CN1196814A - 垂面电流自旋阀式磁阻传感器 - Google Patents
垂面电流自旋阀式磁阻传感器 Download PDFInfo
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Abstract
一种包含自旋阀(SV)结构的传感器,该自旋阀结构含有与其第一端部毗邻的受束铁磁层(98)和与相反对置的其第二端部毗邻的自由旋转铁磁层(94)。在垂面电流构形(cpp)中,第一和第二导电体(92,104)分别与自旋阀结构的第一和第二端部毗邻。在本文所公开的一个特定实施例中,差动CPP传感器(120)包含一对SV结构(SV1,SV2),各SV结构具有第一和第二导电体(132,152),公用导电体(142)插在SV结构之间。
Description
本发明涉及下述文献的主题:美国专利第5485334号,J.Lamar Nix等人的“具有改进的巴克豪森噪声抑制的磁阻装置和方法”,颁布于1996年1月16日;美国专利申请第08/401553号,由Young Keun Kim在1995年3月9日提交的“成型自旋阀式磁阻传感器以及结合磁畴稳定技术制造该传感器的方法”。上述美国专利和专利申请已转让给本发明的受让人科罗拉多昆腾外部设备公司(Quantum Peripherals Colorado Inc.),其公开内容在此供参考。
总的来说,本发明涉及磁阻(MR)自旋阀(SV)装置这一领域。更具体地说,本发明涉及垂面电流(CPP)自旋阀器件结构设计及其可供选择的一种差动传感实施例,例如用作磁性传感器或用于读取在磁性海量存储介质上编码的数据信号的磁头。
对于呈现出被称为特大磁阻效应(GMR)的磁阻装置或磁头,目前技术上所关心的是:试图在计算机海量存储磁盘驱动器和磁带中实现更高的面密度记录。由M.N.Baibich,J.M.Broto,A.Fert,F.Nguyen Van Dau,F.Petroff,P.Etienne,G.Creuzet,A.Friederich和J.Chazelas在物理评论快报(phys.Rev.Lett.)61,2472(1988)中首先对GMR效应进行了描述。一般用于GMR材料的磁阻率(ΔR/R)的大小超过各向异性磁阻(AMR)材料,而AMR材料即为当前应用中通常做为磁性读-传感器的材料。自旋阀效应是利用GMR的已知方式之一,如B.Dieny,V.S.Speriosu,S.S.P.Parkin,B.A.Gurney,D.R.Wilhoit和D.Mauri在物理评论(Phys.Rev.)B 43,1297(1991)中所述。典型的自旋阀MR器件包含两个薄铁磁层(其数量级小于100埃),由非磁性金属隔层(其数量级也小于100埃)分隔开来。一层铁磁层的磁化强度使其能自由运动,而另一层则受束(pinned)于相邻的反铁磁层或永磁层。对于任何形式的GMR结构的运行来讲,基本事实是MR响应为对应于读出场的两个磁化矢量之间夹角的函数。
以前已有若干专利描述了各种利用自旋阀效应的器件装置。例如见Dieny等人的美国专利第5159513号基于自旋阀效应的磁阻传感器,颁布于1992年10月27日;Dieny等人的第5206590号基于自旋阀效应的磁阻传感器,颁布于1993年4月27日;Baumgart等人的第5287238号双自旋阀磁阻传感器,颁布于1994年2月15日;以及Cain等人的第5301079号电流偏置型磁阻自旋阀传感器,颁布于1994年4月5日,所有这些专利已转让给国际商业机器(IBM)公司。
这些专利中所描述的各种器件装置的层叠正交结构将下铁磁层(自由旋转的磁化矢量所在层)设于基片之上而在上铁磁层之下,该上铁磁层的磁化矢量受到相邻反铁磁约束(pinning)层的约束。此外,在一切情况下均显示出读出电流是在含自旋阀的层面内流动,从而限制了MR效应。由于电流密度取决于磁阻结构的层面,因而被称为面内电流(CIP)几何构形。
在Rottmayer,R.和Zhu,J.发表于电子和电气工程师协会(IEEE)磁学汇刊第31卷1995年11月第6期的文章以CPP模式使用GMR传感器的超高密度记录磁头的一种新设计中,提出了在写磁头间隙中的GMR多层读元件,它以垂面电流的模式运行,并且受到象永磁体那样起作用的交换耦合软磁层所偏置,因而区别于传统的MR和SV磁头设计。多层读元件由与自旋阀式GMR传感器完全不同的重复层状结构组成,如前所述该自旋阀式GMR传感器既包含受束铁磁层又包含自由旋转铁磁层。此外,Rottmayer等人的文章仔细考虑了在带有与反铁磁体交换耦合的软偏置磁体以将传感器偏置到线性运行范围内的情况下,多层传感器在读/写磁头的写间隙中的位置。由于读传感器经反复暴露于写电流冲击所产生的场中会严重变坏这一事实,读传感器在写间隙中所处位置是相对未验证的。
相比之下,本发明特别实用之处在于:有益地提供以垂面电流的构形运行的自旋阀式传感器,而不是以前所提出的多层GMR传感器。自旋阀式GMR传感器由于其固有的自偏置性,因而并不需要如Rottmayer等人所提出的与反铁磁体交换耦合的软偏置磁体。此外,本文所公开的SV传感器特别实用于与读/写磁头的标准构形连用,其中可将写元件置于读元件顶上而不必暴露于写电流冲击时所产生的场中。
本文具体公开的是含自旋阀结构的传感器,该自旋阀结构具有:与其第一端部毗邻的受束铁磁层,与相反对置的其第二端部毗邻的自由旋转铁磁层。第一和第二导电体以垂面电流的构形分别与自旋阀结构的第一和第二端部毗邻。
在本文所公开的特定实施例中,差动数据传感器含有第一和第二自旋阀结构,每个自旋阀结构均具有分别与其第一端部毗邻的受束铁磁层和分别与相反对置的其第二端部毗邻的自由旋转铁磁层。第一、第二导电体分别与第一、第二自旋阀结构的第一与第二端部毗邻,公用导电体分别毗邻于第一、第二自旋阀结构的第二与第一端部。
通过下面结合附图对优选实施例的说明,将使本发明的上述和其它特征与目的及其实现方式变得更加清楚,并使发明本身得到最佳理解,附图中:
图1是先有技术自旋阀器件的空气支承面(ABS)横截面示意图,其中读磁迹宽度TW1由覆盖在上铁磁约束层上的面内电流几何结构导线的金属镀层来确定;
图2为特别有优势的根据美国专利申请第08/401553号的自旋阀器件设计结构的ABS截面示意图,图解说明了面内电流构形,其中读磁迹宽度TW2由覆盖在上铁磁层上的永磁层部分确定,而下层的器件结构可与本文下面将公开的垂面电流设计结构连用;
图3A为根据本发明一个特定实施例的垂面电流自旋阀式磁阻传感器的ABS局部视图,图解说明单个自旋阀结构,该结构包含覆盖于受束层之上的约束层,这两层合起来又覆盖在自由旋转的铁磁层之上,而该自旋阀结构本身被夹在一对导电体及毗邻的屏蔽之间;
图3B为图3A的自旋阀式磁阻传感器的局部平面侧视图,用于图解说明通过单个自旋阀结构以及局部环绕的介电间隙层的电流路径;
图4为本发明自旋阀式磁阻传感器的一个可选实施例的另一局部平面侧视图,图解说明了在垂面电流构形中构造的一对自旋阀结构(SV1和SV2),用做差动信号传感器;以及
图5为传统磁盘驱动器的剖开的顶视平面简图,它将垂面电流式传感器作为读磁头而构成本发明的应用之一。
现参照图1,它描绘了先有技术自旋阀传感器10的结构,用于图解说明典型的面内电流器件构形。先有技术自旋阀传感器10的相关部分包含带有上覆衬层14的基片12。有效的自旋阀结构本身含有两层铁磁层(由过渡金属或合金例如坡莫合金构成),图示为被非磁性间隔层18(由铜、银或金等贵金属构成)分隔开的下铁磁层16和上铁磁层24。可含有反铁磁体如FeMn、NiMn、或Ni-Co氧化物的约束层26淀积在上铁磁层24的顶上,以产生数量级为几百奥斯特(Oe)的各向异性交换耦合。因而,上铁磁层24的磁化方向被约束为:其易磁化轴垂直于空气支承面(ABS)。
衬层14(如Ta)和封盖层28(也可含Ta)用于保护有效结构。在基本上正交的层叠结构的旁侧成形有永磁层20、22,以对下铁磁层16产生磁畴控制。
先有技术自旋阀传感器10也可装在由两层受束铁磁层之间夹有一层自由铁磁层的双重结构中。这种结构导致比图1所示结构的效应大约高50%。
尽管如此,先有技术自旋阀传感器10以及双重设计结构都具有固有的MR响应减低这一缺陷。在自旋阀或任何GMR材料中的MR响应主要取决于传导电子与自旋有关的散射。在CIP几何结构的应用中,由于分流阻止了一些传导电子感受与自旋有关的散射,该分流是沿不含任何与自旋有关的散射中心的膜层进行的,例如间隔层18。此外,图1所示设计结构在制造可再现读磁头产品方面表现出潜在的缺点,这是因为需要相当大的电流密度以使电流穿过非磁性均束层和封盖层26、28而传送给自旋阀结构,所有这些膜层均固有地具有高电阻率。此外,可能无法精确确定读磁迹宽度(TW1),因为与有效磁阻传感器结构相比,导电体(或电流导线30、32)相当厚,而导线30、32和永磁层20、22都可以确定磁迹宽度。这对于读取头的稳定操作是不理想的。再者,对于用于巴克豪森噪声抑制作用的一对永磁层20、22的厚度进行精确控制是非常困难的,这是由于它们有限的厚度级,其数量级只有几十埃。例如当需要较厚的永磁层20、22以调整总磁矩(剩余磁化强度乘以膜层厚度,Mr·t),而总磁矩又决定着稳定作用的强度时,该永磁层20、22的厚度可能会大于隔层18和上铁磁层24的总厚度。这是固有的不能令人满意的问题,因为牢固受束的上铁磁层24的磁化强度会被改变。
参照图2,图示了根据美国第08/401553号专利申请所公开的成型自旋阀传感器50。在成型自旋阀传感器50的设计结构中,基片52上成形有上覆衬层54,先于任何铁磁层之前淀积有高电阻率约束层56。在约束层56淀积之后淀积有一层薄的底层铁磁层58。间隔层60和第二即顶层铁磁层62淀积在其后并构成带有斜面的台面样形状。已经发现:一个浅锥角(大体为45度或更小)有益于在制造中形成总体更为平滑的器件外形。薄的非磁性间隔层64、66(例如Cr)先于永磁层68、70淀积在底层铁磁层58和台面侧面(以及与斜侧面相接的台面上表面的局部)之上,以防止交换耦合,其可能导致底层铁磁层58的受束磁化方向的旋转。在面内电流构形中形成的导线72、74随之与永磁层68、70直接接触。封盖层76覆盖住导线72、74,永磁层68、70的一部分和顶层铁磁层62的未盖部分形成台面结构的台顶。
