DE60130858T2 - Verfahren zur herstellung von keramik - Google Patents
Verfahren zur herstellung von keramik Download PDFInfo
- Publication number
- DE60130858T2 DE60130858T2 DE2001630858 DE60130858T DE60130858T2 DE 60130858 T2 DE60130858 T2 DE 60130858T2 DE 2001630858 DE2001630858 DE 2001630858 DE 60130858 T DE60130858 T DE 60130858T DE 60130858 T2 DE60130858 T2 DE 60130858T2
- Authority
- DE
- Germany
- Prior art keywords
- film
- active species
- materials
- ceramic
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 66
- 239000000919 ceramic Substances 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title description 25
- 239000000463 material Substances 0.000 claims description 37
- 239000007858 starting material Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 28
- 229910010293 ceramic material Inorganic materials 0.000 claims description 26
- 150000002500 ions Chemical class 0.000 claims description 21
- 238000002156 mixing Methods 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 238000005234 chemical deposition Methods 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 23
- 239000010419 fine particle Substances 0.000 description 20
- 239000003990 capacitor Substances 0.000 description 19
- 238000002425 crystallisation Methods 0.000 description 11
- 230000008025 crystallization Effects 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 239000003595 mist Substances 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 239000010410 layer Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000006735 deficit Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000091604A JP3596416B2 (ja) | 2000-03-29 | 2000-03-29 | セラミックスの製造方法およびその製造装置 |
| JP2000091604 | 2000-03-29 | ||
| PCT/JP2001/002632 WO2001083846A1 (fr) | 2000-03-29 | 2001-03-29 | Procede de production de ceramique et appareil pour sa production, dispositif a semi-conducteur et dispositif piezo-electrique |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60130858D1 DE60130858D1 (de) | 2007-11-22 |
| DE60130858T2 true DE60130858T2 (de) | 2008-07-17 |
Family
ID=18607051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2001630858 Expired - Lifetime DE60130858T2 (de) | 2000-03-29 | 2001-03-29 | Verfahren zur herstellung von keramik |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7018676B2 (enExample) |
| EP (1) | EP1205576B1 (enExample) |
| JP (1) | JP3596416B2 (enExample) |
| KR (1) | KR100476495B1 (enExample) |
| CN (1) | CN1185365C (enExample) |
| DE (1) | DE60130858T2 (enExample) |
| WO (1) | WO2001083846A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1022269C2 (nl) * | 2002-12-24 | 2004-06-25 | Otb Group Bv | Werkwijze voor het vervaardigen van een organic electroluminescent display device, substraat ten gebruike bij een dergelijke werkwijze, alsmede een organic electroluminescent display device verkregen met de werkwijze. |
| JP4743393B2 (ja) * | 2005-06-27 | 2011-08-10 | セイコーエプソン株式会社 | 液体噴射ヘッド及び液体噴射装置 |
| WO2008121793A1 (en) * | 2007-03-30 | 2008-10-09 | The Penn State Research Foundation | Mist fabrication of quantum dot devices |
| JP5527527B2 (ja) * | 2010-03-12 | 2014-06-18 | セイコーエプソン株式会社 | 液体噴射ヘッド及び液体噴射装置 |
| US20150361585A1 (en) * | 2013-06-04 | 2015-12-17 | Nippon Steel & Sumitomo Metal Corporation | Method for manufacturing sic single-crystal substrate for epitaxial sic wafer, and sic single-crystal substrate for epitaxial sic wafer |
| JP5729507B2 (ja) * | 2014-04-08 | 2015-06-03 | セイコーエプソン株式会社 | 圧電素子及び超音波デバイス |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2112571B (en) * | 1981-07-27 | 1985-06-12 | Sony Corp | Method of manufacturing a pyroelectric unit |
| US5456945A (en) * | 1988-12-27 | 1995-10-10 | Symetrix Corporation | Method and apparatus for material deposition |
| JPH02179880A (ja) * | 1988-12-29 | 1990-07-12 | Toyo Sanso Kk | 酸化物セラミック系超電導薄膜の製造方法 |
| JPH02200782A (ja) | 1989-01-31 | 1990-08-09 | Matsushita Electric Ind Co Ltd | チタン酸鉛薄膜の形成方法 |
| JP2914992B2 (ja) * | 1989-03-31 | 1999-07-05 | キヤノン株式会社 | 堆積膜形成方法 |
