP 2002143032A JP 2002143032 A JP2002143032 A JP 2002143032A JP 2003332257 A JP2003332257 A JP 2003332257A
- Authority
- JP
- Japan
- Prior art keywords
- stage
- semiconductor
- stage member
- laser
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (22)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002143032A JP2003332257A (ja) | 2002-05-17 | 2002-05-17 | 半導体結晶化方法及び装置 |
US10/436,673 US6977775B2 (en) | 2002-05-17 | 2003-05-13 | Method and apparatus for crystallizing semiconductor with laser beams |
TW092113102A TWI258810B (en) | 2002-05-17 | 2003-05-14 | Method and apparatus for crystallizing semiconductor with laser beams |
CNB2005100790862A CN100369190C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的装置 |
CNB2005100790877A CN100380578C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的装置 |
CNB2005100790843A CN100369189C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的装置 |
CNB031311628A CN1238885C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的方法和装置 |
KR1020030031064A KR100799001B1 (ko) | 2002-05-17 | 2003-05-16 | 레이저 빔을 이용한 반도체 결정화 방법 및 장치 |
CNB2005100790881A CN100355018C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的方法 |
CNB2005100790839A CN100394541C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的方法 |
CNB2005100790858A CN100385616C (zh) | 2002-05-17 | 2003-05-16 | 用于通过激光束使半导体结晶化的方法 |
US11/147,879 US7410508B2 (en) | 2002-05-17 | 2005-06-08 | Apparatus for crystallizing semiconductor with laser beams |
US11/147,611 US7927935B2 (en) | 2002-05-17 | 2005-06-08 | Method for crystallizing semiconductor with laser beams |
US11/147,610 US20050282408A1 (en) | 2002-05-17 | 2005-06-08 | Method for crystallizing semiconductor with laser beams |
US11/147,556 US7115457B2 (en) | 2002-05-17 | 2005-06-08 | Method for crystallizing semiconductor with laser beams |
US11/148,050 US7660042B2 (en) | 2002-05-17 | 2005-06-08 | Apparatus for crystallizing semiconductor with laser beams |
US11/147,897 US20050227504A1 (en) | 2002-05-17 | 2005-06-08 | Method for crystallizing semiconductor with laser beams |
US11/483,897 US7541230B2 (en) | 2002-05-17 | 2006-07-10 | Method and apparatus for crystallizing semiconductor with laser beams |
KR1020070050603A KR100742481B1 (ko) | 2002-05-17 | 2007-05-25 | 레이저 빔을 이용한 반도체 결정화 방법 및 장치 |
KR1020070050604A KR100808337B1 (ko) | 2002-05-17 | 2007-05-25 | 레이저 빔을 이용한 반도체 결정화 방법 및 장치 |
US11/980,287 US7528023B2 (en) | 2002-05-17 | 2007-10-30 | Apparatus for crystallizing semiconductor with laser beams |
KR1020070117118A KR100809813B1 (ko) | 2002-05-17 | 2007-11-16 | 레이저 빔을 이용한 반도체 결정화 방법 및 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002143032A JP2003332257A (ja) | 2002-05-17 | 2002-05-17 | 半導体結晶化方法及び装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2003332257A true JP2003332257A (ja) | 2003-11-21 |
Family
ID=29703149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002143032A Pending JP2003332257A (ja) | 2002-05-17 | 2002-05-17 | 半導体結晶化方法及び装置 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2003332257A (zh) |
CN (6) | CN100385616C (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007142167A (ja) * | 2005-11-18 | 2007-06-07 | Hitachi Displays Ltd | 表示装置およびその製造方法 |