在所示成型自旋阀传感器50中,读磁迹的宽度(TW2)是由永磁层68、70而不是由导线72、74限定而成。这样就有可能实现可再现磁迹宽度控制,因为永磁层68、70一般比构成导线72、74的导电体要薄,从而避免后者更困难的光刻难题。此外,由于随后能将电流通过永磁层68、70和薄间隔层64、66直接传送给有效的顶层铁磁层62,因而可获得比先有技术CIP结构中更高的电流密度。
现又另参照附图3A和3B,图示了根据本发明一个特定实施例的垂面电流自旋阀式磁阻传感器80的局部ABS视图。应当注意:图2中约束层56和受束铁磁层58位于有效铁磁层62下面的那种自旋阀结构,可被用来取代所示更传统的有效层和受束层的排列。
传感器80的相关部分包含其上具有上覆衬层84的基片82。依次地,绝缘间隙层86覆盖住衬层84。第一磁屏蔽88如图所示覆盖住间隙层86。第一磁屏蔽88之上可以形成有可选间隙层90,它可含有铝氧化物(A12O3)或硅的二氧化物(SiO2)。屏蔽层可含有 NiFe,CoZrTa,FeN,或其它软磁材料及其合金。屏蔽层的厚度量级可为2微米或更薄,而间隙层90的厚度可在100至1000埃之间。
第一导电体92形成于间隙层90的顶上。第一导电体92可具有100至1000埃之间的铑(Rh)、铝(AlO)、金(Au)、钽(Ta)或银(Ag)或它们的合金。自由旋转(自由即有效)层94覆盖住第一导电体92。非磁性间隔层96覆盖住自由层94,且间隔层96的顶上形成有受束层98。约束层100覆盖在受束层98上,而其上成形有第二导电体104,该层的材料类似于制造第一导电体92所用材料。如图所示第一和第二导电体92、104与自由层94、间隔层96、受束层98和约束层100共同构成自旋阀结构102。
以相同方式,可选的间隙层106覆盖在第二导电体104上,其后是第二磁屏蔽108。介电间隙材料110如图所示环绕在自旋阀结构102以及第一和第二导电体92、104部分的周围。
仅做为示例,传感器80被图示为单个自旋阀结构102,其含有覆盖住受束层98的约束层100。这两层组合后又依次覆盖在自由旋转(“自由”即“有效”)铁磁层94上,而自旋阀结构102本身被夹在一对第一和第二导电体92、104及毗邻的第一和第二磁屏蔽88、108之间。
特别参照图3B,图中示出穿过单个自旋阀结构102的电流路径以及部分环绕的介电间隙材料110。传感器80利用CPP几何结构,迫使电流横向通过自旋阀结构102的每一层,从而防止分路电路,该分路电路会降低与自旋有关的散射并因此降低磁阻效应。这样CPP几何结构传感器80将比可比的CIP器件表现出更高的磁阻效应。尽管没有图示出,但也可在传感器80的结构中加入永磁体,以形成磁畴控制,并且在某些应用中,可以除去导体92、104而用屏蔽88、108替代作为传感器80的导电途径。
还应当注意:自旋阀结构102可基本上如图所示,亦或在可选实施例中可用图2的自旋阀结构取而代之。另外,自旋阀结构102可被代之以双自旋阀式装置,其含有由相对较厚的导体间隔层分隔开的两个或更多个自旋阀。借助双自旋阀装置的各约束层的正确取向,两个串联的自旋阀可起到模拟双条AMR磁阻传感器的作用。
现另参照图4,图示了自旋阀传感器120的一个可选实施例,其可以被用作差动读磁头。传感器120包括基片122与上覆衬层124、上覆间隙层126和第一磁屏蔽128。如同图3A和3B所示的前一实施例一样,在第一磁屏蔽128的顶上可以有可选的间隙层130。
同样,第一自旋阀结构(“SV1”)含有第一导电体132、自由层134、间隔层136、受束层138和约束层140。公用导电体(“导体C”)142覆盖住第一自旋阀结构SV1的约束层。包含自由层144、间隔层146、受束层148和约束层150的第二自旋阀结构(“SV2”)的结构成形于公用导体142之上。第二导电体152成形于第二自旋阀结构SV2的约束层150的顶上。同样地,第二导电体152顶上可成形有可选的间隙层154,随后为第二磁屏蔽156。
上述图3A、3B和图4所描述和图示的CPP自旋阀传感器,其制造和工艺也比传统的CIP设计结构要简单,由于前者固有的平面性,因而易于光刻工艺操作。此外,本文前面所公开的CPP自旋阀传感器可以用较少的工艺步骤来制造。
现在另参照附图5,图中示出了磁盘驱动器170的剖开的顶视平面简图,该驱动器有可能与本发明的垂面电流传感器连用。磁盘驱动器170的相关部分包含若干个绕中心轴旋转的磁盘172。可含本发明的传感器作为读元件的读/写磁头174,通过定位器176相对于磁盘172的表面178上的若干同心数据磁迹定位,以将数据写到磁性硬表面178上或从其上读取数据。本文前面所公开的传感器还可与磁带驱动器和其它计算机海量存储用途等连用。
因此,所公开的CPP自旋阀传感器优于传统的CIP设计结构,因为它提供了增强的ΔR/R响应(其数量级比传统的CIP几何结构提高两倍)和更平面的工艺性,并减少了生产步骤。
虽然上面已对本发明的原理连同特定器件结构和生产技术做了说明,但应当清楚地理解上述说明仅做为示例而并不是本发明范围的限制条件。尤其应认识到对于相关领域的技术人员而言,上述公开的内容将启发出其它改型。这种改型可能包含本身已知的其它特性,这些特性可能会被用于取代或附加本文已描述的特性。虽然本申请中将权利要求阐述为特定的特征组合,但应当理解本公开的范围还包括:对于相关领域技术人员将是显而易见的那些、或明显或不明显公开的任何新颖特征或这些特征的任何新颖组合,或对它们的任何归纳或改型,无论是否与目前任何权项中所要求的同一发明有关,也无论是否能减轻任何或全部本发明所面临的相同技术问题。因此在本申请或由本申请所派生的任何其它申请的审查期间,申请人保留对这类特征和/或这类特征的组合阐述新权利要求的权利。
Claims (58)
1.一种传感器,包含有:
自旋阀结构,具有与其第一端部毗临的受束铁磁层和与相反对置的其第二端部毗临的自由旋转铁磁层;以及
分别与所述自旋阀结构的所述第一和第二端部毗邻的第一和第二导电体。
2.如权利要求1所述的传感器,其特征在于,它还包含有:在所述自旋阀结构的所述第一端部覆盖在所述受束层上的约束层。
3.如权利要求1所述的传感器,其特征在于,它还包含有:位于所述受束的和自由旋转的铁磁层之间的间隔层。
4.如权利要求1所述的传感器,其特征在于,它还包含有:设置在所述第一和第二导电体之侧向的基本平行且间隔开的第一和第二磁屏蔽。
5.如权利要求4所述的传感器,其特征在于,它还包含有:设置在所述第一与第二导电体和所述第一与第二磁屏蔽之间的第一和第二间隙层。
6.如权利要求4所述的传感器,其特征在于,它还包含有:设置在所述第一与第二磁屏蔽中选定的一个之侧向的基片和上覆衬层。
7.如权利要求6所述的传感器,其特征在于,它还包含有:插在所述衬层和所述第一与第二磁屏蔽中选定的一个之间的中间间隙层。
8.如权利要求1所述的传感器,其特征在于:所述受束的和自由旋转的铁磁层含有过渡金属。
9.如权利要求8所述的传感器,其特征在于:所述过渡金属含有坡莫合金。
10.如权利要求1所述的传感器,其特征在于:所述受束的和自由旋转的铁磁层的厚度大体在20-200埃之间。
11.如权利要求10所述的传感器,其特征在于:所述受束的和自由旋转的铁磁层的厚度大体为100埃。
12.如权利要求2所述的传感器,其特征在于:所述约束层含有交换耦合的反铁磁体。
13.如权利要求12所述的传感器,其特征在于:所述交换耦合的反铁磁体选自包括FeMn、NiMn、NiO和NiCoO的一组中。
14.如权利要求2所述的传感器,其特征在于:所述约束层包含永磁层。
15.如权利要求14所述的传感器,其特征在于:所述永磁层选自包括Cr及其合金的一组中。
16.如权利要求14所述的传感器,其特征在于:所述永磁层厚度大体在50-500埃之间。
17.如权利要求3所述的传感器,其特征在于:所述间隔层含有非磁性材料。
18.如权利要求17所述的传感器,其特征在于:所述非磁性材料含有贵金属。
19.如权利要求3所述的传感器,其特征在于:所述间隔层厚度大体在10-50埃之间。
20.如权利要求6所述的传感器,其特征在于:所述衬层选自包括Ta,Al与Si的氧化物的一组中。
21.如权利要求1所述的传感器,其特征在于,它还包含有居于所述第一和第二导电体中间、基本环绕着所述自旋阀结构的电介质。
22.如权利要求1所述的传感器,其特征在于:所述第一和第二导电体选自包括Rh、Al、Au、Ta、Ag及它们的合金的一组中。
23.如权利要求22所述的传感器,其特征在于:所述第一和第二导电体的厚度大体在100-1000埃之间。
24.如权利要求4所述的传感器,其特征在于:所述第一和第二磁屏蔽含有较软的磁材料。
25.如权利要求24所述的传感器,其特征在于:所述较软的磁材料选自包括坡莫合金、NiFe、CoZrTa及它们的合金的一组中。
26.如权利要求4所述的传感器,其特征在于:所述第一和第二磁屏蔽的厚度大体等于或小于2μ。
27.如权利要求5所述的传感器,其特征在于:所述第一和第二间隙层选自包括Al2O3和SiO2的一组中。
28.如权利要求27所述的传感器,其特征在于:所述第一和第二间隙层的厚度大体在100-1000埃之间。
29.如权利要求1所述的传感器,其特征在于,它还包含有:
头盘组件;
可旋转地装在所述头盘组件中的至少一个磁存储介质,其上具有编码数据;以及
可移动地装在所述头盘组件中的至少一个定位器机构,用于使所述传感器相对于所述存储介质定位,以读取所述数据的选定部分。
30.一种传感器,包含有:
第一和第二自旋阀结构,每个都含有分别与其第一端部毗邻的受束铁磁层和分别与相反对置的其第二端部毗邻的自由旋转铁磁层;
分别与所述第一、第二自旋阀结构的所述第一、第二端部毗邻的第一和第二导电体;以及
分别与所述第一、第二自旋阀结构的第二和第一端部毗邻的公用导电体。
31.如权利要求30所述的传感器,其特征在于,它还包含有:在所述第一和第二自旋阀结构的所述第一端部覆盖在所述受束层上的约束层。
