KR100476495B1 - 세라믹의 제조 방법 및 그 제조 장치와, 반도체 장치 및 압전 소자 - Google Patents

세라믹의 제조 방법 및 그 제조 장치와, 반도체 장치 및 압전 소자 Download PDF

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KR100476495B1
KR100476495B1 KR10-2001-7015258A KR20017015258A KR100476495B1 KR 100476495 B1 KR100476495 B1 KR 100476495B1 KR 20017015258 A KR20017015258 A KR 20017015258A KR 100476495 B1 KR100476495 B1 KR 100476495B1
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South Korea
Prior art keywords
ceramic
raw material
active species
species
producing
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KR10-2001-7015258A
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English (en)
Korean (ko)
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KR20020040668A (ko
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나토리에이지
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세이코 엡슨 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
KR10-2001-7015258A 2000-03-29 2001-03-29 세라믹의 제조 방법 및 그 제조 장치와, 반도체 장치 및 압전 소자 Expired - Fee Related KR100476495B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000091604A JP3596416B2 (ja) 2000-03-29 2000-03-29 セラミックスの製造方法およびその製造装置
JPJP-P-2000-00091604 2000-03-29

Publications (2)

Publication Number Publication Date
KR20020040668A KR20020040668A (ko) 2002-05-30
KR100476495B1 true KR100476495B1 (ko) 2005-03-17

Family

ID=18607051

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-7015258A Expired - Fee Related KR100476495B1 (ko) 2000-03-29 2001-03-29 세라믹의 제조 방법 및 그 제조 장치와, 반도체 장치 및 압전 소자

Country Status (7)

Country Link
US (1) US7018676B2 (enExample)
EP (1) EP1205576B1 (enExample)
JP (1) JP3596416B2 (enExample)
KR (1) KR100476495B1 (enExample)
CN (1) CN1185365C (enExample)
DE (1) DE60130858T2 (enExample)
WO (1) WO2001083846A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1022269C2 (nl) * 2002-12-24 2004-06-25 Otb Group Bv Werkwijze voor het vervaardigen van een organic electroluminescent display device, substraat ten gebruike bij een dergelijke werkwijze, alsmede een organic electroluminescent display device verkregen met de werkwijze.
JP4743393B2 (ja) * 2005-06-27 2011-08-10 セイコーエプソン株式会社 液体噴射ヘッド及び液体噴射装置
US8222061B2 (en) * 2007-03-30 2012-07-17 The Penn State Research Foundation Mist fabrication of quantum dot devices
JP5527527B2 (ja) * 2010-03-12 2014-06-18 セイコーエプソン株式会社 液体噴射ヘッド及び液体噴射装置
CN104981892A (zh) * 2013-06-04 2015-10-14 新日铁住金株式会社 外延碳化硅晶片用碳化硅单晶基板的制造方法以及外延碳化硅晶片用碳化硅单晶基板
JP5729507B2 (ja) * 2014-04-08 2015-06-03 セイコーエプソン株式会社 圧電素子及び超音波デバイス

Citations (2)

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Publication number Priority date Publication date Assignee Title
JPH02200782A (ja) * 1989-01-31 1990-08-09 Matsushita Electric Ind Co Ltd チタン酸鉛薄膜の形成方法
KR100202532B1 (ko) * 1991-02-25 1999-06-15 시메트릭스 코포레이션 전자 디바이스 내의 전자 부품 및 제조방법 및 그 장치

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US5456945A (en) * 1988-12-27 1995-10-10 Symetrix Corporation Method and apparatus for material deposition
JPH02179880A (ja) * 1988-12-29 1990-07-12 Toyo Sanso Kk 酸化物セラミック系超電導薄膜の製造方法
JP2914992B2 (ja) 1989-03-31 1999-07-05 キヤノン株式会社 堆積膜形成方法
JPH0353068A (ja) 1989-07-20 1991-03-07 Matsushita Electric Ind Co Ltd レーザｃｖｄによる膜の描画方法
US5066512A (en) * 1989-12-08 1991-11-19 International Business Machines Corporation Electrostatic deposition of lcd color filters
JPH0435033A (ja) * 1990-05-31 1992-02-05 Matsushita Electric Ind Co Ltd 薄膜強誘電体の製造方法
US5962085A (en) 1991-02-25 1999-10-05 Symetrix Corporation Misted precursor deposition apparatus and method with improved mist and mist flow
US6110531A (en) * 1991-02-25 2000-08-29 Symetrix Corporation Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
JPH0578103A (ja) 1991-04-30 1993-03-30 Ricoh Co Ltd 厚膜無機酸化物
AU3582793A (en) 1992-02-21 1993-09-13 Radiant Technologies, Inc. Method for depositing a thin film on a semiconductor circuit
JP3445632B2 (ja) 1993-02-26 2003-09-08 科学技術振興事業団 薄膜の製造方法とその装置
US5563762A (en) * 1994-11-28 1996-10-08 Northern Telecom Limited Capacitor for an integrated circuit and method of formation thereof, and a method of adding on-chip capacitors to an integrated circuit
FR2729400B1 (fr) 1995-01-18 1997-04-04 Univ Paris Curie Procede et dispositif pour deposer une couche mince d'oxyde metallique, materiau ainsi obtenu, et element de pile a combustible incluant ce materiau
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JP3133922B2 (ja) * 1995-06-09 2001-02-13 シャープ株式会社 強誘電体薄膜被覆基板、その製造方法、及びキャパシタ構造素子
JPH0964307A (ja) 1995-08-29 1997-03-07 Hitachi Ltd 酸化物薄膜の熱処理方法
JP3188179B2 (ja) 1995-09-26 2001-07-16 シャープ株式会社 強誘電体薄膜素子の製造方法及び強誘電体メモリ素子の製造方法
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KR20000015989A (ko) * 1996-06-19 2000-03-25 이노우에 노리유끼 피복용 조성물, 피막 및 피막의 제조 방법
EP0828012B1 (en) 1996-09-09 2001-12-19 Ebara Corporation Method for vaporizing liquid feed and vaporizer therefor
JP3392299B2 (ja) 1996-09-18 2003-03-31 株式会社フジクラ Ｃｖｄ用原料溶液気化装置
US6146905A (en) * 1996-12-12 2000-11-14 Nortell Networks Limited Ferroelectric dielectric for integrated circuit applications at microwave frequencies
US5932904A (en) * 1997-03-07 1999-08-03 Sharp Laboratories Of America, Inc. Two transistor ferroelectric memory cell
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Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JPH02200782A (ja) * 1989-01-31 1990-08-09 Matsushita Electric Ind Co Ltd チタン酸鉛薄膜の形成方法
KR100202532B1 (ko) * 1991-02-25 1999-06-15 시메트릭스 코포레이션 전자 디바이스 내의 전자 부품 및 제조방법 및 그 장치

Also Published As

Publication number Publication date
EP1205576B1 (en) 2007-10-10
US7018676B2 (en) 2006-03-28
JP3596416B2 (ja) 2004-12-02
EP1205576A4 (en) 2003-08-20
JP2001279444A (ja) 2001-10-10
DE60130858T2 (de) 2008-07-17
CN1185365C (zh) 2005-01-19
CN1365399A (zh) 2002-08-21
WO2001083846A1 (fr) 2001-11-08
US20020055201A1 (en) 2002-05-09
DE60130858D1 (de) 2007-11-22
KR20020040668A (ko) 2002-05-30
EP1205576A1 (en) 2002-05-15

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