KR101100441B1 (ko) | 2004-11-09 | 2011-12-29 | 히다찌 컴퓨터 기끼 가부시끼가이샤 | 레이저 초기 결정화 장치 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102097368A (zh) * | 2010-11-08 | 2011-06-15 | 昆山工研院新型平板显示技术中心有限公司 | 一种低温多晶硅薄膜晶体管阵列基板的制造方法 |
CN106216832B (zh) * | 2016-08-29 | 2019-01-29 | 华南理工大学 | 一种多光束阵列振镜扫描系统 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4511220A (en) * | 1982-12-23 | 1985-04-16 | The United States Of America As Represented By The Secretary Of The Air Force | Laser target speckle eliminator |
DE4127840A1 (de) * | 1991-08-22 | 1993-02-25 | Thomson Brandt Gmbh | Optische abtastvorrichtung |
US5904550A (en) * | 1992-02-28 | 1999-05-18 | Casio Computer Co., Ltd. | Method of producing a semiconductor device |
DE69324633T2 (de) * | 1992-07-30 | 1999-12-16 | Sumitomo Electric Industries, Ltd. | Verfahren zur Herstellung eines einkristallinen Dünnfilmes |
US5604360A (en) * | 1992-12-04 | 1997-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor |
DE69430230T2 (de) * | 1993-10-14 | 2002-10-31 | Mega Chips Corp., Osaka | Verfahren und Vorrichtung zur Herstellung eines Einkristallinen dünnen Films |
US6008101A (en) * | 1994-11-29 | 1999-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method of semiconductor device |
US5970368A (en) * | 1996-09-30 | 1999-10-19 | Kabushiki Kaisha Toshiba | Method for manufacturing polycrystal semiconductor film |
JPH11186163A (ja) * | 1997-12-18 | 1999-07-09 | Matsushita Electric Ind Co Ltd | 薄膜形成方法および薄膜形成装置 |
US6081381A (en) * | 1998-10-26 | 2000-06-27 | Polametrics, Inc. | Apparatus and method for reducing spatial coherence and for improving uniformity of a light beam emitted from a coherent light source |
JP2000275668A (ja) * | 1999-03-19 | 2000-10-06 | Fujitsu Ltd | レーザアニーリング装置、液晶表示装置及びその製造方法 |
TW544743B (en) * | 1999-08-13 | 2003-08-01 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
US6347176B1 (en) * | 2000-06-15 | 2002-02-12 | Ultratech Stepper, Inc. | Acousto-optical light tunnel apparatus and method |
-
2002
- 2002-05-17 JP JP2002143032A patent/JP2003332257A/ja active Pending
-
2003
- 2003-05-16 CN CNB2005100790858A patent/CN100385616C/zh not_active Expired - Fee Related
- 2003-05-16 CN CNB2005100790843A patent/CN100369189C/zh not_active Expired - Fee Related
- 2003-05-16 CN CNB2005100790839A patent/CN100394541C/zh not_active Expired - Fee Related
- 2003-05-16 CN CNB2005100790862A patent/CN100369190C/zh not_active Expired - Fee Related
- 2003-05-16 CN CNB2005100790881A patent/CN100355018C/zh not_active Expired - Fee Related
- 2003-05-16 CN CNB2005100790877A patent/CN100380578C/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101100441B1 (ko) | 2004-11-09 | 2011-12-29 | 히다찌 컴퓨터 기끼 가부시끼가이샤 | 레이저 초기 결정화 장치 |
JP2007142167A (ja) * | 2005-11-18 | 2007-06-07 | Hitachi Displays Ltd | 表示装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1702831A (zh) | 2005-11-30 |
CN1702833A (zh) | 2005-11-30 |
CN100380578C (zh) | 2008-04-09 |
CN1702832A (zh) | 2005-11-30 |
CN1702829A (zh) | 2005-11-30 |
CN100355018C (zh) | 2007-12-12 |
CN1702830A (zh) | 2005-11-30 |
CN100394541C (zh) | 2008-06-11 |
CN100369189C (zh) | 2008-02-13 |
CN100385616C (zh) | 2008-04-30 |
CN1702834A (zh) | 2005-11-30 |
CN100369190C (zh) | 2008-02-13 |
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