JP3596416B2 - セラミックスの製造方法およびその製造装置 - Google Patents

セラミックスの製造方法およびその製造装置 Download PDF

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Publication number
JP3596416B2
JP3596416B2 JP2000091604A JP2000091604A JP3596416B2 JP 3596416 B2 JP3596416 B2 JP 3596416B2 JP 2000091604 A JP2000091604 A JP 2000091604A JP 2000091604 A JP2000091604 A JP 2000091604A JP 3596416 B2 JP3596416 B2 JP 3596416B2
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JP
Japan
Prior art keywords
raw material
ceramic
ceramics
active species
producing
Prior art date
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Expired - Fee Related
Application number
JP2000091604A
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English (en)
Japanese (ja)
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JP2001279444A5 (enExample
JP2001279444A (ja
Inventor
栄治 名取
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2000091604A priority Critical patent/JP3596416B2/ja
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to PCT/JP2001/002632 priority patent/WO2001083846A1/ja
Priority to DE2001630858 priority patent/DE60130858T2/de
Priority to KR10-2001-7015258A priority patent/KR100476495B1/ko
Priority to US09/819,688 priority patent/US7018676B2/en
Priority to CNB018006930A priority patent/CN1185365C/zh
Priority to EP01917597A priority patent/EP1205576B1/en
Publication of JP2001279444A publication Critical patent/JP2001279444A/ja
Application granted granted Critical
Publication of JP3596416B2 publication Critical patent/JP3596416B2/ja
Publication of JP2001279444A5 publication Critical patent/JP2001279444A5/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
JP2000091604A 2000-03-29 2000-03-29 セラミックスの製造方法およびその製造装置 Expired - Fee Related JP3596416B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2000091604A JP3596416B2 (ja) 2000-03-29 2000-03-29 セラミックスの製造方法およびその製造装置
DE2001630858 DE60130858T2 (de) 2000-03-29 2001-03-29 Verfahren zur herstellung von keramik
KR10-2001-7015258A KR100476495B1 (ko) 2000-03-29 2001-03-29 세라믹의 제조 방법 및 그 제조 장치와, 반도체 장치 및 압전 소자
US09/819,688 US7018676B2 (en) 2000-03-29 2001-03-29 Method and device for manufacturing ceramics, semiconductor device and piezoelectric device
PCT/JP2001/002632 WO2001083846A1 (fr) 2000-03-29 2001-03-29 Procede de production de ceramique et appareil pour sa production, dispositif a semi-conducteur et dispositif piezo-electrique
CNB018006930A CN1185365C (zh) 2000-03-29 2001-03-29 陶瓷的制造方法及其制造设备以及半导体器件和压电元件
EP01917597A EP1205576B1 (en) 2000-03-29 2001-03-29 Method for producing ceramic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000091604A JP3596416B2 (ja) 2000-03-29 2000-03-29 セラミックスの製造方法およびその製造装置

Publications (3)

Publication Number Publication Date
JP2001279444A JP2001279444A (ja) 2001-10-10
JP3596416B2 true JP3596416B2 (ja) 2004-12-02
JP2001279444A5 JP2001279444A5 (enExample) 2005-02-24

Family

ID=18607051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000091604A Expired - Fee Related JP3596416B2 (ja) 2000-03-29 2000-03-29 セラミックスの製造方法およびその製造装置

Country Status (7)

Country Link
US (1) US7018676B2 (enExample)
EP (1) EP1205576B1 (enExample)
JP (1) JP3596416B2 (enExample)
KR (1) KR100476495B1 (enExample)
CN (1) CN1185365C (enExample)
DE (1) DE60130858T2 (enExample)
WO (1) WO2001083846A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1022269C2 (nl) * 2002-12-24 2004-06-25 Otb Group Bv Werkwijze voor het vervaardigen van een organic electroluminescent display device, substraat ten gebruike bij een dergelijke werkwijze, alsmede een organic electroluminescent display device verkregen met de werkwijze.
JP4743393B2 (ja) * 2005-06-27 2011-08-10 セイコーエプソン株式会社 液体噴射ヘッド及び液体噴射装置
US8222061B2 (en) * 2007-03-30 2012-07-17 The Penn State Research Foundation Mist fabrication of quantum dot devices
JP5527527B2 (ja) * 2010-03-12 2014-06-18 セイコーエプソン株式会社 液体噴射ヘッド及び液体噴射装置
CN104981892A (zh) * 2013-06-04 2015-10-14 新日铁住金株式会社 外延碳化硅晶片用碳化硅单晶基板的制造方法以及外延碳化硅晶片用碳化硅单晶基板
JP5729507B2 (ja) * 2014-04-08 2015-06-03 セイコーエプソン株式会社 圧電素子及び超音波デバイス

