CN1185365C - 陶瓷的制造方法及其制造设备以及半导体器件和压电元件 - Google Patents

陶瓷的制造方法及其制造设备以及半导体器件和压电元件 Download PDF

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Publication number
CN1185365C
CN1185365C CNB018006930A CN01800693A CN1185365C CN 1185365 C CN1185365 C CN 1185365C CN B018006930 A CNB018006930 A CN B018006930A CN 01800693 A CN01800693 A CN 01800693A CN 1185365 C CN1185365 C CN 1185365C
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CN
China
Prior art keywords
mentioned
active material
pottery
manufacture method
raw material
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Expired - Fee Related
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CNB018006930A
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English (en)
Chinese (zh)
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CN1365399A (zh
Inventor
名取荣治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
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Seiko Epson Corp
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Publication date
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Publication of CN1365399A publication Critical patent/CN1365399A/zh
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Publication of CN1185365C publication Critical patent/CN1185365C/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
CNB018006930A 2000-03-29 2001-03-29 陶瓷的制造方法及其制造设备以及半导体器件和压电元件 Expired - Fee Related CN1185365C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP91604/00 2000-03-29
JP2000091604A JP3596416B2 (ja) 2000-03-29 2000-03-29 セラミックスの製造方法およびその製造装置
JP91604/2000 2000-03-29

Publications (2)

Publication Number Publication Date
CN1365399A CN1365399A (zh) 2002-08-21
CN1185365C true CN1185365C (zh) 2005-01-19

Family

ID=18607051

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB018006930A Expired - Fee Related CN1185365C (zh) 2000-03-29 2001-03-29 陶瓷的制造方法及其制造设备以及半导体器件和压电元件

Country Status (7)

Country Link
US (1) US7018676B2 (enExample)
EP (1) EP1205576B1 (enExample)
JP (1) JP3596416B2 (enExample)
KR (1) KR100476495B1 (enExample)
CN (1) CN1185365C (enExample)
DE (1) DE60130858T2 (enExample)
WO (1) WO2001083846A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1022269C2 (nl) * 2002-12-24 2004-06-25 Otb Group Bv Werkwijze voor het vervaardigen van een organic electroluminescent display device, substraat ten gebruike bij een dergelijke werkwijze, alsmede een organic electroluminescent display device verkregen met de werkwijze.
JP4743393B2 (ja) * 2005-06-27 2011-08-10 セイコーエプソン株式会社 液体噴射ヘッド及び液体噴射装置
WO2008121793A1 (en) * 2007-03-30 2008-10-09 The Penn State Research Foundation Mist fabrication of quantum dot devices
JP5527527B2 (ja) * 2010-03-12 2014-06-18 セイコーエプソン株式会社 液体噴射ヘッド及び液体噴射装置
US20150361585A1 (en) * 2013-06-04 2015-12-17 Nippon Steel & Sumitomo Metal Corporation Method for manufacturing sic single-crystal substrate for epitaxial sic wafer, and sic single-crystal substrate for epitaxial sic wafer
JP5729507B2 (ja) * 2014-04-08 2015-06-03 セイコーエプソン株式会社 圧電素子及び超音波デバイス

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GB2112571B (en) * 1981-07-27 1985-06-12 Sony Corp Method of manufacturing a pyroelectric unit
US5456945A (en) * 1988-12-27 1995-10-10 Symetrix Corporation Method and apparatus for material deposition
JPH02179880A (ja) * 1988-12-29 1990-07-12 Toyo Sanso Kk 酸化物セラミック系超電導薄膜の製造方法
JPH02200782A (ja) 1989-01-31 1990-08-09 Matsushita Electric Ind Co Ltd チタン酸鉛薄膜の形成方法
JP2914992B2 (ja) * 1989-03-31 1999-07-05 キヤノン株式会社 堆積膜形成方法
JPH0353068A (ja) 1989-07-20 1991-03-07 Matsushita Electric Ind Co Ltd レーザｃｖｄによる膜の描画方法
US5066512A (en) 1989-12-08 1991-11-19 International Business Machines Corporation Electrostatic deposition of lcd color filters
JPH0435033A (ja) * 1990-05-31 1992-02-05 Matsushita Electric Ind Co Ltd 薄膜強誘電体の製造方法
US6110531A (en) * 1991-02-25 2000-08-29 Symetrix Corporation Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
JP2860505B2 (ja) 1991-02-25 1999-02-24 シメトリックス コーポレーション 材料蒸着装置
US5962085A (en) 1991-02-25 1999-10-05 Symetrix Corporation Misted precursor deposition apparatus and method with improved mist and mist flow
JPH0578103A (ja) 1991-04-30 1993-03-30 Ricoh Co Ltd 厚膜無機酸化物
AU3582793A (en) 1992-02-21 1993-09-13 Radiant Technologies, Inc. Method for depositing a thin film on a semiconductor circuit
JP3445632B2 (ja) 1993-02-26 2003-09-08 科学技術振興事業団 薄膜の製造方法とその装置
US5563762A (en) * 1994-11-28 1996-10-08 Northern Telecom Limited Capacitor for an integrated circuit and method of formation thereof, and a method of adding on-chip capacitors to an integrated circuit
FR2729400B1 (fr) * 1995-01-18 1997-04-04 Univ Paris Curie Procede et dispositif pour deposer une couche mince d'oxyde metallique, materiau ainsi obtenu, et element de pile a combustible incluant ce materiau
US5540959A (en) 1995-02-21 1996-07-30 Howard J. Greenwald Process for preparing a coated substrate
JP3133922B2 (ja) * 1995-06-09 2001-02-13 シャープ株式会社 強誘電体薄膜被覆基板、その製造方法、及びキャパシタ構造素子
JPH0964307A (ja) 1995-08-29 1997-03-07 Hitachi Ltd 酸化物薄膜の熱処理方法
JP3188179B2 (ja) 1995-09-26 2001-07-16 シャープ株式会社 強誘電体薄膜素子の製造方法及び強誘電体メモリ素子の製造方法
JP2907111B2 (ja) * 1996-04-22 1999-06-21 日本電気株式会社 気相成長方法及びその装置
US5997642A (en) * 1996-05-21 1999-12-07 Symetrix Corporation Method and apparatus for misted deposition of integrated circuit quality thin films
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US6349668B1 (en) * 1998-04-27 2002-02-26 Msp Corporation Method and apparatus for thin film deposition on large area substrates

Also Published As

Publication number Publication date
JP2001279444A (ja) 2001-10-10
US20020055201A1 (en) 2002-05-09
JP3596416B2 (ja) 2004-12-02
WO2001083846A1 (fr) 2001-11-08
EP1205576A4 (en) 2003-08-20
KR20020040668A (ko) 2002-05-30
DE60130858T2 (de) 2008-07-17
CN1365399A (zh) 2002-08-21
KR100476495B1 (ko) 2005-03-17
DE60130858D1 (de) 2007-11-22
EP1205576A1 (en) 2002-05-15
EP1205576B1 (en) 2007-10-10
US7018676B2 (en) 2006-03-28

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Granted publication date: 20050119

Termination date: 20180329