32.如权利要求30所述的传感器,其特征在于,它还包含有:位于第一和第二自旋阀结构的所述受束的和自由旋转的铁磁层之间的间隔层。
33.如权利要求30所述的传感器,其特征在于,它还包含有:设置在所述第一和第二导电体之侧的基本平行且间隔开的第一和第二磁屏蔽。
34.如权利要求33所述的传感器,其特征在于,它还包含有:设置在所述第一、第二导电体和所述第一、第二磁屏蔽之间的第一和第二间隙层。
35.如权利要求33所述的传感器,其特征在于,它还包含有:设置在所述第一与第二磁屏蔽中选定的一个之侧向的基片和上覆衬层。
36.如权利要求35所述的传感器,其特征在于,它还包含有:插在所述衬层和所述第一、第二磁屏蔽中所述选定的一个之间的中间间隙层。
37.如权利要求30所述的传感器,其特征在于:所述第一和第二自旋阀结构的所述受束的和自由旋转的铁磁层含有过渡金属。
38.如权利要求37所述的传感器,其特征在于:所述过渡金属含有坡莫合金。
39.如权利要求30所述的传感器,其特征在于:所述第一和第二自旋阀结构的所述受束的和自由旋转的铁磁层的厚度大体在20-200埃之间。
40.如权利要求39所述的传感器,其特征在于:所述受束的和自由旋转的铁磁层厚度大体为100埃。
41.如权利要求31所述的传感器,其特征在于:所述约束层含有交换耦合的反铁磁体。
42.如权利要求41所述的传感器,其特征在于:所述交换耦合的反铁磁体选自包括FeMn、NiMn、NiO和NiCoO的一组中。
43.如权利要求31所述的传感器,其特征在于:所述约束层包含永磁层。
44.如权利要求43所述的传感器,其特征在于:所述永磁层选自包括Cr及其合金的一组中。
45.如权利要求44所述的传感器,其特征在于:所述永磁层厚度大体在50-500埃之间。
46.如权利要求32所述的传感器,其特征在于:所述间隔层含有非磁性材料。
47.如权利要求46所述的传感器,其特征在于:所述非磁性材料含有贵金属。
48.如权利要求32所述的传感器,其特征在于:所述间隔层厚度大体在10-50埃之间。
49.如权利要求35所述的传感器,其特征在于:所述衬层选自包括Ta,Al与Si的氧化物的一组中。
50.如权利要求30所述的传感器,其特征在于,它还包含有:居于所述第一、第二导电体与公用导电体中间、基本上环绕着所述第一和第二自旋阀结构的电介质。
51.如权利要求30所述的传感器,其特征在于:所述第一、第二及公用导电体选自包括Rh、Al、Au、Ta、Ag及它们的合金的一组中。
52.如权利要求51所述的传感器,其特征在于:所述第一、第二和公用导电体的厚度大体在100-1000埃之间。
53.如权利要求33所述的传感器,其特征在于:所述第一和第二磁屏蔽含有较软的磁材料。
54.如权利要求53所述的传感器,其特征在于:所述较软的磁材料选自包括坡莫合金、NiFe、CoZrTa及它们的合金的一组中。
55.如权利要求33所述的传感器,其特征在于:所述第一和第二磁屏蔽的厚度大体等于或小于2μ。
56.如权利要求34所述的传感器,其特征在于:所述第一和第二间隙层选自包括Al2O3和SiO2的一组中。
57.如权利要求56所述的传感器,其特征在于:所述第一和第二间隙层的厚度大体在100-1000埃之间。
58.如权利要求30所述的传感器,其特征在于,它还包含有:
头盘组件;
可旋转地装在所述头盘组件中的至少一个磁存储介质,其上具有编码数据;以及
可移动地装在所述头盘组件中的至少一个定位器机构,用于使所述传感器相对于所述存储介质定位,以读取所述数据的选定部分。
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US08/653,322 US5668688A (en) | 1996-05-24 | 1996-05-24 | Current perpendicular-to-the-plane spin valve type magnetoresistive transducer |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6801413B2 (en) | 2001-08-10 | 2004-10-05 | Fujitsu Limited | Magnetic sensor, magnetic head and magnetic recording apparatus |
CN100456511C (zh) * | 2003-03-27 | 2009-01-28 | 富士通株式会社 | Cpp结构的磁阻效应设备和磁头滑块 |
CN1975863B (zh) * | 2002-10-09 | 2010-05-26 | 富士通株式会社 | 垂直平面电流结构的磁阻元件和磁头滑块 |
CN1591675B (zh) * | 1999-12-17 | 2011-11-09 | 艾沃思宾技术公司 | 具有双磁态的磁性元件 |
Families Citing this family (156)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6590750B2 (en) * | 1996-03-18 | 2003-07-08 | International Business Machines Corporation | Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices |
TW369649B (en) * | 1997-02-20 | 1999-09-11 | Koninkl Philips Electronics Nv | Single-channel magnetoresistive magnetic head and device including such a magnetic head |
US6064552A (en) * | 1997-03-18 | 2000-05-16 | Kabushiki Kaisha Toshiba | Magnetoresistive head having magnetic yoke and giant magnetoresistive element such that a first electrode is formed on the giant magnetoresistive element which in turn is formed on the magnetic yoke which acts as a second electrode |
US5768071A (en) * | 1997-06-19 | 1998-06-16 | International Business Machines Corporation | Spin valve sensor with improved magnetic stability of the pinned layer |
US5898547A (en) * | 1997-10-24 | 1999-04-27 | International Business Machines Corporation | Magnetic tunnel junction magnetoresistive read head with sensing layer as flux guide |
US6099699A (en) * | 1998-04-22 | 2000-08-08 | Matsushita-Kotobuki Electronics Industries, Ltd. | Thin encapsulation process for making thin film read/write heads |
US6127045A (en) * | 1998-05-13 | 2000-10-03 | International Business Machines Corporation | Magnetic tunnel junction device with optimized ferromagnetic layer |
JP2000057538A (ja) * | 1998-08-05 | 2000-02-25 | Hitachi Ltd | 磁気抵抗センサを用いた磁気ヘッドおよび磁気記録再生装置 |
US6185078B1 (en) * | 1998-08-21 | 2001-02-06 | International Business Machines Corporation | Spin valve read head with antiferromagnetic oxide film as longitudinal bias layer and portion of first read gap |
US6219212B1 (en) | 1998-09-08 | 2001-04-17 | International Business Machines Corporation | Magnetic tunnel junction head structure with insulating antiferromagnetic layer |
US6156487A (en) * | 1998-10-23 | 2000-12-05 | Matsushita-Kotobuki Electronics Industries, Ltd. | Top surface imaging technique for top pole tip width control in magnetoresistive read/write head processing |
US6118638A (en) * | 1998-11-02 | 2000-09-12 | Read-Rite Corporation | CPP magnetoresistive device and method for making same |
US6198609B1 (en) * | 1998-11-09 | 2001-03-06 | Read-Rite Corporation | CPP Magnetoresistive device with reduced edge effect and method for making same |
US6542342B1 (en) * | 1998-11-30 | 2003-04-01 | Nec Corporation | Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer |
US6567246B1 (en) * | 1999-03-02 | 2003-05-20 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element |
US6134089A (en) * | 1999-03-11 | 2000-10-17 | Read-Rite Corporation | Current perpendicular to plane magnetoresistive device with low resistance lead |
US6181537B1 (en) * | 1999-03-29 | 2001-01-30 | International Business Machines Corporation | Tunnel junction structure with junction layer embedded in amorphous ferromagnetic layers |
US6433970B1 (en) * | 1999-06-07 | 2002-08-13 | Read-Rite Corporation | Structure and method for redeposition free thin film CPP read sensor fabrication |
US6292335B1 (en) * | 1999-06-25 | 2001-09-18 | International Business Machines Corporation | Continuous junction spin valve read head stabilized without hard bias layers |
US6381094B1 (en) | 1999-07-23 | 2002-04-30 | Hardayal Singh Gill | Shield structure with a heat sink layer for dissipating heat from a read sensor |
US6385017B1 (en) | 1999-09-30 | 2002-05-07 | Headway Technologies, Inc. | Continuous free layer spin valve sensor with patterned exchange underlayer stabilization |
US6204071B1 (en) * | 1999-09-30 | 2001-03-20 | Headway Technologies, Inc. | Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration |
US6381105B1 (en) | 1999-10-22 | 2002-04-30 | Read-Rite Corporation | Hybrid dual spin valve sensor and method for making same |
US6519119B1 (en) | 1999-11-03 | 2003-02-11 | Seagate Technology, Llc | Structure for current perrpendicular to plane giant magnetoresistive read heads |
US6460243B1 (en) | 1999-11-22 | 2002-10-08 | International Business Machines Corporation | Method of making low stress and low resistance rhodium (RH) leads |
US6770382B1 (en) * | 1999-11-22 | 2004-08-03 | Headway Technologies, Inc. | GMR configuration with enhanced spin filtering |
US6480365B1 (en) * | 1999-12-09 | 2002-11-12 | International Business Machines Corporation | Spin valve transistor using a magnetic tunnel junction |
US6643103B1 (en) * | 2000-01-05 | 2003-11-04 | Seagate Technology Llc | Very high linear resolution CPP differential dual spin valve magnetoresistive head |
US6807032B1 (en) | 2000-02-04 | 2004-10-19 | Seagate Technology Llc | Magnetic read head wherein the shields are used as electrical leads and have a minimized anisotropic magneto-resistance effect |
US6621664B1 (en) | 2000-02-28 | 2003-09-16 | Seagate Technology Llc | Perpendicular recording head having integrated read and write portions |
US6396668B1 (en) | 2000-03-24 | 2002-05-28 | Seagate Technology Llc | Planar double spin valve read head |
US6717770B1 (en) | 2000-03-24 | 2004-04-06 | Seagate Technology Llc | Recording head for applying a magnetic field perpendicular to the magnetizations within magnetic storage media |
US6466419B1 (en) | 2000-03-31 | 2002-10-15 | Seagate Technology Llc | Current perpendicular to plane spin valve head |
US6700760B1 (en) | 2000-04-27 | 2004-03-02 | Seagate Technology Llc | Tunneling magnetoresistive head in current perpendicular to plane mode |
JP2001312803A (ja) * | 2000-04-28 | 2001-11-09 | Fujitsu Ltd | 磁気ヘッド及び磁気ヘッドの製造方法 |
US6587317B2 (en) * | 2000-05-03 | 2003-07-01 | International Business Machines Corporation | Spin valve sensor having a pinned layer structure composed of cobalt iron vanadium (CoFeV) |
JP3575683B2 (ja) | 2000-10-05 | 2004-10-13 | 松下電器産業株式会社 | 多素子型磁気抵抗素子 |
US6496334B1 (en) * | 2000-05-26 | 2002-12-17 | Read-Rite Corportion | Data storage and retrieval apparatus with thin film read head having planarized extra gap and shield layers and method of fabrication thereof |
KR20030011361A (ko) * | 2000-06-22 | 2003-02-07 | 마쯔시다덴기산교 가부시키가이샤 | 자기 저항 효과 소자와 이것을 이용한 자기 저항 효과형헤드 및 자기 기록 재생 장치 |
JP3562447B2 (ja) * | 2000-07-10 | 2004-09-08 | Tdk株式会社 | 磁気抵抗効果型薄膜磁気ヘッド |
JP2002025018A (ja) * | 2000-07-10 | 2002-01-25 | Tdk Corp | 磁気抵抗効果型薄膜磁気ヘッド及びその製造方法 |
JP2002025017A (ja) * | 2000-07-10 | 2002-01-25 | Tdk Corp | 磁気抵抗効果型薄膜磁気ヘッド |
US6914749B2 (en) * | 2000-07-25 | 2005-07-05 | Seagate Technology Llc | Magnetic anisotropy of soft-underlayer induced by magnetron field |
US6512660B1 (en) | 2000-08-07 | 2003-01-28 | Tdk Corporation | Current perpendicular-to-the-plane magnetoresistance read head with longitudinal or transverse bias provided by current |
US6680827B2 (en) | 2000-08-07 | 2004-01-20 | Tdk Corporation | Dual spin valve CPP MR with flux guide between free layers thereof |
US6563679B1 (en) | 2000-08-08 | 2003-05-13 | Tdk Corporation | Current perpendicular-to-the-plane magnetoresistance read heads with transverse magnetic bias |
US20020036876A1 (en) * | 2000-09-06 | 2002-03-28 | Yasuhiro Kawawake | Magnetoresistive element, method for manufacturing the same, and magnetic device using the same |
JP2002092829A (ja) * | 2000-09-21 | 2002-03-29 | Fujitsu Ltd | 磁気抵抗センサ及び磁気抵抗ヘッド |
JP3647736B2 (ja) * | 2000-09-29 | 2005-05-18 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置 |
US6885527B1 (en) * | 2000-10-26 | 2005-04-26 | Headway Technologies, Inc. | Process to manufacture a top spin valve |
JP2002150512A (ja) * | 2000-11-08 | 2002-05-24 | Sony Corp | 磁気抵抗効果素子および磁気抵抗効果型磁気ヘッド |
JP3995072B2 (ja) | 2000-11-16 | 2007-10-24 | 富士通株式会社 | Cpp構造スピンバルブヘッド |
JP2002163809A (ja) | 2000-11-22 | 2002-06-07 | Sony Corp | 磁気抵抗効果素子の製造方法と磁気抵抗効果型磁気ヘッドの製造方法 |
JP3760095B2 (ja) | 2000-12-14 | 2006-03-29 | 株式会社日立グローバルストレージテクノロジーズ | 2素子型再生センサ、垂直磁気記録再生用薄膜磁気ヘッド及び垂直磁気記録再生装置 |
US6724583B2 (en) | 2000-12-19 | 2004-04-20 | Seagate Technology Llc | Adjustable permanent magnet bias |
US6654209B2 (en) | 2001-01-10 | 2003-11-25 | Seagate Technology Llc | Low resistance lead structure for a low resistance magnetic read head |
US6724582B2 (en) | 2001-01-19 | 2004-04-20 | Kabushiki Kaisha Toshiba | Current perpendicular to plane type magnetoresistive device, magnetic head, and magnetic recording/reproducing apparatus |
US6809900B2 (en) | 2001-01-25 | 2004-10-26 | Seagate Technology Llc | Write head with magnetization controlled by spin-polarized electron current |
US6905780B2 (en) * | 2001-02-01 | 2005-06-14 | Kabushiki Kaisha Toshiba | Current-perpendicular-to-plane-type magnetoresistive device, and magnetic head and magnetic recording-reproducing apparatus using the same |
US6798623B2 (en) | 2001-02-08 | 2004-09-28 | Seagate Technology Llc | Biased CPP sensor using spin-momentum transfer |
JP3583079B2 (ja) | 2001-03-26 | 2004-10-27 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド、磁気再生装置及び磁気記憶装置 |
US6704175B2 (en) | 2001-03-28 | 2004-03-09 | Tdk Corporation | Current perpendicular-to-the-plane magnetoresistance read head |
US20020145832A1 (en) * | 2001-04-04 | 2002-10-10 | Seagate Technology Llc | Perpendicular magnetic recording head with soft underlayer biasing |
JP4282249B2 (ja) | 2001-04-13 | 2009-06-17 | Tdk株式会社 | 磁気抵抗効果型素子およびそれを用いた薄膜磁気ヘッド、磁気ヘッド装置ならびに磁気ディスク装置 |
JP3563375B2 (ja) * | 2001-06-19 | 2004-09-08 | アルプス電気株式会社 | 磁気検出素子及び前記磁気検出素子を用いた薄膜磁気ヘッド |
WO2003010758A1 (en) | 2001-07-24 | 2003-02-06 | Seagate Technology Llc | Write head for high anisotropy media |
JP2003045007A (ja) * | 2001-07-26 | 2003-02-14 | Fujitsu Ltd | 磁気ヘッド |
US6636389B2 (en) | 2001-08-03 | 2003-10-21 | International Business Machines Corporation | GMR magnetic transducer with nano-oxide exchange coupled free layers |
JP3971140B2 (ja) | 2001-08-14 | 2007-09-05 | Tdk株式会社 | 磁気抵抗効果素子並びにこれを用いた磁気ヘッド及びヘッドサスペンションアセンブリ |
JP3877985B2 (ja) * | 2001-08-15 | 2007-02-07 | 富士通株式会社 | 磁気抵抗ヘッド及びその製造方法 |
US6661620B2 (en) | 2001-08-28 | 2003-12-09 | Seagate Technology Llc | Differential CPP sensor |
US7587809B2 (en) * | 2001-09-12 | 2009-09-15 | Seagate Technology Llc | Method for forming a MR reader with reduced shield topography and low parasitic resistance |
JP3958947B2 (ja) * | 2001-09-14 | 2007-08-15 | アルプス電気株式会社 | 磁気検出素子及びその製造方法 |
US6888703B2 (en) * | 2001-09-17 | 2005-05-03 | Headway Technologies, Inc. | Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane GMR heads |
US6636400B2 (en) | 2001-09-18 | 2003-10-21 | International Business Machines Corporation | Magnetoresistive head having improved hard biasing characteristics through the use of a multi-layered seed layer including an oxidized tantalum layer and a chromium layer |
US6731477B2 (en) | 2001-09-20 | 2004-05-04 | Hitachi Global Storage Technologies Netherlands B.V. | Current-perpendicular-to-plane spin-valve sensor with metallic oxide barrier layer and method of fabrication |
JP2003152239A (ja) * | 2001-11-12 | 2003-05-23 | Fujitsu Ltd | 磁気抵抗効果素子、及び、それを有する読み取りヘッド並びにドライブ |
US6624985B1 (en) | 2002-01-07 | 2003-09-23 | International Business Machines Corporation | Pinning layer seeds for CPP geometry spin valve sensors |
JP2003248909A (ja) | 2002-02-27 | 2003-09-05 | Hitachi Ltd | 磁気ヘッド及びそれを備える磁気記録再生装置、並びに磁気メモリ |
US6856493B2 (en) * | 2002-03-21 | 2005-02-15 | International Business Machines Corporation | Spin valve sensor with in-stack biased free layer and antiparallel (AP) pinned layer pinned without a pinning layer |
JP2003318460A (ja) * | 2002-04-24 | 2003-11-07 | Alps Electric Co Ltd | 磁気検出素子及びその製造方法 |
US6683762B2 (en) | 2002-06-11 | 2004-01-27 | Headway Technologies, Inc. | CPP GMR device with inverse GMR material |
US6953601B2 (en) * | 2002-06-11 | 2005-10-11 | Headway Technologies, Inc. | Synthetic free layer for CPP GMR |
US6713800B2 (en) * | 2002-06-27 | 2004-03-30 | Seagate Technology Llc | Magnetoresistive sensor with reduced side-reading effect |
JP4487472B2 (ja) | 2002-07-05 | 2010-06-23 | 株式会社日立製作所 | 磁気抵抗効果素子、及びこれを備える磁気ヘッド、磁気記録装置、磁気メモリ |
US7133264B2 (en) * | 2002-09-13 | 2006-11-07 | Hitachi Global Storage Technologies Netherlands B.V. | High resistance sense current perpendicular-to-plane (CPP) giant magnetoresistive (GMR) head |
US20050099737A1 (en) * | 2002-10-09 | 2005-05-12 | Fujitsu Limited | Current-perpendicular-to-the-plane structure magnetoresistive element and head slider including the same |
US6903904B2 (en) * | 2002-10-22 | 2005-06-07 | Headway Technologies, Inc. | CPP GMR synthetic spin valve enhancement |
JP2004193439A (ja) * | 2002-12-13 | 2004-07-08 | Hitachi Ltd | 磁気抵抗効果ヘッド及びその製造方法 |
US7016163B2 (en) * | 2003-02-20 | 2006-03-21 | Honeywell International Inc. | Magnetic field sensor |
US6998150B2 (en) * | 2003-03-12 | 2006-02-14 | Headway Technologies, Inc. | Method of adjusting CoFe free layer magnetostriction |
US6873501B2 (en) * | 2003-04-03 | 2005-03-29 | Headway Technologies, Inc. | CPP spin valve head with bias point control |
JP3961497B2 (ja) * | 2003-04-18 | 2007-08-22 | アルプス電気株式会社 | Cpp型巨大磁気抵抗効果ヘッド |
JP4082274B2 (ja) | 2003-05-22 | 2008-04-30 | 株式会社日立製作所 | 磁気センサ及びそれを備える磁気ヘッド |
US6987650B2 (en) * | 2003-05-22 | 2006-01-17 | Headway Technologies, Inc. | Device with thermoelectric cooling |
US6759084B1 (en) | 2003-06-05 | 2004-07-06 | Headway Technologies, Inc. | Process to form NOL structure for CPP GMR |
EP1498744B1 (en) * | 2003-07-18 | 2011-08-10 | Yamaha Corporation | Magnetic sensor and manufacturing method therefor |
US7330339B2 (en) * | 2003-07-25 | 2008-02-12 | Hitachi Global Storage Technologies Netherlands B.V. | Structure providing enhanced self-pinning for CPP GMR and tunnel valve heads |
JP2005078750A (ja) * | 2003-09-02 | 2005-03-24 | Toshiba Corp | 磁気記録再生装置 |
US7075758B2 (en) * | 2003-09-08 | 2006-07-11 | Headway Technologies, Inc. | Supplementary shield for CPP GMR read head |
JP2005086112A (ja) * | 2003-09-10 | 2005-03-31 | Toshiba Corp | 磁気抵抗効果素子、磁気ヘッド、ヘッドサスペンションアッセンブリ、および磁気再生装置 |
JP4128938B2 (ja) | 2003-10-28 | 2008-07-30 | 株式会社日立製作所 | 磁気ヘッド及び磁気記録再生装置 |
JP2005136309A (ja) * | 2003-10-31 | 2005-05-26 | Toshiba Corp | 磁気抵抗効果素子、磁気ヘッド、ヘッドサスペンションアッセンブリ、磁気再生装置、磁気抵抗効果素子の製造方法、および、磁気抵抗効果素子製造装置 |
JP3818592B2 (ja) * | 2003-11-04 | 2006-09-06 | Tdk株式会社 | 磁気抵抗効果装置およびその製造方法、薄膜磁気ヘッド、ヘッドジンバルアセンブリならびにハードディスク装置 |
US7016160B2 (en) | 2003-11-18 | 2006-03-21 | Seagate Technology Llc | Differential CPP reader for perpendicular magnetic recording |
US7016168B2 (en) * | 2003-11-20 | 2006-03-21 | Headway Technologies, Inc. | Method of increasing CPP GMR in a spin valve structure |
US7118680B2 (en) * | 2003-11-20 | 2006-10-10 | Headway Technologies, Inc. | Self-alignment scheme for enhancement of CPP-GMR |
US7093347B2 (en) * | 2003-12-05 | 2006-08-22 | Seagate Technology Llc | Method of making a current-perpendicular to the plane (CPP) magnetoresistive (MR) sensor |
US7279269B2 (en) * | 2003-12-12 | 2007-10-09 | Headway Technologies, Inc. | CPP head with parasitic shunting reduction |
US7141314B2 (en) * | 2004-02-25 | 2006-11-28 | Headway Technologies, Inc. | CPP GMR and magnetostriction improvement by laminating Co90Fe10 free layer with thin Fe50Co50 layers |
US7180716B2 (en) * | 2004-03-30 | 2007-02-20 | Headway Technologies, Inc. | Fabrication method for an in-stack stabilized synthetic stitched CPP GMR head |