| JPH0353068A (ja) | 1989-07-20 | 1991-03-07 | Matsushita Electric Ind Co Ltd | レーザｃｖｄによる膜の描画方法 |
| US5066512A (en) | 1989-12-08 | 1991-11-19 | International Business Machines Corporation | Electrostatic deposition of lcd color filters |
| JPH0435033A (ja) * | 1990-05-31 | 1992-02-05 | Matsushita Electric Ind Co Ltd | 薄膜強誘電体の製造方法 |
| US6110531A (en) * | 1991-02-25 | 2000-08-29 | Symetrix Corporation | Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition |
| JP2860505B2 (ja) | 1991-02-25 | 1999-02-24 | シメトリックス コーポレーション | 材料蒸着装置 |
| US5962085A (en) | 1991-02-25 | 1999-10-05 | Symetrix Corporation | Misted precursor deposition apparatus and method with improved mist and mist flow |
| JPH0578103A (ja) | 1991-04-30 | 1993-03-30 | Ricoh Co Ltd | 厚膜無機酸化物 |
| AU3582793A (en) | 1992-02-21 | 1993-09-13 | Radiant Technologies, Inc. | Method for depositing a thin film on a semiconductor circuit |
| JP3445632B2 (ja) | 1993-02-26 | 2003-09-08 | 科学技術振興事業団 | 薄膜の製造方法とその装置 |
| US5563762A (en) * | 1994-11-28 | 1996-10-08 | Northern Telecom Limited | Capacitor for an integrated circuit and method of formation thereof, and a method of adding on-chip capacitors to an integrated circuit |
| FR2729400B1 (fr) * | 1995-01-18 | 1997-04-04 | Univ Paris Curie | Procede et dispositif pour deposer une couche mince d'oxyde metallique, materiau ainsi obtenu, et element de pile a combustible incluant ce materiau |
| US5540959A (en) | 1995-02-21 | 1996-07-30 | Howard J. Greenwald | Process for preparing a coated substrate |
| JP3133922B2 (ja) * | 1995-06-09 | 2001-02-13 | シャープ株式会社 | 強誘電体薄膜被覆基板、その製造方法、及びキャパシタ構造素子 |
| JPH0964307A (ja) | 1995-08-29 | 1997-03-07 | Hitachi Ltd | 酸化物薄膜の熱処理方法 |
| JP3188179B2 (ja) | 1995-09-26 | 2001-07-16 | シャープ株式会社 | 強誘電体薄膜素子の製造方法及び強誘電体メモリ素子の製造方法 |
| JP2907111B2 (ja) * | 1996-04-22 | 1999-06-21 | 日本電気株式会社 | 気相成長方法及びその装置 |
| US5997642A (en) * | 1996-05-21 | 1999-12-07 | Symetrix Corporation | Method and apparatus for misted deposition of integrated circuit quality thin films |
| WO1997048774A1 (en) * | 1996-06-19 | 1997-12-24 | Daikin Industries, Ltd. | Coating composition, coating film, and process for the production of the film |
| EP0828012B1 (en) | 1996-09-09 | 2001-12-19 | Ebara Corporation | Method for vaporizing liquid feed and vaporizer therefor |
| JP3392299B2 (ja) | 1996-09-18 | 2003-03-31 | 株式会社フジクラ | Ｃｖｄ用原料溶液気化装置 |
| US6146905A (en) * | 1996-12-12 | 2000-11-14 | Nortell Networks Limited | Ferroelectric dielectric for integrated circuit applications at microwave frequencies |
| US5932904A (en) * | 1997-03-07 | 1999-08-03 | Sharp Laboratories Of America, Inc. | Two transistor ferroelectric memory cell |
| US6120846A (en) * | 1997-12-23 | 2000-09-19 | Advanced Technology Materials, Inc. | Method for the selective deposition of bismuth based ferroelectric thin films by chemical vapor deposition |
| US6349668B1 (en) * | 1998-04-27 | 2002-02-26 | Msp Corporation | Method and apparatus for thin film deposition on large area substrates |
-
2000
- 2000-03-29 JP JP2000091604A patent/JP3596416B2/ja not_active Expired - Fee Related
-
2001
- 2001-03-29 US US09/819,688 patent/US7018676B2/en not_active Expired - Lifetime
- 2001-03-29 CN CNB018006930A patent/CN1185365C/zh not_active Expired - Fee Related
- 2001-03-29 DE DE2001630858 patent/DE60130858T2/de not_active Expired - Lifetime
- 2001-03-29 WO PCT/JP2001/002632 patent/WO2001083846A1/ja not_active Ceased
- 2001-03-29 EP EP01917597A patent/EP1205576B1/en not_active Expired - Lifetime
- 2001-03-29 KR KR10-2001-7015258A patent/KR100476495B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001279444A (ja) | 2001-10-10 |
| US20020055201A1 (en) | 2002-05-09 |
| JP3596416B2 (ja) | 2004-12-02 |
| WO2001083846A1 (fr) | 2001-11-08 |
| EP1205576A4 (en) | 2003-08-20 |
| KR20020040668A (ko) | 2002-05-30 |
| CN1185365C (zh) | 2005-01-19 |
| CN1365399A (zh) | 2002-08-21 |
| KR100476495B1 (ko) | 2005-03-17 |
| DE60130858D1 (de) | 2007-11-22 |
| EP1205576A1 (en) | 2002-05-15 |
| EP1205576B1 (en) | 2007-10-10 |
| US7018676B2 (en) | 2006-03-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |