CN1188738C - 制作至少一个薄膜晶体管的方法 - Google Patents

制作至少一个薄膜晶体管的方法 Download PDF

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Publication number
CN1188738C
CN1188738C CNB971261164A CN97126116A CN1188738C CN 1188738 C CN1188738 C CN 1188738C CN B971261164 A CNB971261164 A CN B971261164A CN 97126116 A CN97126116 A CN 97126116A CN 1188738 C CN1188738 C CN 1188738C
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CN
China
Prior art keywords
film
tft
thin film
film transistor
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB971261164A
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English (en)
Chinese (zh)
Other versions
CN1188243A (zh
Inventor
立崎舜平
小山润
尾形靖
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN1188243A publication Critical patent/CN1188243A/zh
Application granted granted Critical
Publication of CN1188738C publication Critical patent/CN1188738C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CNB971261164A 1996-12-09 1997-12-09 制作至少一个薄膜晶体管的方法 Expired - Fee Related CN1188738C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP344574/96 1996-12-09
JP34457496 1996-12-09
JP344574/1996 1996-12-09
JP287715/97 1997-10-03
JP287715/1997 1997-10-03
JP9287715A JPH10228248A (ja) 1996-12-09 1997-10-03 アクティブマトリクス表示装置およびその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNB2004101022381A Division CN100347822C (zh) 1996-12-09 1997-12-09 制造显示器件的方法

Publications (2)

Publication Number Publication Date
CN1188243A CN1188243A (zh) 1998-07-22
CN1188738C true CN1188738C (zh) 2005-02-09

Family

ID=26556854

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB971261164A Expired - Fee Related CN1188738C (zh) 1996-12-09 1997-12-09 制作至少一个薄膜晶体管的方法
CNB2004101022381A Expired - Fee Related CN100347822C (zh) 1996-12-09 1997-12-09 制造显示器件的方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB2004101022381A Expired - Fee Related CN100347822C (zh) 1996-12-09 1997-12-09 制造显示器件的方法

Country Status (5)

Country Link
US (1) US6777272B2 (enExample)
JP (1) JPH10228248A (enExample)
KR (1) KR100516311B1 (enExample)
CN (2) CN1188738C (enExample)
TW (1) TW359856B (enExample)

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US6875628B1 (en) * 1993-05-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method of the same
JP3942683B2 (ja) * 1997-02-12 2007-07-11 株式会社半導体エネルギー研究所 半導体装置作製方法
JP2000163014A (ja) * 1998-11-27 2000-06-16 Sanyo Electric Co Ltd エレクトロルミネッセンス表示装置
EP1020920B1 (en) * 1999-01-11 2010-06-02 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a driver TFT and a pixel TFT on a common substrate
JP2004054168A (ja) * 2002-07-24 2004-02-19 Hitachi Ltd 画像表示装置
KR20040040158A (ko) * 2002-11-06 2004-05-12 비오이 하이디스 테크놀로지 주식회사 박막트랜지스터의 제조방법
JP4464078B2 (ja) * 2003-06-20 2010-05-19 株式会社 日立ディスプレイズ 画像表示装置
KR100611154B1 (ko) * 2003-11-27 2006-08-09 삼성에스디아이 주식회사 금속 유도 결정화 방법을 이용한 박막 트랜지스터, 이의제조 방법 및 이를 사용하는 액티브 매트릭스 평판 표시장치
US9734901B2 (en) 2004-10-29 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Display device with semiconductor memory cell
KR20080111693A (ko) 2007-06-19 2008-12-24 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR100882909B1 (ko) * 2007-06-27 2009-02-10 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조 방법, 이를 포함하는유기전계발광표시장치, 및 그의 제조 방법
US9171840B2 (en) * 2011-05-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102646595A (zh) 2011-11-11 2012-08-22 京东方科技集团股份有限公司 薄膜晶体管及其制造方法、显示器件
EP2613346B1 (en) * 2011-11-11 2022-06-08 BOE Technology Group Co., Ltd. Thin film transistor, manufacturing method thereof and display device
CN103489920B (zh) * 2013-09-26 2016-08-17 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、阵列基板和显示装置

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JPH0261032A (ja) 1988-08-24 1990-03-01 Sumitomo Metal Ind Ltd 疲労強度の優れた肌焼鋼
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CN1134600A (zh) * 1995-01-13 1996-10-30 株式会社半导体能源研究所 制造薄膜晶体管的方法及设备

Also Published As

Publication number Publication date
CN1624875A (zh) 2005-06-08
JPH10228248A (ja) 1998-08-25
US6777272B2 (en) 2004-08-17
KR100516311B1 (ko) 2005-12-16
US20030034940A1 (en) 2003-02-20
CN1188243A (zh) 1998-07-22
CN100347822C (zh) 2007-11-07
TW359856B (en) 1999-06-01
KR19980063913A (ko) 1998-10-07

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