US7323215B2 (en) * | 2004-05-14 | 2008-01-29 | Headway Technologies, Inc. | Free layer design for CPP GMR enhancement |
US7390529B2 (en) * | 2004-05-26 | 2008-06-24 | Headway Technologies, Inc. | Free layer for CPP GMR having iron rich NiFe |
US7242556B2 (en) * | 2004-06-21 | 2007-07-10 | Hitachi Global Storage Technologies Netherlands B.V. | CPP differential GMR sensor having antiparallel stabilized free layers for perpendicular recording |
US7436632B2 (en) * | 2004-06-30 | 2008-10-14 | Seagate Technology Llc | Differential/dual CPP recording head |
US7331100B2 (en) * | 2004-07-07 | 2008-02-19 | Headway Technologies, Inc. | Process of manufacturing a seed/AFM combination for a CPP GMR device |
US7288281B2 (en) * | 2004-09-02 | 2007-10-30 | Headway Technologies, Inc. | CPP spin valve with ultra-thin CoFe(50%) laminations |
US7382589B2 (en) * | 2004-11-18 | 2008-06-03 | Headway Technologies, Inc. | CPP with elongated pinned layer |
US7355823B2 (en) * | 2005-01-26 | 2008-04-08 | Head Way Technologies, Inc. | Ta based bilayer seed for IrMn CPP spin valve |
US7352543B2 (en) * | 2005-01-26 | 2008-04-01 | Headway Technologies, Inc. | Ta based bilayer seed for IrMn CPP spin valve |
US7382584B2 (en) * | 2005-07-06 | 2008-06-03 | Headway Technologies, Inc. | Method to increase CCP-CPP GMR output by thermoelectric cooling |
US7918014B2 (en) * | 2005-07-13 | 2011-04-05 | Headway Technologies, Inc. | Method of manufacturing a CPP structure with enhanced GMR ratio |
US7333306B2 (en) * | 2005-08-23 | 2008-02-19 | Headway Technologies, Inc. | Magnetoresistive spin valve sensor with tri-layer free layer |
US7583481B2 (en) * | 2005-09-23 | 2009-09-01 | Headway Technologies, Inc. | FCC-like trilayer AP2 structure for CPP GMR EM improvement |
JP2007096105A (ja) | 2005-09-29 | 2007-04-12 | Toshiba Corp | 磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記憶装置、および磁気メモリ |
US7639456B2 (en) * | 2005-10-06 | 2009-12-29 | Hitachi Global Storage Technologies Netherlands B.V. | Double mill process for patterning current perpendicular to plane (CPP) magnetoresistive devices to minimize barrier shorting and barrier damage |
JP4786331B2 (ja) | 2005-12-21 | 2011-10-05 | 株式会社東芝 | 磁気抵抗効果素子の製造方法 |
JP4514721B2 (ja) | 2006-02-09 | 2010-07-28 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置及び磁気記憶装置 |
DE602007010852D1 (de) * | 2006-03-03 | 2011-01-13 | Ricoh Co Ltd | Element mit magnetoresistivem Effekt und Herstellungsverfahren dafür |
JP2007299880A (ja) | 2006-04-28 | 2007-11-15 | Toshiba Corp | 磁気抵抗効果素子,および磁気抵抗効果素子の製造方法 |
JP4550777B2 (ja) | 2006-07-07 | 2010-09-22 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置及び磁気メモリ |
JP2008052885A (ja) * | 2006-07-28 | 2008-03-06 | Fujitsu Ltd | 磁気センサ及び磁気ディスク装置 |
US20080112095A1 (en) * | 2006-11-15 | 2008-05-15 | Hitachi Global Storage Technologies Netherlands B.V. | Dual current-perpendicular-to-the-plane (cpp) magnetoresistive sensor with heusler alloy free layer and minimal current-induced noise |
JP2008192222A (ja) * | 2007-02-02 | 2008-08-21 | Hitachi Global Storage Technologies Netherlands Bv | 磁気検出素子及びその製造方法 |
JP2008192832A (ja) * | 2007-02-05 | 2008-08-21 | Hitachi Global Storage Technologies Netherlands Bv | 磁気検出素子及びその製造方法 |
JP4388093B2 (ja) | 2007-03-27 | 2009-12-24 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置 |
US8031441B2 (en) * | 2007-05-11 | 2011-10-04 | Headway Technologies, Inc. | CPP device with an enhanced dR/R ratio |
US8325449B2 (en) | 2007-08-27 | 2012-12-04 | Headway Technologies, Inc. | CPP device with improved current confining structure and process |
US7881018B2 (en) * | 2007-09-05 | 2011-02-01 | Hitachi Global Storage Technologies Netherlands B.V. | Differential current perpendicular to plane giant magnetoresistive sensor structure having improved robustness against spin torque noise |
US20090168235A1 (en) * | 2007-12-27 | 2009-07-02 | Kochan Ju | Enhanced cpp read sensors with lateral spin transport |
US8289663B2 (en) * | 2008-04-25 | 2012-10-16 | Headway Technologies, Inc. | Ultra low RA (resistance x area) sensors having a multilayer non-magnetic spacer between pinned and free layers |
JP5039006B2 (ja) | 2008-09-26 | 2012-10-03 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
JP5039007B2 (ja) | 2008-09-26 | 2012-10-03 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