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GB2112571B (en) * 1981-07-27 1985-06-12 Sony Corp Method of manufacturing a pyroelectric unit
US5456945A (en) * 1988-12-27 1995-10-10 Symetrix Corporation Method and apparatus for material deposition
JPH02179880A (ja) * 1988-12-29 1990-07-12 Toyo Sanso Kk 酸化物セラミック系超電導薄膜の製造方法
JPH02200782A (ja) * 1989-01-31 1990-08-09 Matsushita Electric Ind Co Ltd チタン酸鉛薄膜の形成方法
JP2914992B2 (ja) 1989-03-31 1999-07-05 キヤノン株式会社 堆積膜形成方法
JPH0353068A (ja) 1989-07-20 1991-03-07 Matsushita Electric Ind Co Ltd レーザｃｖｄによる膜の描画方法
US5066512A (en) * 1989-12-08 1991-11-19 International Business Machines Corporation Electrostatic deposition of lcd color filters
JPH0435033A (ja) * 1990-05-31 1992-02-05 Matsushita Electric Ind Co Ltd 薄膜強誘電体の製造方法
US5962085A (en) 1991-02-25 1999-10-05 Symetrix Corporation Misted precursor deposition apparatus and method with improved mist and mist flow
US6110531A (en) * 1991-02-25 2000-08-29 Symetrix Corporation Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
JP2860505B2 (ja) 1991-02-25 1999-02-24 シメトリックス コーポレーション 材料蒸着装置
JPH0578103A (ja) 1991-04-30 1993-03-30 Ricoh Co Ltd 厚膜無機酸化物
AU3582793A (en) 1992-02-21 1993-09-13 Radiant Technologies, Inc. Method for depositing a thin film on a semiconductor circuit
JP3445632B2 (ja) 1993-02-26 2003-09-08 科学技術振興事業団 薄膜の製造方法とその装置
US5563762A (en) * 1994-11-28 1996-10-08 Northern Telecom Limited Capacitor for an integrated circuit and method of formation thereof, and a method of adding on-chip capacitors to an integrated circuit
FR2729400B1 (fr) 1995-01-18 1997-04-04 Univ Paris Curie Procede et dispositif pour deposer une couche mince d'oxyde metallique, materiau ainsi obtenu, et element de pile a combustible incluant ce materiau
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JP3133922B2 (ja) * 1995-06-09 2001-02-13 シャープ株式会社 強誘電体薄膜被覆基板、その製造方法、及びキャパシタ構造素子
JPH0964307A (ja) 1995-08-29 1997-03-07 Hitachi Ltd 酸化物薄膜の熱処理方法
JP3188179B2 (ja) 1995-09-26 2001-07-16 シャープ株式会社 強誘電体薄膜素子の製造方法及び強誘電体メモリ素子の製造方法
JP2907111B2 (ja) * 1996-04-22 1999-06-21 日本電気株式会社 気相成長方法及びその装置
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Also Published As

Publication number Publication date
EP1205576B1 (en) 2007-10-10
US7018676B2 (en) 2006-03-28
EP1205576A4 (en) 2003-08-20
JP2001279444A (ja) 2001-10-10
DE60130858T2 (de) 2008-07-17
CN1185365C (zh) 2005-01-19
CN1365399A (zh) 2002-08-21
WO2001083846A1 (fr) 2001-11-08
US20020055201A1 (en) 2002-05-09
DE60130858D1 (de) 2007-11-22
KR20020040668A (ko) 2002-05-30
KR100476495B1 (ko) 2005-03-17
EP1205576A1 (en) 2002-05-15

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