AU3582793A - Method for depositing a thin film on a semiconductor circuit - Google Patents
Method for depositing a thin film on a semiconductor circuitInfo
- Publication number
- AU3582793A AU3582793A AU35827/93A AU3582793A AU3582793A AU 3582793 A AU3582793 A AU 3582793A AU 35827/93 A AU35827/93 A AU 35827/93A AU 3582793 A AU3582793 A AU 3582793A AU 3582793 A AU3582793 A AU 3582793A
- Authority
- AU
- Australia
- Prior art keywords
- depositing
- thin film
- semiconductor circuit
- semiconductor
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US83916792A | 1992-02-21 | 1992-02-21 | |
| US839167 | 1992-02-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU3582793A true AU3582793A (en) | 1993-09-13 |
Family
ID=25279027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU35827/93A Abandoned AU3582793A (en) | 1992-02-21 | 1993-01-13 | Method for depositing a thin film on a semiconductor circuit |
Country Status (2)
| Country | Link |
|---|---|
| AU (1) | AU3582793A (en) |
| WO (1) | WO1993016811A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5670218A (en) * | 1995-10-04 | 1997-09-23 | Hyundai Electronics Industries Co., Ltd. | Method for forming ferroelectric thin film and apparatus therefor |
| JP3596416B2 (en) | 2000-03-29 | 2004-12-02 | セイコーエプソン株式会社 | Method for manufacturing ceramics and apparatus for manufacturing the same |
| JP5025484B2 (en) * | 2004-10-26 | 2012-09-12 | アーエスエム インターナショナル エヌ ヴィ | Method for depositing lead-containing oxide film |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4946710A (en) * | 1987-06-02 | 1990-08-07 | National Semiconductor Corporation | Method for preparing PLZT, PZT and PLT sol-gels and fabricating ferroelectric thin films |
| US4963390A (en) * | 1988-10-05 | 1990-10-16 | The Aerospace Corporation | Metallo-organic solution deposition (MOSD) of transparent, crystalline ferroelectric films |
| US5138520A (en) * | 1988-12-27 | 1992-08-11 | Symetrix Corporation | Methods and apparatus for material deposition |
| US5104690A (en) * | 1990-06-06 | 1992-04-14 | Spire Corporation | CVD thin film compounds |
-
1993
- 1993-01-13 AU AU35827/93A patent/AU3582793A/en not_active Abandoned
- 1993-01-13 WO PCT/US1993/000259 patent/WO1993016811A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO1993016811A1 (en) | 1993-09-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU4767797A (en) | Forming a crystalline semiconductor film on a glass substrate | |
| AU1274297A (en) | Aligner for a substrate carrier | |
| EP0476652A3 (en) | Method for depositing thin film on substrate by sputtering process | |
| AU2295392A (en) | Method of manufacturing a thin film semiconductor device | |
| AU645283B2 (en) | Substrate for packaging a semiconductor device | |
| AU637874B2 (en) | Substrate for packaging a semiconductor device | |
| GB2264119B (en) | A method for manufacturing an oxide-system dielectric thin film using CVD method | |
| AU5598194A (en) | Microwave apparatus for depositing thin films | |
| AU4981799A (en) | Method for forming a copper film on a substrate | |
| AU7246594A (en) | Control of the properties of a film deposited on a semiconductor wafer | |
| EP1119032B8 (en) | A method for producing a semiconductor device | |
| AU3058789A (en) | Method for obtaining transverse uniformity during thin film deposition on extended substrate | |
| EP0640460A3 (en) | Method for producing a thin film. | |
| EP0476676A3 (en) | Thin film deposition method | |
| GB9105709D0 (en) | Method for etching a diamond thin films | |
| TW402166U (en) | Device for deposition of thin layers on a substrate | |
| AU564776B2 (en) | Depositing thin transmissive film on semiconductor | |
| EP0589713A3 (en) | A thin film semiconductor device and a method for producing the same | |
| AU5242593A (en) | Method for forming a vermiculite film | |
| EP0444253A3 (en) | Apparatus for the deposition of thin layers on a substrate | |
| GB2193976B (en) | Process for depositing a polysilicon film on a substrate | |
| EP0477990A3 (en) | A method of enhancing the properties of a thin film on a substrate | |
| GB2295271B (en) | Method for fabricating a compound semiconductor thin film on dielectric thin film | |
| AU1497295A (en) | Method of depositing solid substance on a substrate | |
| EP0646950A3 (en) | Method for processing a thin film. |