JP2010080839A (ja) | 2008-09-29 | 2010-04-08 | Toshiba Corp | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリおよび磁気記録再生装置 |
US8659853B2 (en) * | 2009-09-07 | 2014-02-25 | Agency For Science, Technology And Research | Sensor arrangement |
US8692343B2 (en) | 2010-04-26 | 2014-04-08 | Headway Technologies, Inc. | MR enhancing layer (MREL) for spintronic devices |
US8557610B2 (en) | 2011-02-14 | 2013-10-15 | Qualcomm Incorporated | Methods of integrated shielding into MTJ device for MRAM |
US9230578B2 (en) * | 2013-12-23 | 2016-01-05 | HGST Netherlands B.V. | Multiple readers for high resolution and SNR for high areal density application |
US9263068B1 (en) * | 2014-11-05 | 2016-02-16 | International Business Machines Corporation | Magnetic read head having a CPP MR sensor electrically isolated from a top shield |
US9280991B1 (en) | 2015-01-07 | 2016-03-08 | International Business Machines Corporation | TMR head design with insulative layers for shorting mitigation |
US9607635B1 (en) | 2016-04-22 | 2017-03-28 | International Business Machines Corporation | Current perpendicular-to-plane sensors having hard spacers |
US9947348B1 (en) | 2017-02-28 | 2018-04-17 | International Business Machines Corporation | Tunnel magnetoresistive sensor having leads supporting three-dimensional current flow |
US9997180B1 (en) | 2017-03-22 | 2018-06-12 | International Business Machines Corporation | Hybrid dielectric gap liner and magnetic shield liner |
US10803889B2 (en) | 2019-02-21 | 2020-10-13 | International Business Machines Corporation | Apparatus with data reader sensors more recessed than servo reader sensor |
US11074930B1 (en) | 2020-05-11 | 2021-07-27 | International Business Machines Corporation | Read transducer structure having an embedded wear layer between thin and thick shield portions |
US11114117B1 (en) | 2020-05-20 | 2021-09-07 | International Business Machines Corporation | Process for manufacturing magnetic head having a servo read transducer structure with dielectric gap liner and a data read transducer structure with an embedded wear layer between thin and thick shield portions |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5390061A (en) * | 1990-06-08 | 1995-02-14 | Hitachi, Ltd. | Multilayer magnetoresistance effect-type magnetic head |
US5206590A (en) * | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
US5159513A (en) * | 1991-02-08 | 1992-10-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
US5287238A (en) * | 1992-11-06 | 1994-02-15 | International Business Machines Corporation | Dual spin valve magnetoresistive sensor |
US5301079A (en) * | 1992-11-17 | 1994-04-05 | International Business Machines Corporation | Current biased magnetoresistive spin valve sensor |
US5576915A (en) * | 1993-03-15 | 1996-11-19 | Kabushiki Kaisha Toshiba | Magnetoresistive head with antiferromagnetic sublayers interposed between first and second spin-valve units to exchange bias inner magnetic films thereof |
-
1996
- 1996-05-24 US US08/653,322 patent/US5668688A/en not_active Expired - Fee Related
-
1997
- 1997-05-20 CN CN97190777A patent/CN1196814A/zh active Pending
- 1997-05-20 AU AU30736/97A patent/AU3073697A/en not_active Abandoned
- 1997-05-20 JP JP9542685A patent/JPH11509956A/ja active Pending
- 1997-05-20 WO PCT/US1997/008601 patent/WO1997044781A1/en not_active Application Discontinuation
- 1997-05-20 KR KR1019980700574A patent/KR19990035913A/ko not_active Application Discontinuation
- 1997-05-20 CA CA002227798A patent/CA2227798A1/en not_active Abandoned
- 1997-05-20 EP EP97925665A patent/EP0840925A1/en not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1591675B (zh) * | 1999-12-17 | 2011-11-09 | 艾沃思宾技术公司 | 具有双磁态的磁性元件 |
US6801413B2 (en) | 2001-08-10 | 2004-10-05 | Fujitsu Limited | Magnetic sensor, magnetic head and magnetic recording apparatus |
CN1975863B (zh) * | 2002-10-09 | 2010-05-26 | 富士通株式会社 | 垂直平面电流结构的磁阻元件和磁头滑块 |
CN100456511C (zh) * | 2003-03-27 | 2009-01-28 | 富士通株式会社 | Cpp结构的磁阻效应设备和磁头滑块 |
Also Published As
Publication number | Publication date |
---|---|
KR19990035913A (ko) | 1999-05-25 |
JPH11509956A (ja) | 1999-08-31 |
WO1997044781A1 (en) | 1997-11-27 |
AU3073697A (en) | 1997-12-09 |
EP0840925A1 (en) | 1998-05-13 |
CA2227798A1 (en) | 1997-11-27 |
US5668688A (en) | 1997-09-16 |
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